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2 Feb 2004

Volume 84, Issue 5, pp. 645-830

Issue Cover Spotlight Figure

Appl. Phys. Lett. 84, 810 (2004); http://dx.doi.org/10.1063/1.1644924 (3 pages)

Hendrik F. Hamann, Yves C. Martin, and H. Kumar Wickramasinghe
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Isolated nickel impurities in diamond: A microscopic model for the electrically active centers

R. Larico, L. V. C. Assali, W. V. M. Machado, and J. F. Justo

Appl. Phys. Lett. 84, 720 (2004); http://dx.doi.org/10.1063/1.1645327 (3 pages) | Cited 9 times

Online Publication Date: 27 January 2004

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We present a theoretical investigation on the structural and electronic properties of isolated nickel impurities in diamond. The atomic structures, symmetries, formation and transition energies, and hyperfine parameters of isolated interstitial and substitutional Ni were computed using ab initio total energy methods. Based on our results, we ultimately propose a consistent microscopic model which explains several experimentally identified nickel-related active centers in diamond. © 2004 American Institute of Physics.
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61.72.up Other materials
71.15.Nc Total energy and cohesive energy calculations
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
71.20.Mq Elemental semiconductors
61.50.Ah Theory of crystal structure, crystal symmetry; calculations and modeling
71.55.Cn Elemental semiconductors
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Wall roughness effects on an electron bunch

S. Banna, D. Schieber, and L. Schächter

Appl. Phys. Lett. 84, 723 (2004); http://dx.doi.org/10.1063/1.1644031 (3 pages) | Cited 2 times

Online Publication Date: 27 January 2004

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The effect of the surface roughness on a moving electron bunch is considered by resorting to a model of a metallic structure with random perturbations on its surface. Based upon this model, analytic expressions have been derived for the average energy emitted per groove (EPG) and for its standard deviation. For a relativistic bunch, both quantities are shown to be virtually independent of the momentum. Moreover, it has been found that the standard deviation of the EPG is proportional to that of the roughness parameter to the power of 1/4. © 2004 American Institute of Physics.
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41.75.Ht Relativistic electron and positron beams
29.20.-c Accelerators

Measurement of the band offsets between amorphous LaAlO3 and silicon

L. F. Edge, D. G. Schlom, S. A. Chambers, E. Cicerrella, J. L. Freeouf, B. Holländer, and J. Schubert

Appl. Phys. Lett. 84, 726 (2004); http://dx.doi.org/10.1063/1.1644055 (3 pages) | Cited 78 times

Online Publication Date: 27 January 2004

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The conduction and valence band offsets between amorphous LaAlO3 and silicon have been determined from x-ray photoelectron spectroscopy measurements. These films, which are free of interfacial SiO2, were made by molecular-beam deposition. The band line-up is type I with measured band offsets of 1.8±0.2 eV for electrons and 3.2±0.1 eV for holes. The band offsets are independent of the doping concentration in the silicon substrate as well as the amorphous LaAlO3 film thickness. These amorphous LaAlO3 films have a bandgap of 6.2±0.1 eV. © 2004 American Institute of Physics.
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73.20.At Surface states, band structure, electron density of states
79.60.Dp Adsorbed layers and thin films
71.23.Cq Amorphous semiconductors, metallic glasses, glasses

Lock-in thermography and nonuniformity modeling of thin-film CdTe solar cells

Diana Shvydka, J. P. Rakotoniaina, and O. Breitenstein

Appl. Phys. Lett. 84, 729 (2004); http://dx.doi.org/10.1063/1.1645322 (3 pages) | Cited 7 times

Online Publication Date: 27 January 2004

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We present the lock-in thermography study of thin-film CdTe/CdS solar cells. Several major features of thermal signal are identified, such as much higher intensity for cells under illumination, considerable inhomogeneity, and a bright contour line corresponding to the higher intensity at the cell edge. Light soak stress is shown to increase the device lateral nonuniformity. We model the solar cell as a two-dimensional system of random diodes connected in parallel through a resistive electrode. The simulated current distribution maps are consistent with the thermography data. © 2004 American Institute of Physics.
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84.60.Jt Photoelectric conversion

Low temperature InP/Si wafer bonding

Q.-Y. Tong, Q. Gan, G. Hudson, G. Fountain, and P. Enquist

Appl. Phys. Lett. 84, 732 (2004); http://dx.doi.org/10.1063/1.1644615 (3 pages) | Cited 15 times

