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1 Nov 2004

Volume 85, Issue 18, pp. 3959-4247

Issue Cover Spotlight Figure

Appl. Phys. Lett. 85, 4142 (2004); http://dx.doi.org/10.1063/1.1811774 (3 pages)

Hong Jin Fan, Roland Scholz, Florian M. Kolb, and Margit Zacharias
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Continuous-wave ultraviolet generation at 354 nm in a periodically poled MgO:LiNbO3 by frequency tripling of a diode end-pumped Nd:GdVO4 microlaser

K. Mizuuchi, A. Morikawa, T. Sugita, K. Yamamoto, N. Pavel, and T. Taira

Appl. Phys. Lett. 85, 3959 (2004); http://dx.doi.org/10.1063/1.1810625 (3 pages) | Cited 1 time

Online Publication Date: 3 November 2004

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Continuous-wave UV radiation at 354 nm, the third harmonic of a Nd:GdVO4 laser operating at 1063 nm, is reported from single-pass cascaded, first-order periodically poled MgO:LiNbO3 (PPMgLN) crystals. A high-voltage multipulse poling method was used in order to realize PPMgLN with uniform domain period (Λ) of micron-order width and 50% duty cycle along the entire crystal length. Initially, second-harmonic generation of the 1063 nm Nd:GdVO4 laser at 2.1%∕W conversion efficiency, producing 1.15 W at 531 nm, is obtained from a 10-mm-long PPMgLN with Λ=6.95 μm. Sum frequency mixing of this 531 nm light with the residual 1063 nm fundamental radiation in a 3.6-mm-long PPMgLN with Λ=1.78 μm produces 47 mW of UV with 3.9%∕W∕cm normalized conversion efficiency.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Fabrication of self-written waveguide in photosensitive polyimide resin by controlling photochemical reaction of photosensitizer

K. Yamashita, T. Kuro, K. Oe, K. Mune, K. Tagawa, R. Naitou, and A. Mochizuki

Appl. Phys. Lett. 85, 3962 (2004); http://dx.doi.org/10.1063/1.1813627 (3 pages) | Cited 2 times

Online Publication Date: 3 November 2004

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We have investigated optical properties of photosensitive polyimide appropriating for long self-written waveguide fabrication. From systematic measurements of absorption properties, it was found that photochemical reaction of photosensitizer dissolved in the photosensitive polyimide resins relates to transparency after the exposure, which limits the length of the fabricated self-written waveguide. By controlling the photochemical reaction, in which the photosensitive polyimide resin has sufficient transparency during exposure, four times longer self-written waveguide core was fabricated.
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42.79.Gn Optical waveguides and couplers
42.70.Jk Polymers and organics
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.82.Cr Fabrication techniques; lithography, pattern transfer
82.50.Hp Processes caused by visible and UV light

Double resonance optical pumping spectrum and its application for frequency stabilization of a laser diode

H. S. Moon, W. K. Lee, L. Lee, and J. B. Kim

Appl. Phys. Lett. 85, 3965 (2004); http://dx.doi.org/10.1063/1.1813629 (3 pages) | Cited 18 times

Online Publication Date: 3 November 2004

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We present double resonance optical pumping (DROP) spectra for the 5P3∕2–4D3∕2 transition and the 5P3∕2–4D5∕2 transition of 87Rb and we use these spectra for frequency stabilization in the 1.5 μm region. The spectra, compared to the conventional double resonance spectrum, show a good signal-to-noise ratio and a narrow spectral linewidth for laser frequency stabilization. The different intensities of the hyperfine states were attributed to the different rates of double resonance optical pumping into the other ground state. When we stabilized the frequency of a 1.5 μm laser diode to the DROP spectrum, the best frequency stability was 1×10−11 after 100 s.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Towards plasmonic band gap laser

Takayuki Okamoto, Fekhra H’Dhili, and Satoshi Kawata

Appl. Phys. Lett. 85, 3968 (2004); http://dx.doi.org/10.1063/1.1814793 (3 pages) | Cited 45 times

