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6 Sep 2004

Volume 85, Issue 10, pp. 1659-1861

Issue Cover Spotlight Figure

Appl. Phys. Lett. 85, 1793 (2004); http://dx.doi.org/10.1063/1.1790588 (3 pages)

Hyunsik Yoon, Kyoung Mi Lee, Dahl-Young Khang, Hong H. Lee, and Se-Jin Choi
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Thickness scaling of polycrystalline Pb(Zr,Ti)O3 films down to 35 nm prepared by metalorganic chemical vapor deposition having good ferroelectric properties

Takahiro Oikawa, Hitoshi Morioka, Atsushi Nagai, Hiroshi Funakubo, and Keisuke Saito

Appl. Phys. Lett. 85, 1754 (2004); http://dx.doi.org/10.1063/1.1781354 (3 pages) | Cited 7 times

Online Publication Date: 13 September 2004

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Polycrystalline Pb(Zr0.35Ti0.65)O3 [PZT] films were prepared at 540°C by metalorganic chemical vapor deposition (MOCVD). Lower leakage and lower voltage-saturated 50-nm-thick PZT films were deposited on (111)Ir∕TiO2∕SiO2∕Si substrates than those on (111)Pt∕TiO2∕SiO2∕Si substrates. Moreover, low leakage current and good ferroelectricity were obtained for 35-nm-thick PZT films prepared on (111)Ir∕TiO2∕SiO2∕Si substrates by using source-gas-pulse-introduced MOCVD (pulsed-MOCVD) rather than conventional continuous gas supply MOCVD (continuous-MOCVD). As a result, 35-nm-thick PZT films with a Pr value of 47 μC∕cm2 at a maximum applied voltage of 1.2 V were obtained on (111)Ir∕TiO2∕SiO2∕Si substrates with pulsed-MOCVD. This opens the way for scaling down the film thickness of polycrystalline PZT films further while retaining good ferroelectricity.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.Dj Domain structure; hysteresis
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
77.22.Ej Polarization and depolarization
68.55.-a Thin film structure and morphology
68.55.A- Nucleation and growth

High-frequency surface acoustic wave device based on thin-film piezoelectric interdigital transducers

A. K. Sarin Kumar, P. Paruch, J.-M. Triscone, W. Daniau, S. Ballandras, L. Pellegrino, D. Marré, and T. Tybell

Appl. Phys. Lett. 85, 1757 (2004); http://dx.doi.org/10.1063/1.1787897 (3 pages) | Cited 23 times

Online Publication Date: 13 September 2004

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Using high-quality epitaxial c-axis Pb(Zr0.2Ti0.8)O3 films grown by off-axis magnetron sputtering onto metallic (001) Nb-doped SrTiO3 substrates, a nonconventional thin-film surface acoustic wave device based on periodic piezoelectric transducers was realized. The piezoelectric transducers consist of a series of ferroelectric domains with alternating polarization states. The artificial modification of the ferroelectric domain structure is performed by using an atomic force microscope tip as a source of electric field, allowing local switching of the polarization. Devices with 1.2 and 0.8 μm wavelength, defined by the modulation period of the polarization, and corresponding to central frequencies in the range 1.50–3.50 GHz have been realized and tested.
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43.38.Fx Piezoelectric and ferroelectric transducers
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization
43.20.El Reflection, refraction, diffraction of acoustic waves
81.15.Cd Deposition by sputtering
77.80.Fm Switching phenomena

Silver solid solution piezoelectrics

Ilya Grinberg and Andrew M. Rappe

Appl. Phys. Lett. 85, 1760 (2004); http://dx.doi.org/10.1063/1.1787946 (3 pages) | Cited 18 times

Online Publication Date: 13 September 2004

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Using density functional theory calculations, we investigate the feasibility of using silver on the perovskite A-site in high-performance lead-free piezoelectrics. The calculations show that silver atoms are ferroelectrically active and can off-center by 0.5 math. To induce Ag ferroelctric behavior absent in pure AgNbO3 we explore solid solutions of AgNbO3 with well-known simple perovskites PbTiO3, BaZrO3, and BaTiO3. For the AgNbO3–PbTiO3 solid solution, we predict a morphotropic phase boundary near (AgNbO3)3∕8(PbTiO3)5∕8. We find an unusual sequence of compositional phase transitions in AgNbO3–BaZrO3 and AgNbO3–BaTiO3 which are due to the effects of volume expansion in perovskites. For the AgNbO3–BaTiO3 solid solution we find two morphotropic phase boundaries at 12.5% and 37.5% AgNbO3 compositions with favorable piezoeletric properties and indications of high TC.
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77.80.B- Phase transitions and Curie point
77.65.-j Piezoelectricity and electromechanical effects
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
81.30.Dz Phase diagrams of other materials

Double minimum in the surface stabilized ferroelectric liquid crystal switching response

C. V. Brown, J. M. Hind, K. P. Lymer, and J. C. Jones

Appl. Phys. Lett. 85, 1763 (2004); http://dx.doi.org/10.1063/1.1786365 (3 pages)

Online Publication Date: 13 September 2004

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A double minimum has recently been observed in the time–voltage switching response for a smectic C* liquid crystal layer in the surface stabilized geometry (“Ferroelectric Liquid Crystal Device,” K. P. Lymer and J. C. Jones, U.K. Patent No. GB2338797, 17th June 1999). Liquid crystal continuum theory is used to demonstrate that this unusual switching behavior arises if the equilibrium orientation of the molecular director rotates around the smectic cone as a function of distance through one half of the layer only. The double minimum is shown to evolve for large differences between the ε2 and ε1 components of the smectic C biaxial permittivity tensor.
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77.84.Nh Liquids, emulsions, and suspensions; liquid crystals
77.80.Fm Switching phenomena
61.30.Hn Surface phenomena: alignment, anchoring, anchoring transitions, surface-induced layering, surface-induced ordering, wetting, prewetting transitions, and wetting transitions
78.20.Jq Electro-optical effects
61.30.Dk Continuum models and theories of liquid crystal structure
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
68.15.+e Liquid thin films
77.22.Ch Permittivity (dielectric function)
78.68.+m Optical properties of surfaces
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