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2 Feb 2004

Volume 84, Issue 5, pp. 645-830

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Appl. Phys. Lett. 84, 810 (2004); http://dx.doi.org/10.1063/1.1644924 (3 pages)

Hendrik F. Hamann, Yves C. Martin, and H. Kumar Wickramasinghe
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Enhanced weak Anderson localization phenomena in the magnetoresistance of n-type (Ga,In)(N,As)

J. Teubert, P. J. Klar, W. Heimbrodt, K. Volz, W. Stolz, P. Thomas, G. Leibiger, and V. Gottschalch

Appl. Phys. Lett. 84, 747 (2004); http://dx.doi.org/10.1063/1.1642760 (3 pages) | Cited 15 times

Online Publication Date: 27 January 2004

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Ga1−yInyNxAs1−x with doping densities between 1017 and 1019 cm−3 was grown lattice matched on (100) GaAs by metalorganic vapor-phase epitaxy. Si or Te and Zn served as donors and acceptors, respectively. The magnetoresistance (MR) was measured between 1.6 and 280 K in magnetic fields up to 10 T. The MR of p-type Ga1−yInyNxAs1−x is typical for highly doped III–V semiconductors showing parabolic behavior at all temperatures with a small negative contribution due to weak localization at low fields and low temperatures. In contrast, n-type Ga1−yInyNxAs1−x exhibits a much stronger negative contribution to the MR. For some samples this negative contribution persists up to 280 K and Hmin>10 T. The N-induced conduction band structure changes lead to a strong enhancement of weak localization effects in the electron transport of Ga1−yInyNxAs1−x. © 2004 American Institute of Physics.
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72.20.My Galvanomagnetic and other magnetotransport effects
73.20.Fz Weak or Anderson localization
73.61.Ey III-V semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
71.55.Eq III-V semiconductors

Colossal magnetoresistive manganite-based ferroelectric field-effect transistor on Si

T. Zhao, S. B. Ogale, S. R. Shinde, R. Ramesh, R. Droopad, J. Yu, K. Eisenbeiser, and J. Misewich

Appl. Phys. Lett. 84, 750 (2004); http://dx.doi.org/10.1063/1.1644321 (3 pages) | Cited 39 times

Online Publication Date: 27 January 2004

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An all-perovskite ferroelectric field-effect transistor with a ferroelectric Pb(Zr0.2Ti0.8)O3 (PZT) gate and a colossal magnetoresistive La0.8Ca0.2MnO3 (LCMO) channel has been successfully fabricated by pulsed-laser deposition on Si. A clear and square channel resistivity hysteresis loop, commensurate with the ferroelectric hysteresis loop of PZT, is observed. A maximum modulation of 20% after an electric field poling of 1.5×105 V/cm, and 50% under a magnetic field of 1 T, are achieved near the metal-insulator transition temperature of the LCMO channel. A data retention time of at least one day is measured. The effects of electric and magnetic fields on the LCMO channel resistance are discussed within the framework of phase separation scenario. © 2004 American Institute of Physics.
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75.47.Gk Colossal magnetoresistance
77.80.Dj Domain structure; hysteresis
85.30.Tv Field effect devices
81.15.Fg Pulsed laser ablation deposition
64.75.-g Phase equilibria

On factors inducing the (10math0) texture of hexagonal-close-packed Co63Cr31Mn6 layers in magnetic recording media

Hajung Song, Soon-Ju Kwon, and Kyung-Ho Shin

Appl. Phys. Lett. 84, 753 (2004); http://dx.doi.org/10.1063/1.1644908 (3 pages)

Online Publication Date: 27 January 2004

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We investigate factors affecting the movement of sputtered species and the (10math0) texture formation of hexagonal-close-packed Co63Cr31Mn6 (CoCrMn) layers in magnetic recording media. Deposition conditions and underlayers rendering high mobility of the sputtered species promote the (10math0) texture of the CoCrMn film. Elemental effects are studied by substituting manganese with a series of 3d transition elements (Ti, V, Cr, Fe, Ni, and Cu) in the CoCrMn films. The results suggest that the chemical characteristics of manganese, the preference of bonding with different elements (especially with cobalt), is important in the texture formation of CoCrMn films. © 2004 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Cd Deposition by sputtering
75.50.Ss Magnetic recording materials
75.70.Ak Magnetic properties of monolayers and thin films
68.49.Uv X-ray standing waves

