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6 Sep 2004

Volume 85, Issue 10, pp. 1659-1861

Issue Cover Spotlight Figure

Appl. Phys. Lett. 85, 1793 (2004); http://dx.doi.org/10.1063/1.1790588 (3 pages)

Hyunsik Yoon, Kyoung Mi Lee, Dahl-Young Khang, Hong H. Lee, and Se-Jin Choi
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Gate-controlled resonant interband tunneling in silicon

S. Sedlmaier, Krishna K. Bhuwalka, A. Ludsteck, M. Schmidt, J. Schulze, W. Hansch, and I. Eisele

Appl. Phys. Lett. 85, 1707 (2004); http://dx.doi.org/10.1063/1.1783023 (3 pages) | Cited 7 times

Online Publication Date: 13 September 2004

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We present gate-controlled resonant interband tunneling on silicon 〈111〉. The investigated structure principally consists of a vertical, gated p-i-n diode grown by molecular beam epitaxy. We evaluated the surface tunnel current from a gate-induced two-dimensional electron channel into the quantized hole states of a degenerately doped δp+ layer. This current reveals a negative differential resistance due to resonant interband tunneling in the forward biased p-i-n diode at 200 K. Even at room temperature the influence of this tunnel mechanism is observed. The experimental results are in good agreement with simulated band diagrams and their dependence on the applied voltages.
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85.30.Kk Junction diodes
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
68.55.A- Nucleation and growth
71.20.Mq Elemental semiconductors
73.40.Gk Tunneling
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

High-electron-mobility AlGaN∕AlN∕GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy

M. Miyoshi, H. Ishikawa, T. Egawa, K. Asai, M. Mouri, T. Shibata, M. Tanaka, and O. Oda

Appl. Phys. Lett. 85, 1710 (2004); http://dx.doi.org/10.1063/1.1790073 (3 pages) | Cited 39 times

Online Publication Date: 13 September 2004

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Al0.26Ga0.74N∕AlN∕GaN heterostructures with 1-nm-thick AlN interfacial layers were grown on 100-mm-diam epitaxial AlN/sapphire templates and sapphire substrates by metalorganic vapor phase epitaxy. It was found that AlN/sapphire templates significantly enhanced the electron mobility of the two-dimensional electron gas (2DEG) confined at the GaN channel. This can be explained by the high-crystal-quality GaN channel realized by the use of epitaxial AlN/sapphire templates as substrates. The very high Hall mobilities of approximately 2100 cm2∕V s at room temperature and approximately 17 000 cm2∕V s at 77 K with a 2DEG density of approximately 1×1013∕cm2 were uniformly obtained for AlGaN∕AlN∕GaN heterostructures on 100-mm-diam epitaxial AlN/sapphire templates. The Hall mobility of AlGaN∕AlN∕GaN heterostructures on epitaxial AlN/sapphire templates reached a very high value of 25 500 cm2∕V s at 15 K.
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81.05.Ea III-V semiconductors
73.61.Ey III-V semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.50.Dn Low-field transport and mobility; piezoresistance
72.20.Fr Low-field transport and mobility; piezoresistance
72.20.My Galvanomagnetic and other magnetotransport effects
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Deep subsurface electronic defect image contrast and resolution amplification in Si wafers using infrared photocarrier radiometry

Jerias Batista, Andreas Mandelis, Derrick Shaughnessy, and Bincheng Li

Appl. Phys. Lett. 85, 1713 (2004); http://dx.doi.org/10.1063/1.1785289 (3 pages) | Cited 5 times

Online Publication Date: 13 September 2004

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A photocarrier radiometry technique using a secondary subband-gap dc light source is introduced, along with the applications to deep subsurface electronic defect analysis in Si wafers. It is shown that the use of a dc light source, in addition to the modulated laser beam, drastically enhances the potential of the technique in resolving low-level damage otherwise virtually indistinguishable by conventional photothermal techniques. Using this methodology, the overall contrast enhancement was about 386% for amplitude and 5586% in phase over conventional photocarrier radiometry.
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71.55.Cn Elemental semiconductors
42.30.Va Image forming and processing
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
42.72.-g Optical sources and standards
42.60.Fc Modulation, tuning, and mode locking
73.20.Hb Impurity and defect levels; energy states of adsorbed species
07.60.Dq Photometers, radiometers, and colorimeters

