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4 Oct 2004

Volume 85, Issue 14, pp. 2679-2983

Issue Cover Spotlight Figure

Appl. Phys. Lett. 85, 2860 (2004); http://dx.doi.org/10.1063/1.1799245 (3 pages)

Priya Mahadevan and Alex Zunger
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High-sensitivity laser-based acoustic microscopy using a modulated excitation source

T. W. Murray and O. Balogun

Appl. Phys. Lett. 85, 2974 (2004); http://dx.doi.org/10.1063/1.1802387 (3 pages) | Cited 17 times

Online Publication Date: 14 October 2004

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A laser-based acoustic microscopy system has been developed that uses an amplified electroabsorption modulated diode laser for narrow bandwidth acoustic wave generation at frequencies up to 200 MHz. The detection bandwidth reduction afforded by this technique allows for a significant improvement in signal-to-noise ratio over systems using pulsed-laser excitation and broadband detection. Femtometer range displacement sensitivity is demonstrated, allowing for materials characterization with only minimal surface heating. The source modulation frequency is scanned over the bandwidth of interest and the transient response of the specimen is reconstructed from the frequency domain data. This signal processing approach allows for easy identification of individual acoustic arrivals or multiple acoustic modes.
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43.58.Ls Acoustical lenses and microscopes
43.35.Ud Thermoacoustics, high temperature acoustics, photoacoustic effect

High-power-density spot cooling using bulk thermoelectrics

Yan Zhang, Ali Shakouri, and Gehong Zeng

Appl. Phys. Lett. 85, 2977 (2004); http://dx.doi.org/10.1063/1.1800290 (3 pages) | Cited 14 times

Online Publication Date: 14 October 2004

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We demonstrate a three-dimensional (3D) bulk silicon microcooler, which has the advantages of high cooling power densities and is less dependent on thermoelectric element’s thickness as compared with the same device with one-dimensional (1D) geometry. We measured a maximum cooling of 1.2 °C for a 40×40 μm2 area bulk silicon microcooler device, which is equivalent to an estimated cooling power density of 580 W∕cm2. In this unique geometry, both current and heat spreading in 3D allows the maximum cooling temperature to exceed the conventional 1D thermoelectric model’s theoretical limit 0.5 ZTc2.
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85.80.Fi Thermoelectric devices
72.20.Pa Thermoelectric and thermomagnetic effects
85.30.De Semiconductor-device characterization, design, and modeling

Atom chips: Fabrication and thermal properties

S. Groth, P. Krüger, S. Wildermuth, R. Folman, T. Fernholz, J. Schmiedmayer, D. Mahalu, and I. Bar-Joseph

Appl. Phys. Lett. 85, 2980 (2004); http://dx.doi.org/10.1063/1.1804601 (3 pages) | Cited 57 times

Online Publication Date: 14 October 2004

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Neutral atoms can be trapped and manipulated with surface mounted microscopic current carrying and charged structures. We present a lithographic fabrication process for such atom chips based on evaporated metal films. The size limit of this process is below 1 μm. At room temperature, thin wires can carry current densities of more than 107 A∕cm2 and voltages of more than 500 V. Extensive test measurements for different substrates and metal thicknesses (up to 5 μm) are compared to models for the heating characteristics of the microscopic wires. Among the materials tested, we find that Si is the best suited substrate for atom chips.
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81.05.Bx Metals, semimetals, and alloys
81.16.Ta Atom manipulation
72.15.Eb Electrical and thermal conduction in crystalline metals and alloys
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
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