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6 Sep 2004

Volume 85, Issue 10, pp. 1659-1861

Issue Cover Spotlight Figure

Appl. Phys. Lett. 85, 1793 (2004); http://dx.doi.org/10.1063/1.1790588 (3 pages)

Hyunsik Yoon, Kyoung Mi Lee, Dahl-Young Khang, Hong H. Lee, and Se-Jin Choi
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GaAs∕AlGaAs nanowires capped with AlGaAs layers on GaAs(311)B substrates

K. Tateno, H. Gotoh, and Y. Watanabe

Appl. Phys. Lett. 85, 1808 (2004); http://dx.doi.org/10.1063/1.1789234 (3 pages) | Cited 19 times

Online Publication Date: 13 September 2004

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We have investigated GaAs∕AlGaAs nanowires capped with AlGaAs layers for optical device applications. GaAs nanowires are not so stable during AlGaAs capping growth at high temperature. However, AlGaAs nanowires retain their shapes, and GaAs nanowires sandwiched between AlGaAs wires were capped at temperatures as high as 700°C. The capped structures showed sharp photoluminescence peaks at around 730 nm at 4 K, which originated from excitons in quantum wires. We confirmed that the AlGaAs capping layers were grown smoothly around nanowires so that surface recombination centers in GaAs nanowires were reduced compared with air-exposed GaAs wires.
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81.07.Vb Quantum wires
68.65.La Quantum wires (patterned in quantum wells)
68.47.Fg Semiconductor surfaces
78.55.Cr III-V semiconductors
78.67.Lt Quantum wires
73.22.Lp Collective excitations
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Nanoscale modification of electrical and magnetic properties of Fe3O4 thin film by atomic force microscopy lithography

Motoyuki Hirooka, Hidekazu Tanaka, Runwei Li, and Tomoji Kawai

Appl. Phys. Lett. 85, 1811 (2004); http://dx.doi.org/10.1063/1.1784884 (3 pages) | Cited 13 times

Online Publication Date: 13 September 2004

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We present a report on the nanopatterning of an epitaxial ultrathin film of Fe3O4 with room-temperature (ferri)magnetism using atomic force microscopy (AFM). Fe3O4 thin films with atomically flat surfaces were grown using laser molecular-beam epitaxy on a MgAl2O4(111) single-crystal substrate. (Nanowire) were constructed on Fe3O4 thin film by applying an electric field between an AFM conductive tip and the surface of the film. The minimum width and height in the resulting nanowire are 48 nm and 2 nm, respectively. The patterned region of the Fe3O4 film surface possesses a resistance which is 105 times higher than the unpatterned region. Furthermore, magnetic force microscopy measurements also revealed that magnetization of the patterned region is strongly suppressed.
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68.37.Ps Atomic force microscopy (AFM)
81.16.Nd Micro- and nanolithography
75.50.Dd Nonmetallic ferromagnetic materials
68.55.A- Nucleation and growth
75.70.Ak Magnetic properties of monolayers and thin films
75.50.Gg Ferrimagnetics
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
42.62.-b Laser applications
61.46.-w Structure of nanoscale materials
68.37.Rt Magnetic force microscopy (MFM)
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
72.20.My Galvanomagnetic and other magnetotransport effects
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
75.47.Pq Other materials
73.25.+i Surface conductivity and carrier phenomena
75.50.Tt Fine-particle systems; nanocrystalline materials
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Alternate spintronic analog of the electro-optic modulator

S. Bandyopadhyay and M. Cahay

Appl. Phys. Lett. 85, 1814 (2004); http://dx.doi.org/10.1063/1.1790038 (3 pages) | Cited 27 times

