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1 Nov 2004

Volume 85, Issue 18, pp. 3959-4247

Issue Cover Spotlight Figure

Appl. Phys. Lett. 85, 4142 (2004); http://dx.doi.org/10.1063/1.1811774 (3 pages)

Hong Jin Fan, Roland Scholz, Florian M. Kolb, and Margit Zacharias
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Organic complementary-like inverters employing methanofullerene-based ambipolar field-effect transistors

Thomas D. Anthopoulos, Dago M. de Leeuw, Eugenio Cantatore, Sepas Setayesh, Eduard J. Meijer, Cristina Tanase, Jan C. Hummelen, and Paul W. M. Blom

Appl. Phys. Lett. 85, 4205 (2004); http://dx.doi.org/10.1063/1.1812577 (3 pages) | Cited 97 times

Online Publication Date: 3 November 2004

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We demonstrate a complementary-like inverter comprised of two identical ambipolar field-effect transistors based on the solution processable methanofullerene [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). The transistors are capable of operating in both the p- and n-channel regimes depending upon the bias conditions. However, in the p-channel regime transistor operation is severely contact limited. We attribute this to the presence of a large injection barrier for holes at the Au∕PCBM interface. Despite this barrier the inverter operates in both the first and third quadrant of the voltage output versus voltage input plot exhibiting a maximum gain in the order of 20. Since the inverter represents the basic building block of most logic circuits we anticipate that other complementary-like circuits can be realized by this approach.
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85.30.Tv Field effect devices
73.40.Cg Contact resistance, contact potential
84.30.Sk Pulse and digital circuits

Kinetic study of velocity distributions in nanoscale semiconductor devices under room-temperature operation

N. Sano

Appl. Phys. Lett. 85, 4208 (2004); http://dx.doi.org/10.1063/1.1812812 (3 pages) | Cited 7 times

Online Publication Date: 3 November 2004

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Quasiballistic electron transport in nanoscale semiconductor structures is investigated to clarify the importance of scatterings under room-temperature operation as reflected in the velocity distribution functions. The analyses are carried out for n+‐n‐n+ structures based on the semiclassical Boltzmann transport equation (BTE). It is shown that the number of electrons with negative velocity grows exponetially due to scatterings around the top of the electronic potential barrier in the channel region and, thus, the scatterings cannot be neglected even in nanoscale device structures. This is closely related to the mathematical structure of the BTE whose solution exhibits the boundary-layer structure.
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85.30.Kk Junction diodes
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
73.23.Ad Ballistic transport

A quantitative study of the relationship between the oxide charge trapping over the drain extension and the off-state drain leakage current

Jiayi Huang, T. P. Chen, C. H. Ang, S. Manju, and S. Fung

Appl. Phys. Lett. 85, 4211 (2004); http://dx.doi.org/10.1063/1.1810211 (3 pages)

Online Publication Date: 3 November 2004

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In this letter, we report an approach to quantitative study of the relationship between the oxide charge trapping over the drain extension due to electrical stress and the off-state drain leakage current. It is found that positive charge trapping over the drain extension leads to a significant increase in the off-state drain current if the edge direct tunneling (EDT) is dominant in the drain current but in contrast, it leads to a reduction in the drain current if the band-to-band tunneling in the Si surface is dominant. A quantitative relationship between the charge trapping and the off-state drain leakage current in the EDT regime is established. From the measurement of the off-state current in the EDT regime, the charge trapping can be determined by using the approach developed in this study.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.40.Gk Tunneling

AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistor with oxidized Ni as a gate insulator

C. S. Oh, C. J. Youn, G. M. Yang, K. Y. Lim, and J. W. Yang

Appl. Phys. Lett. 85, 4214 (2004); http://dx.doi.org/10.1063/1.1811793 (3 pages) | Cited 3 times

