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9 Feb 2004

Volume 84, Issue 6, pp. 837-1024

Issue Cover Spotlight Figure

Appl. Phys. Lett. 84, 975 (2004); http://dx.doi.org/10.1063/1.1646453 (3 pages)

Xiang Yang Kong and Zhong Lin Wang
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Wavelength flipping in laser emission driven by a switchable holographic grating

D. E. Lucchetta, L. Criante, O. Francescangeli, and F. Simoni

Appl. Phys. Lett. 84, 837 (2004); http://dx.doi.org/10.1063/1.1645660 (3 pages) | Cited 23 times

Online Publication Date: 4 February 2004

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We report lasing from a simple wafer structure made of a thin layer of rhodamine 6G as active material and of a switchable holographic mirror, based on a reflection grating made of polymer dispersed liquid crystals. It is shown that switching-off the mirror reflectivity by application of a suitable voltage allows wavelength flipping of the laser emission by 10 nm. © 2004 American Institute of Physics.
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42.40.Eq Holographic optical elements; holographic gratings
42.70.Df Liquid crystals
42.79.Bh Lenses, prisms and mirrors
42.55.Mv Dye lasers

Terahertz electro-optic wavelength conversion in GaAs quantum wells: Improved efficiency and room-temperature operation

S. G. Carter, V. Ciulin, M. S. Sherwin, M. Hanson, A. Huntington, L. A. Coldren, and A. C. Gossard

Appl. Phys. Lett. 84, 840 (2004); http://dx.doi.org/10.1063/1.1645662 (3 pages) | Cited 21 times

Online Publication Date: 4 February 2004

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A 4-μm-thick sample containing 50 GaAs/AlGaAs asymmetric coupled quantum wells was driven with a strong terahertz (THz) electric field of frequency ωTHz and probed with a near-infrared (NIR) laser of frequency ωNIR. The THz beam modulated the probe to generate sidebands at ωNIR+nωTHz, where n is an integer. Up to 0.2% of the NIR laser power was converted into the n = +1 sideband at 20 K, and sidebands were observed up to room temperature. The strong THz fields also induced changes in the NIR absorption of the sample. © 2004 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.67.De Quantum wells
78.20.Jq Electro-optical effects
42.55.Px Semiconductor lasers; laser diodes
78.30.Fs III-V and II-VI semiconductors

Adaptive geometric optics derived from nonlinear acoustic effects

Keith A. Higginson, Michael A. Costolo, and Edward A. Rietman

Appl. Phys. Lett. 84, 843 (2004); http://dx.doi.org/10.1063/1.1645663 (3 pages) | Cited 8 times

Online Publication Date: 4 February 2004

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Tunable gradient index (GRIN) lenses were formed in a liquid-filled cavity supporting an ultrasonic standing wave. The refractive index gradient is based on the steady-state pressure component of the finite-amplitude acoustic signal. An acoustic lens was constructed which (1) focused and modulated a collimated light source and (2) formed an image. The properties of the lens are a function of the amplitude and frequency of the applied ultrasound. At the center of symmetry, the device can be approximated as a diverging lens with a single focal point of about −10 cm. In general, however, a series of focal lines are formed, to create a device resembling an axicon or an abberrating lens. © 2004 American Institute of Physics.
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42.79.Ry Gradient-index (GRIN) devices
42.15.Fr Aberrations
43.25.Dc Nonlinear acoustics of solids
42.79.Bh Lenses, prisms and mirrors

Temperature tuning of the optical properties of planar photonic crystal microcavities

B. Wild, R. Ferrini, R. Houdré, M. Mulot, S. Anand, and C. J. M. Smith

Appl. Phys. Lett. 84, 846 (2004); http://dx.doi.org/10.1063/1.1645675 (3 pages) | Cited 39 times

Online Publication Date: 4 February 2004

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We report on the temperature tuning of the optical properties of photonic crystal (PhC) microcavities. Planar and one-dimensional cavities were made from two-dimensional PhCs etched in GaAs and InP based vertical waveguides. These systems were optically characterized by an internal light source technique. The samples were mounted on a Peltier stage in order to vary the temperature from 20 to 76 °C. Linear dependence of the resonance wavelengths with respect to the temperature is observed with gradients dλ/dT = 0.09 and 0.1 nm/°C for GaAs and InP based cavities, respectively. These results are in agreement with theoretical calculations based on the thermal dependence of the refractive index of the PhC semiconductor component. © 2004 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
42.70.Qs Photonic bandgap materials
42.79.Gn Optical waveguides and couplers
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Broad-band polarization conversion from a finite periodic structure in the microwave regime

B. T. Hallam, C. R. Lawrence, I. R. Hooper, and J. R. Sambles

Appl. Phys. Lett. 84, 849 (2004); http://dx.doi.org/10.1063/1.1645661 (3 pages) | Cited 6 times