Online Publication Date: 13 September 2004

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There is significant current interest in spintronic devices fashioned after a spin analog of the electro-optic modulator proposed by Datta and Das [Appl. Phys. Lett. 56, 665 (1990)]. In their modulator, the “modulation” of the spin-polarized current is carried out by tuning the Rashba spin-orbit interaction with a gate voltage. Here, we propose an analogous modulator where the modulation is carried out by tuning the Dresselhaus spin-orbit interaction instead, using a split gate. Additionally, the magnetization of the source and drain contacts in our device is transverse to the channel, whereas in the Datta-Das device, it is along the channel. Therefore, in the present modulator, there is no magnetic field in the channel unlike in the case of the Datta-Das modulator. This can considerably enhance modulator performance.
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42.79.Hp Optical processors, correlators, and modulators
85.75.Hh Spin polarized field effect transistors
72.25.Dc Spin polarized transport in semiconductors
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
72.20.My Galvanomagnetic and other magnetotransport effects

On-chip manipulation of levitated femtodroplets

I. F. Lyuksyutov, D. G. Naugle, and K. D. D. Rathnayaka

Appl. Phys. Lett. 85, 1817 (2004); http://dx.doi.org/10.1063/1.1781735 (3 pages) | Cited 25 times

Online Publication Date: 13 September 2004

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We report diamagnetic levitation of droplets and∕or particles of pico–femtoliter volume and demonstrate their on-chip storage and high precision manipulation (translation, merging, assembling and rotation). We also demonstrate a levitation based microfluidic processor to process droplets∕particles with up to a billion times smaller volume than in typical microfluidic devices. The levitated particles can be positioned with up to 300 nm accuracy and precisely rotated and assembled, providing a different physical approach for micro-electro-mechanical systems. Force can be applied to the droplets∕particles via magnetic, electric, and gravitational fields with up to femto-Newton accuracy, and potential energy can be controlled with up to 0.2 zepto J(0.05kBT) precision, thus providing experimental tools for fundamental studies.
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85.70.Rp Magnetic levitation, propulsion and control devices
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

Quantum-well band structure effects on the emission polarization from a spin-polarized electron reservoir

Mukul Agrawal and G. S. Solomon

Appl. Phys. Lett. 85, 1820 (2004); http://dx.doi.org/10.1063/1.1786373 (3 pages) | Cited 3 times

Online Publication Date: 13 September 2004

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Many spin-polarized-based devices utilize the optical polarization from semiconductor quantum wells (QWs) as a read out. Under ideal conditions at zero crystal momentum, 100% optical polarization is obtained from these QWs for fully polarized electrons. However, carrier populations typically extend over nonzero crystal momentum states, where band mixing results in nonideal optical polarization. We investigate a single InxGa1−xAs(x=0.2, and 0.08) QW in GaAs in a typical p-i-n spin injector structure, using eight band k.p theory including strain, electric field and quantum-confined Stark effects. By evaluating the carrier distribution and wave functions of the QW states, we find the resulting optical polarization is reduced to ∼60% at 10 K, and further for high temperature and high fields. We show that under certain conditions we can flip the sign of the optical polarization, suggesting the possibility of an electric field controlled optical or spin polarization switch.
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81.05.Ea III-V semiconductors
73.21.Fg Quantum wells
78.67.De Quantum wells
78.20.Jq Electro-optical effects

A nonvolatile memory element based on an organic field-effect transistor

K. N. Narayanan Unni, Remi de Bettignies, Sylvie Dabos-Seignon, and Jean-Michel Nunzi

Appl. Phys. Lett. 85, 1823 (2004); http://dx.doi.org/10.1063/1.1788887 (3 pages) | Cited 88 times

Online Publication Date: 13 September 2004

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Organic field-effect transistors were fabricated with pentacene as the active material and a ferroelectric copolymer poly(vinylidene fluoride–trifluoroethylene) as the gate insulator. As-prepared devices showed normal p-type transistor operation. The ON- and OFF-states could be written to the device by applying appropriate voltages to the gate with respect to short-circuited source and drain electrodes. The devices exhibited excellent memory retention properties.
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85.30.Tv Field effect devices
85.50.Gk Non-volatile ferroelectric memories

