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13 Sep 2004

Volume 85, Issue 11, pp. 1871-2145

Issue Cover Spotlight Figure

Appl. Phys. Lett. 85, 1895 (2004); http://dx.doi.org/10.1063/1.1792802 (3 pages)

Markus Deubel, Martin Wegener, Artan Kaso, and Sajeev John
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Arrays of microlenses of complex shapes prepared by reaction-diffusion in thin films of ionically doped gels

Christopher J. Campbell, Eric Baker, Marcin Fialkowski, and Bartosz A. Grzybowski

Appl. Phys. Lett. 85, 1871 (2004); http://dx.doi.org/10.1063/1.1787595 (3 pages) | Cited 8 times

Online Publication Date: 17 September 2004

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This letter describes a wet-stamping technique for the fabrication of highly regular arrays of microlenses through reaction-diffusion-swelling processes occurring in a thin film of ionically doped gelatin. Geometrical parameters of the lenses depend on and can be controlled by the geometries of the stamped features and the concentrations of chemicals diffusing and reacting in the gelatin matrix. Surface topographies of the lenses are studied experimentally, and are reproduced by a lattice gas reaction-diffusion model.
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42.82.Cr Fabrication techniques; lithography, pattern transfer
42.79.Bh Lenses, prisms and mirrors
82.20.-w Chemical kinetics and dynamics
82.70.Gg Gels and sols
82.33.Ln Reactions in sol gels, aerogels, porous media

InGaSb photodetectors using an InGaSb substrate for 2 μm applications

Tamer F. Refaat, M. Nurul Abedin, Vinay Bhagwat, Ishwara B. Bhat, Partha S. Dutta, and Upendra N. Singh

Appl. Phys. Lett. 85, 1874 (2004); http://dx.doi.org/10.1063/1.1787893 (3 pages) | Cited 8 times

Online Publication Date: 17 September 2004

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Detectors operating at 2 μm are important for several applications including optical communication and atmospheric remote sensing. In this letter, fabrication of 2 μm photodetectors using an InGaSb substrate is reported. The ternary substrates were grown using vertical Bridgmann technique and Zn diffusion was used to fabricate p–n junction diodes and photodiodes. Dark current measurement reveals that the breakdown voltage is in the 0.75 to 1 V range. Spectral response measurements indicated a 2 μm responsivity of 0.56 A∕W corresponding to 35% quantum efficiency. Photodiode performance was compared to similar devices fabricated on binary substrates.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
81.05.Ea III-V semiconductors
81.10.Fq Growth from melts; zone melting and refining
66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.Fx Diffusion; interface formation

Video-rate compatible photorefractive polymers with stable dynamic properties under continuous operation

Canek Fuentes-Hernandez, Jayan Thomas, Roberto Termine, Gerald Meredith, Nasser Peyghambarian, Bernard Kippelen, Steve Barlow, Gregory Walker, Seth R. Marder, Michiharu Yamamoto, Kevin Cammack, and Kenji Matsumoto

Appl. Phys. Lett. 85, 1877 (2004); http://dx.doi.org/10.1063/1.1787956 (3 pages) | Cited 7 times

Online Publication Date: 17 September 2004

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We report on photorefractive polymer composites that exhibit stable dynamic properties under continuous operation. These materials are based on a bis-triarylamine side-chain polymer matrix with a low ionization potential. The evolution of the response time for exposures up to 4 kJ∕cm2 was studied and compared with that obtained in poly(n-vinylcarbazole) (PVK) based composites. In the composites, operational stability is combined with video-rate compatible dynamics, large dynamic range at moderate fields, and long shelf lifetimes.
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42.70.Jk Polymers and organics
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Ultrafast dynamics of the third-order nonlinear response in a two-dimensional InP-based photonic crystal

F. Raineri, Crina Cojocaru, P. Monnier, A. Levenson, R. Raj, C. Seassal, X. Letartre, and P. Viktorovitch

Appl. Phys. Lett. 85, 1880 (2004); http://dx.doi.org/10.1063/1.1788884 (3 pages) | Cited 30 times

Online Publication Date: 17 September 2004

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We report experimental demonstration of very fast nonlinear response around 1.5 μm in an InP-based two-dimensional photonic crystal. The nonlinearity produced by low pump powers via carrier induced nonlinear refractive index, leads to an efficient wavelength shift of a photonic crystal resonance observed in reflectivity. Thus we show that it is possible to obtain round the clock (rise and recovery) switching times shorter than 10 ps with contrast ratio higher than 80%.
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42.70.Qs Photonic bandgap materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.65.Pc Optical bistability, multistability, and switching, including local field effects
78.47.-p Spectroscopy of solid state dynamics
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Highly efficient second-harmonic generation in doubly resonant planar microcavities

Marco Liscidini and Lucio Claudio Andreani

Appl. Phys. Lett. 85, 1883 (2004); http://dx.doi.org/10.1063/1.1786657 (3 pages) | Cited 17 times

