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1 Mar 2004

Volume 84, Issue 9, pp. 1435-1613

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Appl. Phys. Lett. 84, 1558 (2004); http://dx.doi.org/10.1063/1.1651641 (3 pages)

DongWeon Lee, Adrian Wetzel, Roland Bennewitz, Ernst Meyer, Michel Despont, Peter Vettiger, and Christoph Gerber
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Microwave radiation force on a parallel-plate resonator

S. Makarov and S. Kulkarni

Appl. Phys. Lett. 84, 1600 (2004); http://dx.doi.org/10.1063/1.1650901 (3 pages) | Cited 1 time

Online Publication Date: 25 February 2004

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A simulation method is proposed and tested in order to determine the radiation force on metal targets whose size is comparable to wavelength. The method is based on the method of moments solution of the electric-field integral equation, accurate calculation of the near field, and removal of the self-interaction terms responsible for the pinch effect. The method is used to determine the local force distribution for a parallel-plate metal resonator. It is observed that, at the resonance, the individual metal plates may experience large force densities, despite the fact that the net radiation force on the resonator still remains very small. A potential use of this observation is discussed, which is directed toward possible excitation of acoustic vibrations. © 2004 American Institute of Physics.
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78.70.Gq Microwave and radio-frequency interactions
37.10.Vz Mechanical effects of light on atoms, molecules, and ions
07.57.-c Infrared, submillimeter wave, microwave and radiowave instruments and equipment

Physical properties of a single polymeric nanofiber

E. P. S. Tan and C. T. Lim

Appl. Phys. Lett. 84, 1603 (2004); http://dx.doi.org/10.1063/1.1651643 (3 pages) | Cited 69 times

Online Publication Date: 25 February 2004

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The nanostructural and elastic properties of a single polymeric nanofiber extracted from a nanofibrous scaffold are investigated using atomic force microscopy (AFM). AFM imaging of the nanofibers reveals a “shish-kebab” structure. A portion of the nanofiber is suspended over a microscale groove etched on a silicon wafer. A nanoscale three-point bend test is performed to obtain the elastic modulus. This elastic modulus is found to be 1.0±0.2 GPa for fibers less than 350 nm but decrease with increase in fiber diameter in excess of 350 nm. This is due to the significance of shear deformation as the length to diameter ratio decreases. © 2004 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.D- Elasticity
81.70.Bt Mechanical testing, impact tests, static and dynamic loads
68.37.Ps Atomic force microscopy (AFM)
68.35.B- Structure of clean surfaces (and surface reconstruction)

Ruthenium films by digital chemical vapor deposition: Selectivity, nanostructure, and work function

Sandwip K. Dey, Jaydeb Goswami, Diefeng Gu, Henk de Waard, Steve Marcus, and Chris Werkhoven

Appl. Phys. Lett. 84, 1606 (2004); http://dx.doi.org/10.1063/1.1650911 (3 pages) | Cited 16 times

Online Publication Date: 25 February 2004

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Ruthenium electrodes were selectively deposited on photoresist-patterned HfO2 surface [deposited on a SiOx/Si wafer by atomic layer deposition (ALD)] by a manufacturable, digital chemical vapor deposition (DCVD) technique. DCVD of Ru was carried out at 280–320 °C using an alternate delivery of Bis (2,2,6,6-tetramethyl-3,5-heptanedionato)(1,5-cyclooctadiene)Ru (dissolved in tetrahydrofuran) and oxygen. The as-deposited Ru films were polycrystalline, dense, and conducting (resistivity ∼20.6 μΩ cm). However, Rutherford backscattering spectroscopy, x-ray photoelectron spectroscopy, and high-resolution electron microscopy results indicate the presence of an amorphous RuOx at the Ru grain boundaries and at the DCVD–Ru/ALD–HfO2 interface. The estimated work function of DCVD–Ru on ALD–HfO2 was ∼5.1 eV. Moreover, the equivalent oxide thickness, hysteresis in capacitance–voltage, and leakage current density at −2 V of the HfO2/SiOx dielectric, after forming gas (95% N2+5% H2) annealing at 450 °C for 30 min, were 1.4 nm, 20 mV, and 7.4×10−7 A cm-2, respectively. © 2004 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
61.72.Mm Grain and twin boundaries
61.72.Cc Kinetics of defect formation and annealing
61.46.-w Structure of nanoscale materials
82.80.Yc Rutherford backscattering (RBS), and other methods of chemical analysis
68.49.Sf Ion scattering from surfaces (charge transfer, sputtering, SIMS)
79.60.Bm Clean metal, semiconductor, and insulator surfaces
73.61.At Metal and metallic alloys

Correlation between oxidation potential and open-circuit voltage of composite solar cells based on blends of polythiophenes/ fullerene derivative

Abay Gadisa, Mattias Svensson, Mats R. Andersson, and Olle Inganäs

Appl. Phys. Lett. 84, 1609 (2004); http://dx.doi.org/10.1063/1.1650878 (3 pages) | Cited 157 times

Online Publication Date: 25 February 2004

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The photovoltaic parameters of donor/acceptor blend organic solar cells are highly influenced by several parameters, such as the strength of the acceptor species, the morphology of the film due to the solvent, and the mobility of the free charge carriers. In this work, the open-circuit voltage (Voc) of solar cells based on series of conjugated polythiophene polymers were measured and compared. In every cell, the donor polymer was blended with an electron acceptor fullerene molecule. The devices were constructed in a sandwich structure with indium tin oxide (ITO)/metallic polymer (PEDOT:PSS) acting as an anode and Al or LiF/Al acting as a cathode. Comparing the Voc of all the cells shows that this important photovoltaic parameter is systematically varying with the polymer. The variation of photovoltage is attributed to the variation of the oxidation potential of the donor conjugated polymers after due consideration of the different injection conditions in the varying polymers. © 2004 American Institute of Physics.
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84.60.Jt Photoelectric conversion
73.50.Pz Photoconduction and photovoltaic effects
71.55.Jv Disordered structures; amorphous and glassy solids
81.65.Mq Oxidation
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