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12 Jan 2004

Volume 84, Issue 2, pp. 161-308

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Appl. Phys. Lett. 84, 161 (2004); http://dx.doi.org/10.1063/1.1639505 (3 pages)

Hatice Altug and Jelena Vučković
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Publisher’s Note: “Stress-induced effects on depletion-layer capacitance of metal–oxide–semiconductor capacitors” [Appl. Phys. Lett. 83, 4351 (2003)]

Kazunori Matsuda and Yozo Kanda

Appl. Phys. Lett. 84, 308 (2004); http://dx.doi.org/10.1063/1.1643096 (1 page) | Cited 1 time

Online Publication Date: 7 January 2004

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Abstract Unavailable
Show PACS
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
84.32.Tt Capacitors
85.30.Tv Field effect devices
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
99.10.Fg Publisher's note
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