Online Publication Date: 27 January 2004

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An oxide-free, covalently bonded interface of InP/silicon wafer pairs has been realized at low temperature by B2H6 plasma treatment of bonding surfaces in the reactive ion etch mode followed by a HF dip and room temperature bonding in air. The bonding energy reaches InP fracture surface energy of 630 mJ/m2 at 200 °C. A total B-doped amorphous layer of about 15 Å with peak concentration of ∼ 2×1020 cm−3 was detected at the bonding interface. The release of hydrogen at low temperature from B–H complexes and subsequent absorption of the atomic hydrogen by the amorphous layer at the bonding interface is most likely responsible for the enhanced bonding energy. © 2004 American Institute of Physics.
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68.35.Md Surface thermodynamics, surface energies
81.65.Cf Surface cleaning, etching, patterning
81.05.Ea III-V semiconductors
81.05.Cy Elemental semiconductors
81.40.Gh Other heat and thermomechanical treatments
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)

Effect of quantum confinement on shallow acceptor transitions in δ-doped GaAs/AlAs multiple-quantum wells

W. M. Zheng, M. P. Halsall, P. Harmer, P. Harrison, and M. J. Steer

Appl. Phys. Lett. 84, 735 (2004); http://dx.doi.org/10.1063/1.1644912 (3 pages) | Cited 7 times

Online Publication Date: 27 January 2004

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We have investigated the effect of confinement on the shallow acceptor transitions in δ-doped GaAs/AlAs multiple-quantum wells with well widths ranging from 30 to 200 Å. A series of Be δ-doped GaAs/AlAs multiple-quantum wells with doping at the well center and a single epilayer of GaAs uniformly Be doped were grown by molecular beam epitaxy. Photoluminescence spectra were measured at 4, 20, 40, 80, 120, and 200 K, respectively. Two-hole transitions of the acceptor-bound exciton from the ground state, 1S3/2(Γ6), to the excited state, 2S3/2(Γ6), were clearly observed. It is found that the acceptor transition energy increases with a decrease in quantum well width. © 2004 American Institute of Physics.
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73.21.Fg Quantum wells
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
78.67.De Quantum wells
78.55.Cr III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.72.uj III-V and II-VI semiconductors

Optically detected heavy- and light-hole anti-crossing in GaAs quantum wells under pulsed magnetic fields

Yongmin Kim, Kyu-Seok Lee, and C. H. Perry

Appl. Phys. Lett. 84, 738 (2004); http://dx.doi.org/10.1063/1.1645311 (3 pages) | Cited 3 times

Online Publication Date: 27 January 2004

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We report magneto-photoluminescence studies of two undoped GaAs–Al0.3Ga0.7As single quantum well (SQW) samples (120 and 60 Å) in pulsed magnetic fields up to ∼ 65 T. Both samples exhibit exciton transitions due to the ground-state (1s) electron-heavy-hole recombination which undergoes diamagnetic energy shifts at low fields and has a liner dependence at high fields. The 120 Å SQW shows the electron-light-hole exciton transition at zero magnetic field. However at about 30 T, the electron-heavy-hole and the electron-light-hole transitions intersect and show an anti-crossing behavior. The 60 Å SQW shows a similar behavior but the splitting between the heavy- and light-hole excitons can only be observed in the anti-crossing region at about 35 T. The results indicate that the valence band mixing plays a significant role at high magnetic fields. © 2004 American Institute of Physics.
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78.67.De Quantum wells
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
71.35.Ji Excitons in magnetic fields; magnetoexcitons
78.20.Ls Magneto-optical effects

A 50-nm-gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect transistor

Moongyu Jang, Yarkyeon Kim, Jaeheon Shin, Seongjae Lee, and Kyoungwan Park

Appl. Phys. Lett. 84, 741 (2004); http://dx.doi.org/10.1063/1.1645665 (3 pages) | Cited 43 times

Online Publication Date: 27 January 2004

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The theoretical and experimental current–voltage characteristics of 50-nm-gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect transistors (SB-MOSFETs) are discussed. The manufactured 50-nm-gate-length n-type SB-MOSFET shows large on/off current ratio with low leakage current less than 10−4 μA/μm. The saturation current is 120 μA/μm when drain and gate voltage is 1 and 3 V, respectively. The experimental current–voltage characteristics of 50-nm-gate-length n-type SB-MOSFET are fitted using newly developed theoretical model. From the theoretical analysis, the off- and on-current is mainly attributed to the thermionic and tunneling current, respectively. The decrease of tunneling distance at silicon/silicide Schottky junction with the increase of drain voltage gives the increase of tunneling current. This phenomenon is explained by using drain-induced Schottky barrier thickness thinning effect. © 2004 American Institute of Physics.
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85.30.Tv Field effect devices
73.40.Gk Tunneling
73.30.+y Surface double layers, Schottky barriers, and work functions

