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25 Oct 2004

Volume 85, Issue 17, pp. 3657-3939

Issue Cover Spotlight Figure

Appl. Phys. Lett. 85, 3851 (2004); http://dx.doi.org/10.1063/1.1808886 (3 pages)

P. Guha, S. Kar, and S. Chaudhuri
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Single-crystal Nb-doped Pb(Zr,Ti)O3 thin films on Nb-doped SrTiO3 wafers with different orientations

Wen Gong, Jing-Feng Li, Xiangcheng Chu, Zhilun Gui, and Longtu Li

Appl. Phys. Lett. 85, 3818 (2004); http://dx.doi.org/10.1063/1.1807965 (3 pages) | Cited 23 times

Online Publication Date: 29 October 2004

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Single-crystal Nb-doped Pb(Zr,Ti)O3 (PNZT) films were grown on electric conducting single-crystal Nb-doped SrTiO3 (Nb:STO) wafers by a sol-gel method. Although the films were of the same composition and prepared under the same condition, different crystal phases with corresponding preferential film orientations were formed when the substrate orientation was changed. [001]-oriented tetragonal PNZT film was formed on the {100} surface of the Nb:STO substrate, whereas [111]-oriented rhombohedral PNZT film on the {111} surface. The PNZT films on SrTiO3 substrates showed considerably high remnant polarization and low coercive field, as compared with conventional PZT films on Si wafers. In particular, high d33 value was obtained in the [001]-oriented PNZT films.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization
77.65.Bn Piezoelectric and electrostrictive constants
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Dielectric behavior of PbZr0.52Ti0.48O3 thin films: Intrinsic and extrinsic dielectric responses

Chen Ang and Zhi Yu

Appl. Phys. Lett. 85, 3821 (2004); http://dx.doi.org/10.1063/1.1808233 (3 pages) | Cited 10 times

Online Publication Date: 29 October 2004

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The dc electric-field (E) dependence of the dielectric constant (ε) in PbZr0.52Ti0.48O3 (PZT) thin films has been studied at cryogenic temperatures in the dc electric-field range of 0–820 kV∕cm. Significant suppression of ε is observed by an application of E up to 400 kV∕cm. The relation of ε versus E can be well described by the “multi-polarization mechanism” model, i.e., ε(E)=ε(0)∕[1+α ε(0)3E2]1∕3+(Pjxj∕ε0) [cosh(Exj)]−2. By this equation, the field dependence of the extrinsic dielectric response can be subtracted from the whole dielectric response. The results indicate that the analysis of the relation of ε versus E could be a way to separate the intrinsic and extrinsic contributions in PZT.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)
77.22.Ej Polarization and depolarization

Deposition of HfO2 on germanium and the impact of surface pretreatments

S. Van Elshocht, B. Brijs, M. Caymax, T. Conard, T. Chiarella, S. De Gendt, B. De Jaeger, S. Kubicek, M. Meuris, B. Onsia, O. Richard, I. Teerlinck, J. Van Steenbergen, C. Zhao, and M. Heyns

Appl. Phys. Lett. 85, 3824 (2004); http://dx.doi.org/10.1063/1.1810642 (3 pages) | Cited 51 times

Online Publication Date: 29 October 2004

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The deposition behavior of HfO2 by metalorganic chemical vapor deposition on germanium has been investigated. HfO2 films can be deposited on Ge with equally good quality as compared to high-k growth on silicon. Surface preparation is very important: compared to an HF-last, NH3 pretreatments result in smoother films with strongly reduced diffusion of germanium in the HfO2 film, resulting in a much better electrical performance. We clearly show that much thinner interfacial layers can be obtained, approximately half the thickness of what is typically found for depositions on silicon, suggesting the possibility of more aggressive equivalent oxide thickness∕leakage scaling.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.35.Ct Interface structure and roughness
68.37.Lp Transmission electron microscopy (TEM)
68.43.Jk Diffusion of adsorbates, kinetics of coarsening and aggregation
73.61.Ng Insulators

Dielectric behavior of electroactive fluorinate-based polymers under dc electric field

Zhi Yu and Chen Ang

Appl. Phys. Lett. 85, 3827 (2004); http://dx.doi.org/10.1063/1.1806541 (3 pages) | Cited 3 times

Online Publication Date: 29 October 2004

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The dielectric behavior in fluorinate-based polymers has been studied under a dc electric field of 0–72 V∕μm. The two overlapped anomalies Modes A (A′) and B in the dielectric constant are clearly revealed under dc bias. Mode A′ in the terpolymer behaves as a ferroelectric mode, whose peak temperature increases with increasing dc bias, and a macrodomain state is developed after the application of dc bias. The dominant Mode B exhibits a special polarization process with a characteristic of the peak temperature being unshifted with increasing dc bias.
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77.84.Jd Polymers; organic compounds
82.35.Jk Copolymers, phase transitions, structure
77.22.Ch Permittivity (dielectric function)
77.22.Ej Polarization and depolarization
77.22.Gm Dielectric loss and relaxation
77.80.Dj Domain structure; hysteresis

Ammonia pretreatment for high-κ dielectric growth on silicon

R. T. Brewer, M.-T. Ho, K. Z. Zhang, L. V. Goncharova, D. G. Starodub, T. Gustafsson, Y. J. Chabal, and N. Moumen

Appl. Phys. Lett. 85, 3830 (2004); http://dx.doi.org/10.1063/1.1807024 (3 pages) | Cited 15 times

Online Publication Date: 29 October 2004

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Thermal nitridation of H∕Si(100) surfaces with NH3 gas has been studied as a pretreatment for atomic layer deposition of Al2O3. The chemical nature of both the nitride interface and the Al2O3 growth was characterized using in situ transmission infrared spectroscopy and medium energy ion scattering. Nitride layers thicker than 3–4 math provide an effective barrier against interfacial SiO2 formation and promote the nucleation of Al2O3 growth.
Show PACS
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
68.55.A- Nucleation and growth
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.65.Lp Surface hardening: nitridation, carburization, carbonitridation
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
78.30.Hv Other nonmetallic inorganics
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