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18 Oct 2004

Volume 85, Issue 16, pp. 3343-3639

Issue Cover Spotlight Figure

Appl. Phys. Lett. 85, 3570 (2004); http://dx.doi.org/10.1063/1.1807953 (2 pages)

X. N. Zhang, C. R. Li, Z. Zhang, and Z. X. Cao
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Spontaneous polarization change with Zr∕(Zr+Ti) ratios in perfectly polar-axis-orientated epitaxial tetragonal Pb(Zr,Ti)O3 films

Hitoshi Morioka, Shintaro Yokoyama, Takahiro Oikawa, Hiroshi Funakubo, and Keisuke Saito

Appl. Phys. Lett. 85, 3516 (2004); http://dx.doi.org/10.1063/1.1795357 (3 pages) | Cited 27 times

Online Publication Date: 22 October 2004

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Epitaxial Pb(Zr,Ti)O3 (PZT) films 50 and 250 nm thick with the Zr∕(Zr+Ti) ratio from 0.13 to 0.65 were grown on (100)cSrRuO3∕∕(100)SrTiO3 substrates at 540 °C by pulsed-metalorganic chemical vapor deposition. The crystal orientation, lattice parameter, axial angle, and relative volume fraction of constituent domains were determined by high-resolution x-ray diffraction reciprocal space mapping. We grew (100) and∕or (001)-oriented epitaxial PZT films for the whole Zr∕(Zr+Ti) ratio. A tetragonal single phase was obtained for the Zr∕(Zr+Ti) ratio ranging from 0.13 to 0.54 and 0.19 to 0.45 with the 50 and 250 nm thick films, respectively, while mixed phases of a tetragonal and rhombohedral from 0.45 to 0.60 for the 250 nm thick films was obtained. For the films consisting of a tetragonal single phase, lattice parameters of a- and c-axes and their ratio (c∕a) were almost the same as the reported data for the PZT powder, suggesting a small amount of residual strain in them. In addition, perfectly polar-axis (c-axis)-oriented tetragonal films were obtained for the 50 nm thick films, while an ∼70% c-axis-orientation for the 250 nm thick ones was obtained. Polarization–electric-field hysteresis loops with a good square shape were observed for all films. Also, spontaneous polarization (Ps) values that were directly measured for the 50 nm thick films and estimated for the 250 nm thick films taking into account the volume fraction of the polar-axis-orientated domain were closely in line with the Zr∕(Zr+Ti) ratio, and they decreased as the ratio increased. The square of the estimated Ps was found to be proportional to the crystal distortion, c∕a−1. These results are essential not only for understanding the origin of the large Ps of PZT but for the property design of the ferroelectric devices using PZT.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ej Polarization and depolarization
77.80.Dj Domain structure; hysteresis
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

High piezoelectric response in polar-axis-oriented CaBi4Ti4O15 ferroelectric thin films

Desheng Fu, Kazuyuki Suzuki, and Kazumi Kato

Appl. Phys. Lett. 85, 3519 (2004); http://dx.doi.org/10.1063/1.1807010 (3 pages) | Cited 10 times

Online Publication Date: 22 October 2004

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We report on the piezoelectric properties of polar-axis-oriented CaBi4Ti4O15 films detected by atomic force microscope (AFM). The sol-gel-derived films onto Pt foil show excellent switching properties, and can be uniformly polarized over large areas with a conductive AFM tip. The films have an extremely high piezoelectric coefficient of d33, and a value of 180 pm∕V has been detected. These results indicate that the oriented bismuth-layered films can be used as the lead-free piezoelectrics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.65.Bn Piezoelectric and electrostrictive constants
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization
77.80.Fm Switching phenomena
68.37.Ps Atomic force microscopy (AFM)
68.55.A- Nucleation and growth

Ba0.5Sr0.5TiO3–Bi1.5Zn1.0Nb1.5O7 composite thin films with promising microwave dielectric properties for microwave device applications

L. Yan, L. B. Kong, L. F. Chen, K. B. Chong, C. Y. Tan, and C. K. Ong

Appl. Phys. Lett. 85, 3522 (2004); http://dx.doi.org/10.1063/1.1785861 (3 pages) | Cited 14 times

Online Publication Date: 22 October 2004

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Crack-free, dense, and uniform Ba0.5Sr0.5TiO3(BST)–Bi1.5Zn1.0Nb1.5O7(BZN) composite thin films were deposited on (100) LaAlO3, (100) SrTiO3, and (100) MgO substrates via a pulsed laser deposition, using a combined target of BST and BZN ceramics. Phase composition and microstructure of the BST-BZN thin films were characterized by x-ray diffraction and scanning electron microscopy. The films, on LAO, STO, and MgO substrates, showed zero-field microwave (∼7.7 GHz) dielectric constants of 471, 435, and 401, dielectric loss tangents of 0.0048, 0.0043, and 0.0037, and dielectric tunabilities of 6.2%, 6.0%, and 5.7% at ∼8.1 kV∕cm, respectively. The good physical and electrical properties of the BST–BZN composite thin films make them promising candidates for microwave device applications.
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81.15.Fg Pulsed laser ablation deposition
77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
77.55.-g Dielectric thin films
61.66.Bi Elemental solids
61.66.Dk Alloys
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation

The characteristics of hole trapping in HfO2∕SiO2 gate dielectrics with TiN gate electrode

Wen-Tai Lu, Po-Ching Lin, Tiao-Yuan Huang, Chao-Hsin Chien, Ming-Jui Yang, Ing-Jyi Huang, and Peer Lehnen

Appl. Phys. Lett. 85, 3525 (2004); http://dx.doi.org/10.1063/1.1808228 (3 pages) | Cited 15 times

Online Publication Date: 22 October 2004

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The characteristics of charge trapping during constant voltage stress in an n-type metal–oxide–semiconductor capacitor with HfO2∕SiO2 gate stack and TiN gate electrode were studied. We found that the dominant charge trapping mechanism in the high-k gate stack is hole trapping rather than electron trapping. This behavior can be well described by the distributed capture cross-section model. In particular, the flatband voltage shift (ΔVfb) is mainly caused by the trap filling instead of the trap creation [Zafar et al., J. Appl. Phys. 93, 9298 (2003)]. The dominant hole trapping can be ascribed to a higher probability for hole tunneling from the substrate, compared to electron tunneling from the gate, due to a shorter tunneling path over the barrier for holes due to the work function of the TiN gate electrode.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
84.32.Tt Capacitors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Ferroelectric nanomesa formation from polymer Langmuir–Blodgett films

Mengjun Bai and Stephen Ducharme

Appl. Phys. Lett. 85, 3528 (2004); http://dx.doi.org/10.1063/1.1808251 (3 pages) | Cited 21 times

Online Publication Date: 22 October 2004

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We report the fabrication and characterization of nanoscale ferroelectric structures consisting of disk-shaped nanomesas averaging 8.7±0.4 nm in height and 95±22 nm in diameter, and nanowells 9.8±3.3 nm in depth and 128±37 nm in diameter, formed from Langmuir–Blodgett films of vinylidene fluoride copolymers after annealing in the paraelectric phase. The nanomesas retain the ferroelectric properties of the bulk material and so may be suitable for use in high-density nonvolatile random-access memories, acoustic transducer arrays, or infrared imaging arrays. The nanomesa and nanowell patterns may provide useful templates for nanoscale molding or contact-printing.
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77.84.Jd Polymers; organic compounds
81.07.Bc Nanocrystalline materials
68.47.Pe Langmuir-Blodgett films on solids; polymers on surfaces; biological molecules on surfaces
68.55.A- Nucleation and growth
77.80.B- Phase transitions and Curie point
77.80.Dj Domain structure; hysteresis
77.70.+a Pyroelectric and electrocaloric effects
81.40.Gh Other heat and thermomechanical treatments
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Phonon-polaritons in quasiperiodic piezoelectric superlattices

Xue-jin Zhang, Yan-qing Lu, Yong-yuan Zhu, Yan-feng Chen, and Shi-ning Zhu

Appl. Phys. Lett. 85, 3531 (2004); http://dx.doi.org/10.1063/1.1803939 (3 pages) | Cited 11 times

Online Publication Date: 22 October 2004

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Phonon-polaritons are studied both theoretically and experimentally in a one-dimensional two-component generalized quasiperiodic piezoelectric superlattice. The experimental observation of phonon-polaritons through dielectric abnormality is carried out at the microwave region. Some potential applications are discussed.
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63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
77.65.Bn Piezoelectric and electrostrictive constants
77.80.Dj Domain structure; hysteresis

A strong magnetoelectric voltage gain effect in magnetostrictive-piezoelectric composite

Shuxiang Dong, J. F. Li, D. Viehland, J. Cheng, and L. E. Cross

Appl. Phys. Lett. 85, 3534 (2004); http://dx.doi.org/10.1063/1.1786631 (3 pages) | Cited 60 times

Online Publication Date: 22 October 2004

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A magnetoelectric laminate composite consisting of magnetostrictive Terfenol-D (Tb1–xDyxFe2–y) and piezoelectric Pb(Zr,Ti)O3 layers has an extremely high voltage gain effect of ≈300 at its resonant state, offering potential for high-voltage miniature transformer applications.
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75.80.+q Magnetomechanical effects, magnetostriction
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.65.-j Piezoelectricity and electromechanical effects
84.30.Jc Power electronics; power supply circuits
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
77.84.Lf Composite materials

