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14 Jun 2004

Volume 84, Issue 24, pp. 4839-5046

Issue Cover Spotlight Figure

Appl. Phys. Lett. 84, 4409 (2004); http://dx.doi.org/10.1063/1.1757648 (3 pages)

Azita Soleymani, Piroz Zamankhan, and William Polashenski
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Carbon nanotube filaments in household light bulbs

Jinquan Wei, Hongwei Zhu, Dehai Wu, and Bingqing Wei

Appl. Phys. Lett. 84, 4869 (2004); http://dx.doi.org/10.1063/1.1762697 (3 pages) | Cited 34 times

Online Publication Date: 25 May 2004

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Household light bulbs made from macroscopic single-walled and double-walled carbon nanotube filaments were fabricated and tested. The nanotube bulbs are found to possess several interesting features when compared to a conventional tungsten filament in safelight (36 V, 40 W), such as lower threshold voltage for light emission and higher brightness at high voltages. Electrically induced excited peaks at 407, 417, 655 nm were identified to be an intrinsic property of nanotubes and these peaks are observed to become stronger in the light emission spectra at high temperatures which cannot be explained easily with the concept of blackbody emission. © 2004 American Institute of Physics.
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85.35.Kt Nanotube devices
73.61.Wp Fullerenes and related materials
73.63.Fg Nanotubes
42.72.Bj Visible and ultraviolet sources

Controllable excimer-laser fabrication of conical nano-tips on silicon thin films

D. G. Georgiev, R. J. Baird, I. Avrutsky, G. Auner, and G. Newaz

Appl. Phys. Lett. 84, 4881 (2004); http://dx.doi.org/10.1063/1.1762978 (3 pages) | Cited 20 times

Online Publication Date: 25 May 2004

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We have found conditions for the reproducible, direct laser fabrication of sharp conical tips with heights of about 1 μm and apical radii of curvature of several tens of nanometers. An individual cone is formed when single-crystalline silicon on a silica substrate is irradiated with a single pulse from a KrF excimer laser, homogenized and shaped to a circular spot several microns in diameter. Atomic force microscopy and field-emission scanning electron microscopy were used to characterize these structures. A simple mechanism of formation based on movement of melted material is proposed. Our results suggest that this technique could produce even smaller structures by optimizing the laser processing geometry. © 2004 American Institute of Physics.
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81.16.Mk Laser-assisted deposition
81.07.-b Nanoscale materials and structures: fabrication and characterization
85.45.Db Field emitters and arrays, cold electron emitters
07.79.-v Scanning probe microscopes and components

The effect of an additional infrared laser on the carrier collection efficiency of InAs quantum dots

E. S. Moskalenko, K. F. Karlsson, V. Donchev, P. O. Holtz, W. V. Schoenfeld, and P. M. Petroff

Appl. Phys. Lett. 84, 4896 (2004); http://dx.doi.org/10.1063/1.1763231 (3 pages) | Cited 4 times

Online Publication Date: 25 May 2004

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We report a micro-photoluminescence study on the influence of single and multi-quantum dots (QDs) on the exposure by a low-energy laser, in addition to the principal exciting laser. At low temperatures, the presence of the low-energy laser effectively quenches the single QD luminescence. This can be explained in terms of an induced screening of a built-in electric field, which plays an important role as a carrier capture mechanism. The influence of the low-energy laser is successively decreasing when the capture efficiency is increased either by elevated crystal temperature or by increased QD densities, full consistent with the proposed model. © 2004 American Institute of Physics.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
78.67.Hc Quantum dots
61.82.Fk Semiconductors

Controlled cleavage of single semiconducting nanowires and study on the suitability of their use as nanocavities for nanolasers

Q. Chen and L.-M. Peng

Appl. Phys. Lett. 84, 4920 (2004); http://dx.doi.org/10.1063/1.1757635 (3 pages) | Cited 2 times

Online Publication Date: 28 May 2004

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Single semiconducting nanowires have been cleaved to desired length at desired locations inside the scanning electron microscope (SEM) using a nanoprobe system. SEM and transmission electron microscope examinations of the cleaved nanowires revealed that the cleaved ends of the nanowires are in general atomic flat, but not without atomic steps. Possible use of the cleaved nanowire as nanocavity for nanolaser was considered, and several key parameters were estimated. In particular, our result shows that, for a semiconducting CdS nanowire, the effect of the atomic steps at the cleaved ends of the nanowire is negligible if the nanowire cavity is longer than several micrometers. © 2004 American Institute of Physics.
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62.20.M- Structural failure of materials
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
61.46.-w Structure of nanoscale materials