Role of osmium in the electrical transport mechanism of polycrystalline tin oxide thin films

A. Forleo, S. Capone, M. Epifani, P. Siciliano, and R. Rella

Appl. Phys. Lett. 84, 744 (2004); http://dx.doi.org/10.1063/1.1643536 (3 pages) | Cited 7 times

Online Publication Date: 27 January 2004

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Undoped and Os-doped SnO2 thin films have been deposited by the sol–gel method. Their electrical properties have been investigated by resistivity and Hall effect measurements in order to understand the role of Os in the electrical transport mechanism. The measurements have been carried out in 100–500 K temperature range both in a vacuum and in air. The experimental results have been analyzed according to the grain-boundary scattering mechanism and they have been used to explain the response toward CH4 of the Os-doped SnO2 thin-film-based gas sensors. © 2004 American Institute of Physics.
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73.61.Le Other inorganic semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
72.80.Jc Other crystalline inorganic semiconductors
61.72.up Other materials
61.72.Mm Grain and twin boundaries
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
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Enhanced weak Anderson localization phenomena in the magnetoresistance of n-type (Ga,In)(N,As)

J. Teubert, P. J. Klar, W. Heimbrodt, K. Volz, W. Stolz, P. Thomas, G. Leibiger, and V. Gottschalch

Appl. Phys. Lett. 84, 747 (2004); http://dx.doi.org/10.1063/1.1642760 (3 pages) | Cited 15 times

Online Publication Date: 27 January 2004

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Ga1−yInyNxAs1−x with doping densities between 1017 and 1019 cm−3 was grown lattice matched on (100) GaAs by metalorganic vapor-phase epitaxy. Si or Te and Zn served as donors and acceptors, respectively. The magnetoresistance (MR) was measured between 1.6 and 280 K in magnetic fields up to 10 T. The MR of p-type Ga1−yInyNxAs1−x is typical for highly doped III–V semiconductors showing parabolic behavior at all temperatures with a small negative contribution due to weak localization at low fields and low temperatures. In contrast, n-type Ga1−yInyNxAs1−x exhibits a much stronger negative contribution to the MR. For some samples this negative contribution persists up to 280 K and Hmin>10 T. The N-induced conduction band structure changes lead to a strong enhancement of weak localization effects in the electron transport of Ga1−yInyNxAs1−x. © 2004 American Institute of Physics.
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72.20.My Galvanomagnetic and other magnetotransport effects
73.20.Fz Weak or Anderson localization
73.61.Ey III-V semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
71.55.Eq III-V semiconductors

Colossal magnetoresistive manganite-based ferroelectric field-effect transistor on Si

T. Zhao, S. B. Ogale, S. R. Shinde, R. Ramesh, R. Droopad, J. Yu, K. Eisenbeiser, and J. Misewich

Appl. Phys. Lett. 84, 750 (2004); http://dx.doi.org/10.1063/1.1644321 (3 pages) | Cited 39 times

Online Publication Date: 27 January 2004

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An all-perovskite ferroelectric field-effect transistor with a ferroelectric Pb(Zr0.2Ti0.8)O3 (PZT) gate and a colossal magnetoresistive La0.8Ca0.2MnO3 (LCMO) channel has been successfully fabricated by pulsed-laser deposition on Si. A clear and square channel resistivity hysteresis loop, commensurate with the ferroelectric hysteresis loop of PZT, is observed. A maximum modulation of 20% after an electric field poling of 1.5×105 V/cm, and 50% under a magnetic field of 1 T, are achieved near the metal-insulator transition temperature of the LCMO channel. A data retention time of at least one day is measured. The effects of electric and magnetic fields on the LCMO channel resistance are discussed within the framework of phase separation scenario. © 2004 American Institute of Physics.
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75.47.Gk Colossal magnetoresistance
77.80.Dj Domain structure; hysteresis
85.30.Tv Field effect devices
81.15.Fg Pulsed laser ablation deposition
64.75.-g Phase equilibria

