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12 Jan 2004

Volume 84, Issue 2, pp. 161-308

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Appl. Phys. Lett. 84, 161 (2004); http://dx.doi.org/10.1063/1.1639505 (3 pages)

Hatice Altug and Jelena Vučković
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Very large dielectric constant of highly oriented Pb1−xBaxTiO3 thin films prepared by chemical deposition

F. M. Pontes, E. R. Leite, G. P. Mambrini, M. T. Escote, E. Longo, and J. A. Varela

Appl. Phys. Lett. 84, 248 (2004); http://dx.doi.org/10.1063/1.1637150 (3 pages) | Cited 7 times

Online Publication Date: 7 January 2004

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Highly (100) oriented Pb0.8Ba0.2TiO3/LaNiO3 structures were grown on LaAlO3(100) substrates by using a wet, soft chemical method and crystallized by the microwave oven technique. The Au/PBT/LaNiO3/LaAlO3 capacitor shows a hysteresis loop with remnant polarization, Pr, of 15 μC/cm2, and coercive field, Ec, of 47 kV/cm at an applied voltage of 3 V, along with a dielectric constant over 1800. Atomic force microscopy showed that Pb0.8Ba0.2TiO3 is composed of large grains about 300 nm. The experimental results demonstrated that the microwave preparation is rapid, clean, and energy efficient. Therefore, we demonstrated that the combination of the soft chemical method with the microwave process is a promising technique to grow highly oriented thin films with excellent dielectric and ferroelectric properties, which can be used in various integrated device applications. © 2004 American Institute of Physics.
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
68.55.-a Thin film structure and morphology
77.80.Dj Domain structure; hysteresis
84.32.Tt Capacitors

Ferroelectricity in BaTiO3 nanoscopic structures

M. G. Stachiotti

Appl. Phys. Lett. 84, 251 (2004); http://dx.doi.org/10.1063/1.1637142 (3 pages) | Cited 27 times

Online Publication Date: 7 January 2004

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The ground-state polarization of BaTiO3 nanosized films and cells is studied using an atomic-level simulation approach based on a shell model with parameters obtained from first-principles calculations. We demonstrate that the critical thickness for ferroelectricity in a free-standing BaTiO3 stress-free film is 3.6 nm, and a decrease in lateral size to nanometric dimensions does not spoil the ferroelectric properties of the film. Nanocells with different lateral faces, BaO or TiO2 planes, present a different domain structure and polarization due to a strong surface effect. © 2004 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization

Formation of 90° elastic domains during local 180° switching in epitaxial ferroelectric thin films

Lang Chen, J. Ouyang, C. S. Ganpule, V. Nagarajan, R. Ramesh, and A. L. Roytburd

Appl. Phys. Lett. 84, 254 (2004); http://dx.doi.org/10.1063/1.1633970 (3 pages) | Cited 22 times

Online Publication Date: 7 January 2004

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90° elastic domains were observed after local polings in epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 thin films via piezoresponse force microscopy. An area of internal stress arises under a conductive atomic force microscope tip due to the opposite signs of the converse piezoelectric effects in the switched domain and the unswitched films surrounding. The formation of 90° domains leads to the relaxation of the internal stress and stabilization of 180° domain after turning off the electric field applied by the tip. The criterion that formulates the necessary condition for realization of the relaxation mechanism is presented as well. © 2004 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.Dj Domain structure; hysteresis
77.80.Fm Switching phenomena
62.20.D- Elasticity
77.22.Ej Polarization and depolarization

Polarization reversal anti-parallel to the applied electric field observed using a scanning nonlinear dielectric microscopy

Takeshi Morita and Yasuo Cho

Appl. Phys. Lett. 84, 257 (2004); http://dx.doi.org/10.1063/1.1637938 (3 pages) | Cited 23 times

Online Publication Date: 7 January 2004

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Ultrahigh-density storage devices consisting of poling reversed nanodots are examined using a scanning nonlinear dielectric microscope (SNDM). By using the SNDM, real-time observation of the poling direction was attempted and an unexpected phenomenon was discovered. For lithium tantalite films thicker than 350 nm, poling directions were aligned anti-parallel to the poling electric field. The critical thickness is thought to be dependent on the material properties, the probe radius, the applied voltage and the pulse duration. This anti-parallel poling phenomenon disagrees with previous poling reversal mechanisms from the conventional plate capacitor model. At present, the reason for and details of anti-parallel poling reversal are unclear, but may be related to the concentrated electric field near the cantilever. © 2004 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.-e Ferroelectricity and antiferroelectricity
85.50.Gk Non-volatile ferroelectric memories
77.22.Ej Polarization and depolarization

Complex admittance analysis for La2Hf2O7/SiO2 high-κ dielectric stacks

G. Apostolopoulos, G. Vellianitis, A. Dimoulas, J. C. Hooker, and T. Conard

Appl. Phys. Lett. 84, 260 (2004); http://dx.doi.org/10.1063/1.1639942 (3 pages) | Cited 46 times

Online Publication Date: 7 January 2004

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A method of analyzing the complex admittance of metal-insulator-semiconductor (MIS) structures has been developed with the aim to extract the density and capture cross section of interface traps from combined ac capacitance–voltage and conductance–voltage measurements at different frequencies. The procedure is applied to study dielectric stacks based on La2Hf2O7 high-κ dielectric, which could be considered as a SiO2 replacement for future transistors. © 2004 American Institute of Physics.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.22.Ch Permittivity (dielectric function)
72.80.Sk Insulators
84.37.+q Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)
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