Magnetic properties of Mn doped ZnO tetrapod structures

V. A. L. Roy, A. B. Djurišić, H. Liu, X. X. Zhang, Y. H. Leung, M. H. Xie, J. Gao, H. F. Lui, and C. Surya

Appl. Phys. Lett. 84, 756 (2004); http://dx.doi.org/10.1063/1.1645312 (3 pages) | Cited 81 times

Online Publication Date: 27 January 2004

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ZnO tetrapod nanostructures were prepared by evaporating Zn metal under humid argon flow. After the fabrication, Mn diffusion doping was performed at two different temperatures (600 and 800 °C). The samples were characterized by scanning electron microscopy, transmission electron microscopy, x-ray fluorescence, x-ray diffraction (XRD), superconducting quantum interference device magnetometer, and photoluminescence. Diffusion doping resulted in the increase of the size of tetrapods, but no new peaks were found in XRD spectrum. Mn doped ZnO tetrapod structures were found to be ferromagnetic with Curie temperature ∼50 K, and showed large coercive field (∼3500 Oe for 800 °C sample, ∼5500 Oe for 600 °C sample). © 2004 American Institute of Physics.
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75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.50.Pp Magnetic semiconductors
75.50.Dd Nonmetallic ferromagnetic materials
61.46.-w Structure of nanoscale materials
66.30.Pa Diffusion in nanoscale solids
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
66.30.Ny Chemical interdiffusion; diffusion barriers
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
78.55.Et II-VI semiconductors
61.72.uj III-V and II-VI semiconductors

Systematic study of the magnetization reversal in patterned Co and NiFe Nanolines

W. Casey Uhlig and Jing Shi

Appl. Phys. Lett. 84, 759 (2004); http://dx.doi.org/10.1063/1.1645332 (3 pages) | Cited 34 times

Online Publication Date: 27 January 2004

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We report a universal dependence of switching field of patterned magnetic nanolines as a function of the linewidth for Co and NiFe films of various thicknesses. This dependence is shown to be consistent with a nucleation picture in which the magnetization reversal is controlled only by a small nucleus equivalent to a particle with an aspect ratio of 1.25, which spreads across the width of the nanoline. Micromagnetic simulation, taking into account of the edge roughness, agrees well with the observed results. © 2004 American Institute of Physics.
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75.60.Jk Magnetization reversal mechanisms
75.70.Ak Magnetic properties of monolayers and thin films
75.25.-j Spin arrangements in magnetically ordered materials (including neutron and spin-polarized electron studies, synchrotron-source x-ray scattering, etc.)
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

Uniaxial magnetic anisotropy tuned by nanoscale ripple formation: Ion-sculpting of Co/Cu(001) thin films

D. Sekiba, R. Moroni, G. Gonella, F. Buatier de Mongeot, C. Boragno, L. Mattera, and U. Valbusa

Appl. Phys. Lett. 84, 762 (2004); http://dx.doi.org/10.1063/1.1645317 (3 pages) | Cited 23 times

Online Publication Date: 27 January 2004

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We have investigated the growth of surface nanostructures on a Co/Cu(001) film and the growth of Co films on a nanostructured Cu(001) substrate as well as the effect of nanoscale pattern formation on the film magnetic properties. Here we demonstrate by scanning tunneling microscopy measurements and magneto-optic Kerr effect hysteresis curves that low-temperature grazing-incidence ion sputtering can be used to induce the formation of nanoscale ripples which reduce the four-fold symmetry of the Co film to two-fold, thus generating a strong in-plane uniaxial magnetic anisotropy. The nanostructures and the associated uniaxial magnetic anisotropy were found to be stable up to room temperature. © 2004 American Institute of Physics.
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75.50.Cc Other ferromagnetic metals and alloys
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.30.Gw Magnetic anisotropy
78.20.Ls Magneto-optical effects
81.15.Cd Deposition by sputtering
75.70.Ak Magnetic properties of monolayers and thin films
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
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