Online Publication Date: 4 February 2004

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A reflection grating demonstrating extraordinarily broad-band polarization conversion in a nondiffractive regime has been studied at microwave frequencies. This single-element structure has been fabricated by electrolessly plating a metallic layer onto a stereo-lithographically produced resin profile. Angle-dependent microwave reflectivity data collected from the grating indicates polarization conversion of greater than 80% over a spectral bandwidth equivalent to the entire visible regime (factor of 2 in frequency). This supports an earlier publication in which it was predicted that a broad-band polarization converter could be created from a suitably profiled diffraction grating. © 2004 American Institute of Physics.
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42.79.Dj Gratings
42.82.Cr Fabrication techniques; lithography, pattern transfer

Propagation loss measurement for surface plasmon-polariton modes at metal waveguides on semiconductor substrates

Touichiro Goto, Yoshitada Katagiri, Hiroshi Fukuda, Hiroyuki Shinojima, Yoshiaki Nakano, Ikutaro Kobayashi, and Yasuyuki Mitsuoka

Appl. Phys. Lett. 84, 852 (2004); http://dx.doi.org/10.1063/1.1645990 (3 pages) | Cited 23 times

Online Publication Date: 4 February 2004

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Propagation losses were measured for surface plasmon-polariton (SPP) modes at metal waveguides on semiconductor substrates. The waveguides are simple strips of Au or Al deposited on InP substrates or 300-nm-thick SiO2 film covering the InP substrates. We used a direct method that can clearly discriminate SPP modes in vidicon-camera images, thereby allowing quantitative measurements. The loss coefficients measured at a wavelength of 1.55 μm were, as predicted by theory, in the range of 8.5–17 dB/mm, which shows the waveguides are feasible for practical applications. © 2004 American Institute of Physics.
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42.79.Gn Optical waveguides and couplers
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)

Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening

T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura

Appl. Phys. Lett. 84, 855 (2004); http://dx.doi.org/10.1063/1.1645992 (3 pages) | Cited 452 times

Online Publication Date: 4 February 2004

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Roughened surfaces of light-emitting diodes (LEDs) provide substantial improvement in light extraction efficiency. By using the laser-lift-off technique followed by an anisotropic etching process to roughen the surface, an n-side-up GaN-based LED with a hexagonal “conelike” surface has been fabricated. The enhancement of the LED output power depends on the surface conditions. The output power of an optimally roughened surface LED shows a twofold to threefold increase compared to that of an LED before surface roughening. © 2004 American Institute of Physics.
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85.60.Jb Light-emitting devices
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.65.Cf Surface cleaning, etching, patterning

Phase conjugation by low-power continuous-wave degenerate four-wave mixing in nonlinear optical polymer fibers

Shaoping Bian and Mark G. Kuzyk

Appl. Phys. Lett. 84, 858 (2004); http://dx.doi.org/10.1063/1.1645995 (3 pages) | Cited 7 times

Online Publication Date: 4 February 2004

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We report on the observation of phase conjugation (PC) using low-power, continuous-wave degenerate four-wave mixing in nonlinear polymer multimode fibers. The fibers are made of poly(methyl methacrylate) doped with Disperse Red 1 as the photosensitive chromophore. With a power less than 2.5 mW at wavelength 633 nm for each beam inside the fiber, a maximum PC reflectivity of 1% is obtained. Phase conjugation is observed for both parallel and orthogonally polarized probe and pump beams. Experimental results show that polarization and intensity profile are preserved in the PC wave. The predominant phase conjugation wave is attributed to the formation of sub-refractive-index gratings inside the fibers. © 2004 American Institute of Physics.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.81.Gs Birefringence, polarization
42.79.Dj Gratings

Highly directional emission from few-micron-size elliptical microdisks

Sun-Kyung Kim, Se-Heon Kim, Guk-Hyun Kim, Hong-Gyu Park, Dong-Jae Shin, and Yong-Hee Lee

Appl. Phys. Lett. 84, 861 (2004); http://dx.doi.org/10.1063/1.1646459 (3 pages) | Cited 25 times

Online Publication Date: 4 February 2004

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Few-micron-sized elliptically deformed InGaAsP–InP microdisk lasers are fabricated and highly directional emissions are observed along the direction perpendicular to the surface of highest curvature. As the size of the elliptical microdisk is reduced, both the azimuthal angular spreading and the number of lobes become smaller. The improved directionality of the smaller structure is attributed to the enhanced tunneling loss at the high curvature surfaces. The far-field radiation is linearly polarized. Charge-coupled-device images confirmed the existence of strong near-field emission in the vicinity of high curvature surfaces. © 2004 American Institute of Physics.
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42.55.Sa Microcavity and microdisk lasers
42.79.Pw Imaging detectors and sensors
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
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