Multiwall nanotubes with intramolecular junctions (CNx/C): Preparation, rectification, logic gates, and application

Ping’an Hu, Kai Xiao, Yunqi Liu, Gui Yu, Xianbao Wang, Lei Fu, Guanglei Cui, and Daoben Zhu

Appl. Phys. Lett. 84, 4932 (2004); http://dx.doi.org/10.1063/1.1760212 (3 pages) | Cited 14 times

Online Publication Date: 28 May 2004

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We prepared a large quantity of multiwall nanotubes with intramolecular junctions (CNx/C) by pyrolysis of iron phthalocyanine with or without an inlet of ammonia gas. The nanotubes consist of two sections, one section made of carbon nitride featuring bamboo-like structure and the other one made of carbon featuring empty hollow cylinder structure, and thus the intramolecular junctions were formed in the middle as a result of being doped or undoped with nitrogen. Nanodiode based on a single CNx/C junction shows reproducible rectifying behavior with a rectification ratio of 1.3×103 at ±2 V. In addition, the nanodiode demonstrated as a half-wave rectifier worked at an input sine wave of 1 kHz. Two CNx/C junctions were configured together to exhibit functions of OR and AND logic gates. Moreover, after substituting the wave-detection silicon diode in common transistor radio set with our nanodiode, the radio set still worked normally, representing an important step toward the potential application for nano-scale devices. © 2004 American Institute of Physics.
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81.05.Cy Elemental semiconductors
81.05.ub Fullerenes and related materials
61.46.-w Structure of nanoscale materials
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
85.35.Kt Nanotube devices
84.30.Sk Pulse and digital circuits

Enhancement of third-order nonlinear optical susceptibilities in silica-capped Au nanoparticle films with very high concentrations

Y. Hamanaka, K. Fukuta, A. Nakamura, L. M. Liz-Marzán, and P. Mulvaney

Appl. Phys. Lett. 84, 4938 (2004); http://dx.doi.org/10.1063/1.1760229 (3 pages) | Cited 57 times

Online Publication Date: 28 May 2004

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See Also: Publisher's Note

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Third-order nonlinear optical susceptibilities (χ(3)) and response times have been investigated for silica-capped Au nanoparticles for various volume fractions, p, of Au nanoparticles ranging from 0.027 to 0.66. The imaginary part of χ(3)(Im χ(3)) around the surface plasmon resonance increases with increasing p up to 0.34, and decreases for p>0.39. In addition to the local field enhancement around the surface plasmon resonance in the composite system, an additional enhancement of Im χ(3) due to the interaction between nanoparticles for p<0.39 is observed. © 2004 American Institute of Physics.
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42.65.An Optical susceptibility, hyperpolarizability
73.40.Gk Tunneling
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.66.Sq Composite materials
68.55.-a Thin film structure and morphology

Low-temperature growth and properties of ZnO nanowires

Xuan Wang, Qingwen Li, Zhibo Liu, Jin Zhang, Zhongfan Liu, and Rongming Wang

Appl. Phys. Lett. 84, 4941 (2004); http://dx.doi.org/10.1063/1.1760594 (3 pages) | Cited 66 times

Online Publication Date: 28 May 2004

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ZnO nanowires were obtained through evaporation of zinc powders under a low temperature of 400 °C. These ZnO nanowires, in the diameter of ∼10 nm, were long and curved with lengths of tens of micrometers. High-resolution transmission electron microscopy showed these ZnO nanowires were mostly crystalline structure; however, the kink parts contained dislocations and stacking faults. Furthermore, the movement of dislocations was observed in the kink parts under e-beam irradiation. Photoluminescence and Raman spectra show that there exist oxygen vacancies in the ZnO nanowires. Possible reasons for the growth and properties of ZnO nanowires were discussed. © 2004 American Institute of Physics.
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81.05.Dz II-VI semiconductors
81.07.Vb Quantum wires
61.82.Fk Semiconductors
61.80.Fe Electron and positron radiation effects
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
78.55.Et II-VI semiconductors
78.30.Fs III-V and II-VI semiconductors
78.66.Hf II-VI semiconductors
68.65.La Quantum wires (patterned in quantum wells)
68.55.-a Thin film structure and morphology
78.67.Lt Quantum wires
61.72.Nn Stacking faults and other planar or extended defects
68.37.Lp Transmission electron microscopy (TEM)
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
61.72.J- Point defects and defect clusters