Online Publication Date: 17 September 2004

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A theoretical study of second-harmonic generation in planar microcavities with periodic dielectric mirrors is made. Strong enhancement of the nonlinear conversion is predicted when double resonance for the pump and harmonic fields, as well as phase matching, are achieved. For a given structure design, the finite angle of incidence is used as a tuning parameter and the splitting between cavity modes with different polarizations is used to compensate the material dispersion. Examples are given for GaAs cavities with AlGaAs∕Alox dielectric mirrors.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Ultrawide tuning range in doped organic solid-state lasers

D. Schneider, T. Rabe, T. Riedl, T. Dobbertin, M. Kröger, E. Becker, H.-H. Johannes, W. Kowalsky, T. Weimann, J. Wang, and P. Hinze

Appl. Phys. Lett. 85, 1886 (2004); http://dx.doi.org/10.1063/1.1791742 (3 pages) | Cited 33 times

Online Publication Date: 17 September 2004

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We report on the tunability of 4-(Dicyanomethylene)-2-methyl-6-(julolidin-4-yl-vinyl)-4H-pyran (DCM2)-doped guest-host organic lasers. As host materials Tris-(8-hydroxy-quinoline)aluminum (Alq3), 4,4′‐N,N′-dicarbazole-bipheny1 (CBP), and N′N-di(1-naphthyl)-N,N′-diphenyl-1,1′-diphenyl-4,4′-diamine (NPD) are used. The largest tuning range was observed in the Alq3:DCM2 film with 115.3 nm between 597.8 and 713.1 nm. In CBP:DCM2, a tuning range of 85 nm was measured, whereas in NPD:DCM2 only one laser wavelength at 624.4 nm could be observed. When comparing the pump energies, we observed considerably lower threshold energy densities in Alq3:DCM2 and CBP:DCM2 compared to NPD:DCM2.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Rz Doped-insulator lasers and other solid state lasers

Vertical-cavity semiconductor devices for generation and detection of fluorescence emission on a single chip

P. A. Porta and H. D. Summers

Appl. Phys. Lett. 85, 1889 (2004); http://dx.doi.org/10.1063/1.1787153 (3 pages) | Cited 2 times

Online Publication Date: 17 September 2004

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In this letter, we describe the realization and the characterization of vertical-cavity semiconductor devices with monolithically integrated detectors for the excitation and detection of fluorescence emission from a fluorophore. These devices can act as excitation sources in forward bias and as detectors in reverse bias mode. Photonic microstructuring is used to control the optical field within the device. Detection is made possible at wavelengths longer than that of emission, with minimum attenuation of the output signal. These characteristics make these devices suitable for fluorescence spectroscopy as they are able to provide an excitation signal and detect the redshifted dye fluorescence.
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85.60.Jb Light-emitting devices
85.60.Gz Photodetectors (including infrared and CCD detectors)
78.67.De Quantum wells
78.55.Cr III-V semiconductors

Directional emission from asymmetric microlaser resonators of π-conjugated polymers

R. C. Polson and Z. V. Vardeny

Appl. Phys. Lett. 85, 1892 (2004); http://dx.doi.org/10.1063/1.1753064 (3 pages) | Cited 7 times

Online Publication Date: 17 September 2004

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A π-conjugated polymer film was fabricated into an asymmetric microlaser resonator having a quadrapole deformation with irregular boundaries and a Q factor of 600. At high excitation intensities above the threshold for lasing, we observed multimode laser emission spectra and directional emission at four different angles. Chaotic ray dynamics explains the observed emission pattern. © 2004 American Institute of Physics.
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42.55.Sa Microcavity and microdisk lasers
78.66.Qn Polymers; organic compounds

Direct laser writing and characterization of “Slanted Pore” Photonic Crystals

Markus Deubel, Martin Wegener, Artan Kaso, and Sajeev John

Appl. Phys. Lett. 85, 1895 (2004); http://dx.doi.org/10.1063/1.1792802 (3 pages) | Cited 35 times

Online Publication Date: 17 September 2004

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We report the fabrication and characterization of the recently proposed Slanted Pore Photonic Crystals. The Photonic Crystals fabricated via direct laser writing by multiphoton polymerization are characterized by electron microscopy as well as by optical spectroscopy. The latter is compared with band structure calculations. We show that this Slanted Pore geometry allows for controlling the surface termination of the Photonic Crystal.
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42.70.Qs Photonic bandgap materials
42.62.-b Laser applications
82.35.-x Polymers: properties; reactions; polymerization

Absorption, emission spectrum properties, and efficient laser performances of Yb:Y3ScAl4O12 ceramics

J. Saikawa, Y. Sato, T. Taira, and A. Ikesue

Appl. Phys. Lett. 85, 1898 (2004); http://dx.doi.org/10.1063/1.1791339 (3 pages) | Cited 22 times

Online Publication Date: 17 September 2004

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We report on the continuous-wave laser performances of Yb3+-doped disordered Y3Al5O12∕Y3Sc2Al4O12 (YAG∕YSAG) ceramics fabricated by sintering method. These materials exhibit relatively low minimum pump intensity (Imin) and broad emission bandwidth even in the yttrium aluminum garnet systems. The value of Imin in the Yb:Y3ScAl4O12 ceramics was found to be 2∕3 compared with the Yb:YAG single crystal under 970 nm zero-line pumping. Efficient laser oscillation of 72% slope efficiency was obtained for input pump power. These materials attract great interest for high power femtosecond microchip lasers and amplifier applications.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.62.-b Laser applications