Contributions to the effective work function of platinum on hafnium dioxide

J. K. Schaeffer, L. R. C. Fonseca, S. B. Samavedam, Y. Liang, P. J. Tobin, and B. E. White

Appl. Phys. Lett. 85, 1826 (2004); http://dx.doi.org/10.1063/1.1786656 (3 pages) | Cited 76 times

Online Publication Date: 13 September 2004

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The intrinsic and extrinsic contributions to Fermi level pinning of platinum (Pt) electrodes on hafnium dioxide (HfO2) gate dielectrics are investigated by examining the impact of oxygen and forming gas anneals on the effective work function of Pt-HfO2-silicon capacitors. The effective platinum work function is ∼4.6 eV when annealed in forming gas. However, diffusion of oxygen to the Pt∕HfO2 interface increases the platinum work function to a value of ∼4.9 eV. Subsequent annealing in forming gas returns the platinum work function to a value comparable to that measured prior to the oxygen anneal. The effective platinum work functions are compared to the prediction of the metal induced gap states (MIGS) model. The presence of interfacial oxygen vacancies or platinum–hafnium bonds is believed to be responsible for a degree of pinning that is stronger than predicted from the MIGS model alone.
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84.32.Tt Capacitors
73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Cg Contact resistance, contact potential
61.72.Cc Kinetics of defect formation and annealing
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
61.72.J- Point defects and defect clusters
68.35.Fx Diffusion; interface formation

Multiple-bit storage properties of porphyrin monolayers on SiO2

Qiliang Li, Shyam Surthi, Guru Mathur, Srivardhan Gowda, Qian Zhao, Thomas A. Sorenson, Robert C. Tenent, Kannan Muthukumaran, Jonathan S. Lindsey, and Veena Misra

Appl. Phys. Lett. 85, 1829 (2004); http://dx.doi.org/10.1063/1.1782254 (3 pages) | Cited 17 times

Online Publication Date: 13 September 2004

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Hybrid molecule-silicon capacitors have been fabricated by the self-assembly of a monolayer of porphyrin molecules on a silicon oxide surface. The porphyrin employed [5-(4-dihydroxyphosphorylphenyl)-10,15,20-trimesitylporphinatozinc(II)] attaches to silicon oxide via a phosphonate linkage. Cyclic voltammetry current and capacitance/conductance measurements have been used to characterize the capacitors. The presence of multiple distinct peaks in current density and capacitance/conductance measurements are associated with oxidation and reduction of the molecular monolayer. The charge-storage states of the capacitor indicate applicability for use in multiple-bit memory devices.
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84.32.Tt Capacitors
85.65.+h Molecular electronic devices
81.07.Nb Molecular nanostructures
81.15.Pq Electrodeposition, electroplating
82.47.Uv Electrochemical capacitors; supercapacitors

Nanocrystalline metal electrodes for high-efficiency organic solar cells

Tetsuya Taima, Masayuki Chikamatsu, Yuji Yoshida, Kazuhiro Saito, and Kiyoshi Yase

Appl. Phys. Lett. 85, 1832 (2004); http://dx.doi.org/10.1063/1.1784879 (3 pages) | Cited 1 time

Online Publication Date: 13 September 2004

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We demonstrate that indium (In) nanocrystals can be used as efficient small-work function electrodes for organic solar cells. A Schottky-barrier solar cell consisting of the In nanoelectrodes, a zinc phthalocyanine (ZnPc) film as a p-type organic semiconductor, and a gold counterelectrode were assembled by vacuum evaporation on an indium-tin-oxide substrate. Nanoscopic Schottky barriers, which are the origins of photovoltaic effects, were formed at the In nanocrystal∕ZnPc molecule interfaces in the cell. Current density under a dark condition was markedly increased by the introduction of the nanoelectrodes. The power conversion efficiency under air mass 1.5 global solar conditions was 200 fold larger than those of the conventional Pc Schottky-barrier solar cells with film electrodes.
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84.60.Jt Photoelectric conversion
85.30.Hi Surface barrier, boundary, and point contact devices
61.46.-w Structure of nanoscale materials
81.07.Bc Nanocrystalline materials
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.A- Nucleation and growth
73.50.Pz Photoconduction and photovoltaic effects
81.05.Hd Other semiconductors

