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28 Jun 2004

Volume 84, Issue 26, pp. 5299-5475

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Appl. Phys. Lett. 84, 5398 (2004); http://dx.doi.org/10.1063/1.1767591 (3 pages)

E. Menard, K. J. Lee, D.-Y. Khang, R. G. Nuzzo, and J. A. Rogers
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Dielectric relaxation in 91% Pb(Zn1/3Nb2/3)O3–9% PbTiO3 single crystal at low temperature

Peng Bao, Feng Yan, Yurong Dai, Jingsong Zhu, Yening Wang, and Haosu Luo

Appl. Phys. Lett. 84, 5317 (2004); http://dx.doi.org/10.1063/1.1766081 (3 pages) | Cited 3 times

Online Publication Date: 17 June 2004

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The temperature dependent dielectric response of 〈001〉-oriented 91% Pb(Zn1/3Nb2/3)O3–9% PbTiO3 single crystal has been studied at various frequencies. A dielectric relaxation process with a broad distribution of time constant has been observed below 180 K. The peak temperature of the dielectric loss can be fitted well with Volger–Fulcher relation. We assume this relaxation process can be attributed to the freezing of ferroelectric macrodomain walls induced by the pinning of point defects.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Gm Dielectric loss and relaxation
77.22.Ch Permittivity (dielectric function)
77.80.Dj Domain structure; hysteresis
61.72.J- Point defects and defect clusters

Eu2+-doped Ca-α-SiAlON: A yellow phosphor for white light-emitting diodes

Rong-Jun Xie, Naoto Hirosaki, Ken Sakuma, Yoshinobu Yamamoto, and Mamoru Mitomo

Appl. Phys. Lett. 84, 5404 (2004); http://dx.doi.org/10.1063/1.1767596 (3 pages) | Cited 186 times

Online Publication Date: 17 June 2004

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In this letter, a yellow oxynitride phosphor α-SiAlON with compositions of Ca0.625EuxSi0.75−3xAl1.25+3xOxN16−x (Ca-α-SiAlON:Eu, x = 0–25) was prepared by gas pressure sintering. The diffuse reflection spectrum, photoluminescence spectrum, and chromaticity of the powder phosphors were presented. It absorbs light efficiently in the UV–visible spectral region, and shows a single intense broadband emission at 583–603 nm. This phosphor may become a good candidate for creating white light, typically warm white light, when coupled to a blue light-emitting diode (λem = 450 nm).
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78.55.Hx Other solid inorganic materials
78.40.Ha Other nonmetallic inorganics

Temperature stability of permittivity and dielectric relaxation in multilayered thin films of (Ba0.80Sr0.20)(Ti1−xZrx)O3 with a compositionally graded layer

B. L. Cheng, Can Wang, S. Y. Wang, T. W. Button, H. B. Lu, Y. L. Zhou, Z. H. Chen, and G. Z. Yang

Appl. Phys. Lett. 84, 5431 (2004); http://dx.doi.org/10.1063/1.1767605 (3 pages) | Cited 14 times

Online Publication Date: 17 June 2004

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Mutilayered thin (Ba0.80Sr0.20)(Ti1−xZrx)O3 (BSTZ) films with various compositional graded layers (CGL) have been successfully fabricated on Nb doped SrTiO3 substrates by pulsed-laser deposition technique with four BSTZ ceramic targets (x = 0.36,0.18,0.08,0). The gradients of compositions are artificially tailored in multilayered thin films by varying the CGL, and x-ray diffraction indicates that the internal stress is modulated in the multilayered films. Influence of the composition gradient on the dielectric properties has been investigated at the temperature range from 120 to 440 K. Temperature stability of permittivity of the multilayered films is found to be improved with the increase of the gradients of compositions. Moreover, a dielectric relaxation process with activation energy of 1.02 eV is observed, which is also related to the composition gradient, and can be described to motion of oxygen vacancies. The results show that the temperature stability of permittivity can be tailed by the design of multilayered film with CGL, and the internal stress induced by the gradients of composition could influence the relaxation process.
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77.55.-g Dielectric thin films
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
68.55.-a Thin film structure and morphology
77.22.Gm Dielectric loss and relaxation
77.22.Ch Permittivity (dielectric function)
81.15.Fg Pulsed laser ablation deposition

Improvement of the dielectric and ferroelectric properties in superlattice structure of Pb(Zr,Ti)O3 thin films grown by a chemical  solution route

F. M. Pontes, E. Longo, E. R. Leite, and J. A. Varela

Appl. Phys. Lett. 84, 5470 (2004); http://dx.doi.org/10.1063/1.1751623 (3 pages) | Cited 20 times

Online Publication Date: 17 June 2004

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Making heterolayered perovskite materials constitutes an approach for the creation of better dielectric and ferroelectric properties. In the experiment reported here, heterolayered PZT40/PZT60 films were grown on Pt/Ti/SiO2/Si (100) by a chemical solution deposition. The dielectric constant of the heterolayered thin film was significantly enhanced compared with that of pure PZT40 and PZT60 thin films. A dielectric constant of 701 at 100 kHz was observed for a stacking periodicity of six layers having a total thickness of 150 nm. The heterolayered film exhibited greater remanent polarization than PZT60 and PZT40 films. The values of remanent polarization were 7.9, 18.5, and 31 μC/cm2, respectively, for pure PZT60, PZT40, and heterolayered thin films, suggesting that the superior dielectric and ferroelectric properties of the heterolayered thin film resulted from a cooperative interaction between the ferroelectric phases made from alternating tetragonal and rhombohedral phases of PZT, simulating the morphotropic phase boundary of this system. © 2004 American Institute of Physics.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
68.65.Cd Superlattices
77.22.Ch Permittivity (dielectric function)
77.22.Ej Polarization and depolarization
77.80.Dj Domain structure; hysteresis
77.22.Gm Dielectric loss and relaxation
68.35.B- Structure of clean surfaces (and surface reconstruction)
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