Silicon nanowhiskers grown on 〈111〉Si substrates by molecular-beam epitaxy

L. Schubert, P. Werner, N. D. Zakharov, G. Gerth, F. M. Kolb, L. Long, U. Gösele, and T. Y. Tan

Appl. Phys. Lett. 84, 4968 (2004); http://dx.doi.org/10.1063/1.1762701 (3 pages) | Cited 136 times

Online Publication Date: 28 May 2004

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Silicon nanowhiskers in the diameter range of 70 to 200 nm were grown on 〈111〉-oriented silicon substrates by molecular-beam epitaxy. Assuming the so-called “vapor–liquid–solid” (VLS) growth process to operate, we initiated the growth by using small clusters of gold at the silicon interface as seeds. The in situ generation of the Au clusters as well as the growth parameters of the whiskers are discussed. The experimentally observed radius dependence of the growth velocity of the nanowhiskers is opposite to what is known for VLS growth based on chemical vapor deposition and can be explained by an ad-atom diffusion on the surface of the whiskers. © 2004 American Institute of Physics.
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68.70.+w Whiskers and dendrites (growth, structure, and nonelectronic properties)
81.05.Cy Elemental semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Writing polarization bits on the multiferroic BiMnO3 thin film using Kelvin probe force microscope

J. Y. Son, Bog G. Kim, C. H. Kim, and J. H. Cho

Appl. Phys. Lett. 84, 4971 (2004); http://dx.doi.org/10.1063/1.1762974 (3 pages) | Cited 46 times

Online Publication Date: 28 May 2004

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We report the multiferroic properties of epitaxially (100) oriented BiMnO3 thin film on (100) LaAlO3 substrate and preferentially (111) oriented BiMnO3 thin film on (111) Pt/TiO2/SiO2/Si substrate. Nano-size bits of ferroelectric polarization on the BiMnO3 thin film on (111) Pt/TiO2/SiO2/Si substrate can be easily written and read by Kelvin force microscope (KFM). We found that, for the preferentially (111) oriented BiMnO3 thin film, only ferroelectric polarization has been induced at the low writing biases, which makes the writing and reading process simple. This suggests that the preferentially oriented BiMnO3 thin film is a potential candidate for the high-density data storage device based on KFM. © 2004 American Institute of Physics.
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77.22.Ej Polarization and depolarization
77.80.-e Ferroelectricity and antiferroelectricity
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
68.55.-a Thin film structure and morphology

Photoresponse of sol-gel-synthesized ZnO nanorods

Seung Eon Ahn, Jong Soo Lee, Hyunsuk Kim, Sangsig Kim, Byung Hyun Kang, Kang Hyun Kim, and Gyu Tae Kim

Appl. Phys. Lett. 84, 5022 (2004); http://dx.doi.org/10.1063/1.1763633 (3 pages) | Cited 93 times

Online Publication Date: 28 May 2004

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ZnO nanorods were grown on SiO2/Si substrates by a sol-gel method at low temperatures of around T = 95 °C. The diameters and the lengths of ZnO nanorods increased at high concentrations of zinc nitrate hexahydrate and methenamine solution. Current–voltage characteristics of the ZnO nanorods network followed a typical nonlinear behavior with significant photoresponse below λ<400 nm in air, and the conductance was enhanced in vacuum with negligible photoresponse. In photoluminescence (PL) and photocurrent (PC) spectra, the PL peak (λpeak = 380 nm and 3.26 eV) did not match the PC edge (λedge = 400 nm and 3.1 eV), indicating the nondirect band-gap transition in photocurrent. The origin of the photocurrent was discussed from the point of the influence of the desorption of adsorbed water molecules on the surface or inside the ZnO nanorods. © 2004 American Institute of Physics.
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72.40.+w Photoconduction and photovoltaic effects
79.60.-i Photoemission and photoelectron spectra
81.05.Ea III-V semiconductors
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
81.07.De Nanotubes
61.46.-w Structure of nanoscale materials
68.43.Mn Adsorption kinetics
78.55.Et II-VI semiconductors
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