Stability of deep centers in 4H-SiC epitaxial layers during thermal annealing

Y. Negoro, T. Kimoto, and H. Matsunami

Appl. Phys. Lett. 85, 1716 (2004); http://dx.doi.org/10.1063/1.1790032 (3 pages) | Cited 22 times

Online Publication Date: 13 September 2004

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N-type epitaxial 4H-SiC layers grown by hot-wall chemical vapor deposition were investigated with regard to deep centers by capacitance-voltage measurements and deep level transient spectroscopy (DLTS). The DLTS spectra revealed that the concentrations of deep centers were reduced by one order of magnitude by annealing at 1700 °C, compared to those in an as-grown material. The Z1∕2 center with an energy level of 0.59±0.03 eV and the EH6∕7 center with an energy level of 1.66±0.11 eV below the conduction band edge are annealed out at a temperature of 1700 °C or higher.
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71.55.Ht Other nonmetals
73.40.Ns Metal-nonmetal contacts
71.20.Nr Semiconductor compounds
61.72.Cc Kinetics of defect formation and annealing
85.30.Hi Surface barrier, boundary, and point contact devices

Schottky emission at the metal polymer interface and its effect on the polarization switching of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer thin films

Feng Xia and Q. M. Zhang

Appl. Phys. Lett. 85, 1719 (2004); http://dx.doi.org/10.1063/1.1786364 (3 pages) | Cited 13 times

Online Publication Date: 13 September 2004

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In metal/insulator/metal sandwich structure, the interface between the metal and the insulator thin films plays significant roles in the functional performance of the thin films. In ferroelectric poly(vinylidene fluoride-trifluoroethylene) copylmer thin films metallized by different metals, it is found that the polarization switching is asymmetric due to the work function difference of the metal electrodes, and the degree of asymmetry increases with the increasing work function difference. For the samples with high work function metals as both or at least one of the electrodes, the polarization switching is much faster. The current–voltage curves at various temperatures indicated the interface-controlled asymmetric phenomena are mainly determined by the Schottky emission and charge injection at the metal/insulator polymer interface.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Rw Metal-insulator-metal structures
61.41.+e Polymers, elastomers, and plastics
77.55.-g Dielectric thin films
77.22.Ej Polarization and depolarization
77.80.Fm Switching phenomena
73.61.-r Electrical properties of specific thin films
68.35.Ct Interface structure and roughness
77.80.Dj Domain structure; hysteresis

Electron mobility in very low density GaN∕AlGaN∕GaN heterostructures

M. J. Manfra, K. W. Baldwin, A. M. Sergent, R. J. Molnar, and J. Caissie

Appl. Phys. Lett. 85, 1722 (2004); http://dx.doi.org/10.1063/1.1784887 (3 pages) | Cited 15 times

Online Publication Date: 13 September 2004

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We report on the transport properties of a tunable two-dimensional electron gas (2DEG) confined at the lower interface of a GaN∕Al0.06Ga0.94N∕GaN heterostructure grown by plasma-assisted molecular beam epitaxy on semi-insulating GaN templates prepared by hydride vapor phase epitaxy. Using an insulated gate Hall bar structure, the electron density is continuously tuned from ∼2×1012 down to 1.5×1011 cm−2. At T=300 mK, the 2DEG displays a maximum mobility of 80 000 cm2∕V s at a sheet density of 1.75×1012 cm−2. At low densities, the mobility exhibits a power law dependence on density −μ∼neα, with α∼1.0, over the range of 2×1011–1×1012 cm−2. In this density regime, the mobility is no longer limited by alloy scattering and long-range Coulomb scattering dominates. We discuss the dominant scattering mechanisms that presently limit low temperature mobility at electron densities below 1×1012 cm−2.
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81.05.Ea III-V semiconductors
72.20.Fr Low-field transport and mobility; piezoresistance
72.20.My Galvanomagnetic and other magnetotransport effects
73.61.Ey III-V semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.55.A- Nucleation and growth
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
52.77.Dq Plasma-based ion implantation and deposition

