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18 Oct 2004

Volume 85, Issue 16, pp. 3343-3639

Issue Cover Spotlight Figure

Appl. Phys. Lett. 85, 3570 (2004); http://dx.doi.org/10.1063/1.1807953 (2 pages)

X. N. Zhang, C. R. Li, Z. Zhang, and Z. X. Cao
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Mechanism of apatite formation on hydrogen plasma-implanted single-crystal silicon

Xuanyong Liu, Ricky K. Y. Fu, Paul K. Chu, and Chuanxian Ding

Appl. Phys. Lett. 85, 3623 (2004); http://dx.doi.org/10.1063/1.1807009 (3 pages) | Cited 8 times

Online Publication Date: 22 October 2004

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Hydrogen is implanted into single-crystal silicon wafers using plasma ion immersion implantation to improve the surface bioactivity and the mechanism of apatite formation is investigated. Our micro-Raman and transmission electron microscopy results reveal the presence of a disordered silicon surface containing Si–H bonds after hydrogen implantation. When the sample is immersed in a simulated body fluid, the Si–H bonds on the silicon wafer initially react with water to produce a negatively charged surface containing the functional group (�Si–O−) that subsequently induces the formation of apatite. A good understanding of the formation mechanism of apatite on hydrogen implanted silicon is not only important from the viewpoint of biophysics but also vital to the actual use of silicon-based microchips and MEMS inside a human body.
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52.77.Dq Plasma-based ion implantation and deposition
68.37.Lp Transmission electron microscopy (TEM)
78.35.+c Brillouin and Rayleigh scattering; other light scattering
87.85.J- Biomaterials
61.72.uf Ge and Si
78.66.Db Elemental semiconductors and insulators
82.45.Jn Surface structure, reactivity and catalysis

Fabrication and characterization of a biologically sensitive field-effect transistor using a nanocrystalline diamond thin film

Wensha Yang and Robert J. Hamers

Appl. Phys. Lett. 85, 3626 (2004); http://dx.doi.org/10.1063/1.1808885 (3 pages) | Cited 38 times

Online Publication Date: 22 October 2004

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We report the fabrication and characterization of a biologically sensitive field-effect transistor (Bio-FET) using a nanocrystalline diamond thin film. Biomolecular recognition capability was provided by linking human immunoglobulin G (IgG) to the diamond surface. Electrical measurements reveal behavior characteristic of field-effect transistors. The biomolecular recognition and specificity characteristics were tested using the two antibodies anti IgM and anti-IgG. Electrical measurements show that the Bio-FET device made on an IgG-modified diamond exhibits a response specific to the anti-IgG antibody. Our results demonstrate the ability to fabricate a bio-FET device using a biologically modified diamond thin film.
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81.05.Cy Elemental semiconductors
81.07.Bc Nanocrystalline materials
85.30.Tv Field effect devices
85.65.+h Molecular electronic devices
73.61.Cw Elemental semiconductors
73.61.Ph Polymers; organic compounds
61.46.-w Structure of nanoscale materials
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
87.15.-v Biomolecules: structure and physical properties
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