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2 Feb 2004

Volume 84, Issue 5, pp. 645-830

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Appl. Phys. Lett. 84, 810 (2004); http://dx.doi.org/10.1063/1.1644924 (3 pages)

Hendrik F. Hamann, Yves C. Martin, and H. Kumar Wickramasinghe
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Contact issues in electroluminescent devices from ruthenium complexes

Alon A. Gorodetsky, Sara Parker, Jason D. Slinker, Daniel A. Bernards, Man Hoi Wong, George G. Malliaras, Samuel Flores-Torres, and Héctor D. Abruña

Appl. Phys. Lett. 84, 807 (2004); http://dx.doi.org/10.1063/1.1644918 (3 pages) | Cited 13 times

Online Publication Date: 27 January 2004

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We report on the temporal evolution of the current, radiance and efficiency of electroluminescent devices based on films of [Ru(bpy)3]2+(PF6−)2 (bpy is 2,2′-bipyridyl) with various electrodes. Under forward bias (with the bottom electrode wired as the anode) the device characteristics were independent of the electrodes used. The situation was different under reverse bias, where differences were observed in the steady-state as well as in the transient characteristics of devices with different electrodes. The origin of this asymmetry is discussed. © 2004 American Institute of Physics.
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85.60.Jb Light-emitting devices

Thermally assisted recording beyond traditional limits

Hendrik F. Hamann, Yves C. Martin, and H. Kumar Wickramasinghe

Appl. Phys. Lett. 84, 810 (2004); http://dx.doi.org/10.1063/1.1644924 (3 pages) | Cited 32 times

Online Publication Date: 27 January 2004

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This work demonstrates that current magnetic storage density limitations due to superparamagnetic effects can be overcome by thermally assisted writing. Specifically, we write magnetization patterns on thin magnetic films that correspond to storage densities of ∼400 Gbit/in.2. Simple thermal diffusion considerations predict potential storage densities of >1 Tbit/in.2 accompanied by recording speeds of >1 GHz. © 2004 American Institute of Physics.
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85.70.Li Other magnetic recording and storage devices (including tapes, disks, and drums)
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.70.Ak Magnetic properties of monolayers and thin films

Direct observation of contact and channel resistance in pentacene four-terminal thin-film transistor patterned by laser ablation method

Iwao Yagi, Kazuhito Tsukagoshi, and Yoshinobu Aoyagi

Appl. Phys. Lett. 84, 813 (2004); http://dx.doi.org/10.1063/1.1645316 (3 pages) | Cited 66 times

Online Publication Date: 27 January 2004

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We established a dry-etching patterning process for the channel formation of pentacene thin-film transistor, and fabricated a four-terminal device equipped with a gate electrode. The four-terminal device enabled us to divide two-terminal source–drain resistance into two components of contact resistance and pentacene channel resistance. We obtained direct evidence of a gate-voltagedependent contact resistance change: the gate-induced charge significantly reduced the contact resistance and increased source–drain current. Furthermore, the temperature dependence of the device clearly indicated that the contact resistance was much higher than the channel resistance and was dominated in the two-terminal total resistance of the device below 120 K. An observed activation energy of 80 meV for contact resistance was higher than that of 42 meV for pentacene channel resistance. © 2004 American Institute of Physics.
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85.30.Tv Field effect devices
81.65.Cf Surface cleaning, etching, patterning
73.40.Cg Contact resistance, contact potential
52.38.Mf Laser ablation
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