Dual-band infrared single-layer metallodielectric photonic crystals

Robert P. Drupp, Jeremy A. Bossard, Yong-Hong Ye, Douglas H. Werner, and Theresa S. Mayer

Appl. Phys. Lett. 85, 1835 (2004); http://dx.doi.org/10.1063/1.1786663 (3 pages) | Cited 9 times

Online Publication Date: 13 September 2004

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Metallodielectric photonic crystals (MDPCs) consisting of periodic arrays of self-similar two-stage fractal patch metallic elements patterned on thin dielectric substrates are shown to exhibit excellent mid- and far-infrared dual-band response in a single layer structure. This was achieved by optimizing the element size and interelement spacing of cross-dipole and square-patch fractal elements using full-wave periodic method of moments modeling techniques that calculate electromagnetic scattering from the MDPC surface and are able to account for material loss and loading effects. All structures fabricated based on these designs had two measured stopbands with greater than 10 dB attenuation positioned at wavelengths determined by element geometry and size as well as interelement spacing. This simple single layer fractal MDPC geometry will facilitate further scaling into the near-IR wavelength regime.
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77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
42.70.Qs Photonic bandgap materials
42.25.Bs Wave propagation, transmission and absorption
05.45.Df Fractals

High-power deep ultraviolet light-emitting diodes based on a micro-pixel design

V. Adivarahan, S. Wu, W. H. Sun, V. Mandavilli, M. S. Shatalov, G. Simin, J. W. Yang, H. P. Maruska, and M. Asif Khan

Appl. Phys. Lett. 85, 1838 (2004); http://dx.doi.org/10.1063/1.1784882 (3 pages) | Cited 31 times

Online Publication Date: 13 September 2004

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Using a micro-pixel design, we report the demonstration of high-power deep UV AlGaN-based light-emitting diodes (LEDs) with peak emission wavelength at 280 nm. The design comes in response to lateral current crowding problems, which severely limit the maximum possible active area and the overall performance of ordinary square geometry III-nitride LEDs fabricated on insulating substrates. It is shown that the interconnected micro-pixel geometry significantly reduces both the device series resistance and the thermal impedance, thereby improving heat dissipation and increasing the maximum optical power. The design imparts ever-increasing advantages as the operating wavelength decreases (and the aluminum content increases). The optical power of the 10×10 pixel array with an effective area of 222×222 μm2 only saturates at dc currents higher than 200 mA, which is nearly 50% greater than found for a square geometry LED with identical junction area, fabricated from the same wafer. These 280 nm LEDs demonstrated a high on-wafer cw power of 145 μW with 200 mA of pumping current.
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85.60.Jb Light-emitting devices
42.82.Et Waveguides, couplers, and arrays
42.82.Ds Interconnects, including holographic interconnects

Multifunctional transducer using poly (vinylidene fluoride) active layer and highly conducting poly (3,4-ethylenedioxythiophene) electrode: Actuator and generator

C. S. Lee, J. Joo, S. Han, and S. K. Koh

Appl. Phys. Lett. 85, 1841 (2004); http://dx.doi.org/10.1063/1.1784890 (3 pages) | Cited 8 times