Using the surface spontaneous depolarization field of ferroelectrics to direct the assembly of virus particles

Steve Dunn, Dave Cullen, Estefania Abad-Garcia, Cristina Bertoni, Richard Carter, Dave Howorth, and Roger W. Whatmore

Appl. Phys. Lett. 85, 3537 (2004); http://dx.doi.org/10.1063/1.1797535 (3 pages) | Cited 23 times

Online Publication Date: 22 October 2004

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Tobacco mosaic virus (TMV) particles have been assembled at predetermined locations on the surface of a ferroelectric thin film with the composition PbZr0.3Ti0.7O3. The domain structure, hence the surface depolarization field for the ferroelectric associated with the bending of the ferroelectric band structure, was modified at length scales of around 2 μm. A suspension of TMV particles was deposited onto the surface of the ferroelectric over the region where domain modification had been performed. SPM images (intermittent contact) revealed that the virus particles were attracted to regions of the surface that had either been positively modified or were nominally neutral. Regions of modified negative surface charge effectively repelled the virus particles.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.22.Ej Polarization and depolarization
77.80.Dj Domain structure; hysteresis
85.65.+h Molecular electronic devices
77.84.Nh Liquids, emulsions, and suspensions; liquid crystals
82.70.Kj Emulsions and suspensions

Hydrogen and deuterium incorporation and transport in hafnium-based dielectric films on silicon

R. P. Pezzi, L. Miotti, K. P. Bastos, G. V. Soares, C. Driemeier, I. J. R. Baumvol, P. Punchaipetch, G. Pant, B. E. Gnade, R. M. Wallace, A. Rotondaro, J. M. Visokay, J. J. Chambers, and L. Colombo

Appl. Phys. Lett. 85, 3540 (2004); http://dx.doi.org/10.1063/1.1801682 (3 pages) | Cited 10 times

Online Publication Date: 22 October 2004

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Hydrogen and deuterium incorporation into nitrided and non-nitrided hafnium silicate films on Si during thermal annealing in 1H- and 2H-containing atmospheres was investigated. 1H profiling was accessed by means of nuclear resonant reaction profiling, whereas 2H incorporation was quantified by nuclear reaction analysis. The effects of preannealing in different atmospheres and temperatures were determined, as well as the losses of 1H and 2H from these structures during postannealing in vacuum. The results reveal a rather uniform depth distribution of incorporated 1H, in striking contrast with previous studies on hydrogen in silicon oxide and oxynitrides and hafnium oxide films on Si. These results are discussed in terms of the defects present in each one of the structures studied here.
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77.55.-g Dielectric thin films
61.72.Cc Kinetics of defect formation and annealing
76.60.-k Nuclear magnetic resonance and relaxation
81.15.Cd Deposition by sputtering
82.30.-b Specific chemical reactions; reaction mechanisms
81.40.Gh Other heat and thermomechanical treatments

Field-effect transistors with LaAlO3 and LaAlOxNy gate dielectrics deposited by laser molecular-beam epitaxy

X. B. Lu, H. B. Lu, Z. H. Chen, X. Zhang, R. Huang, H. W. Zhou, X. P. Wang, B. Y. Nguyen, C. Z. Wang, W. F. Xiang, M. He, and B. L. Cheng

Appl. Phys. Lett. 85, 3543 (2004); http://dx.doi.org/10.1063/1.1806547 (3 pages) | Cited 15 times

Online Publication Date: 22 October 2004

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High permittivity LaAlO3 (LAO) and LaAlOxNy (LAON) thin films have been deposited directly on a Si(100) substrate using a laser molecular-beam epitaxy technique. Metal–oxide–silicon field-effect transistors (MOSFETs) are fabricated using such LAO and LAON thin films as gate dielectrics and well-behaved transistor characteristics have been observed. High-resolution transmission electron microscopy observations indicate that LAO thin films can remain amorphous structure even after annealing at 1000°C. The small equivalent oxide thickness (EOT) of 17 math is achieved for 75 math LAO film with an effective dielectric constant of 17.2±1 for the whole gate stack. Furthermore, a smaller EOT, larger drive current, and lower subthreshold slope have been observed for devices with the LAON thin film. For all the devices, the gate leakage currents are at least two orders of magnitude lower than that of the same electrical thickness SiO2. Reasonable subthreshold slopes of 248 and 181 mV∕dec were obtained for MOSFETs with LAO and LAON films, respectively.
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85.30.Tv Field effect devices
77.22.Ch Permittivity (dielectric function)
77.55.-g Dielectric thin films
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
61.72.Cc Kinetics of defect formation and annealing
81.40.Gh Other heat and thermomechanical treatments
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.37.Lp Transmission electron microscopy (TEM)
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