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28 Jun 2004

Volume 84, Issue 26, pp. 5299-5475

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Appl. Phys. Lett. 84, 5398 (2004); http://dx.doi.org/10.1063/1.1767591 (3 pages)

E. Menard, K. J. Lee, D.-Y. Khang, R. G. Nuzzo, and J. A. Rogers
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Sensitivity and gigahertz counting performance of NbN superconducting single-photon detectors

A. Korneev, P. Kouminov, V. Matvienko, G. Chulkova, K. Smirnov, B. Voronov, G. N. Gol’tsman, M. Currie, W. Lo, K. Wilsher, J. Zhang, W. Słysz, A. Pearlman, A. Verevkin, and Roman Sobolewski

Appl. Phys. Lett. 84, 5338 (2004); http://dx.doi.org/10.1063/1.1764600 (3 pages) | Cited 102 times

Online Publication Date: 17 June 2004

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We have measured the quantum efficiency (QE), GHz counting rate, jitter, and noise-equivalent power (NEP) of nanostructured NbN superconducting single-photon detectors (SSPDs) in the visible to infrared radiation range. Our 3.5-nm-thick and 100- to 200-nm-wide meander-type devices (total area 10×10 μm2), operating at 4.2 K, exhibit an experimental QE of up to 20% in the visible range and ∼ 10% at 1.3 to 1.55 μm wavelength and are potentially sensitive up to midinfrared ( ∼ 10 μm) radiation. The SSPD counting rate was measured to be above 2 GHz with jitter <18 ps, independent of the wavelength. The devices’ NEP varies from ∼ 10−17 W/Hz1/2 for 1.55 μm photons to ∼ 10−20W/Hz1/2 for visible radiation. Lowering the SSPD operating temperature to 2.3 K significantly enhanced its performance, by increasing the QE to ∼ 20% and lowering the NEP level to ∼ 3×10−22 W/Hz1/2, both measured at 1.26 μm wavelength.
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85.25.Oj Superconducting optical, X-ray, and γ-ray detectors (SIS, NIS, transition edge)
85.25.Pb Superconducting infrared, submillimeter and millimeter wave detectors
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.25.Am Superconducting device characterization, design, and modeling

ZnMgO epilayers and ZnO–ZnMgO quantum wells for optoelectronic applications in the blue and UV spectral region

Th. Gruber, C. Kirchner, R. Kling, F. Reuss, and A. Waag

Appl. Phys. Lett. 84, 5359 (2004); http://dx.doi.org/10.1063/1.1767273 (3 pages) | Cited 32 times

Online Publication Date: 17 June 2004

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We have investigated the properties of ZnMgO epilayers and ZnO–ZnMgO quantum well structures grown by metalorganic vapor-phase epitaxy. A well-controlled incorporation of magnesium, x ⩽ 0.10, could be confirmed resulting in a blueshift of the photoluminescence emission wavelength of the Zn1−xMgxO layers up to 200 meV. Using ZnMgO as barrier material, ZnO–ZnMgO quantum well structures with different well widths have then been fabricated. The confinement effect in the ZnO quantum wells leads to the expected increase of the corresponding quantum well emission energy with decreasing well width. A comparison to calculations also suggests a further enhancement of the exciton binding energy in the quantum wells of up to 90 meV.
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78.67.De Quantum wells
68.65.Fg Quantum wells
78.55.Et II-VI semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
71.35.Cc Intrinsic properties of excitons; optical absorption spectra

All-optical multiphoton absorption figures of merit: Polydiacetylene poly (bis para-toluene sulfonate) of 2,4-hexadiyne-1,6 diol

Fumiyo Yoshino, Sergey Polyakov, and George I. Stegeman

Appl. Phys. Lett. 84, 5362 (2004); http://dx.doi.org/10.1063/1.1767276 (3 pages) | Cited 4 times

