APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

27 Sep 2004

Volume 85, Issue 13, pp. 2451-2664

Issue Cover Spotlight Figure

Appl. Phys. Lett. 85, 2619 (2004); http://dx.doi.org/10.1063/1.1802384 (3 pages)

R. Basu, N. P. Guisinger, M. E. Greene, and M. C. Hersam
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Epitaxial BiFeO3 thin films on Si

J. Wang, H. Zheng, Z. Ma, S. Prasertchoung, M. Wuttig, R. Droopad, J. Yu, K. Eisenbeiser, and R. Ramesh

Appl. Phys. Lett. 85, 2574 (2004); http://dx.doi.org/10.1063/1.1799234 (3 pages) | Cited 62 times

Online Publication Date: 28 September 2004

Full Text: Read Online (HTML) | Download PDF

Show Abstract
BiFeO3 was studied as an alternative environmentally clean ferro/piezoelectric material. 200-nm-thick BiFeO3 films were grown on Si substrates with SrTiO3 as a template layer and SrRuO3 as bottom electrode. X-ray and transmission electron microscopy studies confirmed the epitaxial growth of the films. The spontaneous polarization of the films was ∼45 μC∕cm2. Retention measurement up to several days showed no decay of polarization. A piezoelectric coefficient (d33) of ∼60 pm∕V was observed, which is promising for applications in micro-electro-mechanical systems and actuators.
Show PACS
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
68.55.A- Nucleation and growth
77.22.Ch Permittivity (dielectric function)
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization
77.65.-j Piezoelectricity and electromechanical effects
81.15.Fg Pulsed laser ablation deposition
68.37.Lp Transmission electron microscopy (TEM)

Hydrogen-induced defects and degradation in oxide ferroelectrics

K. Xiong and J. Robertson

Appl. Phys. Lett. 85, 2577 (2004); http://dx.doi.org/10.1063/1.1795975 (3 pages) | Cited 16 times

Online Publication Date: 28 September 2004

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We investigate hydrogen-induced defects in BaTiO3, PbTiO3, PbZrO3, and strontium bismuth tantalate (SBT). We find that interstitial hydrogen produces a shallow level and OH− ions leading to loss of switchable polarization if the oxide’s band gap is under about 4.2 eV, but hydrogen is deep in wide gap compounds like BaZrO3. In SBT, hydrogen is more stable in the Bi–O layer.
Show PACS
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
61.72.J- Point defects and defect clusters
77.80.-e Ferroelectricity and antiferroelectricity
77.22.Ej Polarization and depolarization
71.20.Ps Other inorganic compounds
71.55.Ht Other nonmetals

Micropatterned epitaxial (Pb,La)(Zr,Ti)O3 thin films on Nb-doped SrTiO3 substrates by a chemical solution deposition process with resist molds

Tsuyoshi Aoki, Makoto Kuwabara, Masao Kondo, Mineharu Tsukada, Kazuaki Kurihara, and Nobuo Kamehara

Appl. Phys. Lett. 85, 2580 (2004); http://dx.doi.org/10.1063/1.1800271 (3 pages) | Cited 11 times

Online Publication Date: 28 September 2004

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Arrays of lead lanthanum zirconate titanate pillars were fabricated on niobium-doped (001) strontium titanate substrates using a chemical solution deposition method with resist molds. Periodic arrays of submicron ferroelectric pillars with high crystallinity are required to produce high-quality tunable photonic-crystal devices. The relationship between the crystallinity and width of the pillars was investigated. The highest crystallinity was obtained at a width of 0.67 μm. All the pillars exhibited ferroelectric strain. Since this width is in the order of that of optical wavelengths, this process and the periodic structures produced have potential applications in fabricating two-dimensional tunable photonic crystals.
Show PACS
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
77.80.Dj Domain structure; hysteresis
68.60.Bs Mechanical and acoustical properties
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Gas phase chlorination of hydrogen-passivated silicon surfaces

Sandrine Rivillon, Fabrice Amy, Yves J. Chabal, and Martin M. Frank

Appl. Phys. Lett. 85, 2583 (2004); http://dx.doi.org/10.1063/1.1796536 (3 pages) | Cited 15 times

Online Publication Date: 28 September 2004

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A simple method is described to functionalize hydrogen-passivated Si(111) and Si(100) surfaces with chlorine (Cl2) gas. Infrared-absorption spectroscopy provides a positive identification of chlorination and mechanistic information on the chlorination of H-terminated Si surfaces, and on the structure and stability of chlorine-terminated Si surfaces (Cl∕Si). We find that the chlorination process does not change the surface morphology: H∕Si(111)‐(1×1) surfaces and HF-etched Si(100) surfaces remain atomically flat and atomically rough, respectively, upon chlorination. Chlorinated S: surfaces are stable in a nitrogen atmosphere for over 12 hours.
Show PACS
81.05.Cy Elemental semiconductors
68.47.Fg Semiconductor surfaces
81.65.Rv Passivation
68.35.B- Structure of clean surfaces (and surface reconstruction)
78.30.Am Elemental semiconductors and insulators

Anisotropic dielectric properties in epitaxial Bi3.25La0.75Ti3O12 thin films along different crystal directions

Jang-Sik Lee, B. S. Kang, Y. Lin, Y. Li, and Q. X. Jia

Appl. Phys. Lett. 85, 2586 (2004); http://dx.doi.org/10.1063/1.1797536 (3 pages) | Cited 6 times

Online Publication Date: 28 September 2004

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Epitaxial (001)-oriented Bi3.25La0.75Ti3O12 (BLT) thin films were grown by pulsed-laser deposition on (001) LaAlO3 single-crystal substrates. The dielectric properties of the BLT films are highly anisotropic along different crystal directions. The dielectric constants are 358 and 160 along [100] and [1math0], respectively. Dielectric nonlinearity is also detected along these crystal directions. On the other hand, a much smaller dielectric constant and no detectable dielectric nonlinearity in a field range of 0–200 kV∕cm are observed for a film along [001] where c-axis oriented SrRuO3 is used as the bottom electrode.
Show PACS
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)
68.55.-a Thin film structure and morphology
73.40.Rw Metal-insulator-metal structures
81.15.Fg Pulsed laser ablation deposition
84.32.Tt Capacitors
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close