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9 Feb 2004

Volume 84, Issue 6, pp. 837-1024

Issue Cover Spotlight Figure

Appl. Phys. Lett. 84, 975 (2004); http://dx.doi.org/10.1063/1.1646453 (3 pages)

Xiang Yang Kong and Zhong Lin Wang
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Cubic optical nonlinearity in nanostructured SnO2:SiO2

A. Clementi, N. Chiodini, and A. Paleari

Appl. Phys. Lett. 84, 960 (2004); http://dx.doi.org/10.1063/1.1645664 (3 pages) | Cited 14 times

Online Publication Date: 4 February 2004

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Nonlinear self-focusing and absorption effects were investigated in nanostructured SnO2:SiO2 by means of z-scan techniques. The results show electronic nonlinearity with the real part of the cubic susceptibility ranging between 0.5 and 2.3×10−20 m2/V2. Nonlinear dissipative effects appear to be caused by two-photon absorption involving localized states at the cluster interfaces, controlled by oxygen nonstoichiometry. As a result, synthesis can be optimized to give a wide-band-gap semiconductor-doped glass with good figure of merit for nonlinear directional couplers. © 2004 American Institute of Physics.
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42.65.An Optical susceptibility, hyperpolarizability
71.55.Jv Disordered structures; amorphous and glassy solids
61.66.Bi Elemental solids
61.66.Dk Alloys
42.82.Et Waveguides, couplers, and arrays
81.05.Pj Glass-based composites, vitroceramics

In situ area-controlled self-ordering of InAs nanostructures

T. Schallenberg, L. W. Molenkamp, S. Rodt, R. Seguin, D. Bimberg, and G. Karczewski

Appl. Phys. Lett. 84, 963 (2004); http://dx.doi.org/10.1063/1.1644624 (3 pages) | Cited 3 times

Online Publication Date: 4 February 2004

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Real-time control of self-organized growth of InAs nanostructures has been achieved by employing epitaxial stationary shadow masks in a molecular-beam-epitaxy process. The method is based on the surface diffusion of group-III adatoms governed by the group-V surface concentration. Lateral control is achieved by the geometry of the mask and the incidence angles of the molecular beams. We apply the method to self-organized growth of nanoscale InAs quantum structures at the edge of the incidence region of the arsenic beam. The high quality of the in situ fabricated nanostructures is confirmed by bright cathodoluminescence of InAs quantum wire embedded in GaAs barriers. © 2004 American Institute of Physics.
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81.07.Vb Quantum wires
68.65.La Quantum wires (patterned in quantum wells)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.16.Nd Micro- and nanolithography
61.46.-w Structure of nanoscale materials
68.43.Jk Diffusion of adsorbates, kinetics of coarsening and aggregation
78.60.Hk Cathodoluminescence, ionoluminescence

In situ electrochemical fabrication of natural contacts on single nanowires

Wenhao Wu, J. B. DiMaria, Han G. Yoo, Shanlin Pan, L. J. Rothberg, and Yong Zhang

Appl. Phys. Lett. 84, 966 (2004); http://dx.doi.org/10.1063/1.1644619 (3 pages) | Cited 9 times

Online Publication Date: 4 February 2004

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We report a template-based in situ electrochemical method for fabricating natural electric contacts on single nanowires using a pair of cross-patterned electrodes. Such electric contacts are highly stable upon thermal cycling between room temperature and milli-Kelvin temperatures. Direct imaging of the single-nanowire contacts using scanning electron microscopy is also demonstrated. © 2004 American Institute of Physics.
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81.07.Lk Nanocontacts
81.15.Pq Electrodeposition, electroplating
85.40.Ls Metallization, contacts, interconnects; device isolation
81.40.Gh Other heat and thermomechanical treatments

Tunneling-electron-induced molecular luminescence from a nanoscale layer of organic molecules on metal substrates

X.-L. Guo, Z.-C. Dong, A. S. Trifonov, S. Yokoyama, S. Mashiko, and T. Okamoto

Appl. Phys. Lett. 84, 969 (2004); http://dx.doi.org/10.1063/1.1646456 (3 pages) | Cited 10 times

