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20 Sep 2004

Volume 85, Issue 12, pp. 2157-2437

Issue Cover Spotlight Figure

Appl. Phys. Lett. 85, 2390 (2004); http://dx.doi.org/10.1063/1.1796520 (3 pages)

Stas Polonsky and Alan Weger
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Domain hierarchy in annealed (001)-oriented Pb(Mg1∕3Nb2∕3)O3-x%PbTiO3 single crystals

Feiming Bai, JieFang Li, and D. Viehland

Appl. Phys. Lett. 85, 2313 (2004); http://dx.doi.org/10.1063/1.1793353 (3 pages) | Cited 39 times

Online Publication Date: 24 September 2004

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The domain structures of annealed (001)-oriented Pb(Mg1∕3Nb2∕3)O3-x%PbTiO3(PMN-x%PT) crystals for x=10, 20, 30, 35, and 40 at.% have been investigated by polarized optical microscopy and scanning force microscopy in the piezoresponse mode. The results demonstrate the presence of a domain hierarchy on various length scales ranging from 40 nm to 0.1 mm, which varies with x.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.40.Gh Other heat and thermomechanical treatments
68.37.Ps Atomic force microscopy (AFM)

Polarization-dependent electron affinity of LiNbO3 surfaces

W.-C. Yang, B. J. Rodriguez, A. Gruverman, and R. J. Nemanich

Appl. Phys. Lett. 85, 2316 (2004); http://dx.doi.org/10.1063/1.1790604 (3 pages) | Cited 31 times

Online Publication Date: 24 September 2004

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Polar surfaces of a ferroelectric LiNbO3 crystal with periodically poled domains are explored using UV-photoelectron emission microscopy (PEEM). Compared with the positive domains (domains with positive surface polarization charges), a higher photoelectric yield is found from the negative domains (domains with negative surface polarization charges), indicating a lower photothreshold and a corresponding lower electron affinity. The photon-energy-dependent contrast in the PEEM images of the surfaces indicates that the photothreshold of the negative domains is ∼4.6 eV while that of the positive domains is greater than ∼6.2 eV. We propose that the threshold difference between the opposite domains can be attributed to a variation of the electron affinity due to opposite surface dipoles induced by surface adsorbates.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.80.Dj Domain structure; hysteresis
68.37.Xy Scanning Auger microscopy, photoelectron microscopy
79.60.Bm Clean metal, semiconductor, and insulator surfaces
77.22.Ej Polarization and depolarization
71.20.Ps Other inorganic compounds
68.43.Mn Adsorption kinetics
68.35.B- Structure of clean surfaces (and surface reconstruction)

Combinatorial studies of (1−x)Na0.5Bi0.5TiO3−xBaTiO3 thin-film chips

Hong-Wei Cheng, Xue-Jin Zhang, Shan-Tao Zhang, Yan Feng, Yan-Feng Chen, Zhi-Guo Liu, and Guang-Xi Cheng

Appl. Phys. Lett. 85, 2319 (2004); http://dx.doi.org/10.1063/1.1794352 (3 pages) | Cited 22 times

Online Publication Date: 24 September 2004

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Applying a combinatorial methodology, (1−x)Na0.5Bi0.5TiO3−xBaTiO3 (NBT-BT) thin-film chips were fabricated on (001)-LaAlO3 substrates by pulsed laser deposition with a few quaternary masks. A series of NBT-BT library with the composition of BT ranged from 0 to 44% was obtained with uniform composition and well crystallinity. The relation between the concentration of NBT-BT and their structural and dielectric properties were investigated by x-ray diffraction (XRD), evanescent microwave probe, atomic force microscopy, and Raman spectroscopy. An obvious morphotropic phase boundary (MPB) was established to be about 9% BT by XRD, Raman frequency shift, and dielectric anomaly, different from the well-known MPB of the materials. The result shows the high efficiency of combinatorial method in searching new relaxor ferroelectrics.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
81.15.Fg Pulsed laser ablation deposition
77.22.Ch Permittivity (dielectric function)
78.30.Hv Other nonmetallic inorganics
68.37.Ps Atomic force microscopy (AFM)
78.66.Nk Insulators
85.40.Sz Deposition technology

Piezoelectric and ferroelectric properties of 1-μm-thick lead zirconate titanate film fabricated by a double-spin-coating process

Gun-Tae Park, Jong-Jin Choi, Chee-Sung Park, Jae-Wung Lee, and Hyoun-Ee Kim

Appl. Phys. Lett. 85, 2322 (2004); http://dx.doi.org/10.1063/1.1794354 (3 pages) | Cited 19 times

Online Publication Date: 24 September 2004

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Lead zirconate titanate (PZT) films were deposited on platinized silicon substrates by spin coating using PZT sols containing polyvinylpyrrolidone (PVP) as an additive. Single-layered 1-μm-thick PZT films with 60∕40 composition were fabricated using two successive spin coatings followed by a single heat treatment step. The crack formation was effectively suppressed by the presence of nanosized pores which were generated during the heat treatment. The film has a preferred orientation corresponding to the (100) crystallographic direction. The ferroelectric and piezoelectric properties of the specimen were comparable to those of a film with same composition and thickness but prepared by the conventional sol-gel procedure.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
77.80.Dj Domain structure; hysteresis
81.40.Gh Other heat and thermomechanical treatments
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
68.55.-a Thin film structure and morphology
77.22.Ej Polarization and depolarization
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
61.46.-w Structure of nanoscale materials
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Ferroelectricity of single-crystalline, monodisperse lead zirconate titanate nanoparticles of 9 nm in diameter