On factors inducing the (10math0) texture of hexagonal-close-packed Co63Cr31Mn6 layers in magnetic recording media

Hajung Song, Soon-Ju Kwon, and Kyung-Ho Shin

Appl. Phys. Lett. 84, 753 (2004); http://dx.doi.org/10.1063/1.1644908 (3 pages)

Online Publication Date: 27 January 2004

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We investigate factors affecting the movement of sputtered species and the (10math0) texture formation of hexagonal-close-packed Co63Cr31Mn6 (CoCrMn) layers in magnetic recording media. Deposition conditions and underlayers rendering high mobility of the sputtered species promote the (10math0) texture of the CoCrMn film. Elemental effects are studied by substituting manganese with a series of 3d transition elements (Ti, V, Cr, Fe, Ni, and Cu) in the CoCrMn films. The results suggest that the chemical characteristics of manganese, the preference of bonding with different elements (especially with cobalt), is important in the texture formation of CoCrMn films. © 2004 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Cd Deposition by sputtering
75.50.Ss Magnetic recording materials
75.70.Ak Magnetic properties of monolayers and thin films
68.49.Uv X-ray standing waves

Magnetic properties of Mn doped ZnO tetrapod structures

V. A. L. Roy, A. B. Djurišić, H. Liu, X. X. Zhang, Y. H. Leung, M. H. Xie, J. Gao, H. F. Lui, and C. Surya

Appl. Phys. Lett. 84, 756 (2004); http://dx.doi.org/10.1063/1.1645312 (3 pages) | Cited 81 times

Online Publication Date: 27 January 2004

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ZnO tetrapod nanostructures were prepared by evaporating Zn metal under humid argon flow. After the fabrication, Mn diffusion doping was performed at two different temperatures (600 and 800 °C). The samples were characterized by scanning electron microscopy, transmission electron microscopy, x-ray fluorescence, x-ray diffraction (XRD), superconducting quantum interference device magnetometer, and photoluminescence. Diffusion doping resulted in the increase of the size of tetrapods, but no new peaks were found in XRD spectrum. Mn doped ZnO tetrapod structures were found to be ferromagnetic with Curie temperature ∼50 K, and showed large coercive field (∼3500 Oe for 800 °C sample, ∼5500 Oe for 600 °C sample). © 2004 American Institute of Physics.
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75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.50.Pp Magnetic semiconductors
75.50.Dd Nonmetallic ferromagnetic materials
61.46.-w Structure of nanoscale materials
66.30.Pa Diffusion in nanoscale solids
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
66.30.Ny Chemical interdiffusion; diffusion barriers
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
78.55.Et II-VI semiconductors
61.72.uj III-V and II-VI semiconductors

Systematic study of the magnetization reversal in patterned Co and NiFe Nanolines

W. Casey Uhlig and Jing Shi

Appl. Phys. Lett. 84, 759 (2004); http://dx.doi.org/10.1063/1.1645332 (3 pages) | Cited 34 times

Online Publication Date: 27 January 2004

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We report a universal dependence of switching field of patterned magnetic nanolines as a function of the linewidth for Co and NiFe films of various thicknesses. This dependence is shown to be consistent with a nucleation picture in which the magnetization reversal is controlled only by a small nucleus equivalent to a particle with an aspect ratio of 1.25, which spreads across the width of the nanoline. Micromagnetic simulation, taking into account of the edge roughness, agrees well with the observed results. © 2004 American Institute of Physics.
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75.60.Jk Magnetization reversal mechanisms
75.70.Ak Magnetic properties of monolayers and thin films
75.25.-j Spin arrangements in magnetically ordered materials (including neutron and spin-polarized electron studies, synchrotron-source x-ray scattering, etc.)
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

Uniaxial magnetic anisotropy tuned by nanoscale ripple formation: Ion-sculpting of Co/Cu(001) thin films

D. Sekiba, R. Moroni, G. Gonella, F. Buatier de Mongeot, C. Boragno, L. Mattera, and U. Valbusa

Appl. Phys. Lett. 84, 762 (2004); http://dx.doi.org/10.1063/1.1645317 (3 pages) | Cited 23 times

