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12 Jan 2004

Volume 84, Issue 2, pp. 161-308

Issue Cover Spotlight Figure

Appl. Phys. Lett. 84, 161 (2004); http://dx.doi.org/10.1063/1.1639505 (3 pages)

Hatice Altug and Jelena Vučković
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Microcavity-coupled optical Stark effect: Application to ultrafast all-optical modulation

S. Sanchez, C. De Matos, and M. Pugnet

Appl. Phys. Lett. 84, 191 (2004); http://dx.doi.org/10.1063/1.1639134 (3 pages) | Cited 3 times

Online Publication Date: 7 January 2004

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We propose a modeling of the microcavity-coupled optical Stark effect that we compare to degenerate pump-probe experimental results obtained at room temperature on a bulk GaAs microcavity. The cavity energy mode is adjusted 15 meV below the edge of the GaAs bandgap. With a pump intensity as low as 0.4 MW/cm2, we could demonstrate an instantaneous reflectivity modulation with a 5:1 contrast ratio. The good agreement between experiment and modeling is promising to design structures well suited to all-optical modulation with low switching intensities. © 2004 American Institute of Physics.
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42.55.Sa Microcavity and microdisk lasers
78.66.Hf II-VI semiconductors

An angle modulation reflectance spectroscopy characterization of a GaAs/GaAlAs asymmetric microcavity structure

D. Y. Lin

Appl. Phys. Lett. 84, 194 (2004); http://dx.doi.org/10.1063/1.1639938 (3 pages)

Online Publication Date: 7 January 2004

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A GaAs/GaAlAs-based asymmetric microcavity structure was studied by an angle modulation reflectance (AMR) and reflectivity measurements at different angles of incidence (θinc) ranging from 10° to 65°. The AMR technique possesses the enhanced capability of showing only the angle-dependent cavity mode (CM) feature and interference features related to the properties of the distributed Bragg reflectors (DBRs). By comparison of the AMR spectra and the numerical first derivative (with respect to energy) of the R spectra, the relative strength and positions of the 1C–1H and 1C–1L excitonic transitions can be extracted through a careful line-shape fit. The resonance enhancement between the CM and excitonic transitions are also discussed. © 2004 American Institute of Physics.
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78.66.Fd III-V semiconductors
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
73.20.At Surface states, band structure, electron density of states

Narrow, deep level cathodoluminescence emission from semi-insulating GaAs

J. K. Radhakrishnan and G. Salviati

Appl. Phys. Lett. 84, 197 (2004); http://dx.doi.org/10.1063/1.1640471 (3 pages)

Online Publication Date: 7 January 2004

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Cathodoluminescence investigations on bulk undoped semi-insulating GaAs samples taken from different sources reveal the presence of a deep level emission at 0.9 eV at 77 K, with a narrow full width at half maximum of 8 meV. The temperature-dependent and beam-parameter-dependent studies indicate that, the probable origin for this emission may be some nanocluster/quantum-dot like structures with a band gap of 0.9 eV, present inside the semi-insulating GaAs crystal lattice. One possibility for such structures in semi-insulating GaAs are clusters/nanoprecipitates of arsenic. © 2004 American Institute of Physics.
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78.60.Hk Cathodoluminescence, ionoluminescence
71.20.Nr Semiconductor compounds
71.55.Eq III-V semiconductors

Infrared dielectric function and vibrational modes of pentacene thin films

M. Schubert, C. Bundesmann, G. Jacopic, H. Maresch, and H. Arwin

Appl. Phys. Lett. 84, 200 (2004); http://dx.doi.org/10.1063/1.1639129 (3 pages) | Cited 8 times

Online Publication Date: 7 January 2004

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Generalized infrared spectroscopic ellipsometry over the wave-number range from 300 to 2000 cm−1 is used for precise determination of the dielectric function, frequency, amplitude, and broadening parameters of 27 infrared active modes for polarization parallel to the growth surface of pentacene thin films obtained by molecular-beam deposition on glass. No in-plane anisotropy was detected, which is indicative for a random orientation of crystallites around the growth direction supporting previous x-ray diffraction results. © 2004 American Institute of Physics.
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77.22.Ch Permittivity (dielectric function)
78.30.Jw Organic compounds, polymers
68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.66.Qn Polymers; organic compounds
77.22.Ej Polarization and depolarization

