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28 Jun 2004

Volume 84, Issue 26, pp. 5299-5475

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Appl. Phys. Lett. 84, 5398 (2004); http://dx.doi.org/10.1063/1.1767591 (3 pages)

E. Menard, K. J. Lee, D.-Y. Khang, R. G. Nuzzo, and J. A. Rogers
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Optical properties of Mn4+ ions in GaN:Mn codoped with Mg acceptors

B. Han, R. Y. Korotkov, B. W. Wessels, and M. P. Ulmer

Appl. Phys. Lett. 84, 5320 (2004); http://dx.doi.org/10.1063/1.1766082 (3 pages) | Cited 11 times

Online Publication Date: 17 June 2004

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The optical properties of Mn–Mg-codoped epitaxial GaN were studied. Addition of Mg acceptors quenches the weak manganese-related photoluminescence (PL) band at 1.3 eV in GaN:Mn and a series of sharp PL peaks are observed at 1 eV in codoped epilayers. The change in PL spectra indicates that the Mg addition stabilizes the Mn4+ charge state by decreasing the Fermi level. The 1 eV PL peaks are tentatively attributed to intracenter transitions involving Mn4+ ions. Spin-allowed 3d-shell 4T2–4T1 transitions and their phonon replicas are involved. The relative intensities of the sharp peaks are strongly dependent on the excitation wavelength, indicating that the optically active Mn4+ centers involved in the separate peaks are different. The temperature dependence of the PL spectrum suggests the presence of at least three distinct Mn4+ complex centers.
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75.50.Pp Magnetic semiconductors
75.50.Dd Nonmetallic ferromagnetic materials
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
71.55.Eq III-V semiconductors

Formation of regular arrays of submicron GaAs dots on silicon

J. D. Beach, C. Veauvy, R. Caputo, R. T. Collins, A. A. Khandekar, T. F. Kuech, C. K. Inoki, T. S. Kuan, and R. E. Hollingsworth

Appl. Phys. Lett. 84, 5323 (2004); http://dx.doi.org/10.1063/1.1766391 (3 pages)

Online Publication Date: 17 June 2004

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A combination of photolithography written with a near-field scanning optical microscope, gallium electrodeposition, and arsine annealing was used to produce regular arrays of submicron GaAs dots on a silicon substrate. Electrodeposition on a patterned Si surface produced an array of roughly hemispherical Ga dots. Annealing in arsine converted the gallium to GaAs, and caused the dots to develop faceted features. Transmission electron microscope measurements showed that the GaAs dots were polycrystalline, but had only a few grains. The dots did not have a preferred orientation relative to the substrate. Metalorganic chemical vapor deposition growth occurred selectively on these dots, forming regular arrays of GaAs disks up to 20 μm in diameter. The GaAs disks exhibited characteristic GaAs low-temperature photoluminescence. This method has application for precisely positioning semiconductor dots or tailoring the grain size of polycrystalline films.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
81.15.Pq Electrodeposition, electroplating
61.72.Cc Kinetics of defect formation and annealing
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Ballistic transport in InSb/InAlSb antidot lattices

Hong Chen, J. J. Heremans, J. A. Peters, N. Goel, S. J. Chung, and M. B. Santos

Appl. Phys. Lett. 84, 5380 (2004); http://dx.doi.org/10.1063/1.1764945 (3 pages) | Cited 5 times

Online Publication Date: 17 June 2004

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We investigate magnetotransport properties of antidot lattices fabricated on high-mobility InSb/InAlSb heterostructures. The temperature dependencies of the ballistic magnetoresistance peaks due to the antidot lattice are studied, and compared with mobility and density data over the same temperature range. A scattering time particular to antidot lattices is deduced, with a linear dependence on temperature between 0.4 and 50 K, attributed to acoustic phonon scattering. The mobility does not vary substantially over this temperature range, whereas above ∼ 60 K a quadratic dependence of inverse mobility on temperature is noticed, attributed to optical phonon scattering. The very weak temperature dependence of the width of the ballistic magnetoresistance peaks indicates negligible thermal smearing for electrons in the InSb quantum well, a result of the small electron effective mass.
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72.20.My Galvanomagnetic and other magnetotransport effects
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
73.63.Kv Quantum dots
75.47.-m Magnetotransport phenomena; materials for magnetotransport
72.20.Ht High-field and nonlinear effects