Lasing action and photodegradation of disperse Orange 11 dye in liquid solution

Brent F. Howell and Mark G. Kuzyk

Appl. Phys. Lett. 85, 1901 (2004); http://dx.doi.org/10.1063/1.1791323 (3 pages) | Cited 12 times

Online Publication Date: 17 September 2004

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We report optically pumped lasing action near 650 nm of 1-amino-2-methylanthraquinone (known as Disperse Orange 11 or DO11) in the common laser dye solvents dimethylformamide and dimethylsulfoxide. Amplified spontaneous emission (ASE) was studied under second-harmonic Nd:YAG laser excitation in a transverse pumping configuration. ASE conversion efficiency is found to be comparable to other laser dyes. Photodegradation of dye solution in a micro-cuvette was investigated. While DO11 in poly(methyl methacrylate) polymer shows reversible photodegradation, in liquid solution, degradation is permanent.
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42.55.Mv Dye lasers
42.70.Hj Laser materials
78.45.+h Stimulated emission

Optical properties of InP∕GaInP quantum-dot laser structures

G. M. Lewis, J. Lutti, P. M. Smowton, P. Blood, A. B. Krysa, and S. L. Liew

Appl. Phys. Lett. 85, 1904 (2004); http://dx.doi.org/10.1063/1.1794379 (3 pages) | Cited 4 times

Online Publication Date: 17 September 2004

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We have grown InP quantum dots with different rates and on substrates with different orientations. The growth conditions have a major influence on the form of the gain spectrum. Using a high growth rate on a 10° off (100) substrate we obtain a broad gain spectrum due to contributions from a bimodal dot size distribution whereas a sample containing mostly small dots, produced using (211)B substrates, has a narrower gain spectrum centered at a shorter wavelength of ∼700–710 nm. The modal gain saturates at a magnitude significantly smaller than the modal absorption, nevertheless the measured values of modal gain are sufficient to sustain laser action, and structures grown at high growth rate on 10° off (100) substrates are capable of providing laser devices operating in the region of 750 nm.
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42.55.Px Semiconductor lasers; laser diodes
81.07.Ta Quantum dots
78.67.Hc Quantum dots
78.55.Cr III-V semiconductors
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Front-coupling of a prefocused x-ray beam into a monomodal planar waveguide

Christian Fuhse, Ansgar Jarre, Christoph Ollinger, Jens Seeger, Tim Salditt, and Remi Tucoulou

Appl. Phys. Lett. 85, 1907 (2004); http://dx.doi.org/10.1063/1.1791736 (3 pages) | Cited 6 times

Online Publication Date: 17 September 2004

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A hard x-ray beam of photon energy E=12.5 keV has been focused by a Kirkpatrick–Baez mirror system and coupled into the front side of a single-mode x-ray waveguide. The beam dimensions of 3.8×2.5 μm2 in the focus of the mirror system have thus been reduced in one direction to 32 nm, corresponding to the guiding layer thickness of the waveguide. At the same time the waveguide acts as a coherence filter and leads to a well-defined intensity distribution with steep tails in the near- and far-field regions. The total flux transmitted by the waveguide exceeded 108 photons/s while no significant contributions of radiation transmitted through the absorbing waveguide cladding have been observed.
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41.50.+h X-ray beams and x-ray optics

High-quantum-efficiency erbium-doped optical fiber and the effective deactivator

B. Peng, X. M. Qiu, L. Jiang, Z. C. Fan, and W. Huang

Appl. Phys. Lett. 85, 1910 (2004); http://dx.doi.org/10.1063/1.1791743 (3 pages) | Cited 10 times

Online Publication Date: 17 September 2004

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The optical properties of erbium-doped bismuth-based oxide glasses were studied in this letter. By adding a proper amount of hydroxyl group as the deactivator, the excited state absorption and upconversion of erbium were restrained. The mechanism is explained and some amplifiers with good properties are produced.
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42.81.Dp Propagation, scattering, and losses; solitons
78.55.Qr Amorphous materials; glasses and other disordered solids

High external efficiency in a monomode full-photonic-crystal laser under continuous wave electrical injection

A. Talneau, L. LeGratiet, J. L. Gentner, A. Berrier, M. Mulot, S. Anand, and S. Olivier

Appl. Phys. Lett. 85, 1913 (2004); http://dx.doi.org/10.1063/1.1789573 (3 pages) | Cited 7 times

Online Publication Date: 17 September 2004

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We demonstrate continuous wave with an external efficiency over 0.15 W∕A and monomode operation of a full photonic crystal (PhC) laser. The optical confinement and a wavelength selectivity better than 25 dB are all ensured by a unique PhC. We take advantage of the feedback on the fundamental mode which exists within the photonic gap for some specific designs of the PhC guide. These designs are calculated using the plane wave expansion method.
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42.55.Tv Photonic crystal lasers and coherent effects
42.70.Qs Photonic bandgap materials
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
68.65.Fg Quantum wells
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