Online Publication Date: 27 January 2004

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We have investigated the growth of surface nanostructures on a Co/Cu(001) film and the growth of Co films on a nanostructured Cu(001) substrate as well as the effect of nanoscale pattern formation on the film magnetic properties. Here we demonstrate by scanning tunneling microscopy measurements and magneto-optic Kerr effect hysteresis curves that low-temperature grazing-incidence ion sputtering can be used to induce the formation of nanoscale ripples which reduce the four-fold symmetry of the Co film to two-fold, thus generating a strong in-plane uniaxial magnetic anisotropy. The nanostructures and the associated uniaxial magnetic anisotropy were found to be stable up to room temperature. © 2004 American Institute of Physics.
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75.50.Cc Other ferromagnetic metals and alloys
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.30.Gw Magnetic anisotropy
78.20.Ls Magneto-optical effects
81.15.Cd Deposition by sputtering
75.70.Ak Magnetic properties of monolayers and thin films
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
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Improved dielectric properties and tunability of multilayered thin films of (Ba0.80Sr0.20)(Ti1−xZrx)O3 with compositionally graded layer

Can Wang, B. L. Cheng, S. Y. Wang, H. B. Lu, Y. L. Zhou, Z. H. Chen, and G. Z. Yang

Appl. Phys. Lett. 84, 765 (2004); http://dx.doi.org/10.1063/1.1645331 (3 pages) | Cited 30 times

Online Publication Date: 27 January 2004

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Multilayered thin films of (Ba0.80Sr0.20)(Ti1−xZrx)O3 (BSTZ) with compositionally graded layer (CGL) have been fabricated by pulsed laser deposition on Pt/TiO2/SiO2/Si substrate. In each CGL, four individual layers of BSTZ with x = 0.36, 0.18, 0.08 and 0 are grown in series with equal thickness. Three kinds of thin-film CGL samples comprising one, two or four CGLs have been elaborated with the final same thickness, and the thickness of each CGL is accordingly varied in different samples to achieve the gradients of composition. The crystalline structures of the CGL thin films are successively characterized using x-ray diffraction and their electrical properties such as ac dielectric properties and polarizations are investigated. Improved dielectric properties and tunability of permittivity have been observed in the multilayered CGL films compared to single-layer BSTZ films prepared in the identical condition. Furthermore, with increasing gradients of compositions in the CGL multilayered films, the dielectric permittivity and its tunability increase, and the hysteresis loop of the thin films disappears. The results show that the internal stress produced by the gradient of composition could be a dominant factor to influence the dielectric properties. The improved dielectric properties and tunability for the applications of tunable devices can be obtained by the manipulation of the gradient of compositions in the multilayered films. © 2004 American Institute of Physics.
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77.80.Dj Domain structure; hysteresis
77.55.-g Dielectric thin films
81.15.Fg Pulsed laser ablation deposition
77.22.Ej Polarization and depolarization
77.22.Ch Permittivity (dielectric function)

Role of soft dielectric energy in poling crystals or ceramics and in domain average engineering

M. Marvan, J. Erhart, and J. Fousek

Appl. Phys. Lett. 84, 768 (2004); http://dx.doi.org/10.1063/1.1645659 (3 pages) | Cited 1 time

Online Publication Date: 27 January 2004

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Poling process is essential for ferroelectric ceramics and crystals. It is traditionally assumed that the one of PS vectors allowed by symmetry is energetically preferred which is closest to the direction of applied field. It is shown that because of the role of the soft energy this may not be the case. Theoretical results for crystals and ceramics of the mmathm→4mm species show that regions of field directions, which induce PS of a given orientation, depend on the field magnitude. In crystals the situation can even arise when spontaneous polarization is directed against the field. Experiments could demonstrate practical consequences of this theory. © 2004 American Institute of Physics.
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77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization

Low temperature deposited Ba0.96Ca0.04Ti0.84Zr0.16O3 thin films on Pt electrodes by radio frequency magnetron sputtering

N. Cramer, Elliot Philofsky, Lee Kammerdiner, and T. S. Kalkur

Appl. Phys. Lett. 84, 771 (2004); http://dx.doi.org/10.1063/1.1645313 (3 pages) | Cited 12 times