Morphology and composition of highly strained InGaAs and InGaAsN layers grown on GaAs substrate

G. Patriarche, L. Largeau, J.-C. Harmand, and D. Gollub

Appl. Phys. Lett. 84, 203 (2004); http://dx.doi.org/10.1063/1.1639510 (3 pages) | Cited 38 times

Online Publication Date: 7 January 2004

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We have studied the morphology and the composition of highly strained InGaAs and InGaAsN quantum wells (QWs) by transmission electron microscopy. 002 dark-field images show that two symmetrical interfacial layers of about 1.5 nm border the QWs. The selected-area electron diffraction technique gives further evidence of these layers since two extra spots are always observed near the high-index spots on the diffraction patterns. From the position of these extra spots, we determine the strain of the interfacial layers as well as the strain of the middle part of the wells. The comparison of InGaAs and InGaAsN reveals that the morphology of the quaternary alloy QWs is deteriorated and its lateral fluctuation of composition is increased. © 2004 American Institute of Physics.
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85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
81.07.St Quantum wells

GaN quantum dots doped with Eu

Y. Hori, X. Biquard, E. Monroy, D. Jalabert, F. Enjalbert, Le Si Dang, M. Tanaka, O. Oda, and B. Daudin

Appl. Phys. Lett. 84, 206 (2004); http://dx.doi.org/10.1063/1.1637157 (3 pages) | Cited 29 times

Online Publication Date: 7 January 2004

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Molecular-beam-epitaxy growth of Eu-doped GaN quantum dots embedded in AlN has been achieved. The crucial issue of Eu location has been addressed by extended x-ray absorption fine structure measurements. By comparing the signature of the Eu short-range environment for several samples, it is concluded that Eu is mostly incorporated in GaN dots. Intense cathodoluminescence associated with Eu has been measured, with no GaN bandedge emission, evidence that carrier recombination mostly occurs through rare-earth ion excitation. Persistent photoluminescence of Eu-doped GaN quantum dots as a function of the temperature is suggested to be further confirmation of the recombination of confined carriers through Eu ion excitation. © 2004 American Institute of Physics.
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68.65.Hb Quantum dots (patterned in quantum wells)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.07.Ta Quantum dots
61.72.uj III-V and II-VI semiconductors
78.67.Hc Quantum dots
78.70.Dm X-ray absorption spectra
78.60.Hk Cathodoluminescence, ionoluminescence
78.55.Cr III-V semiconductors

Diffusion phenomena in a Pt/IrO2/Ir/TiN/W multilayer structure during annealing in oxygen

A. Alberti, A. M. Borzì, and S. Ravesi

Appl. Phys. Lett. 84, 209 (2004); http://dx.doi.org/10.1063/1.1638899 (3 pages)

Online Publication Date: 7 January 2004

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The process generating hillock structures at the surface of a Pt/IrO2/Ir/TiN/W multilayer stack has been studied at a temperature of 700 °C. This phenomenon has been related to a structural modification of the barrier that involves iridium and platinum layers, and consists of platinum atoms diffusing downwards while iridium atoms move upwards. Once in the surface proximity, iridium has been oxidized forming large grains, the hillocks, that have grown and protruded up to the sample surface. Nevertheless, oxygen was not able to deeply penetrate the barrier stack, and therefore, the inner TiN and W layers have been preserved from oxidation. © 2004 American Institute of Physics.
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68.65.Ac Multilayers
66.30.Ny Chemical interdiffusion; diffusion barriers

Spectroscopic observation of oxidation process in InN

E. Kurimoto, M. Hangyo, H. Harima, M. Yoshimoto, T. Yamaguchi, T. Araki, Y. Nanishi, and K. Kisoda

Appl. Phys. Lett. 84, 212 (2004); http://dx.doi.org/10.1063/1.1639511 (3 pages) | Cited 28 times

Online Publication Date: 7 January 2004

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Spectroscopic observations of high-quality wurtzite InN have shown that oxygen is easily incorporated in the crystal by thermal treatments in the air. Incorporation of oxygen may play a key role in determining the apparent properties of InN including the bandgap and the lattice constant. It is shown that Raman scattering is a sensitive tool to probe the oxygen incorporation process and associated deterioration in crystallinity. © 2004 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.65.Mq Oxidation
81.40.Gh Other heat and thermomechanical treatments
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