Online Publication Date: 4 February 2004

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See Also: Erratum

Show Abstract
Molecular luminescence from an ultrathin layer of free-base porphyrin molecules has been generated by a scanning tunneling microscope on top of a monolayer spacer of perinone derivatives on Cu(100). Tunneling-electron-induced fluorescence spectra are in good agreement with the conventional photoluminescence data of the molecule. The dominant molecular luminescence peak becomes clear and sharp for bias voltages above ∼2.1 V. The perinone monolayer does not emit light because of quenching effects; it acts as a buffer layer to enhance the decoupling of the electronic state of the porphyrin molecules from the Cu substrate. The molecular luminescence from porphyrin is attributed to the hot electron injection excitation. These results demonstrate the feasibility of electrically driven molecular luminescence on metal substrates by a nanoscale probe. © 2004 American Institute of Physics.
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78.66.Qn Polymers; organic compounds
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
78.55.Kz Solid organic materials

Dissipation in nanocrystalline-diamond nanomechanical resonators

A. B. Hutchinson, P. A. Truitt, K. C. Schwab, L. Sekaric, J. M. Parpia, H. G. Craighead, and J. E. Butler

Appl. Phys. Lett. 84, 972 (2004); http://dx.doi.org/10.1063/1.1646213 (3 pages) | Cited 44 times

Online Publication Date: 4 February 2004

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We have measured the dissipation and frequency of nanocrystalline-diamond nanomechanical resonators with resonant frequencies between 13.7 MHz and 157.3 MHz, over a temperature range of 1.4–274 K. Using both magnetomotive network analysis and a time-domain ring-down technique, we have found the dissipation in this material to have a temperature dependence roughly following T0.2, with Q−1 ≈ 10−4 at low temperatures. The frequency dependence of a large dissipation feature at ∼35–55 K is consistent with thermal activation over a 0.02 eV barrier with an attempt frequency of 10 GHz. © 2004 American Institute of Physics.
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
07.10.Cm Micromechanical devices and systems

Polar-surface dominated ZnO nanobelts and the electrostatic energy induced nanohelixes, nanosprings, and nanospirals

Xiang Yang Kong and Zhong Lin Wang

Appl. Phys. Lett. 84, 975 (2004); http://dx.doi.org/10.1063/1.1646453 (3 pages) | Cited 114 times

Online Publication Date: 4 February 2004

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We report the controlled synthesis of free-standing ZnO nanobelts whose surfaces are dominated by the large polar surfaces. The nanobelts grow along the a axis, their large top/bottom surfaces are the ±(0001) polar planes, and the side surfaces are (01math0). Owing to the positive and negative ionic charges on the zinc- and oxygen-terminated ±(0001) surfaces, respectively, the nanobelts form multiloops of nanohelixes/nanosprings/nanospirals for the sake of reducing electrostatic energy introduced by the polar surfaces as well as balancing the difference in surface tension. The polar surface dominated ZnO nanobelts are likely to be an ideal system for understanding piezoelectricity and polarization induced phenomena at nanoscale. © 2004 American Institute of Physics.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
81.16.-c Methods of micro- and nanofabrication and processing
77.65.-j Piezoelectricity and electromechanical effects
68.03.Cd Surface tension and related phenomena
61.46.-w Structure of nanoscale materials

Optical spectroscopy of single, site-selected, InAs/InP self-assembled quantum dots

D. Chithrani, R. L. Williams, J. Lefebvre, P. J. Poole, and G. C. Aers

Appl. Phys. Lett. 84, 978 (2004); http://dx.doi.org/10.1063/1.1646455 (3 pages) | Cited 48 times

Online Publication Date: 4 February 2004

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We present optical spectroscopy measurements on a single InAs/InP quantum dot emitting around λ=1.55 μm. The dot is produced using a nanotemplate deposition technique that allows precise a priori control of quantum dot position and electronic configuration. Clear evidence of excitonic shell structure and many-body renormalization effects are observed. © 2004 American Institute of Physics.
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78.55.Cr III-V semiconductors
78.67.Hc Quantum dots
68.35.Ct Interface structure and roughness

Determination of anisotropic dipole moments in self-assembled quantum dots using Rabi oscillations

A. Muller, Q. Q. Wang, P. Bianucci, C. K. Shih, and Q. K. Xue

Appl. Phys. Lett. 84, 981 (2004); http://dx.doi.org/10.1063/1.1646462 (3 pages) | Cited 33 times

Online Publication Date: 4 February 2004

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By investigating the polarization-dependent Rabi oscillations using photoluminescence spectroscopy, we determined the respective transition dipole moments of the two excited excitonic states ∣Ex〉 and ∣Ey〉 of a single self-assembled quantum dot that are nondegenerate due to shape anisotropy. We find that the ratio of the two dipole moments is close to the physical elongation ratio of the quantum dot. © 2004 American Institute of Physics.
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78.67.Hc Quantum dots
78.55.Cr III-V semiconductors

