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9 Feb 2004

Volume 84, Issue 6, pp. 837-1024

Issue Cover Spotlight Figure

Appl. Phys. Lett. 84, 975 (2004); http://dx.doi.org/10.1063/1.1646453 (3 pages)

Xiang Yang Kong and Zhong Lin Wang
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Low-temperature switching fatigue behavior of ferroelectric SrBi2Ta2O9 thin films

G. L. Yuan, J.-M. Liu, S. T. Zhang, D. Wu, Y. P. Wang, Z. G. Liu, H. L. W. Chan, and C. L. Choy

Appl. Phys. Lett. 84, 954 (2004); http://dx.doi.org/10.1063/1.1644056 (3 pages) | Cited 20 times

Online Publication Date: 4 February 2004

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The ferroelectric hysteresis and fatigue behavior over a wide temperature range from 290 to 50 K for SrBi2Ta2O9 thin films with Pt electrodes on silicon substrates, prepared by metalorganic decomposition (MOD) and pulsed-laser deposition (PLD), are investigated. It is found that given a fixed electrical field amplitude, the coercivity of all films increases with decreasing temperature T. The saturated hysteresis loop easily obtained for the MOD-prepared thin films has its remnant polarization enhanced with decreasing T, but the PLD-prepared samples exhibit minor loops whose remnant polarization decays with decreasing T. While the films prepared by MOD exhibit improved fatigue resistance at low T, significant fatigue effect at low T is observed for the films prepared by PLD. Although we cannot rule out the effect of strain, the experimental results can be explained by competition between pinning and depinning of domain walls, which are dependent of temperature and defect charges. © 2004 American Institute of Physics.
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77.55.-g Dielectric thin films
77.80.Fm Switching phenomena
77.80.Dj Domain structure; hysteresis

Influence of strain on the dielectric relaxation of pyrochlore bismuth zinc niobate thin films

Jiwei Lu, Dmitri O. Klenov, and Susanne Stemmer

Appl. Phys. Lett. 84, 957 (2004); http://dx.doi.org/10.1063/1.1646216 (3 pages) | Cited 23 times

Online Publication Date: 4 February 2004

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Bi1.5Zn1.0Nb1.5O7 (BZN) films were deposited by rf magnetron sputtering on different substrates to systematically vary the film stress due the thermal mismatch between BZN and the substrate. Substrates included Pt/SiO2 covered silicon, vycor glass, magnesium oxide, and sapphire. The BZN film microstructures (orientation, grain size, and roughness) were similar on the different substrates. Measurements of the permittivity and dielectric loss tangent were carried out between 80 and 300 K at frequencies between 10 kHz and 10 MHz. Films that were under a moderate tensile stress showed a low-temperature dielectric relaxation, associated with a dielectric loss peak and drop in permittivity, at ∼100 K. In contrast, the dielectric relaxation was shifted to temperatures below 80 K in films on vycor that were under a large tensile stress. This shift reflected a lowering of the activation energy of the dielectric relaxation processes due to tensile stress. It is expected that films under large tensile stress require higher frequencies than bulk BZN to shift the dielectric relaxation to room temperature, which makes these films attractive for low-loss high-frequency applications. © 2004 American Institute of Physics.
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77.22.Gm Dielectric loss and relaxation
77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
68.55.-a Thin film structure and morphology
77.22.Ch Permittivity (dielectric function)
68.60.Bs Mechanical and acoustical properties
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