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1 Mar 2004

Volume 84, Issue 9, pp. 1435-1613

Issue Cover Spotlight Figure

Appl. Phys. Lett. 84, 1558 (2004); http://dx.doi.org/10.1063/1.1651641 (3 pages)

DongWeon Lee, Adrian Wetzel, Roland Bennewitz, Ernst Meyer, Michel Despont, Peter Vettiger, and Christoph Gerber
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Nonlinear emission in II–VI pillar microcavities: Strong versus weak coupling

M. Obert, J. Renner, A. Forchel, G. Bacher, R. André, and D. Le Si Dang

Appl. Phys. Lett. 84, 1435 (2004); http://dx.doi.org/10.1063/1.1651646 (3 pages) | Cited 9 times

Online Publication Date: 25 February 2004

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Pillar microcavities based on CdMnTe/CdMgTe heterostructures have been investigated by means of spatially resolved optical spectroscopy. Strong coupling with a Rabi splitting of about 15.8 meV is demonstrated by performing microreflectivity measurements on a single pillar with three-dimensional optical confinement. Analyzing the temperature and the power dependent photoluminescence signal after nonresonant excitation, clear evidence of strong coupling in the nonlinear emission regime is obtained even at elevated temperatures. © 2004 American Institute of Physics.
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78.55.Et II-VI semiconductors
78.66.Hf II-VI semiconductors

Enhanced Faraday rotation in all-garnet magneto-optical photonic crystal

S. Kahl and A. M. Grishin

Appl. Phys. Lett. 84, 1438 (2004); http://dx.doi.org/10.1063/1.1651324 (3 pages) | Cited 42 times

Online Publication Date: 25 February 2004

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Research on magneto-optical photonic crystals has so far been focused on theoretical investigations, because suitable multilayers of iron garnet, the most promising material, have not been readily available. We report the preparation and characterization of a one-dimensional magneto-optical photonic crystal composed of 17 heteroepitaxial layers of bismuth iron garnet and yttrium iron garnet. The magneto-optical Faraday rotation was increased by 140% while transmission decreased by just 16% at the design wavelength of 750 nm as compared with a single-layer bismuth iron garnet film of equivalent thickness. The sample is free of cracks, and good agreement of simulated and experimental spectra of optical transmission and Faraday rotation indicate high quality of the sample and robustness of the preparation technique. © 2004 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
81.15.Fg Pulsed laser ablation deposition
68.65.Cd Superlattices
78.20.Ls Magneto-optical effects
75.50.Gg Ferrimagnetics

Morphology of femtosecond laser-induced structural changes in bulk transparent materials

Chris B. Schaffer, Alan O. Jamison, and Eric Mazur

Appl. Phys. Lett. 84, 1441 (2004); http://dx.doi.org/10.1063/1.1650876 (3 pages) | Cited 62 times

Online Publication Date: 25 February 2004

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Using optical and electron microscopy, we analyze the energy and focusing angle dependence of structural changes induced in bulk glass by tightly focused femtosecond laser pulses. We observe a transition from small density variations in the material to void formation with increasing laser energy. At energies close to the threshold for producing a structural change, the shape of the structurally changed region is determined by the focal volume of the objective used to focus the femtosecond pulse, while at higher energies, the structural change takes on a conical shape. From these morphological observations, we infer the role of various mechanisms for structural change. © 2004 American Institute of Physics.
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64.70.K- Solid-solid transitions
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
68.35.B- Structure of clean surfaces (and surface reconstruction)
64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition

High-impedance reflectivity and surface-wave band gaps in metamaterials

Lei Zhou and C. T. Chan

Appl. Phys. Lett. 84, 1444 (2004); http://dx.doi.org/10.1063/1.1652236 (3 pages) | Cited 13 times

