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27 Sep 2004

Volume 85, Issue 13, pp. 2451-2664

Issue Cover Spotlight Figure

Appl. Phys. Lett. 85, 2619 (2004); http://dx.doi.org/10.1063/1.1802384 (3 pages)

R. Basu, N. P. Guisinger, M. E. Greene, and M. C. Hersam
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Comment on “Interpretation of Fermi level pinning on 4H–SiC using synchrotron photoemission spectroscopy” [Appl. Phys. Lett. 84, 538 (2004)]

Yow-Jon Lin and Chih-Kuo Tseng

Appl. Phys. Lett. 85, 2661 (2004); http://dx.doi.org/10.1063/1.1795355 (2 pages) | Cited 1 time

Online Publication Date: 28 September 2004

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Abstract Unavailable
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71.20.Nr Semiconductor compounds
73.30.+y Surface double layers, Schottky barriers, and work functions
79.60.Bm Clean metal, semiconductor, and insulator surfaces
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Response to “Comment on ‘Interpretation of Fermi level pinning on 4H–SiC using synchrotron photoemission spectroscopy’ ” [Appl. Phys. Lett. 85, 2661 (2004)]

Sang Youn Han and Jong-Lam Lee

Appl. Phys. Lett. 85, 2663 (2004); http://dx.doi.org/10.1063/1.1795356 (2 pages)

Online Publication Date: 28 September 2004

Full Text: Read Online (HTML) | Download PDF

Abstract Unavailable
Show PACS
79.60.Bm Clean metal, semiconductor, and insulator surfaces
85.30.Hi Surface barrier, boundary, and point contact devices
85.30.Kk Junction diodes
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.30.+y Surface double layers, Schottky barriers, and work functions
71.55.Ht Other nonmetals
73.20.At Surface states, band structure, electron density of states
73.40.Ns Metal-nonmetal contacts
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