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2 Feb 2004

Volume 84, Issue 5, pp. 645-830

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Appl. Phys. Lett. 84, 810 (2004); http://dx.doi.org/10.1063/1.1644924 (3 pages)

Hendrik F. Hamann, Yves C. Martin, and H. Kumar Wickramasinghe
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Lattice-strain-driven ferromagnetic ordering in La0.8Sr0.2MnO3 thin films

Y. P. Lee, S. Y. Park, V. G. Prokhorov, V. A. Komashko, and V. L. Svetchnikov

Appl. Phys. Lett. 84, 777 (2004); http://dx.doi.org/10.1063/1.1645329 (3 pages) | Cited 11 times

Online Publication Date: 27 January 2004

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The effects of lattice strain on the magnetic and the transport properties of La0.8Sr0.2MnO3 films grown on an (001) LaAlO3 substrate and on a La0.8Ca0.2MnO3 layer have been studied. It was observed that the metal-insulator and the ferromagnetic transitions turn out to be at higher temperatures for the film deposited on La0.8Ca0.2MnO3 layer with respect to that on LaAlO3. The dependence of Curie temperature on the bulk and the Jahn–Teller strains has also been determined. © 2004 American Institute of Physics.
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75.70.Ak Magnetic properties of monolayers and thin films
75.47.Lx Magnetic oxides
75.50.Dd Nonmetallic ferromagnetic materials
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
71.30.+h Metal-insulator transitions and other electronic transitions

GaInP2 overgrowth and passivation of colloidal InP nanocrystals using metalorganic chemical vapor deposition

M. C. Hanna, O. I. Mićić, M. J. Seong, S. P. Ahrenkiel, J. M. Nedeljković, and A. J. Nozik

Appl. Phys. Lett. 84, 780 (2004); http://dx.doi.org/10.1063/1.1644620 (3 pages) | Cited 5 times

Online Publication Date: 27 January 2004

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We have used metalorganic chemical vapor deposition to deposit thin GaInP2 passivating films on both isolated and close-packed arrays of colloidal InP/GaInP2 core-shell nanocrystals. Conformal GaInP2 layers of 10–20 nm were grown on the nanocrystals after organic capping molecule removal by a thermal annealing treatment. We show that the InP nanocrystals retain their crystallinity, shape and luminescence efficiency after being exposed to growth temperatures of 600 °C. The GaInP2 nanocrystal composite showed strong photoluminescences indicating effective passivation of surface states. In close-packed nanocrystal arrays, the emission band is redshifted compared to films of isolated nanocrystals indicating electron coupling between dots embedded in GaInP2. © 2004 American Institute of Physics.
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78.55.Cr III-V semiconductors
81.05.Ea III-V semiconductors
68.65.Hb Quantum dots (patterned in quantum wells)
78.67.Hc Quantum dots
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.40.Gh Other heat and thermomechanical treatments
82.70.Dd Colloids
78.66.Fd III-V semiconductors
73.20.At Surface states, band structure, electron density of states
81.65.Rv Passivation

Manganese-doped ZnO nanobelts for spintronics

C. Ronning, P. X. Gao, Y. Ding, Z. L. Wang, and D. Schwen

Appl. Phys. Lett. 84, 783 (2004); http://dx.doi.org/10.1063/1.1645319 (3 pages) | Cited 57 times

Online Publication Date: 27 January 2004

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Zinc oxide (ZnO) nanobelts synthesized by thermal evaporation have been ion implanted with 30 keV Mn+ ions. Both transmission electron microscopy and photoluminescence investigations show highly defective material directly after the implantation process. Upon annealing to 800 °C, the implanted Mn remains in the ZnO nanobelts and the matrix recovers both in structure and luminescence. The produced high-quality ZnO:Mn nanobelts are potentially useful for spintronics. © 2004 American Institute of Physics.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
78.55.Et II-VI semiconductors
61.46.-w Structure of nanoscale materials
81.07.Bc Nanocrystalline materials
61.72.Cc Kinetics of defect formation and annealing
61.72.uj III-V and II-VI semiconductors
78.66.Hf II-VI semiconductors
68.37.Lp Transmission electron microscopy (TEM)