Online Publication Date: 27 January 2004

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Ba0.96Ca0.04Ti0.84Zr0.16O3 films acceptor doped with Sc were deposited on Pt/TiO2/SiO2/Si substrates using radio frequency magnetron sputtering. Substrate temperatures throughout the fabrication process remained at or below 450 °C, which allows this process to be compatible with many materials commonly used in integrated circuit manufacturing. In addition, this process made no use of oxygen in the sputter gas or in annealing atmospheres and thus it remains compatible with easily oxidized materials. A relative dielectric constant of 166 was achieved along with a loss tangent of 1.9% at 100 kHz. Leakage current densities of 1.6×10−8 A/cm2 were observed at 300 K with 300 kV/cm of applied electric field. © 2004 American Institute of Physics.
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81.15.Cd Deposition by sputtering
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
61.72.up Other materials
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
77.22.Gm Dielectric loss and relaxation
77.22.Ch Permittivity (dielectric function)

Nanoscale domain patterning of lead zirconate titanate materials using electron beams

J. H. Ferris, D. B. Li, S. V. Kalinin, and D. A. Bonnell

Appl. Phys. Lett. 84, 774 (2004); http://dx.doi.org/10.1063/1.1644327 (3 pages) | Cited 6 times

Online Publication Date: 27 January 2004

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The interactions of electron beams (e− beam) with ferroelectric oxides based on lead zirconate titanate have been quantified. The beam energy and dose dependencies of surface charge have been manipulated to influence local polarization orientation. The mechanism of ferroelectric domain polarization of 100 nm grains in lead zirconate titanate is discussed in terms of electron–solid interactions and the relative number of secondary electrons emitted to trapped electrons. Both positive and negative perpendicular polarization can be realized with e− beam exposure. The consequent nanoscale domain patterning is characterized with piezoforce microscopy. © 2004 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
61.82.Ms Insulators
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Lattice-strain-driven ferromagnetic ordering in La0.8Sr0.2MnO3 thin films

Y. P. Lee, S. Y. Park, V. G. Prokhorov, V. A. Komashko, and V. L. Svetchnikov

Appl. Phys. Lett. 84, 777 (2004); http://dx.doi.org/10.1063/1.1645329 (3 pages) | Cited 11 times

Online Publication Date: 27 January 2004

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The effects of lattice strain on the magnetic and the transport properties of La0.8Sr0.2MnO3 films grown on an (001) LaAlO3 substrate and on a La0.8Ca0.2MnO3 layer have been studied. It was observed that the metal-insulator and the ferromagnetic transitions turn out to be at higher temperatures for the film deposited on La0.8Ca0.2MnO3 layer with respect to that on LaAlO3. The dependence of Curie temperature on the bulk and the Jahn–Teller strains has also been determined. © 2004 American Institute of Physics.
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75.70.Ak Magnetic properties of monolayers and thin films
75.47.Lx Magnetic oxides
75.50.Dd Nonmetallic ferromagnetic materials
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
71.30.+h Metal-insulator transitions and other electronic transitions

GaInP2 overgrowth and passivation of colloidal InP nanocrystals using metalorganic chemical vapor deposition

M. C. Hanna, O. I. Mićić, M. J. Seong, S. P. Ahrenkiel, J. M. Nedeljković, and A. J. Nozik

Appl. Phys. Lett. 84, 780 (2004); http://dx.doi.org/10.1063/1.1644620 (3 pages) | Cited 5 times

Online Publication Date: 27 January 2004

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We have used metalorganic chemical vapor deposition to deposit thin GaInP2 passivating films on both isolated and close-packed arrays of colloidal InP/GaInP2 core-shell nanocrystals. Conformal GaInP2 layers of 10–20 nm were grown on the nanocrystals after organic capping molecule removal by a thermal annealing treatment. We show that the InP nanocrystals retain their crystallinity, shape and luminescence efficiency after being exposed to growth temperatures of 600 °C. The GaInP2 nanocrystal composite showed strong photoluminescences indicating effective passivation of surface states. In close-packed nanocrystal arrays, the emission band is redshifted compared to films of isolated nanocrystals indicating electron coupling between dots embedded in GaInP2. © 2004 American Institute of Physics.
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78.55.Cr III-V semiconductors
81.05.Ea III-V semiconductors
68.65.Hb Quantum dots (patterned in quantum wells)
78.67.Hc Quantum dots
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.40.Gh Other heat and thermomechanical treatments
82.70.Dd Colloids
78.66.Fd III-V semiconductors
73.20.At Surface states, band structure, electron density of states
81.65.Rv Passivation

Manganese-doped ZnO nanobelts for spintronics

C. Ronning, P. X. Gao, Y. Ding, Z. L. Wang, and D. Schwen

Appl. Phys. Lett. 84, 783 (2004); http://dx.doi.org/10.1063/1.1645319 (3 pages) | Cited 57 times