Controlled placement and electrical contact properties of individual multiwalled carbon nanotubes on patterned silicon chips

Y. F. Hsiou, Y. J. Yang, L. Stobinski, Watson Kuo, and C. D. Chen

Appl. Phys. Lett. 84, 984 (2004); http://dx.doi.org/10.1063/1.1645985 (3 pages) | Cited 6 times

Online Publication Date: 4 February 2004

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A scheme that allows on-chip growth of multiwalled carbon nanotubes at designed locations is demonstrated. The nanotubes were grown by thermal chemical vapor deposition and were contacted to nanoscaled Cr electrodes fabricated by standard e-beam lithography techniques. The contacts were found to be Ohmic with resistance values on the order of 103 Ω at room temperature. Remarkably, the contacts showed weak temperature dependence down to 40 mK and were insensitive to the magnetic field up to 5 T. © 2004 American Institute of Physics.
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81.07.De Nanotubes
73.63.Fg Nanotubes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.40.Cg Contact resistance, contact potential
85.40.Hp Lithography, masks and pattern transfer
73.40.Ns Metal-nonmetal contacts

Resonant Raman scattering in nanoscale pentacene films

Rui He, Irene Dujovne, Liwei Chen, Qian Miao, Cyrus F. Hirjibehedin, Aron Pinczuk, Colin Nuckolls, Christian Kloc, and Arza Ron

Appl. Phys. Lett. 84, 987 (2004); http://dx.doi.org/10.1063/1.1646756 (3 pages) | Cited 25 times

Online Publication Date: 4 February 2004

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Resonant Raman scattering intensities from nanoscale films of pentacene display large resonant enhancements that enable observation of vibrational modes in monolayer cluster films. The resonant enhancements occur when the outgoing photon energy overlaps the free exciton optical transitions observed in luminescence. The results point to the significant potential of resonant Raman methods in the characterization of nanoscale structures of organic molecular semiconductors. © 2004 American Institute of Physics.
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78.30.Jw Organic compounds, polymers
78.66.Qn Polymers; organic compounds
63.20.D- Phonon states and bands, normal modes, and phonon dispersion
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
78.55.Kz Solid organic materials

In situ observations of carbon nanotube formation using environmental transmission electron microscopy

Renu Sharma and Zafar Iqbal

Appl. Phys. Lett. 84, 990 (2004); http://dx.doi.org/10.1063/1.1646465 (3 pages) | Cited 50 times

Online Publication Date: 4 February 2004

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Environmental transmission electron microscope is used for in situ observations of the growth mechanism and reaction conditions of carbon nanotubes. Chemical vapor deposition was performed by flowing propylene or acetylene gas (precursor) over Ni or Co catalyst heated to 450 °C and 700 °C. We are reporting the in situ observations of the growth process of carbon nanotubes. Multi-wall nanotubes formed at temperatures as low as 450 °C while only single-wall carbon nanotubes formed at higher temperatures (700 °C and above). At lower temperatures, a cubic phase was also observed to form on the walls of the multi-wall carbon nanotubes. © 2004 American Institute of Physics.
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81.07.De Nanotubes
61.46.-w Structure of nanoscale materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.40.Gh Other heat and thermomechanical treatments

Fabrication of ordered array of nanowires of La0.67Ca0.33MnO3 (x = 0.33) in alumina templates with enhanced ferromagnetic transition temperature

K. Shantha Shankar, Sohini Kar, A. K. Raychaudhuri, and G. N. Subbanna

Appl. Phys. Lett. 84, 993 (2004); http://dx.doi.org/10.1063/1.1646761 (3 pages) | Cited 25 times

Online Publication Date: 4 February 2004

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We report fabrication of array of crystalline nanowires (average diameter of 65 nm) of colossal magnetoresistive oxide La0.67Ca0.33MnO3 (LCMO, x = 0.33) within anodized alumina templates by filling the pores with a sol that allows formation of LCMO phase at the relatively low temperature of 600 °C. The crystalline nanowires with correct stoichiometry stabilize in the orthorhombic phase at room temperature. The nanowires are ferromagnetic at room temperature and exhibit enhanced ferromagnetic transition temperature well in excess of 300 K, which is substantially higher than that of single crystalline LCMO. This enhancement we attribute to the size induced lattice contraction in the nanowires. © 2004 American Institute of Physics.
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75.50.Dd Nonmetallic ferromagnetic materials
81.07.Bc Nanocrystalline materials
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.30.Cr Saturation moments and magnetic susceptibilities
61.66.Bi Elemental solids
61.66.Dk Alloys
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