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27 Sep 2004

Volume 85, Issue 13, pp. 2451-2664

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Appl. Phys. Lett. 85, 2619 (2004); http://dx.doi.org/10.1063/1.1802384 (3 pages)

R. Basu, N. P. Guisinger, M. E. Greene, and M. C. Hersam
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Silicon optical nanocrystal memory

R. J. Walters, P. G. Kik, J. D. Casperson, H. A. Atwater, R. Lindstedt, M. Giorgi, and G. Bourianoff

Appl. Phys. Lett. 85, 2622 (2004); http://dx.doi.org/10.1063/1.1795364 (3 pages) | Cited 35 times

Online Publication Date: 28 September 2004

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We describe the operation of a silicon optical nanocrystal memory device. The programmed logic state of the device is read optically by the detection of high or low photoluminescence intensity. The suppression of excitonic photoluminescence is attributed to the onset of fast nonradiative Auger recombination in the presence of an excess charge carrier. The device can be programmed and erased electrically via charge injection and optically via internal photoemission. Photoluminescence suppression of up to 80% is demonstrated with data retention times of up to several minutes at room temperature.
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42.79.Vb Optical storage systems, optical disks
79.20.Fv Electron impact: Auger emission
78.55.Ap Elemental semiconductors
85.30.-z Semiconductor devices
42.70.Ln Holographic recording materials; optical storage media

Does the local built-in potential on grain boundaries of Cu(In,Ga)Se2 thin films benefit photovoltaic performance of the device?

C.-S Jiang, R. Noufi, K. Ramanathan, J. A. AbuShama, H. R. Moutinho, and M. M. Al-Jassim

Appl. Phys. Lett. 85, 2625 (2004); http://dx.doi.org/10.1063/1.1793346 (3 pages) | Cited 30 times

Online Publication Date: 28 September 2004

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In a previous paper [C.-S. Jiang et al., Appl. Phys. Lett. 84, 3477 (2004)], we reported the existence of a local built-in potential on grain boundaries (GBs) of photovoltaic Cu(In,Ga)Se2 (CIGS) thin films. However, whether the built-in potential benefits photovoltaic properties of the device has not been proven. Using a scanning Kelvin probe microscope, we found that, with increasing Ga content in the CIGS film, the built-in potential on the GB drops sharply in a Ga range of 28%–38%. Comparing the changes in the built-in potential, the device efficiency, and the CIGS band gap, we conclude that the built-in potential on the GB plays a significant role in the device conversion efficiency of NREL’s three-stage CIGS device.
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84.60.Jt Photoelectric conversion
68.55.-a Thin film structure and morphology
61.72.Mm Grain and twin boundaries
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Pz Photoconduction and photovoltaic effects
68.37.Ps Atomic force microscopy (AFM)

Engineering the quantum point contact response to single-electron charging in a few-electron quantum-dot circuit

L.-X. Zhang, J. P. Leburton, R. Hanson, and L. P. Kouwenhoven

Appl. Phys. Lett. 85, 2628 (2004); http://dx.doi.org/10.1063/1.1790605 (3 pages) | Cited 5 times

Online Publication Date: 28 September 2004

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We show that the design of a quantum point contact adjacent to a quantum dot can be optimized to produce maximum sensitivity to single-electron charging in the quantum dot. Our analysis is based on the self-consistent solution of coupled three-dimensional Kohn-Sham and Poisson equations for the quantum circuit. We predict a detection sensitivity increase by at least 73% over the conventional design.
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85.35.Gv Single electron devices
85.30.De Semiconductor-device characterization, design, and modeling

Postprocessing annealing effects on direct current and microwave performance of AlGaN∕GaN high electron mobility transistors

Jaesun Lee, Dongmin Liu, Hyeongnam Kim, and Wu Lu

Appl. Phys. Lett. 85, 2631 (2004); http://dx.doi.org/10.1063/1.1797556 (3 pages) | Cited 10 times

Online Publication Date: 28 September 2004

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The effects of postprocessing annealing on direct current, radio frequency small signal, and power performances of AlGaN∕GaN high electron mobility transistors with a gate-length of 0.2 μm were investigated. The postannealing technique can improve the device performance, especially, after 10 min postannealing at 400 °C, the gate-to-drain breakdown voltage of devices exhibits remarkable improvement from 25 to 187 V. The maximum extrinsic transconductance increases from 223 to 233 mS∕mm at a drain bias of 10 V after 10 min annealing at 400 °C. The maximum drain current at a gate bias of 1 V increases from 823 to 956 mA∕mm. After annealing, the values of the unity current gain cut-off frequency and the maximum oscillation frequency increases from 24 and 80 GHz to 55 and 150 GHz, respectively. The output power and gain at 10 GHz were improved from 16.4 dBm and 11.4 dB to 25.9 dBm and 19 dB, respectively.
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85.30.Tv Field effect devices
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.30.+q High-frequency effects; plasma effects
61.72.Cc Kinetics of defect formation and annealing
81.40.Gh Other heat and thermomechanical treatments

Enhanced back reflectance and quantum efficiency in Cu(In,Ga)Se2 thin film solar cells with a ZrN back reflector

Jonas Malmström, Sebastian Schleussner, and Lars Stolt

Appl. Phys. Lett. 85, 2634 (2004); http://dx.doi.org/10.1063/1.1794860 (3 pages) | Cited 10 times

Online Publication Date: 28 September 2004

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A reactively sputtered ZrN reflector layer on top of the conventional Mo back contact yields enhanced absorber/back contact reflectance in Cu(In,Ga)Se2 thin film solar cells. Improved long wavelength quantum efficiency is demonstrated with a ZrN reflector at a Cu(In,Ga)Se2 thickness of 0.5 μm. The optical gain with respect to a standard Mo back contact is initially offset by increased back contact recombination and contact resistance, but these electronic losses can be suppressed by Ga grading of the absorber or by inclusion of a contact layer of MoSe2. This allows for a significantly improved power conversion efficiency of devices with sub-micron Cu(In,Ga)Se2 thickness.
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84.60.Jt Photoelectric conversion
73.40.Cg Contact resistance, contact potential
73.61.Le Other inorganic semiconductors
78.66.Li Other semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.20.Ek Optical activity
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