Online Publication Date: 25 February 2004

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We studied the surface wave and reflective properties of two types of metamaterials, one that combines a material with dispersive μ with a metal film, and another that possesses arbitrary ε and μ. Generic surface wave phase diagrams with respect to ε and μ are given. For the first type, we find that the simultaneous appearance of high-impedance reflectivity and a surface-wave gap requires additional mechanisms such as Bragg scattering, while metamaterials of the second type can possess high surface impedance and a surface-wave gap simultaneously. © 2004 American Institute of Physics.
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42.25.Gy Edge and boundary effects; reflection and refraction
73.25.+i Surface conductivity and carrier phenomena

λ ∼ 4–5.3 μm intersubband emission from InGaAs–AlAsSb quantum cascade structures

D. G. Revin, L. R. Wilson, E. A. Zibik, R. P. Green, J. W. Cockburn, M. J. Steer, R. J. Airey, and M. Hopkinson

Appl. Phys. Lett. 84, 1447 (2004); http://dx.doi.org/10.1063/1.1655691 (3 pages) | Cited 11 times

Online Publication Date: 25 February 2004

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The In0.53Ga0.47As–AlAs0.56Sb0.44 materials system, lattice matched to InP, is an attractive candidate for short wavelength quantum cascade lasers due to the very large conduction band discontinuity (∼1.6 eV) and compatibility with well established quantum cascade laser waveguide design and fabrication technology. In this letter we report the operation of In0.53Ga0.47As–AlAs0.56Sb0.44 quantum cascade structures emitting in the wavelength range λ ∼ 4–5.3 μm. Clear intersubband electroluminescence peaks are observed close to the design wavelengths, with full widths at half maximum in the range of ∼30–40 meV. © 2004 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
78.60.Fi Electroluminescence

Nonlinear optical properties of an organic film formed of dye aggregates with absorption in the telecommunication wavelength range

Satoshi Tatsuura, Minquan Tian, Makoto Furuki, Yasuhiro Sato, Izumi Iwasa, and Hiroyuki Mitsu

Appl. Phys. Lett. 84, 1450 (2004); http://dx.doi.org/10.1063/1.1652234 (3 pages) | Cited 15 times

Online Publication Date: 25 February 2004

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An organic film formed of newly synthesized dye aggregates with an absorption peak in telecommunication wavelength range exhibited large third-order nonlinear optical susceptibility χ(3) and fast recovery of bleached absorption. A derivative with a di(benzofuranonyl)methanolate structure forms stable aggregates in a spin-coated film and shows an absorption maximum at 1.24 μm. An imaginary part χI(3) of the film assumes a maximum at 1.30 μm, which is −0.83×10−7 esu. The time evolution of differential transmission spectra indicates that the time constant of the recovery of bleached absorption is 80–240 fs for a fast component and 2.2–6.5 ps for a slow one. This organic film has considerable advantages for future planar optical devices. © 2004 American Institute of Physics.
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42.65.An Optical susceptibility, hyperpolarizability
78.66.Qn Polymers; organic compounds
68.55.-a Thin film structure and morphology
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.79.Wc Optical coatings

Measurement of the effective electron mass in GaInNAs by energy-loss spectroscopy

M. H. Gass, A. J. Papworth, T. B. Joyce, T. J. Bullough, and P. R. Chalker

Appl. Phys. Lett. 84, 1453 (2004); http://dx.doi.org/10.1063/1.1650906 (3 pages) | Cited 13 times

Online Publication Date: 25 February 2004

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Imaging of the electronic structure of a GaInNAs/GaAs quantum well has been investigated by mapping the variation in the plasmon frequency using an electron energy-loss spectrometer on a dedicated field emission gun scanning transmission electron microscope. Kramers–Kronig analysis of the single scattered low-loss region yields a measure of the joint effective valence electron density. The average electron density has been used to provide a direct measurement of the electron effective mass of GaInNAs. The reduced mass was found to be 0.0874m0 for a 7 nm thick Ga0.9In0.1N0.04As0.96 quantum well. © 2004 American Institute of Physics.
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71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
73.21.Fg Quantum wells
79.20.Uv Electron energy loss spectroscopy
68.37.Lp Transmission electron microscopy (TEM)