Online Publication Date: 13 September 2004

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Monomorph and bimorph multifunctional transducers such as actuators and generators were fabricated using a piezoelectric poly (vinylidene fluoride) (PVDF) films as the active layer and a highly conducting poly (3,4-ethylenedioxythiophene)∕poly (4-styrenesulfonate) [PEDOT∕PSS (DMSO for solvent)] as the electrode. In order to enhance the adhesion of the films, either the PVDF films or PEDOT∕PSS (DMSO) electrodes were modified using an ion-assisted-reaction (IAR) method. The direct (generator) and inverse piezoelectric (motor) effects as well as the pyroelectric effect in the PVDF-PEDOT∕PSS based devices were observed. The tip displacement of the 12 mm by 30 mm bimorph device made with the PEDOT∕PSS (DMSO) electrodes was 3.5 mm at the resonance frequency with an appled potential of 40 Vrms. The sinusoidal output voltage of the bimorph type generator consisting of the PVDF active layers and PEDOT∕PSS (DMSO) electrodes increased with increasing tip displacement induced by a vibrator. A maximum output voltage of 4.1 V in the pyroelectric PVDF device was generated with a change in temperature.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
68.35.Np Adhesion
77.70.+a Pyroelectric and electrocaloric effects

Noninvasive nature of corona charging on thermal Si∕SiO2 structures

M. S. Dautrich, P. M. Lenahan, A. Y. Kang, and J. F. Conley

Appl. Phys. Lett. 85, 1844 (2004); http://dx.doi.org/10.1063/1.1789576 (2 pages) | Cited 4 times

Online Publication Date: 13 September 2004

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The corona charging technique is widely utilized in commercial Si∕SiO2 semiconductor device reliability characterization tools and has been used in numerous electron spin resonance (ESR) experiments, by several groups to study defect centers in Si∕SiO2 system. A recent ESR study argued that the corona charging approaches are inherently unreliable and invasive. In this work we show that this is not the case. We find that low-field corona biasing is essentially noninvasive and thus can be utilized in both reliability characterization and fundamental studies of defect structures.
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76.30.Mi Color centers and other defects
61.72.J- Point defects and defect clusters
68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
52.80.Hc Glow; corona

Splitting electronic spins with a Kondo double dot device

Denis Feinberg and Pascal Simon

Appl. Phys. Lett. 85, 1846 (2004); http://dx.doi.org/10.1063/1.1784878 (3 pages) | Cited 3 times

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We present a simple device made of two small capacitively-coupled quantum dots in parallel. This setup can be used as an efficient “Stern–Gerlach” spin filter, able to simultaneously produce, from a normal metallic lead, two oppositely spin-polarized currents when submitted to a local magnetic field. This proposal is based on the realization of a Kondo effect where spin and orbital degrees of freedom are entangled, allowing a spatial separation between the two spin polarized currents. In the low temperature Kondo regime, the efficiency is very high and the device conductance reaches the unitary limit, e2∕h per spin branch.
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73.63.Kv Quantum dots
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
72.25.Dc Spin polarized transport in semiconductors
72.10.Fk Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect)
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect

Self-aligned self-assembly process for fabricating organic thin-film transistors

Masahiko Ando, Masahiro Kawasaki, Shuji Imazeki, Hiroshi Sasaki, and Toshihide Kamata

Appl. Phys. Lett. 85, 1849 (2004); http://dx.doi.org/10.1063/1.1784871 (3 pages) | Cited 34 times

Online Publication Date: 13 September 2004

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A process for fabricating alignment-free, printable, organic thin-film transistors is presented. This process utilizes a self-assembly phenomenon in which soluble nanomaterials such as metallic nanoparticles and organic molecules are self-assembled into a device structure. To demonstrate this process, solution-processed source∕drain electrodes were self-aligned to a gate electrode using a hydrophobic self-assembled monolayer (SAM) optically patterned onto the gate electrode using a backsubstrate exposure technique. An organic semiconductor film deposited on the patterned SAM was selectively ordered and substantially self-aligned to the gate electrode. This process is called self-aligned self-assembly. A field-effect mobility of 0.15 cm2∕V s and potential minimum channel length of 3 μm were experimentally demonstrated when pentacene molecules and silver nanoparticles were used as the semiconductor and electrode materials, respectively.
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85.30.Tv Field effect devices
68.55.A- Nucleation and growth
81.16.Dn Self-assembly
61.46.-w Structure of nanoscale materials
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Formation of ohmic contacts to perylene molecular crystals