Online Publication Date: 3 November 2004

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We fabricated the AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistor (MOSHFET) using the oxidized Ni(NiO) as a gate oxide and compared electrical properties of this device with those of a conventional AlGaN∕GaN heterostructure field-effect transistor (HFET). NiO was prepared by oxidation of Ni metal of 100 math at 600 °C for 5 min in air ambient. For HFET and MOSHFET with a gate length of 1.2 μm, the maximum drain currents were about 800 mA∕mm and the maximum transconductances were 136 and 105 mS∕mm, respectively. As the oxidation temperature of Ni increased from 300 to 600 °C the gate leakage current decreased dramatically due to the formation of insulating NiO. The gate leakage current for the MOSHFET with the oxidized NiO at 600 °C was about four orders of magnitude smaller than that of the HFET. Based on the dc characteristics, NiO as a gate oxide is comparable with other gate oxides.
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85.30.Tv Field effect devices
81.65.Mq Oxidation
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Ey III-V semiconductors

Piezoelectric properties of lead-free CaBi4Ti4O15 thin films

Fumihito Arai, Kohei Motoo, Toshio Fukuda, and Kazumi Kato

Appl. Phys. Lett. 85, 4217 (2004); http://dx.doi.org/10.1063/1.1806555 (2 pages) | Cited 11 times

Online Publication Date: 3 November 2004

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CaBi4Ti4O15 (CBTi144) thin films are evaluated for use as lead-free thin-film piezoelectrics in microelectromechanical systems. CBTi144 thin films were prepared on Pt substrates by dip coating a precursor solution of metal alkoxides. We fabricated a piezoelectric bimorph actuator using those films and analyzed the displacement induced by the electric field. Young’s modulus was measured by the vibrating-reed technique and the piezoelectric constant d31 was derived by analysis of bending displacement and measurement of displacement-voltage curve. The measurements revealed that the CBTi144 films had a large piezoelectric constant d31 of 32 pm∕V.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
81.40.Lm Deformation, plasticity, and creep
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
62.20.F- Deformation and plasticity
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.D- Elasticity

Photoresponsivity of polymer thin-film transistors based on polyphenyleneethynylene derivative with improved hole injection

Yifan Xu, Paul R. Berger, James N. Wilson, and Uwe H. F. Bunz

Appl. Phys. Lett. 85, 4219 (2004); http://dx.doi.org/10.1063/1.1812834 (3 pages) | Cited 22 times

Online Publication Date: 3 November 2004

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The photoresponse of polymer field-effect transistors (PFETs) based on the 2,5-bis(dibutylaminostyryl)-1,4-phenylene-b-alkyne-b-1,4-bis(2-ethylhexyl)benzene terpolymer (BAS-PPE) is investigated. BAS-PPE is a photoluminescent conducting polymer with a band gap of 2.25 eV. The BAS-PPE PFETs were fabricated using an open coplanar configuration and light is illuminated onto the top side of the PFETs with no shadowing present. A sweep of VDS demonstrates that IDS saturation is suppressed during illumination, which suggests that pinch-off cannot be reached since the injected photogenerated carriers continue unabated. Also, with incident light, the channel cannot be turned off, even at high positive gate biases, due to the accumulation of photogenerated carriers. A sweep of VDS shows that BAS-PPE can act as a p-type polymer and favors hole injection and transport. A sweep of VGS shows an increase in IDS with different light intensities. The Ilight∕Idark ratio reaches as high as about 6000 at an incident light intensity of 4 μW and a photoresponsivity of 5 mA∕W is calculated.
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85.30.Tv Field effect devices
85.60.Dw Photodiodes; phototransistors; photoresistors
78.55.Kz Solid organic materials
78.66.Qn Polymers; organic compounds

Current-voltage characteristics of high-efficiency silicon solar cells from photoluminescence

L. Ferraioli, P. Maddalena, A. Parretta, A. Wang, and J. Zhao

Appl. Phys. Lett. 85, 4222 (2004); http://dx.doi.org/10.1063/1.1815375 (3 pages) | Cited 2 times

Online Publication Date: 3 November 2004

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Series resistance is a fundamental power-limiting factor for a solar cell. It is known to depend on the ohmic losses due to the metal contact resistance, the metal–semiconductor contact resistance, the substrate resistance, and the emitter sheet resistance. A typical operating approach consists of indirect measurements of the total series resistance. Our method, based on photoluminescence, is capable of generating an illuminated current–voltage curve free from the effect of the contact series resistance, giving an immediate idea of true cell performance.
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84.60.Jt Photoelectric conversion
73.40.Cg Contact resistance, contact potential
78.55.Ap Elemental semiconductors
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