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Applied Physics Letters / Volume 85 / Issue 16 / APPLIED BIOPHYSICS

Appl. Phys. Lett. 85, 3623 (2004); doi:10.1063/1.1807009 (3 pages)

Mechanism of apatite formation on hydrogen plasma-implanted single-crystal silicon

Xuanyong Liu1, Ricky K. Y. Fu1, Paul K. Chu1, and Chuanxian Ding2

1Department of Physics & Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong
2Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China

(Received 15 April 2004; accepted 19 August 2004)

Hydrogen is implanted into single-crystal silicon wafers using plasma ion immersion implantation to improve the surface bioactivity and the mechanism of apatite formation is investigated. Our micro-Raman and transmission electron microscopy results reveal the presence of a disordered silicon surface containing Si–H bonds after hydrogen implantation. When the sample is immersed in a simulated body fluid, the Si–H bonds on the silicon wafer initially react with water to produce a negatively charged surface containing the functional group (�Si–O−) that subsequently induces the formation of apatite. A good understanding of the formation mechanism of apatite on hydrogen implanted silicon is not only important from the viewpoint of biophysics but also vital to the actual use of silicon-based microchips and MEMS inside a human body.

© 2004 American Institute of Physics

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KEYWORDS and PACS

Keywords

silicon, hydrogen, plasma immersion ion implantation, biophysics, Raman spectra, transmission electron microscopy, elemental semiconductors, amorphous semiconductors, bonds (chemical), minerals, calcium compounds, surface chemistry

PACS

  • 52.77.Dq

    Plasma-based ion implantation and deposition

  • 68.37.Lp

    Transmission electron microscopy (TEM)

  • 78.35.+c

    Brillouin and Rayleigh scattering; other light scattering

  • 87.85.J-

    Biomaterials

  • 61.72.uf

    Ge and Si

  • 78.66.Db

    Elemental semiconductors and insulators

  • 82.45.Jn

    Surface structure, reactivity and catalysis

ARTICLE DATA

Permalink
http://link.aip.org/link/doi/10.1063/1.1807009

PUBLICATION DATA

ISSN:

0003-6951 (print)  
1077-3118 (online)

Publisher:

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    P. K. Chu, B. Y. Tang, Y. C. Cheng, and P. K. Ko, Rev. Sci. Instrum. 68, 1866 (1997)RSINAK000068000004001866000001.

    P. K. Chu, B. Y. Tang, L. P. Wang, X. F. Wang, S. Y. Wang, and N. Huang, Rev. Sci. Instrum. 72, 1660 (2001)RSINAK000072000003001660000001.

    L. W. Wang, R. K. Y. Fu, X. C. Zeng, P. K. Chu, W. Y. Cheung, and S. P. Wong, J. Appl. Phys. 90, 1735 (2001)JAPIAU000090000004001735000001.


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