Masahiro Hiramoto, Akinori Tomioka, Kouji Suemori, and Masaaki Yokoyama

Appl. Phys. Lett. 85, 1852 (2004); http://dx.doi.org/10.1063/1.1792379 (3 pages) | Cited 9 times

Online Publication Date: 13 September 2004

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Ohmic contacts to perylene molecular crystals were successfully formed at bromine-doped p-type crystal∕platinum junctions and sodium-doped n-type crystal∕aluminum junctions to enable hole and electron injection, respectively. Charge-carrier doping of the organic semiconductor surface that was in direct contact with the metal electrodes was revealed as being a requirement for fabricating organic∕metal junctions that were ohmic in character. The fabrication of ohmic contacts would be applicable to carrier injection in organic electroluminescent devices and carrier extraction from organic solar cells.
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81.05.Hd Other semiconductors
73.40.Ns Metal-nonmetal contacts
73.61.Ph Polymers; organic compounds
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Phase-resolved optical Doppler tomography for imaging flow dynamics in microfluidic channels

Lei Wang, Wei Xu, Mark Bachman, G. P. Li, and Zhongping Chen

Appl. Phys. Lett. 85, 1855 (2004); http://dx.doi.org/10.1063/1.1785854 (3 pages) | Cited 7 times

Online Publication Date: 13 September 2004

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Phase-resolved optical Doppler tomography (ODT), an imaging technique based on low coherence interferometry, is presented as a tool to perform high-resolution cross-sectional imaging of fluidic flow in microchannels with high velocity sensitivity. To demonstrate ODT as a tool, electro-osmotic flow (EOF) was investigated, observing cross-sectional images of bidirectional flow within a microfluidic channel and pulsating flow when driven by a pulsed electrical field. ODT demonstrates great promise as a tool for studying the effects of microchannel surface modifications on biological sample flow and optimizing microfluidic device design.
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47.85.Np Fluidics
42.30.Wb Image reconstruction; tomography
47.60.-i Flow phenomena in quasi-one-dimensional systems
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

Microwave photonic crystal with tailor-made negative refractive index

P. Vodo, P. V. Parimi, W. T. Lu, S. Sridhar, and R. Wing

Appl. Phys. Lett. 85, 1858 (2004); http://dx.doi.org/10.1063/1.1787959 (3 pages) | Cited 17 times

Online Publication Date: 13 September 2004

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Negative refraction and left-handed electromagnetism in a metallic photonic crystal (PC) wedge are demonstrated in free space for both transverse magnetic and electric mode propagation. The experimental results are in excellent agreement with numerical calculations based on the band structure with no fit parameters used in modeling. The results demonstrate precision control on the design and fabrication of the PC to achieve tailor-made refractive indices between −0.6 and +1.
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42.70.Qs Photonic bandgap materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
41.20.Jb Electromagnetic wave propagation; radiowave propagation
84.40.-x Radiowave and microwave (including millimeter wave) technology
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Erratum: Crystallographic texture and magnetic anisotropy of α−Fe∕Nd2Fe14B nanocomposites prepared by controlled melt spinning [Appl. Phys. Lett. 79, 2426 (2001)]

X. Y. Zhang, Y. Guan, L. Yang, and J. W. Zhang

Appl. Phys. Lett. 85, 1861 (2004); http://dx.doi.org/10.1063/1.1787150 (1 page)

Online Publication Date: 13 September 2004

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Abstract Unavailable
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99.10.Cd Errata
75.50.Ww Permanent magnets
75.30.Gw Magnetic anisotropy
75.50.Tt Fine-particle systems; nanocrystalline materials
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