Online Publication Date: 17 June 2004

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The all-optical switching figures of merit are reported for the single crystal PTS (polydiacetylene poly (bis para-toluene sulfonate) of 2,4-hexadiyne-1,6 diol). Included are the effects of the absorption mechanisms from linear up to four-photon over the wavelength range 1.2–2.2 μm.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.70.Jk Polymers and organics
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Size-dependent oxygen-related electronic states in silicon nanocrystals

J. S. Biteen, N. S. Lewis, H. A. Atwater, and A. Polman

Appl. Phys. Lett. 84, 5389 (2004); http://dx.doi.org/10.1063/1.1765200 (3 pages) | Cited 36 times

Online Publication Date: 17 June 2004

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Silicon nanocrystals embedded in SiO2 were isolated with a selective etching procedure, and the isolated nanocrystals’ excitonic emission energy was studied during controlled oxidation. Nanocrystals having initial diameters, d0, of ∼ 2.9–3.4 nm showed a photoluminescence (PL) blueshift upon oxidatively induced size reduction, as expected from models of quantum confinement. Oxidation of smaller Si nanocrystals (d0 ∼ 2.5–2.8 nm) also initially resulted in a PL blueshift, but a redshift in the PL was then observed after growth of ∼ 0.3 monolayers of native oxide. This decrease in excitonic emission energy during oxidation is consistent with the theoretically predicted formation of an oxygen-related excitonic recombination state.
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78.55.Hx Other solid inorganic materials
78.66.Sq Composite materials
81.65.Cf Surface cleaning, etching, patterning
81.65.Mq Oxidation

Characterization of line-defect-waveguide lasers in two-dimensional photonic-crystal slabs

Atsushi Sugitatsu, Takashi Asano, and Susumu Noda

Appl. Phys. Lett. 84, 5395 (2004); http://dx.doi.org/10.1063/1.1767285 (3 pages) | Cited 16 times

Online Publication Date: 17 June 2004

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Here we investigate a line-defect-waveguide laser in a two-dimensional photonic-crystal slab. The change δλ in lasing wavelength for a change δW in waveguide width is found to be extremely large: δλ/δW = 2. It is two orders of magnitude greater than that for a conventional distributed-feedback laser. An investigation of the electromagnetic-field distribution at the waveguide-mode edge is made, giving an indication of the cavity-mode structure for lasing oscillation. Fourier transform analysis reveals that the extremely large tunability originates from the “zigzag” mode behavior of the line-defect waveguide in the photonic crystal, due to two-dimensional distributed feedback and reflection.
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42.55.Tv Photonic crystal lasers and coherent effects
42.70.Qs Photonic bandgap materials
42.55.Px Semiconductor lasers; laser diodes

Optimization of mid-infrared InAs/GaSb type-II superlattices

H. J. Haugan, F. Szmulowicz, G. J. Brown, and K. Mahalingam

Appl. Phys. Lett. 84, 5410 (2004); http://dx.doi.org/10.1063/1.1767598 (3 pages) | Cited 11 times

Online Publication Date: 17 June 2004

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The effect of small changes in GaSb layer width on the photoresponse spectrum of 20.5 Å InAs/InSb-interfaces/X Å GaSb type-II superlattice (SL) suitable for mid-infrared detection was investigated. By decreasing the GaSb width X from 27 to 18 Å, the cut-off wavelength was increased from 4.03 to 4.55 μm. This decrease of the SL band gap and other effects of the design changes on photoresponse spectrum with narrower GaSb layers are explained by a nonperturbative, modified envelope function approximation calculation that includes the interface coupling of heavy, light, and spin–orbit holes resulting from the in-plane asymmetry at InAs/GaSb interfaces.
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73.21.Cd Superlattices
71.20.Nr Semiconductor compounds
85.25.Pb Superconducting infrared, submillimeter and millimeter wave detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)