Online Publication Date: 3 November 2004

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A two-dimensional periodically corrugated silver surface prohibits the propagation of the surface plasmons in all lateral directions. And band gaps are generated in the dispersion relation, named plasmonic band gaps. At the edge of this band gap, surface plasmons are laterally confined as standing waves. We investigate this phenomenon for lasing action by the use of a dye film deposited on a corrugated silver surface. Fluorescence of the dye was strongly enhanced. Indeed, we obtained an enhancement factor 150 for a methyl-red doped poly (methylmethacrylate) film and 3 for an evaporated 4-dicyanomethylene-2-methyl-6-p-dimethyl-aminostyryl-4H-pyran film. We also discuss the conditions under which lasing action may occur.
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42.55.Mv Dye lasers
42.70.Hj Laser materials
42.55.Tv Photonic crystal lasers and coherent effects
42.70.Qs Photonic bandgap materials
78.55.Kz Solid organic materials
78.68.+m Optical properties of surfaces
78.66.Qn Polymers; organic compounds
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

High-power and reliable operation of vertical light-emitting diodes on bulk GaN

X. A. Cao and S. D. Arthur

Appl. Phys. Lett. 85, 3971 (2004); http://dx.doi.org/10.1063/1.1810631 (3 pages) | Cited 30 times

Online Publication Date: 3 November 2004

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InGaN∕GaN light-emitting diodes (LEDs) with lateral and vertical geometries have been fabricated on free-standing GaN substrates. Current spreading was significantly enhanced in the vertical LED, leading to a reduced series resistance of 7 Ω compared to 12.2 and 14.2 Ω for the lateral LEDs on GaN and sapphire, respectively. As a result, the light output and power conversion efficiency of the vertical LED on GaN were greatly improved at high injection currents. The vertical LED was subjected to a stress test at 400 mA and showed minimal degradation of optical power, whereas the same stress resulted in the destruction of the lateral LED on sapphire due to increased current crowding and self-heating. However, lateral LEDs on sapphire with optimized current spreading exhibited excellent reliability, indicating the presence of a high density of dislocations (∼109 cm−2) in the heteroepitaxial device does not accelerate LED degradation at current densities up to 700 A∕cm2.
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85.60.Jb Light-emitting devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
73.63.Hs Quantum wells
78.67.De Quantum wells

Generation and detection of terahertz radiation by electro-optical process in GaAs using 1.56 μm fiber laser pulses

Masaya Nagai, Koichiro Tanaka, Hideyuki Ohtake, Toshiaki Bessho, Toshiharu Sugiura, Tomoya Hirosumi, and Makoto Yoshida

Appl. Phys. Lett. 85, 3974 (2004); http://dx.doi.org/10.1063/1.1813645 (3 pages) | Cited 41 times

Online Publication Date: 3 November 2004

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We report the generation and detection of a terahertz wave with a nonresonant electro-optical crystal using 1.56 μm femtosecond laser pulses. Using a 0.5-mm-thick (110)-oriented GaAs wafer for optical rectification and electro-optical modulation, we detected spectral sensitivity below 3 THz. We also estimated the availability of GaAs from the viewpoint of an electro-optical coefficient and phase match condition.
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78.20.Jq Electro-optical effects
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.47.-p Spectroscopy of solid state dynamics
07.57.Hm Infrared, submillimeter wave, microwave, and radiowave sources

Long-distance remote laser-induced breakdown spectroscopy using filamentation in air

Kamil Stelmaszczyk, Philipp Rohwetter, Guillaume Méjean, Jin Yu, Estelle Salmon, Jérôme Kasparian, Roland Ackermann, Jean-Pierre Wolf, and Ludger Wöste

Appl. Phys. Lett. 85, 3977 (2004); http://dx.doi.org/10.1063/1.1812843 (3 pages) | Cited 82 times