Dynamical nonlinearity in strained InGaAs (311)A sidewall quantum wires

Daniele Alderighi, Marian Zamfirescu, Anna Vinattieri, Massimo Gurioli, Stefano Sanguinetti, Michael Povolotskyi, Jerome Gleize, Aldo Di Carlo, Paolo Lugli, and Richard Nötzel

Appl. Phys. Lett. 84, 786 (2004); http://dx.doi.org/10.1063/1.1639504 (3 pages) | Cited 4 times

Online Publication Date: 27 January 2004

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Significant optical nonlinearity has been found in InGaAs (311)A sidewall quantum wires by means of time resolved photoluminescence measurements. A strong reverse quantum confined Stark effect has been observed and attributed to the dynamical screening of both the internal piezoelectric field and the Coulomb interaction between carriers. The time evolution of the quantum wire emission has been reproduced by means of self-consistent calculations that take into account excitonic effects, strain, and induced piezoelectric charges. © 2004 American Institute of Physics.
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85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.50.Hz Strong-field excitation of optical transitions in quantum systems; multiphoton processes; dynamic Stark shift
42.65.Sf Dynamics of nonlinear optical systems; optical instabilities, optical chaos and complexity, and optical spatio-temporal dynamics

Parallel dip-pen nanolithography with arrays of individually addressable cantilevers

David Bullen, Sung-Wook Chung, Xuefeng Wang, Jun Zou, Chad A. Mirkin, and Chang Liu

Appl. Phys. Lett. 84, 789 (2004); http://dx.doi.org/10.1063/1.1644317 (3 pages) | Cited 43 times

Online Publication Date: 27 January 2004

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In dip-pen nanolithography (DPN), nanoscale chemical patterns are created by directly transferring chemical molecules from the tip of an atomic force microscope probe to a surface. We report the development of a thermally actuated probe array for DPN applications. The array consists of ten thermal bimorph actuated probes, each 300 μm long, with a lateral spacing of 100 μm. The probes are actuated by passing dc current through a heater embedded in the probe base. The array is demonstrated by using it to simultaneously write ten different octadecanethiol patterns on a gold surface. © 2004 American Institute of Physics.
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85.40.Hp Lithography, masks and pattern transfer

Controlled orientation of ellipsoidal fullerene C70 in carbon nanotubes

Andrei N. Khlobystov, Roberto Scipioni, Duc Nguyen-Manh, David A. Britz, David G. Pettifor, G. Andrew D. Briggs, Sergey G. Lyapin, Arzhang Ardavan, and Robin J. Nicholas

Appl. Phys. Lett. 84, 792 (2004); http://dx.doi.org/10.1063/1.1644614 (3 pages) | Cited 21 times

Online Publication Date: 27 January 2004

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Density functional theory calculations predict two orientations for ellipsoidal C70 fullerenes inside single-walled carbon nanotubes (SWNTs) of different sizes: transverse orientation for C70 in (11,11) nanotubes (d = 14.9 Å) and longitudinal orientation for C70 in (10,10) nanotubes (d = 13.6 Å). SWNTs with these diameters have been prepared and filled with the C70 fullerenes, and characterized by Raman spectroscopy and high-resolution transmission electron microscopy, showing the orientations predicted by theory. © 2004 American Institute of Physics.
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71.15.Mb Density functional theory, local density approximation, gradient and other corrections
71.15.Ap Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.)
78.30.Na Fullerenes and related materials
61.48.-c Structure of fullerenes and related hollow and planar molecular structures
81.07.De Nanotubes
81.05.ub Fullerenes and related materials

Excitons and surface luminescence of CdS nanoribbons

K. M. Ip, C. R. Wang, Quan Li, and S. K. Hark

Appl. Phys. Lett. 84, 795 (2004); http://dx.doi.org/10.1063/1.1644625 (3 pages) | Cited 23 times