Metalorganic vapor phase epitaxy InSb p+nn+ photodiodes with low dark current

Y. Paltiel, A. Sher, A. Raizman, S. Shusterman, M. Katz, A. Zemel, Z. Calahorra, and M. Yassen

Appl. Phys. Lett. 84, 5419 (2004); http://dx.doi.org/10.1063/1.1767602 (3 pages) | Cited 1 time

Online Publication Date: 17 June 2004

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Photodiodes of InSb were fabricated on epilayers grown by metalorganic vapor phase epitaxy (MOVPE). Dark reverse current density as low as 1×10−7 A/cm2 at −0.1 V bias, and zero-bias-resistance area products as high as 1×106 Ω cm2 were measured. These values are comparable to the best values reported for InSb diodes grown by molecular-beam epitaxy. The very good uniformity of the diode dark current implies that MOVPE is a promising growth technique for the fabrication of state-of-the-art focal plane InSb detector arrays.
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85.60.Dw Photodiodes; phototransistors; photoresistors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.Ea III-V semiconductors

Photonic crystals through holographic lithography: Simple cubic, diamond-like, and gyroid-like structures

Chaitanya K. Ullal, Martin Maldovan, Edwin L. Thomas, Gang Chen, Yong-Jin Han, and Shu Yang

Appl. Phys. Lett. 84, 5434 (2004); http://dx.doi.org/10.1063/1.1765734 (3 pages) | Cited 71 times

Online Publication Date: 17 June 2004

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See Also: Erratum

Show Abstract
We show how to fabricate three basic photonic crystal structures with simple cubic, fcc, and bcc translational symmetry by interference lithography. The structures are fabricable by the interference of beams launched from the same half space. The simple cubic structure is size scalable while the structure with fcc translational symmetry possesses two band gaps. Both these structures are experimentally realized.
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42.70.Qs Photonic bandgap materials
42.82.Cr Fabrication techniques; lithography, pattern transfer

Nonlinear transmission properties of a deep-etched microstructured waveguide

S. Linden, J. P. Mondia, H. M. Van Driel, T. C. Kleckner, C. R. Stanley, D. Modotto, A. Locatelli, C. De Angelis, R. Morandotti, and J. S. Aitchison

Appl. Phys. Lett. 84, 5437 (2004); http://dx.doi.org/10.1063/1.1765738 (3 pages) | Cited 1 time

Online Publication Date: 17 June 2004

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In this letter, we investigate the nonlinear transmission properties of a one-dimensional micro-structured AlGaAs waveguide with a defect in the middle of a deep-etched Bragg grating. The transmitted spectrum depends on the spectral position of the incident pulse spectrum with respect to the defect mode as well as the pulse intensity. These findings are very important for all optical switching applications and can be explained by the interplay between self-phase modulation of the incident 250 fs pulses in the waveguide and the filtering properties of the defect mode.
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42.65.Wi Nonlinear waveguides
81.65.Cf Surface cleaning, etching, patterning
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.79.Dj Gratings

Single-mode operation of terahertz quantum cascade lasers with distributed feedback resonators

Lukas Mahler, Rüdeger Köhler, Alessandro Tredicucci, Fabio Beltram, Harvey E. Beere, Edmund H. Linfield, David A. Ritchie, and A. Giles Davies

Appl. Phys. Lett. 84, 5446 (2004); http://dx.doi.org/10.1063/1.1767957 (3 pages) | Cited 15 times

Online Publication Date: 17 June 2004

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Distributed feedback terahertz quantum-cascade lasers emitting at 4.34 and 4.43 THz are presented. Mode selection is based on a complex-coupling scheme implemented into the top-contact layer by a combination of wet chemical etching and ohmic-contact deposition. Single-mode emission stable at all injection currents and operating temperatures is shown, with a side-mode suppression ratio exceeding 20 dB. Peak output powers of up to 1.8 mW are obtained at low temperatures.
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42.55.Px Semiconductor lasers; laser diodes
81.65.Cf Surface cleaning, etching, patterning
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