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12 Jan 2004

Volume 84, Issue 2, pp. 161-308

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Appl. Phys. Lett. 84, 161 (2004); http://dx.doi.org/10.1063/1.1639505 (3 pages)

Hatice Altug and Jelena Vučković
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Correlation of charge transport to intrinsic strain in silicon oxynitride and Si-rich silicon nitride thin films

S. Habermehl and R. T. Apodaca

Appl. Phys. Lett. 84, 215 (2004); http://dx.doi.org/10.1063/1.1639132 (3 pages) | Cited 8 times

Online Publication Date: 7 January 2004

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Poole–Frenkel emission in Si-rich nitride and silicon oxynitride thin films is studied in conjunction with compositional aspects of their elastic properties. For Si-rich nitrides varying in composition from SiN1.33 to SiN0.54, the Poole–Frenkel trap depth (ΦB) decreases from 1.08 to 0.52 eV as the intrinsic film strain (ϵi) decreases from 0.0036 to −0.0016. For oxynitrides varying in composition from SiN1.33 to SiO1.49N0.35, ΦB increases from 1.08 to 1.53 eV as ϵi decreases from 0.0036 to 0.0006. In both material systems, a direct correlation is observed between ΦB and ϵi. Compositionally induced strain relief as a mechanism for regulating ΦB is discussed. © 2004 American Institute of Physics.
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72.20.Ht High-field and nonlinear effects
68.60.Bs Mechanical and acoustical properties
73.61.Ng Insulators
61.66.Bi Elemental solids
61.66.Dk Alloys

Transparent conducting Sb-doped SnO2 thin films grown by pulsed-laser deposition

H. Kim and A. Piqué

Appl. Phys. Lett. 84, 218 (2004); http://dx.doi.org/10.1063/1.1639515 (3 pages) | Cited 41 times

Online Publication Date: 7 January 2004

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Antimony-doped tin oxide (SnO2:Sb) thin films (100–480 nm thick) have been deposited by pulsed-laser deposition on glass substrates without a postdeposition anneal. The structural, electrical, and optical properties of these films have been investigated as a function of doping amount, substrate temperature, and oxygen partial pressure during deposition. Films were deposited at temperatures ranging from 25 to 600 °C in O2 partial pressures ranging from 10 to 100 mTorr. The films (300 nm thick) deposited at 300 °C in 45 mTorr of oxygen show electrical resistivities as low as 9.8×10−4 Ω cm, an average visible transmittance of 90%, a refractive index of 1.98 (at 550 nm), and an optical band gap of 4.21 eV.
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81.15.Fg Pulsed laser ablation deposition
78.66.Nk Insulators
72.80.Sk Insulators
68.55.-a Thin film structure and morphology

Metal/semiconductor superlattices containing semimetallic ErSb nanoparticles in GaSb

M. P. Hanson, D. C. Driscoll, C. Kadow, and A. C. Gossard

Appl. Phys. Lett. 84, 221 (2004); http://dx.doi.org/10.1063/1.1639932 (3 pages) | Cited 7 times

Online Publication Date: 7 January 2004

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We demonstrate the growth by molecular beam epitaxy of a metal/semiconductor composite consisting of epitaxial semimetallic ErSb particles in a GaSb matrix. The ErSb nucleates in an island growth mode leading to the spontaneous formation of nanometer-sized particles. These particles are found to preferentially grow along a [011] direction on a (100) GaSb surface. The particles can be overgrown with GaSb to form an epitaxial superlattice consisting of ErSb particles between GaSb spacer layers. The size of the ErSb particles increases monotonically with the deposition. The carrier concentrations in the superlattices are found to be dependent on both the size and density of the ErSb particles. Smaller particles and closer layer spacings reduce the hole concentration in the film. © 2004 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.40.Ns Metal-nonmetal contacts
68.65.Cd Superlattices
61.46.-w Structure of nanoscale materials

Tungsten inverse opals: The influence of absorption on the photonic band structure in the visible spectral region

Georg von Freymann, Sajeev John, Martin Schulz-Dobrick, Evangellos Vekris, Nicolas Tétreault, Sean Wong, Vladimir Kitaev, and Geoffrey A. Ozin

Appl. Phys. Lett. 84, 224 (2004); http://dx.doi.org/10.1063/1.1639941 (3 pages) | Cited 29 times

Online Publication Date: 7 January 2004

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We report on the fabrication and characterization of tungsten inverse opals for the visible and near-infrared spectral region. The crucial influence of the strong absorption in this spectral region is experimentally investigated by means of a gradient deposition technique and characterization with reflectance and transmittance spectroscopy. With increasing metal infiltration, we observe the breakdown of the photonic band structure, resulting first in a sphere-cavity-like behavior and finally in a behavior similar to that of a periodically structured metal surface. © 2004 American Institute of Physics.
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78.40.Kc Metals, semimetals, and alloys
78.30.Er Solid metals and alloys
78.20.-e Optical properties of bulk materials and thin films
42.70.Qs Photonic bandgap materials
42.86.+b Optical workshop techniques

Cross-sectional scanning tunneling microscopy and spectroscopy of InGaP/GaAs heterojunctions

Y. Dong, R. M. Feenstra, M. P. Semtsiv, and W. T. Masselink

Appl. Phys. Lett. 84, 227 (2004); http://dx.doi.org/10.1063/1.1638637 (3 pages) | Cited 10 times

Online Publication Date: 7 January 2004

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Compositionally abrupt InGaP/GaAs heterojunctions grown by gas-source molecular-beam epitaxy have been investigated by cross-sectional scanning tunneling microscopy and spectroscopy. Images inside the InGaP layer show nonuniform In and Ga distribution. About 1.5 nm of transition region at the interfaces is observed, with indium carryover identified at the GaAs–on–InGaP interface. Spatially resolved tunneling spectra with nanometer spacing across the interface were acquired, from which band offsets (revealing that nearly all of band offset occurs in the valence band) were determined. © 2004 American Institute of Physics.
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68.35.Dv Composition, segregation; defects and impurities
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.35.Fx Diffusion; interface formation
73.20.-r Electron states at surfaces and interfaces
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
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