Measurements of charge mobility and diffusion coefficient of conjugated electroluminescent polymers by time-of-flight method

Hao-En Tseng, Tzu-Hao Jen, Kang-Yung Peng, and Show-An Chen

Appl. Phys. Lett. 84, 1456 (2004); http://dx.doi.org/10.1063/1.1655700 (3 pages) | Cited 12 times

Online Publication Date: 25 February 2004

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Charge mobilities (μ) and diffusion coefficients (D) of hole (μh, Dh) and electron (μe, De) of the conjugated electroluminescent polymers, poly(phenylene vinylene)s and polyfluorenes, have been measured by fitting of a theoretical photocurrent transient equation to time-of-flight photocurrent transients. The μ so obtained are in agreement with those from inflection points of photocurrent transients. The D value lumps all factors together that cause the dispersion of carriers, and the parameter Dq/μkT can be used as an indicator of the degree of dispersion. This fitting method allows extracting μ and D from highly dispersive photocurrent transients, even for the case in which no inflection point appears. © 2004 American Institute of Physics.
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72.80.Le Polymers; organic compounds (including organic semiconductors)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.Fr Low-field transport and mobility; piezoresistance
78.60.Fi Electroluminescence
72.40.+w Photoconduction and photovoltaic effects

Electroluminescence of single silicon nanocrystals

Jan Valenta, Nenad Lalic, and Jan Linnros

Appl. Phys. Lett. 84, 1459 (2004); http://dx.doi.org/10.1063/1.1655705 (3 pages) | Cited 34 times

Online Publication Date: 25 February 2004

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We report on measurements of room-temperature electroluminescence from single silicon nanocrystals. The electrically driven emission reveals typical characteristics of single-nanocrystal luminescence: the peak wavelength variations, narrowing of spectral bands, a high degree of linear polarization, and intensity fluctuations (blinking) observed on a scale of minutes. From the count rate statistics of individual nanocrystals, we conclude that the yield of radiative emission is as high as 19%. These findings may open a route to highly efficient all-silicon light emitters. © 2004 American Institute of Physics.
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81.05.Cy Elemental semiconductors
85.60.Jb Light-emitting devices
81.07.Bc Nanocrystalline materials
78.60.Fi Electroluminescence
61.46.-w Structure of nanoscale materials

Optical amplification and electroluminescence at 1.54 μm in Er-doped zinc silicate germanate on silicon

C. C. Baker, J. Heikenfeld, Z. Yu, and A. J. Steckl

Appl. Phys. Lett. 84, 1462 (2004); http://dx.doi.org/10.1063/1.1651655 (3 pages) | Cited 16 times

Online Publication Date: 25 February 2004

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Optical amplification and electroluminescence at 1.5 μm is reported in Er-doped Zn2Si0.5Ge0.5O4 (ZSG:Er) on silicon. ZSG:Er films were deposited by rf sputtering from a composite target in Ar/O2 mixtures. Channel waveguides were fabricated by plasma etching with Cl/Ar. The refractive index of ZSG:Er was found to be 1.75 at 1.54 μm. Signal enhancement greater than 13 dB and an internal gain of ∼ 2 dB have been achieved by optically pumping a 4.7 cm ZSG:Er amplifier. Electroluminescence at 1.5 μm was achieved using an ac device structure with a ZSG:Er central layer and upper and lower dielectric layers. © 2004 American Institute of Physics.
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78.60.Fi Electroluminescence
78.66.Li Other semiconductors
42.79.Gn Optical waveguides and couplers
61.72.S- Impurities in crystals
68.55.-a Thin film structure and morphology
81.15.Cd Deposition by sputtering
81.65.Cf Surface cleaning, etching, patterning
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
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