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28 Jun 2004

Volume 84, Issue 26, pp. 5299-5475

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Appl. Phys. Lett. 84, 5398 (2004); http://dx.doi.org/10.1063/1.1767591 (3 pages)

E. Menard, K. J. Lee, D.-Y. Khang, R. G. Nuzzo, and J. A. Rogers
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Mechanisms of injection enhancement in organic light-emitting diodes through insulating buffer

J. M. Zhao, Y. Q. Zhan, S. T. Zhang, X. J. Wang, Y. C. Zhou, Y. Wu, Z. J. Wang, X. M. Ding, and X. Y. Hou

Appl. Phys. Lett. 84, 5377 (2004); http://dx.doi.org/10.1063/1.1764943 (3 pages) | Cited 16 times

Online Publication Date: 17 June 2004

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Three types of organic light-emitting diodes are fabricated. Tris-8-hydroxyquinoline aluminum (Alq3) is used as an electron-transporting layer (ETL) and sodium stearate (NaSt) as an electron-injecting buffer. The optimal thickness of NaSt for electron injection is different for cathodes of different metals, such as Mg, Al, and Ag. This is attributed to the different work functions of cathodes, which result in different initial barrier heights for electron injection from cathodes into ETL, and explained based on tunneling theory.
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85.60.Jb Light-emitting devices

A printable form of silicon for high performance thin film transistors on plastic substrates

E. Menard, K. J. Lee, D.-Y. Khang, R. G. Nuzzo, and J. A. Rogers

Appl. Phys. Lett. 84, 5398 (2004); http://dx.doi.org/10.1063/1.1767591 (3 pages) | Cited 32 times

Online Publication Date: 17 June 2004

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Free-standing micro- and nanoscale objects of single crystal silicon can be fabricated from silicon-on-insulator wafers by lithographic patterning of resist, etching of the exposed top silicon, and removing the underlying SiO2 to lift-off the remaining silicon. A large collection of such objects constitutes a type of material that can be deposited and patterned, by dry transfer printing or solution casting, onto plastic substrates to yield mechanically flexible thin film transistors that have excellent electrical properties. Effective mobilities of devices built with this material, which we refer to as microstructured silicon (μs-Si), are demonstrated to be as high as 180 cm2/V s on plastic substrates. This form of “top down” microtechnology might represent an attractive route to high performance flexible electronic systems.
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85.30.Tv Field effect devices
85.40.Hp Lithography, masks and pattern transfer
81.65.Cf Surface cleaning, etching, patterning

In situ ultraviolet treatment in an Ar ambient upon p-type hydrogenated amorphous silicon–carbide windows of hydrogenated amorphous silicon based solar cells

Seung Yeop Myong, Sang Soo Kim, and Koeng Su Lim

Appl. Phys. Lett. 84, 5416 (2004); http://dx.doi.org/10.1063/1.1767601 (3 pages) | Cited 16 times

Online Publication Date: 17 June 2004

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We proposed an in situ postdeposition ultraviolet treatment in an Ar ambient (UTA) to improve the p/i interface of amorphous silicon based solar cell. We have increased the conversion efficiency by ∼ 16% by improving the built-in potential and reducing recombination at the p/i interface. Through spectroscopic ellipsometry and Fourier-transform infrared measurements, it is concluded that the UTA process induces structural modification of the p-type hydrogenated amorphous silicon–carbide (p-a-SiC:H) window layer. An ultrathin p-a-SiC:H contamination layer formed during the UTA process acts as a buffer layer at the interface.
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84.60.Jt Photoelectric conversion
81.05.Gc Amorphous semiconductors
81.05.Cy Elemental semiconductors
78.30.Hv Other nonmetallic inorganics
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
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