Hydrogen and deuterium incorporation and transport in hafnium-based dielectric films on silicon

Pezzi, R. P.; Miotti, L.; Bastos, K. P.; Soares, G. V.; Driemeier, C.; Baumvol, I. J. R.; Punchaipetch, P.; Pant, G.; Gnade, B. E.; Wallace, R. M.; Rotondaro, A.; Visokay, J. M.; Chambers, J. J.; Colombo, L.

doi:doi:10.1063/1.1801682

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Using the surface spontaneous depolarization field of ferroelectrics to direct the assembly of virus particles

Tobacco mosaic virus (TMV) particles have been assembled at predetermined locations on the surface of a ferroelectric thin film with the composition PbZr0.3Ti0.7O3. The domain structure, hence the surface depolarization field for the ferroelectric associated with the bending of the ferroelectric band structure, was modified at length scales of around 2 μm. A suspension of TMV particles was deposited onto the surface of the ferroelectric over the region where domain modification had been performe...

Field-effect transistors with LaAlO₃ and LaAlO_xN_y gate dielectrics deposited by laser molecular-beam epitaxy

High permittivity LaAlO3 (LAO) and LaAlOxNy (LAON) thin films have been deposited directly on a Si(100) substrate using a laser molecular-beam epitaxy technique. Metal–oxide–silicon field-effect transistors (MOSFETs) are fabricated using such LAO and LAON thin films as gate dielectrics and well-behaved transistor characteristics have been observed. High-resolution transmission electron microscopy observations indicate that LAO thin films can remain amorphous structure even after annealing at 100...

Hydrogen and deuterium incorporation into nitrided and non-nitrided hafnium silicate films on Si during thermal annealing in ¹H- and ²H-containing atmospheres was investigated. ¹H profiling was accessed by means of nuclear resonant reaction profiling, whereas ²H incorporation was quantified by nuclear reaction analysis. The effects of preannealing in different atmospheres and temperatures were determined, as well as the losses of ¹H and ²H from these structures during postannealing in vacuum. The results reveal a rather uniform depth distribution of incorporated ¹H, in striking contrast with previous studies on hydrogen in silicon oxide and oxynitrides and hafnium oxide films on Si. These results are discussed in terms of the defects present in each one of the structures studied here.