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13 Sep 2004

Volume 85, Issue 11, pp. 1871-2145

Issue Cover Spotlight Figure

Appl. Phys. Lett. 85, 1895 (2004); http://dx.doi.org/10.1063/1.1792802 (3 pages)

Markus Deubel, Martin Wegener, Artan Kaso, and Sajeev John
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Ferroelectric hysteresis loops of (Pb,Ca)TiO3 thin films under spherical indentation

M. Algueró, M. L. Calzada, A. J. Bushby, and M. J. Reece

Appl. Phys. Lett. 85, 2023 (2004); http://dx.doi.org/10.1063/1.1787594 (3 pages) | Cited 10 times

Online Publication Date: 17 September 2004

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Ferroelectric switching under indentation forces has been studied for a set of (Pb,Ca)TiO3 ferroelectric thin films. A radius of contact of 10.2 μm and an average pressure of 1.5 GPa have been estimated by Hertzian theory. The indentation stress field prevents the ferroelectric hysteresis loops from becoming saturated. Ferroelectric switching is hindered and apparent coercive fields as high as 400 kV cm−1 were observed. As a consequence, small remnant polarizations were obtained. The effect is proposed to be caused by a combination of a decrease of the electric polarization that can be switched by 180° domain wall movements, as a consequence of stress induced 90° domain wall movements under the indentation force, and the clamping of the 90° domain walls by the indentation stress field.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.Dj Domain structure; hysteresis
77.80.Fm Switching phenomena
68.60.Bs Mechanical and acoustical properties
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
68.35.Gy Mechanical properties; surface strains
77.22.Ej Polarization and depolarization
62.20.M- Structural failure of materials

Relaxor and nonlinear behaviors of SrTiO3∕BaTiO3 multilayers derived by a sol–gel process

Jiwei Zhai, T. F. Hung, and Haydn Chen

Appl. Phys. Lett. 85, 2026 (2004); http://dx.doi.org/10.1063/1.1785857 (3 pages) | Cited 12 times

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Multilayered SrTiO3∕BaTiO3 thin films were fabricated on LaNiO3-buffered Pt∕Ti∕SiO2∕Si substrates by a sol–gel deposition method. X-ray diffraction, transmission electron microscopy, and x-ray photoelectron spectroscopy were employed to examine the microstructure and crystalline phase of grown films. The dielectric properties were investigated as a function of multiplayer periodicity. Results showed that dielectric responses of these films were extremely similar to those of relaxor ferroelectric ceramics. The hysteresis loop decreased as the individual layer thickness decreased for a fixed total thickness of about 360 nm. The dielectric constants, however, increased first then decreased as the individual layer thickness increased.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
68.65.Ac Multilayers
77.55.-g Dielectric thin films
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
77.80.Dj Domain structure; hysteresis
68.37.Lp Transmission electron microscopy (TEM)
79.60.Dp Adsorbed layers and thin films
79.60.Bm Clean metal, semiconductor, and insulator surfaces

90°a−b domains in epitaxial ferroelectric Bi3.25La0.75Ti3O12 films

Ming-Wen Chu, Sung Kyun Lee, Dietrich Hesse, and Ulrich Gösele

Appl. Phys. Lett. 85, 2029 (2004); http://dx.doi.org/10.1063/1.1788879 (3 pages) | Cited 11 times

Online Publication Date: 17 September 2004

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A cross-sectional high-resolution electron microscopy study was performed on (010)∕(100)-oriented ferroelectric Bi3.25La0.75Ti3O12 (BLT) films. Using Bragg filtering, curved, irregular, and nanoscale 90° domain configurations were observed. The weak ferroelastic strain of 0.024% suggests a negligible polarization clamping of 90°a–b domains under bipolar electric field and an easy 90° switching of the polar a axis in the ab plane. In addition, antiphase boundaries were characterized. A negligible contribution of 90°a–b domains to the fatigue of BLT is proposed.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization
68.37.Lp Transmission electron microscopy (TEM)
77.80.Fm Switching phenomena
68.55.-a Thin film structure and morphology

Low voltage switching of a spin cast ferroelectric polymer

R. C. G. Naber, P. W. M. Blom, A. W. Marsman, and D. M. de Leeuw

Appl. Phys. Lett. 85, 2032 (2004); http://dx.doi.org/10.1063/1.1788885 (3 pages) | Cited 64 times

Online Publication Date: 17 September 2004

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Employing a conductive polymer as the bottom electrode material of a ferroelectric capacitor is shown to improve the ferroelectric properties of sub-100-nm-thick spin cast poly(vinylidene fluoride/trifluoroethylene) copolymer insulator films. It is demonstrated that a remanent polarization of 65 mC∕m2 is switched with only 5.2 V (80 MV∕m) with a switching time of 80 ms. Compared to similar capacitors but with an aluminum bottom electrode the main improvement is a reduction of the switching time with 3 orders of magnitude at this field strength.
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84.32.Tt Capacitors
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.84.Jd Polymers; organic compounds
77.55.-g Dielectric thin films
77.80.Fm Switching phenomena
77.22.Ej Polarization and depolarization
77.80.Dj Domain structure; hysteresis