Kwang Soo Seol, Kazuo Takeuchi, and Yoshimichi Ohki

Appl. Phys. Lett. 85, 2325 (2004); http://dx.doi.org/10.1063/1.1794355 (3 pages) | Cited 9 times

Online Publication Date: 24 September 2004

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Ferroelectric hysteresis at approximately 20 °C is measured in a lead zirconate titanate film prepared by stacking monodisperse and perovskite particles 9 nm in diameter. The particle-stacked film possesses a remanent polarization of 4.5 μC∕cm2 and an apparent coercive field of 250 kV/cm. This result demonstrates that particulate lead zirconate titanate of 9 nm in diameter retains ferroelectricity even at room temperature.
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77.55.-g Dielectric thin films
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
84.32.Tt Capacitors
82.70.Rr Aerosols and foams
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology
68.55.A- Nucleation and growth
61.46.-w Structure of nanoscale materials
81.20.Rg Aerosols in materials synthesis and processing
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Thickness dependence of the ferroelectric PbTiO3 thin films on the dipolar relaxation in the microwave-frequency range

Yongjo Kim, Doyoung Lee, and Byungwoo Park

Appl. Phys. Lett. 85, 2328 (2004); http://dx.doi.org/10.1063/1.1794865 (3 pages) | Cited 5 times

Online Publication Date: 24 September 2004

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The effects of film thickness on the dipolar relaxation of ferroelectric PbTiO3 thin films were investigated in the microwave-frequency range. The real and imaginary dielectric constants (ε′–iε″) were measured up to 30 GHz using interdigital capacitors on high-quality SiO2. As the polycrystalline PbTiO3 film thickness increased from 42 to 407 nm, the dipolar-relaxation frequency reduced with increasing grain size. The observed relaxation behavior for ε′–iε″ was explained in terms of the convolution of Debye relaxation. The relaxation frequency in the thin films was higher than the previous values reported in bulk PbTiO3, due to the smaller grain size of the thin films.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
77.22.Gm Dielectric loss and relaxation
77.22.Ch Permittivity (dielectric function)
68.55.-a Thin film structure and morphology
78.70.Gq Microwave and radio-frequency interactions

A hydrothermally deposited epitaxial lead titanate thin film on strontium ruthenium oxide bottom electrode

Takeshi Morita and Yasuo Cho

Appl. Phys. Lett. 85, 2331 (2004); http://dx.doi.org/10.1063/1.1794867 (3 pages) | Cited 17 times

Online Publication Date: 24 September 2004

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A lead titanate epitaxial thin film was obtained on a strontium ruthenium oxide bottom electrode by the hydrothermal method. The reaction temperature was 150°C more than 400 degrees lower than that of the conventional deposition processes. X-ray diffraction measurements revealed a c-axis of orientation. The single-crystal-like DE hysteresis curve showed a remanent polarization of 96.5 μC∕cm2. The domain direction was controlled by an applied electric field using a metal-coated atomic force microcopy cantilever probe and the domain pattern was observed by scanning nonlinear dielectric microscopy. This investigation verified that this film did not contain an a-domain. In addition, no defects such as domain or grain boundaries were observed, even on the nanoscale.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization
61.72.Mm Grain and twin boundaries
68.37.Ps Atomic force microscopy (AFM)
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Microstructure and thermal stability of HfO2 gate dielectric deposited on Ge(100)

E. P. Gusev, H. Shang, M. Copel, M. Gribelyuk, C. D’Emic, P. Kozlowski, and T. Zabel

Appl. Phys. Lett. 85, 2334 (2004); http://dx.doi.org/10.1063/1.1794849 (3 pages) | Cited 50 times

Online Publication Date: 24 September 2004

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We report on physical and electrical characterization of ultrathin (3–10 nm) high-κ HfO2 gate stacks deposited on Ge(100) by atomic-layer deposition. It is observed that uniform films of HfO2 can be deposited on Ge without significant interfacial growth. The lack of an interlayer enables quasiepitaxial growth of HfO2 on the Ge surface after wet chemical treatment whereas a nitrided interface (grown by thermal oxynitridation in ammonia) results in an amorphous HfO2. The stacks exhibit surprisingly good thermal stability, up to temperatures only 150°C below the melting point of Ge. In terms of electrical properties, HfO2 on Ge shows significantly reduced (up to 4 decades) gate leakage currents in the ultrathin regime of equivalent electrical thickness down to ∼1.4 nm due to the high-dielectric constant of ∼23. Nitrided interface is observed to be important for good insulating properties of the stack.
Show PACS
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
68.55.A- Nucleation and growth
77.22.Ch Permittivity (dielectric function)
81.65.Lp Surface hardening: nitridation, carburization, carbonitridation
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
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