Online Publication Date: 27 January 2004

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The morphology and optical properties of CdS nanoribbons were studied by transmission electron microscopy and photoluminescence spectroscopy. The wurtzite-structured nanoribbons have a uniform rectangular cross section and grow along the [120] crystallographic direction. They are enclosed by small indice surfaces and have a highly perfect crystalline interior, free of extended defects. Luminescence peaks assigned to free and bound excitons were observed from these nanoribbons at low temperatures. In addition, a surface related luminescence band was also identified, showing that the proximity of unpassivated surfaces does not lead to dissociation of excitons in CdS nanoribbons of high purity and structural quality, even when their thickness is around 20 nm. © 2004 American Institute of Physics.
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78.66.Hf II-VI semiconductors
78.55.Et II-VI semiconductors
73.22.Lp Collective excitations
71.35.Cc Intrinsic properties of excitons; optical absorption spectra

Geometric constraints in the growth of nanotube-templated polymer monolayers

J. N. Coleman and M. S. Ferreira

Appl. Phys. Lett. 84, 798 (2004); http://dx.doi.org/10.1063/1.1643538 (3 pages) | Cited 13 times

Online Publication Date: 27 January 2004

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We present a simple and general model that describes the ordered assembly of polymer strands on nanotube surfaces. Energetically favorable coiling angles are identified based on geometric constraints that limit the maximum coverage of polymers on the walls of the nanotubes. The coiling angles can be controlled by selecting the appropriate nanotube diameters, opening the possibility of engineering the strength of composite fibers. The model is applied to two different polymeric molecules; namely, polyacetylene and a polyphenylenevinylene derivative. © 2004 American Institute of Physics.
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68.47.Pe Langmuir-Blodgett films on solids; polymers on surfaces; biological molecules on surfaces
61.41.+e Polymers, elastomers, and plastics
61.46.-w Structure of nanoscale materials
68.55.A- Nucleation and growth

Conductor microstructures by laser curing of printed gold nanoparticle ink

Jaewon Chung, Seunghwan Ko, Nicole R. Bieri, Costas P. Grigoropoulos, and Dimos Poulikakos

Appl. Phys. Lett. 84, 801 (2004); http://dx.doi.org/10.1063/1.1644907 (3 pages) | Cited 68 times

Online Publication Date: 27 January 2004

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The laser-based curing of printed nanoparticle ink to create microlines (resistors) of electrical resistivity approaching that of bulk gold was investigated. The present work relies on laser absorption in both the nanoparticle ink and the sintered gold layer, as well as the transport of thermal energy in the substrate and the resulting solvent vaporization and nanoparticle deposition and sintering. The morphology and electrical properties of the gold line can be controlled by modulating the spatial distribution of the laser beam intensity. Based on the understanding of the underlying physics, a process that circumvents a serious drawback on the functionality of cured gold microlines is produced. Microconductors with resistivity approaching that of bulk gold are produced, while loss of gold nanoparticles and cross sectional nonuniformities are avoided. © 2004 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
79.20.Ds Laser-beam impact phenomena
65.80.-g Thermal properties of small particles, nanocrystals, nanotubes, and other related systems
73.61.At Metal and metallic alloys

Two-dimensional extremely thin single-crystalline α-Si3N4 microribbons

J. Q. Hu, Y. Bando, T. Sekiguchi, F. F. Xu, and J. H. Zhan

Appl. Phys. Lett. 84, 804 (2004); http://dx.doi.org/10.1063/1.1644911 (3 pages) | Cited 11 times

Online Publication Date: 27 January 2004

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Two-dimensional extremely thin single-crystalline α-Si3N4 microribbons have been achieved in bulk via a thermal decomposition nitridation. The α-Si3N4 microribbons have small thicknesses of ∼10–20 nm, large widths of ∼10–25 μm and long lengths ranging from several hundred micrometers to the order of millimeters, and have the same growth direction of [10math0] crystallographic orientation and are enclosed by ±(0001) and ±(2mathmath0) facets. Room temperature cathodoluminescence from individual ribbons shows one intensive UV emission peak at ∼305 nm, and two weak and broad emission peaks at ∼540 and ∼735 nm, respectively. The form of α-Si3N4 is expected not only to possess many interesting mechanical properties, but also to have different optical properties. © 2004 American Institute of Physics.
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68.55.-a Thin film structure and morphology
78.60.Hk Cathodoluminescence, ionoluminescence
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
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