Level crossing conductance spectroscopy of molecular bridges

F. Remacle and R. D. Levine

Appl. Phys. Lett. 85, 1725 (2004); http://dx.doi.org/10.1063/1.1791745 (3 pages) | Cited 5 times

Online Publication Date: 13 September 2004

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A possible mechanism for negative differential resistance is discussed. The level crossing is induced by the source-drain voltage applied across the bridge. The effect is most dramatic when the zero field levels that are resonant with the electrodes are almost degenerate. It is suggested that such degeneracies can arise often when the junctions on either side are weakly coupled by the bridge. Quantitative results for I–V curves are reported on the basis of high-level electronic structure computations for the junction–bridge–junction region and where the electric field is included in the Hamiltonian.
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31.10.+z Theory of electronic structure, electronic transitions, and chemical binding
33.80.Be Level crossing and optical pumping
36.40.Cg Electronic and magnetic properties of clusters

Room temperature sensing of ozone by transparent p-type semiconductor CuAlO2

X. G. Zheng, K. Taniguchi, A. Takahashi, Y. Liu, and C. N. Xu

Appl. Phys. Lett. 85, 1728 (2004); http://dx.doi.org/10.1063/1.1784888 (2 pages) | Cited 28 times

Online Publication Date: 13 September 2004

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A transparent p-type semiconductor, CuAlO2, shows selective and reversible response to ozone gas at room temperature. All existing commercial semiconductor ozone sensors are of n type. This study demonstrates the feasibility of developing an inexpensive p type and transparent ozone sensor. Types of transparent p–n junction ozone sensors may be fabricated using the p-type semiconductor CuAlO2 and existing n-type transparent materials such as In2O3.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
81.05.Hd Other semiconductors
68.55.A- Nucleation and growth
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Electrical characterization of Cd∕CdTe Schottky barrier diodes

Whitney Mason, L. A. Almeida, A. W. Kaleczyc, and J. H. Dinan

Appl. Phys. Lett. 85, 1730 (2004); http://dx.doi.org/10.1063/1.1784873 (3 pages) | Cited 6 times

Online Publication Date: 13 September 2004

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We have deposited Cd metal contacts on molecular-beam epitaxy CdTe(112)B on Si(112) and have made electronic transport measurements to deduce the properties of the Schottky barrier diode thus formed. We find a room-temperature barrier height ϕB=0.92 eV and an ideality factor n≈2. We suggest that the high value of n is due to generation–recombination currents associated with dislocations in the CdTe epilayer.
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85.30.Kk Junction diodes
85.30.Hi Surface barrier, boundary, and point contact devices
73.40.Ns Metal-nonmetal contacts
73.30.+y Surface double layers, Schottky barriers, and work functions
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)

Transport properties of ordered-GalnP∕GaAs heterostructures

R. K. Ahrenkiel, W. Metzger, and D. F. Friedman

Appl. Phys. Lett. 85, 1733 (2004); http://dx.doi.org/10.1063/1.1784876 (3 pages)

Online Publication Date: 13 September 2004

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We have studied the transport and recombination properties of Ga0.52In0.48P∕GaAs heterostructures by two transient techniques; Time-resolved photoluminescence and resonant coupled photoconductive decay. When the Ga0.52In0.48P is ordered, the two techniques produce radically different excess-carrier decay characteristics. These data can be explained by invoking a charge-separation mechanism at a type-II heterointerface. At higher excess-carrier injection levels, the charge-separation mechanism vanishes, and the type-I interface properties develop. These data are compatible with the polarization field model of ordered Ga0.52In0.48P.
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78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
78.55.Cr III-V semiconductors
73.61.Ey III-V semiconductors
73.50.Pz Photoconduction and photovoltaic effects
78.47.-p Spectroscopy of solid state dynamics
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