Mobility studies of field-effect transistor structures based on anthracene single crystals

A. N. Aleshin, J. Y. Lee, S. W. Chu, J. S. Kim, and Y. W. Park

Appl. Phys. Lett. 84, 5383 (2004); http://dx.doi.org/10.1063/1.1767282 (3 pages) | Cited 18 times

Online Publication Date: 17 June 2004

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The charge carrier transport in anthracene single crystals has been studied by means of field-effect transistor (FET) structure. The FET mobility (μFET) revealed the nonmonotonous, reliant on gate-voltage (Vg), temperature dependence with the maximum μFET ∼ 0.02 cm2/V s at T ∼ 170–180 K and Vg ∼ −30 V. At temperatures below 180 K the mobility decreases and becomes thermally activated with the Vg-dependent activation energy Ea ∼ 40–70 meV governed by shallow traps. The space-charge-limited current is the dominant transport mechanism in FET structures based on anthracene single crystals.
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85.30.Tv Field effect devices
72.20.Ht High-field and nonlinear effects

Work-function difference between Al and n-GaN from Al-gated n-GaN/nitrided-thin-Ga2O3/SiO2 metal oxide semiconductor structures

Choelhwyi Bae, Cristiano Krug, Gerald Lucovsky, Arpan Chakraborty, and Umesh Mishra

Appl. Phys. Lett. 84, 5413 (2004); http://dx.doi.org/10.1063/1.1767599 (3 pages) | Cited 5 times

Online Publication Date: 17 June 2004

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In most previous reports on Al-gated n-GaN/SiO2 metal–oxide–semiconductor (MOS) structures, the work–function difference between Al and n-GaN (ϕms) has been chosen as 0 V by assuming that the work function of the Al gate and n‐GaN are both 4.1 eV. In this letter, ϕms is determined as ∼ 0.1 V using Al-gated n-GaN/nitrided-thin-Ga2O3/SiO2 MOS capacitors by measuring flatband voltage as a function of oxide thickness. Formation of an ultrathin ( ∼ 0.6-nm-thick) Ga2O3 layer on n-GaN prior to the deposition of SiO2 is important to prevent uncontrolled parasitic oxidation of then-GaN surface and possibly reduces the interface dipole between n-GaN and SiO2.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
84.32.Tt Capacitors
73.30.+y Surface double layers, Schottky barriers, and work functions

Photovoltage study of charge injection from dye molecules into transparent hole and electron conductors

B. Mahrov, G. Boschloo, A. Hagfeldt, L. Dloczik, and Th. Dittrich

Appl. Phys. Lett. 84, 5455 (2004); http://dx.doi.org/10.1063/1.1767961 (3 pages) | Cited 31 times

Online Publication Date: 17 June 2004

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Transient and spectral photovoltage (PV) have been investigated for charge injection from a dye [Ru(dcbpyH2)2(NCS)2] into transparent hole (CuSCN, CuI, CuAlO2) and electron (TiO2, SnO2:F) conductors. The PV signal rises to a maximum within 10 ns to 10 μs, depending on the transparent hole or electron conductor and on the mechanism of charge separation. The efficiency of hole and electron injection is of the same order while the effective lifetimes of injected charge vary between several μs and 1 ms for the samples used. The thresholds for charge injection from the dye range between 1.6 and 1.8 eV depending on the material on which the dye is adsorbed.
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72.40.+w Photoconduction and photovoltaic effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
68.43.Mn Adsorption kinetics
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