APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

2 Feb 2004

Volume 84, Issue 5, pp. 645-830

Issue Cover Spotlight Figure

Appl. Phys. Lett. 84, 810 (2004); http://dx.doi.org/10.1063/1.1644924 (3 pages)

Hendrik F. Hamann, Yves C. Martin, and H. Kumar Wickramasinghe
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Wall roughness effects on an electron bunch

S. Banna, D. Schieber, and L. Schächter

Appl. Phys. Lett. 84, 723 (2004); http://dx.doi.org/10.1063/1.1644031 (3 pages) | Cited 2 times

Online Publication Date: 27 January 2004

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The effect of the surface roughness on a moving electron bunch is considered by resorting to a model of a metallic structure with random perturbations on its surface. Based upon this model, analytic expressions have been derived for the average energy emitted per groove (EPG) and for its standard deviation. For a relativistic bunch, both quantities are shown to be virtually independent of the momentum. Moreover, it has been found that the standard deviation of the EPG is proportional to that of the roughness parameter to the power of 1/4. © 2004 American Institute of Physics.
Show PACS
41.75.Ht Relativistic electron and positron beams
29.20.-c Accelerators

Measurement of the band offsets between amorphous LaAlO3 and silicon

L. F. Edge, D. G. Schlom, S. A. Chambers, E. Cicerrella, J. L. Freeouf, B. Holländer, and J. Schubert

Appl. Phys. Lett. 84, 726 (2004); http://dx.doi.org/10.1063/1.1644055 (3 pages) | Cited 78 times

Online Publication Date: 27 January 2004

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The conduction and valence band offsets between amorphous LaAlO3 and silicon have been determined from x-ray photoelectron spectroscopy measurements. These films, which are free of interfacial SiO2, were made by molecular-beam deposition. The band line-up is type I with measured band offsets of 1.8±0.2 eV for electrons and 3.2±0.1 eV for holes. The band offsets are independent of the doping concentration in the silicon substrate as well as the amorphous LaAlO3 film thickness. These amorphous LaAlO3 films have a bandgap of 6.2±0.1 eV. © 2004 American Institute of Physics.
Show PACS
73.20.At Surface states, band structure, electron density of states
79.60.Dp Adsorbed layers and thin films
71.23.Cq Amorphous semiconductors, metallic glasses, glasses

Lock-in thermography and nonuniformity modeling of thin-film CdTe solar cells

Diana Shvydka, J. P. Rakotoniaina, and O. Breitenstein

Appl. Phys. Lett. 84, 729 (2004); http://dx.doi.org/10.1063/1.1645322 (3 pages) | Cited 7 times

Online Publication Date: 27 January 2004

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We present the lock-in thermography study of thin-film CdTe/CdS solar cells. Several major features of thermal signal are identified, such as much higher intensity for cells under illumination, considerable inhomogeneity, and a bright contour line corresponding to the higher intensity at the cell edge. Light soak stress is shown to increase the device lateral nonuniformity. We model the solar cell as a two-dimensional system of random diodes connected in parallel through a resistive electrode. The simulated current distribution maps are consistent with the thermography data. © 2004 American Institute of Physics.
Show PACS
84.60.Jt Photoelectric conversion

Low temperature InP/Si wafer bonding

Q.-Y. Tong, Q. Gan, G. Hudson, G. Fountain, and P. Enquist

Appl. Phys. Lett. 84, 732 (2004); http://dx.doi.org/10.1063/1.1644615 (3 pages) | Cited 15 times

Online Publication Date: 27 January 2004

Full Text: Read Online (HTML) | Download PDF

Show Abstract
An oxide-free, covalently bonded interface of InP/silicon wafer pairs has been realized at low temperature by B2H6 plasma treatment of bonding surfaces in the reactive ion etch mode followed by a HF dip and room temperature bonding in air. The bonding energy reaches InP fracture surface energy of 630 mJ/m2 at 200 °C. A total B-doped amorphous layer of about 15 Å with peak concentration of ∼ 2×1020 cm−3 was detected at the bonding interface. The release of hydrogen at low temperature from B–H complexes and subsequent absorption of the atomic hydrogen by the amorphous layer at the bonding interface is most likely responsible for the enhanced bonding energy. © 2004 American Institute of Physics.
Show PACS
68.35.Md Surface thermodynamics, surface energies
81.65.Cf Surface cleaning, etching, patterning
81.05.Ea III-V semiconductors
81.05.Cy Elemental semiconductors
81.40.Gh Other heat and thermomechanical treatments
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)

Effect of quantum confinement on shallow acceptor transitions in δ-doped GaAs/AlAs multiple-quantum wells

