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12 Jan 2004

Volume 84, Issue 2, pp. 161-308

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Appl. Phys. Lett. 84, 161 (2004); http://dx.doi.org/10.1063/1.1639505 (3 pages)

Hatice Altug and Jelena Vučković
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Highly efficient red phosphorescent light-emitting diodes based on ruthenium(II)-complex-doped semiconductive polymers

Hong Xia, Chengbo Zhang, Song Qiu, Ping Lu, Jingying Zhang, and Yuguang Ma

Appl. Phys. Lett. 84, 290 (2004); http://dx.doi.org/10.1063/1.1637456 (3 pages) | Cited 32 times

Online Publication Date: 7 January 2004

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Red electrophosphorescence from light-emitting devices based on ruthenium(II)-complex [Ru(4,7-Ph2-phen)3]2+-doped wide-band-gap semiconductive polymers, i.e., poly(vinylcarbazole) (PVK), polydihexylfluorene (PDHF), and ladderlike polyphenylene (LPPP), as the emitting layers are reported. However, only highly efficient energy transfer was investigated in a PVK system, not only because of the relatively longer lifetime of its excited state compared with PDHF and LPPP, but also because of the good chemical compatibility of [Ru(4,7-Ph2-phen)3]2+ with PVK. The EL spectra show the characteristic spectrum of [Ru(4,7-Ph2-phen)3]2+, at a peak of 612 nm and Commission Internationale del’Eclairage of (0.62, 0.37). The optimized device indium tin oxide/PVK: 5 wt % [Ru(4,7-Ph2-phen)3]2+/PBD/Alq3/LiF/Al shows the maximum luminance efficiency and power efficiency as 8.6 cd/A and 2.1 lm/W, respectively. © 2004 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.55.Kz Solid organic materials
78.60.Fi Electroluminescence
78.66.Qn Polymers; organic compounds
71.20.Nr Semiconductor compounds

High-speed, short-channel polycrystalline silicon thin-film transistors

S. D. Brotherton, C. Glasse, C. Glaister, P. Green, F. Rohlfing, and J. R. Ayres

Appl. Phys. Lett. 84, 293 (2004); http://dx.doi.org/10.1063/1.1639137 (3 pages) | Cited 13 times

Online Publication Date: 7 January 2004

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Results are presented on the performance of low-temperature, short-channel polycrystalline silicon (poly-Si) thin-film transistors (TFTs), with channel length down to 0.5 μm, and scaled gate oxide thickness down to 20 nm. Good TFT switching characteristics were obtained, and the uniformity of short-channel TFTs was shown to have a standard deviation of better then 10%, even for channel widths as small as 4 μm. The 0.5 μm TFTs have been incorporated into a 15-stage complementary pair metal-oxide-Si transistor ring oscillator, which, at a supply voltage of 3 V, operated with a delay/stage of ∼ 0.1 ns. © 2004 American Institute of Physics.
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85.30.Tv Field effect devices

Contact resistance in organic thin film transistors

Graciela B. Blanchet, C. R. Fincher, Michael Lefenfeld, and J. A. Rogers

Appl. Phys. Lett. 84, 296 (2004); http://dx.doi.org/10.1063/1.1639937 (3 pages) | Cited 73 times

Online Publication Date: 7 January 2004

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This letter reports on the unexpected dependence of contact resistance on the dielectric layer for pentacene thin film transistors with printed organic conducting electrodes. While the intrinsic mobility is weakly reliant on the dielectric, the contact resistance does vary considerably with dielectric layer. We show that while morphological changes are not apparent, contact resistances vary by an order of magnitude. This result suggests that the barrier to charge injection may depend not only on interactions at the complex triple interface but also on the details of the electronic structure at the semiconductor/dielectric interface. © 2004 American Institute of Physics.
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85.30.Tv Field effect devices
73.40.Cg Contact resistance, contact potential
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Velocity overshoot in ultrathin double-gate silicon-on-insulator transistors

F. Gámiz

Appl. Phys. Lett. 84, 299 (2004); http://dx.doi.org/10.1063/1.1639133 (3 pages) | Cited 2 times

Online Publication Date: 7 January 2004

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Concerning electron velocity overshoot in ultrathin double-gate silicon-on-insulator transistors, as a function of the silicon thickness and the electron sheet density, it is proved that for very small silicon thicknesses (smaller than 5 nm), velocity overshoot behavior is dominated by the average conduction effective mass; that is, the lower the average conduction effective mass, the higher the velocity overshoot peak. Thus, the velocity overshoot peak increases as the silicon thickness decreases, unlike low-field electron mobility, which diminishes abruptly at silicon thicknesses below 5 nm. This fact enables further reduction in the device channel length, in contrast to what might be supposed from the low-field mobility behavior. © 2004 American Institute of Physics.
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85.30.Tv Field effect devices

Observation of the apparent metal–insulator transition of high-mobility two-dimensional electron system in a Si/Si1−xGex heterostructure

K. Lai, W. Pan, D. C. Tsui, and Ya-Hong Xie

Appl. Phys. Lett. 84, 302 (2004); http://dx.doi.org/10.1063/1.1639507 (3 pages) | Cited 6 times

Online Publication Date: 7 January 2004

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Field-effect transistors are fabricated from the Si/Si1−xGex heterostructures. The density of the two-dimensional electron system (2DES) in the strained Si quantum well can be controllably tuned from 2.13×1011 to 4.24×1011 cm−2. The temperature dependence of the resistivity of the 2DES was measured and the apparent metal–insulator transition was observed. Its main features are similar to those reported in other semiconductor-based two-dimensional systems. © 2004 American Institute of Physics.
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85.30.Tv Field effect devices
72.60.+g Mixed conductivity and conductivity transitions
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