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13 Sep 2004

Volume 85, Issue 11, pp. 1871-2145

Issue Cover Spotlight Figure

Appl. Phys. Lett. 85, 1895 (2004); http://dx.doi.org/10.1063/1.1792802 (3 pages)

Markus Deubel, Martin Wegener, Artan Kaso, and Sajeev John
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Fabrication of three-dimensional photonic crystals using silicon micromachining

Sriram Venkataraman, Garrett J. Schneider, Janusz Murakowski, Shouyuan Shi, and Dennis W. Prather

Appl. Phys. Lett. 85, 2125 (2004); http://dx.doi.org/10.1063/1.1790594 (3 pages) | Cited 9 times

Online Publication Date: 17 September 2004

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We propose a method for the fabrication of three-dimensional photonic-crystal structures using conventional planar silicon micromachining. The method utilizes a single planar etch mask coupled with time-multiplexed, sidewall-passivating, deep anisotropic reactive-ion etching, to create an array of spherical voids with three-dimensional symmetry. Preliminary results are presented that demonstrate the feasibility of the approach.
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42.70.Qs Photonic bandgap materials
81.20.Wk Machining, milling
81.65.Cf Surface cleaning, etching, patterning
81.05.Cy Elemental semiconductors
81.65.Rv Passivation
61.72.Qq Microscopic defects (voids, inclusions, etc.)

Part-per-million gas detection from long-baseline THz spectroscopy

S. A. Harmon and R. A. Cheville

Appl. Phys. Lett. 85, 2128 (2004); http://dx.doi.org/10.1063/1.1788896 (3 pages) | Cited 17 times

Online Publication Date: 17 September 2004

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We report a long-baseline THz time domain spectrometer based on a White cell design capable of detecting gas species in the low part-per-million range in near real time. Coherent transients from methyl chloride vapor are observed directly in the time domain using a 5.0 m path length at pressures down to 1 Pa. Both phase sensitive (lock-in) detection and direct signal averaging using a rapid-scanning delay line are used for data acquisition.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
07.57.Pt Submillimeter wave, microwave and radiowave spectrometers; magnetic resonance spectrometers, auxiliary equipment, and techniques

High-spatial-resolution scanning capacitance microscope using all-metal probe with quartz tuning fork

Yuichi Naitou and Norio Ookubo

Appl. Phys. Lett. 85, 2131 (2004); http://dx.doi.org/10.1063/1.1791342 (3 pages) | Cited 17 times

Online Publication Date: 17 September 2004

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The scanning capacitance microscope (SCM) reported here uses a frequency modulation (FM) technique to control the distance between the sample and an all-metal probe. The probe was attached to a quartz tuning fork in a configuration minimizing the perturbation due to the probe. The FM-SCM yields two images of ∂C∕∂V and ∂C∕∂Z signals, where C is capacitance sensed by the probe, Z the probe–sample distance, and V a bias voltage, respectively. On a cross section of a field effect transistor, the two-dimensional p–n junction locus was observed with a spatial resolution better than 5 nm in the ∂C∕∂V image. The ∂C∕∂Z images of polysilicon gate electrodes and highly doped source/drain regions have higher contrast than the ∂C∕∂V images.
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07.79.-v Scanning probe microscopes and components

Aluminum-induced crystallization of amorphous silicon–germanium thin films

M. Gjukic, M. Buschbeck, R. Lechner, and M. Stutzmann

Appl. Phys. Lett. 85, 2134 (2004); http://dx.doi.org/10.1063/1.1789245 (3 pages) | Cited 13 times

Online Publication Date: 17 September 2004

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Aluminum-induced layer exchange (ALILE) was used to crystallize amorphous silicon–germanium (a-Si1−xGex) alloys. A bilayer structure of aluminum (Al) and a-Si1−xGex was deposited on quartz substrates and annealed below the eutectic temperature of the binary Al–Ge alloy (420°C). The annealing process results in an almost complete exchange of the two layers and leads to the crystallization of the initially amorphous Si1−xGex thin films. Elastic recoil detection and Raman spectroscopy were used for structural characterization. The polycrystalline Si1−xGex (poly-Si1−xGex) samples show good structural properties over the entire composition range. In particular, no significant phase segregation was observed. Thus, ALILE has a high potential for the fabrication of polycrystalline Si1−xGex layers.
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68.55.-a Thin film structure and morphology
68.55.A- Nucleation and growth
68.55.Nq Composition and phase identification
78.66.Jg Amorphous semiconductors; glasses
81.05.Gc Amorphous semiconductors
61.72.Cc Kinetics of defect formation and annealing
81.40.Gh Other heat and thermomechanical treatments
78.35.+c Brillouin and Rayleigh scattering; other light scattering
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
64.70.K- Solid-solid transitions

Superconducting transition edge sensor using dilute AlMn alloys

S. W. Deiker, W. Doriese, G. C. Hilton, K. D. Irwin, W. H. Rippard, J. N. Ullom, L. R. Vale, S. T. Ruggiero, A. Williams, and B. A. Young

Appl. Phys. Lett. 85, 2137 (2004); http://dx.doi.org/10.1063/1.1789575 (3 pages) | Cited 3 times

Online Publication Date: 17 September 2004

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We have fabricated a bolometer using a transition-edge sensor (TES) made of Al doped with Mn to suppress the superconducting critical temperature (Tc) of Al from ∼1 K to ∼100 mK. The resulting detector exhibits low-frequency noise consistent with theory, with a noise-equivalent power of 7.5×10−18 W∕√Hz. The addition of Mn impurities did not significantly increase the heat capacity of the TES. In addition, the detector is surprisingly insensitive to applied magnetic fields. The use of AlMn alloy films in arrays of TES detectors has advantages in simplicity of fabrication when compared to traditional bilayer fabrication techniques.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)
74.78.-w Superconducting films and low-dimensional structures
85.25.Oj Superconducting optical, X-ray, and γ-ray detectors (SIS, NIS, transition edge)
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
61.72.S- Impurities in crystals
74.10.+v Occurrence, potential candidates
74.62.-c Transition temperature variations, phase diagrams
75.40.Cx Static properties (order parameter, static susceptibility, heat capacities, critical exponents, etc.)
74.25.Bt Thermodynamic properties

Microfluidic design rules for capillary slot-based electrospray sources

M. Brinkmann, R. Blossey, S. Arscott, C. Druon, P. Tabourier, S. Le Gac, and C. Rolando

Appl. Phys. Lett. 85, 2140 (2004); http://dx.doi.org/10.1063/1.1792381 (3 pages) | Cited 15 times

Online Publication Date: 17 September 2004

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We formulate microfluidic design principles for electrospray ionization sources based on a rectangular capillary slot formed by two triangular cantilevers. Spontaneous imbibition of the test liquids into the slot by capillary action provides a robust mechanism for liquid transport from a reservoir to the cantilever tip where an electrospray is generated upon application of a voltage. The correct functioning of the source requires the liquid bridging the slot to have a negative Laplace pressure. Imbibition is controlled by the ratio of slot width to height w∕h and the intrinsic contact angles θw, θs of the liquid with the slot walls and the cantilever faces, respectively. Based on these parameters we derive a simple criterion for the complete filling of the slot.
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
68.03.Kn Dynamics (capillary waves)
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