W. M. Zheng, M. P. Halsall, P. Harmer, P. Harrison, and M. J. Steer

Appl. Phys. Lett. 84, 735 (2004); http://dx.doi.org/10.1063/1.1644912 (3 pages) | Cited 7 times

Online Publication Date: 27 January 2004

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have investigated the effect of confinement on the shallow acceptor transitions in δ-doped GaAs/AlAs multiple-quantum wells with well widths ranging from 30 to 200 Å. A series of Be δ-doped GaAs/AlAs multiple-quantum wells with doping at the well center and a single epilayer of GaAs uniformly Be doped were grown by molecular beam epitaxy. Photoluminescence spectra were measured at 4, 20, 40, 80, 120, and 200 K, respectively. Two-hole transitions of the acceptor-bound exciton from the ground state, 1S3/2(Γ6), to the excited state, 2S3/2(Γ6), were clearly observed. It is found that the acceptor transition energy increases with a decrease in quantum well width. © 2004 American Institute of Physics.
Show PACS
73.21.Fg Quantum wells
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
78.67.De Quantum wells
78.55.Cr III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.72.uj III-V and II-VI semiconductors

Optically detected heavy- and light-hole anti-crossing in GaAs quantum wells under pulsed magnetic fields

Yongmin Kim, Kyu-Seok Lee, and C. H. Perry

Appl. Phys. Lett. 84, 738 (2004); http://dx.doi.org/10.1063/1.1645311 (3 pages) | Cited 3 times

Online Publication Date: 27 January 2004

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report magneto-photoluminescence studies of two undoped GaAs–Al0.3Ga0.7As single quantum well (SQW) samples (120 and 60 Å) in pulsed magnetic fields up to ∼ 65 T. Both samples exhibit exciton transitions due to the ground-state (1s) electron-heavy-hole recombination which undergoes diamagnetic energy shifts at low fields and has a liner dependence at high fields. The 120 Å SQW shows the electron-light-hole exciton transition at zero magnetic field. However at about 30 T, the electron-heavy-hole and the electron-light-hole transitions intersect and show an anti-crossing behavior. The 60 Å SQW shows a similar behavior but the splitting between the heavy- and light-hole excitons can only be observed in the anti-crossing region at about 35 T. The results indicate that the valence band mixing plays a significant role at high magnetic fields. © 2004 American Institute of Physics.
Show PACS
78.67.De Quantum wells
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
71.35.Ji Excitons in magnetic fields; magnetoexcitons
78.20.Ls Magneto-optical effects

A 50-nm-gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect transistor

Moongyu Jang, Yarkyeon Kim, Jaeheon Shin, Seongjae Lee, and Kyoungwan Park

Appl. Phys. Lett. 84, 741 (2004); http://dx.doi.org/10.1063/1.1645665 (3 pages) | Cited 43 times

Online Publication Date: 27 January 2004

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The theoretical and experimental current–voltage characteristics of 50-nm-gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect transistors (SB-MOSFETs) are discussed. The manufactured 50-nm-gate-length n-type SB-MOSFET shows large on/off current ratio with low leakage current less than 10−4 μA/μm. The saturation current is 120 μA/μm when drain and gate voltage is 1 and 3 V, respectively. The experimental current–voltage characteristics of 50-nm-gate-length n-type SB-MOSFET are fitted using newly developed theoretical model. From the theoretical analysis, the off- and on-current is mainly attributed to the thermionic and tunneling current, respectively. The decrease of tunneling distance at silicon/silicide Schottky junction with the increase of drain voltage gives the increase of tunneling current. This phenomenon is explained by using drain-induced Schottky barrier thickness thinning effect. © 2004 American Institute of Physics.
Show PACS
85.30.Tv Field effect devices
73.40.Gk Tunneling
73.30.+y Surface double layers, Schottky barriers, and work functions

Role of osmium in the electrical transport mechanism of polycrystalline tin oxide thin films

A. Forleo, S. Capone, M. Epifani, P. Siciliano, and R. Rella

Appl. Phys. Lett. 84, 744 (2004); http://dx.doi.org/10.1063/1.1643536 (3 pages) | Cited 7 times

Online Publication Date: 27 January 2004

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Undoped and Os-doped SnO2 thin films have been deposited by the sol–gel method. Their electrical properties have been investigated by resistivity and Hall effect measurements in order to understand the role of Os in the electrical transport mechanism. The measurements have been carried out in 100–500 K temperature range both in a vacuum and in air. The experimental results have been analyzed according to the grain-boundary scattering mechanism and they have been used to explain the response toward CH4 of the Os-doped SnO2 thin-film-based gas sensors. © 2004 American Institute of Physics.
Show PACS
73.61.Le Other inorganic semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
72.80.Jc Other crystalline inorganic semiconductors
61.72.up Other materials
61.72.Mm Grain and twin boundaries
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close