Three-dimensional heteroepitaxy in self-assembled BaTiO3–CoFe2O4 nanostructures

H. Zheng, J. Wang, L. Mohaddes-Ardabili, M. Wuttig, L. Salamanca-Riba, D. G. Schlom, and R. Ramesh

Appl. Phys. Lett. 85, 2035 (2004); http://dx.doi.org/10.1063/1.1786653 (3 pages) | Cited 50 times

Online Publication Date: 17 September 2004

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Self-assembled BaTiO3–CoFe2O4 complex oxide nanostructures have been synthesized by pulsed laser deposition. A single ceramic target with a molar ratio of 0.62BaTiO3–0.38CoFe2O4 was used. Spinel CoFe2O4 and perovskite BaTiO3 phases spontaneously separated during heteroepitaxial growth on a single-crystal SrTiO3 (001) substrate. The nanostructures are epitaxial in-plane as well as out-of-plane, with CoFe2O4 nanopillar arrays embedded in a BaTiO3 matrix. The CoFe2O4 nanopillars have uniform size and spacing and nearly circular cross section. As the substrate temperature increases from 750 to 950°C, the average diameter of the pillars increases from ∼9 to ∼70 nm.
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81.07.Bc Nanocrystalline materials
81.05.Mh Cermets, ceramic and refractory composites
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
75.50.Gg Ferrimagnetics
81.15.Fg Pulsed laser ablation deposition
68.55.A- Nucleation and growth
61.46.-w Structure of nanoscale materials

Effect of ceria doping on random-field-related polarization reversal in strontium barium niobate ceramics

Jyh-Tzong Shiue

Appl. Phys. Lett. 85, 2038 (2004); http://dx.doi.org/10.1063/1.1788886 (3 pages)

Online Publication Date: 17 September 2004

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Polarization reversal has been investigated in undoped and Ce3+-doped Sr0.5Ba0.5Nb2O6 in terms of a power-law random-field model. The random fields, excess polarization, and the volume contribution to the excess polarization were evaluated and found to be linearly dependent on the concentration of Ce doping. The origin of the random fields arising form Ce doping is discussed.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
61.72.S- Impurities in crystals
77.22.Ej Polarization and depolarization
77.22.Gm Dielectric loss and relaxation

Microwave liquid-crystal variable phase grating

Fuzi Yang and J. R. Sambles

Appl. Phys. Lett. 85, 2041 (2004); http://dx.doi.org/10.1063/1.1787898 (3 pages) | Cited 9 times

Online Publication Date: 17 September 2004

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A voltage-controlled variable phase grating, at microwave frequencies, is described and its response characterized. It comprises a stack of 71 aluminium strips of 1 mm thickness separated by 75 μm spaces, filled with aligned nematic liquid crystal. For microwaves polarized normal to the grating strips there are a set of resonant transmitted frequencies. By varying the voltages applied across the liquid crystal layers and their distribution, a variable phase microwave grating is realized. This allows low-voltage control of output beam profile and intensity.
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42.70.Df Liquid crystals
42.79.Dj Gratings

Can interface dislocations degrade ferroelectric properties?

S. P. Alpay, I. B. Misirlioglu, V. Nagarajan, and R. Ramesh

Appl. Phys. Lett. 85, 2044 (2004); http://dx.doi.org/10.1063/1.1788894 (3 pages) | Cited 72 times

Online Publication Date: 17 September 2004

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A thermodynamic analysis has been carried out to investigate the role of dislocations in ferroelectric materials. Due to the coupling of the stress field of the dislocation and the polarization, there is a drastic variation in the polarization near the dislocation. These polarization gradients result in strong depolarizing fields that suppress the polarization in a region that extends over several nanometrers. In epitaxial ferroelectric films, these polarization gradients should result in the formation of dead layers that severely degrade ferroelectric properties. The detrimental effect of such regions will be enhanced in ultrathin ferroelectric thin films, and hence play a critical extrinsic role in size effect studies of ferroelectrics.
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61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
61.72.Lk Linear defects: dislocations, disclinations
77.22.Ej Polarization and depolarization
68.60.Bs Mechanical and acoustical properties
65.40.G- Other thermodynamical quantities
77.55.-g Dielectric thin films
77.80.B- Phase transitions and Curie point
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Dielectric properties and space charge behavior in SiC ceramic capacitor

Rui Zhang, Lian Gao, Hailong Wang, and Jingkun Guo

Appl. Phys. Lett. 85, 2047 (2004); http://dx.doi.org/10.1063/1.1794866 (3 pages) | Cited 6 times

Online Publication Date: 17 September 2004

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Strong space charge response is observed in SiC ceramic capacitors at low frequencies up to 0.1 MHz. It leads to a dielectric constant of 2 910 000 at 100 Hz. The critical temperature is observed near 773 K. The losses decrease with increasing temperature. Strong frequency dependence of the dielectric properties is also detected. The SiC ceramic capacitor might be suitable as high-temperature by-pass capacitor in low voltage circuits.
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84.32.Tt Capacitors
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Jp Dielectric breakdown and space-charge effects
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
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