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2 Feb 2004

Volume 84, Issue 5, pp. 645-830

Issue Cover Spotlight Figure

Appl. Phys. Lett. 84, 810 (2004); http://dx.doi.org/10.1063/1.1644924 (3 pages)

Hendrik F. Hamann, Yves C. Martin, and H. Kumar Wickramasinghe
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Improved dielectric properties and tunability of multilayered thin films of (Ba0.80Sr0.20)(Ti1−xZrx)O3 with compositionally graded layer

Can Wang, B. L. Cheng, S. Y. Wang, H. B. Lu, Y. L. Zhou, Z. H. Chen, and G. Z. Yang

Appl. Phys. Lett. 84, 765 (2004); http://dx.doi.org/10.1063/1.1645331 (3 pages) | Cited 30 times

Online Publication Date: 27 January 2004

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Multilayered thin films of (Ba0.80Sr0.20)(Ti1−xZrx)O3 (BSTZ) with compositionally graded layer (CGL) have been fabricated by pulsed laser deposition on Pt/TiO2/SiO2/Si substrate. In each CGL, four individual layers of BSTZ with x = 0.36, 0.18, 0.08 and 0 are grown in series with equal thickness. Three kinds of thin-film CGL samples comprising one, two or four CGLs have been elaborated with the final same thickness, and the thickness of each CGL is accordingly varied in different samples to achieve the gradients of composition. The crystalline structures of the CGL thin films are successively characterized using x-ray diffraction and their electrical properties such as ac dielectric properties and polarizations are investigated. Improved dielectric properties and tunability of permittivity have been observed in the multilayered CGL films compared to single-layer BSTZ films prepared in the identical condition. Furthermore, with increasing gradients of compositions in the CGL multilayered films, the dielectric permittivity and its tunability increase, and the hysteresis loop of the thin films disappears. The results show that the internal stress produced by the gradient of composition could be a dominant factor to influence the dielectric properties. The improved dielectric properties and tunability for the applications of tunable devices can be obtained by the manipulation of the gradient of compositions in the multilayered films. © 2004 American Institute of Physics.
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77.80.Dj Domain structure; hysteresis
77.55.-g Dielectric thin films
81.15.Fg Pulsed laser ablation deposition
77.22.Ej Polarization and depolarization
77.22.Ch Permittivity (dielectric function)

Role of soft dielectric energy in poling crystals or ceramics and in domain average engineering

M. Marvan, J. Erhart, and J. Fousek

Appl. Phys. Lett. 84, 768 (2004); http://dx.doi.org/10.1063/1.1645659 (3 pages) | Cited 1 time

Online Publication Date: 27 January 2004

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Poling process is essential for ferroelectric ceramics and crystals. It is traditionally assumed that the one of PS vectors allowed by symmetry is energetically preferred which is closest to the direction of applied field. It is shown that because of the role of the soft energy this may not be the case. Theoretical results for crystals and ceramics of the mmathm→4mm species show that regions of field directions, which induce PS of a given orientation, depend on the field magnitude. In crystals the situation can even arise when spontaneous polarization is directed against the field. Experiments could demonstrate practical consequences of this theory. © 2004 American Institute of Physics.
Show PACS
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization

Low temperature deposited Ba0.96Ca0.04Ti0.84Zr0.16O3 thin films on Pt electrodes by radio frequency magnetron sputtering

N. Cramer, Elliot Philofsky, Lee Kammerdiner, and T. S. Kalkur

Appl. Phys. Lett. 84, 771 (2004); http://dx.doi.org/10.1063/1.1645313 (3 pages) | Cited 12 times

Online Publication Date: 27 January 2004

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Ba0.96Ca0.04Ti0.84Zr0.16O3 films acceptor doped with Sc were deposited on Pt/TiO2/SiO2/Si substrates using radio frequency magnetron sputtering. Substrate temperatures throughout the fabrication process remained at or below 450 °C, which allows this process to be compatible with many materials commonly used in integrated circuit manufacturing. In addition, this process made no use of oxygen in the sputter gas or in annealing atmospheres and thus it remains compatible with easily oxidized materials. A relative dielectric constant of 166 was achieved along with a loss tangent of 1.9% at 100 kHz. Leakage current densities of 1.6×10−8 A/cm2 were observed at 300 K with 300 kV/cm of applied electric field. © 2004 American Institute of Physics.
Show PACS
81.15.Cd Deposition by sputtering
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
61.72.up Other materials
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
77.22.Gm Dielectric loss and relaxation
77.22.Ch Permittivity (dielectric function)

Nanoscale domain patterning of lead zirconate titanate materials using electron beams

J. H. Ferris, D. B. Li, S. V. Kalinin, and D. A. Bonnell

Appl. Phys. Lett. 84, 774 (2004); http://dx.doi.org/10.1063/1.1644327 (3 pages) | Cited 6 times

Online Publication Date: 27 January 2004

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The interactions of electron beams (e beam) with ferroelectric oxides based on lead zirconate titanate have been quantified. The beam energy and dose dependencies of surface charge have been manipulated to influence local polarization orientation. The mechanism of ferroelectric domain polarization of 100 nm grains in lead zirconate titanate is discussed in terms of electron–solid interactions and the relative number of secondary electrons emitted to trapped electrons. Both positive and negative perpendicular polarization can be realized with e beam exposure. The consequent nanoscale domain patterning is characterized with piezoforce microscopy. © 2004 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
61.82.Ms Insulators
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