Online Publication Date: 27 January 2004

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Zinc oxide (ZnO) nanobelts synthesized by thermal evaporation have been ion implanted with 30 keV Mn+ ions. Both transmission electron microscopy and photoluminescence investigations show highly defective material directly after the implantation process. Upon annealing to 800 °C, the implanted Mn remains in the ZnO nanobelts and the matrix recovers both in structure and luminescence. The produced high-quality ZnO:Mn nanobelts are potentially useful for spintronics. © 2004 American Institute of Physics.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
78.55.Et II-VI semiconductors
61.46.-w Structure of nanoscale materials
81.07.Bc Nanocrystalline materials
61.72.Cc Kinetics of defect formation and annealing
61.72.uj III-V and II-VI semiconductors
78.66.Hf II-VI semiconductors
68.37.Lp Transmission electron microscopy (TEM)

Dynamical nonlinearity in strained InGaAs (311)A sidewall quantum wires

Daniele Alderighi, Marian Zamfirescu, Anna Vinattieri, Massimo Gurioli, Stefano Sanguinetti, Michael Povolotskyi, Jerome Gleize, Aldo Di Carlo, Paolo Lugli, and Richard Nötzel

Appl. Phys. Lett. 84, 786 (2004); http://dx.doi.org/10.1063/1.1639504 (3 pages) | Cited 4 times

Online Publication Date: 27 January 2004

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Significant optical nonlinearity has been found in InGaAs (311)A sidewall quantum wires by means of time resolved photoluminescence measurements. A strong reverse quantum confined Stark effect has been observed and attributed to the dynamical screening of both the internal piezoelectric field and the Coulomb interaction between carriers. The time evolution of the quantum wire emission has been reproduced by means of self-consistent calculations that take into account excitonic effects, strain, and induced piezoelectric charges. © 2004 American Institute of Physics.
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85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.50.Hz Strong-field excitation of optical transitions in quantum systems; multiphoton processes; dynamic Stark shift
42.65.Sf Dynamics of nonlinear optical systems; optical instabilities, optical chaos and complexity, and optical spatio-temporal dynamics

Parallel dip-pen nanolithography with arrays of individually addressable cantilevers

David Bullen, Sung-Wook Chung, Xuefeng Wang, Jun Zou, Chad A. Mirkin, and Chang Liu

Appl. Phys. Lett. 84, 789 (2004); http://dx.doi.org/10.1063/1.1644317 (3 pages) | Cited 43 times

Online Publication Date: 27 January 2004

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In dip-pen nanolithography (DPN), nanoscale chemical patterns are created by directly transferring chemical molecules from the tip of an atomic force microscope probe to a surface. We report the development of a thermally actuated probe array for DPN applications. The array consists of ten thermal bimorph actuated probes, each 300 μm long, with a lateral spacing of 100 μm. The probes are actuated by passing dc current through a heater embedded in the probe base. The array is demonstrated by using it to simultaneously write ten different octadecanethiol patterns on a gold surface. © 2004 American Institute of Physics.
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85.40.Hp Lithography, masks and pattern transfer

Controlled orientation of ellipsoidal fullerene C70 in carbon nanotubes

Andrei N. Khlobystov, Roberto Scipioni, Duc Nguyen-Manh, David A. Britz, David G. Pettifor, G. Andrew D. Briggs, Sergey G. Lyapin, Arzhang Ardavan, and Robin J. Nicholas

Appl. Phys. Lett. 84, 792 (2004); http://dx.doi.org/10.1063/1.1644614 (3 pages) | Cited 21 times

Online Publication Date: 27 January 2004

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Density functional theory calculations predict two orientations for ellipsoidal C70 fullerenes inside single-walled carbon nanotubes (SWNTs) of different sizes: transverse orientation for C70 in (11,11) nanotubes (d = 14.9 Å) and longitudinal orientation for C70 in (10,10) nanotubes (d = 13.6 Å). SWNTs with these diameters have been prepared and filled with the C70 fullerenes, and characterized by Raman spectroscopy and high-resolution transmission electron microscopy, showing the orientations predicted by theory. © 2004 American Institute of Physics.
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71.15.Mb Density functional theory, local density approximation, gradient and other corrections
71.15.Ap Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.)
78.30.Na Fullerenes and related materials
61.48.-c Structure of fullerenes and related hollow and planar molecular structures
81.07.De Nanotubes
81.05.ub Fullerenes and related materials
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