Online Publication Date: 3 November 2004

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We demonstrate remote elemental analysis at distances up to 90 m, using a laser-induced breakdown spectroscopy scheme based on filamentation induced by the nonlinear propagation of unfocused ultrashort laser pulses. A detailed signal analysis suggests that this technique, remote filament-induced breakdown spectroscopy, can be extended up to the kilometer range.
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42.62.Fi Laser spectroscopy
42.62.Eh Metrological applications; optical frequency synthesizers for precision spectroscopy
82.80.-d Chemical analysis and related physical methods of analysis
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Experimental demonstration of nonreciprocal amplified spontaneous emission in a CoFe clad semiconductor optical amplifier for use as an integrated optical isolator

Mathias Vanwolleghem, Wouter Van Parys, Dries Van Thourhout, Roel Baets, François Lelarge, Olivier Gauthier-Lafaye, Bruno Thedrez, Roel Wirix-Speetjens, and Liesbet Lagae

Appl. Phys. Lett. 85, 3980 (2004); http://dx.doi.org/10.1063/1.1811802 (3 pages) | Cited 20 times

Online Publication Date: 3 November 2004

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Experimental results are presented for an integrated-optical-waveguide-isolator concept. This concept is based on inducing the transverse magneto-optic Kerr effect in a semiconductor InP-based optical amplifier (SOA) by using a transversely magnetized ferromagnetic metal as an electrical contact. As a result, the SOA exhibits nonreciprocal loss/gain for TM polarized light and is easily monolithically integrated with other InP-based active photonic devices. We have designed, fabricated and characterized prototype ferromagnetic metal-clad optical amplifiers for an operation wavelength of 1300 nm. In these first generation devices we obtained isolation strengths of up to 2.0 dB∕mm.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.82.Gw Other integrated-optical elements and systems
85.70.Sq Magnetooptical devices
78.45.+h Stimulated emission
78.20.Ls Magneto-optical effects
73.40.Ns Metal-nonmetal contacts

ErAs:GaAs photomixer with two-decade tunability and 12 μW peak output power

J. E. Bjarnason, T. L. J. Chan, A. W. M. Lee, E. R. Brown, D. C. Driscoll, M. Hanson, A. C. Gossard, and R. E. Muller

Appl. Phys. Lett. 85, 3983 (2004); http://dx.doi.org/10.1063/1.1813635 (3 pages) | Cited 41 times

Online Publication Date: 3 November 2004

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This letter reports the fabrication and demonstration of an ErAs:GaAs interdigitated photomixer as a tunable THz source ranging from ∼20 GHz to ∼2 THz, with 12 μW maximum power typically around ∼90 GHz. Each photomixer is coupled to a composite dipole-spiral planar antenna that emits a Gaussian-type beam into free space. The beam switches from dipole to spiral antenna behavior as the frequency increases. A distributed Bragg reflector is embedded in the device beneath the photomixer to increase its external quantum efficiency. The photomixer has a 900 math thick silicon nitride coating which serves as an antireflection and passivation layer, and also improves the reliability and heat tolerance of the device.
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84.40.Dc Microwave circuits
07.57.Hm Infrared, submillimeter wave, microwave, and radiowave sources
84.40.Ba Antennas: theory, components and accessories

High power quantum cascade lasers operating at λ≃87 and 130 μm

Lassaad Ajili, Giacomo Scalari, Jérôme Faist, Harvey Beere, Edmund Linfield, David Ritchie, and Giles Davies

Appl. Phys. Lett. 85, 3986 (2004); http://dx.doi.org/10.1063/1.1810217 (3 pages) | Cited 42 times

Online Publication Date: 3 November 2004

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We report high power quantum cascade lasers operating above liquid nitrogen temperature at λ≃87 and 130 μm based on a bound-to-continuum transition. For λ≃87 μm, 56 mW peak power in pulsed operation and 50 mW continuous wave operation at 10 K are demonstrated. At λ≃130 μm, a peak power of 50 mW was achieved and devices operated in continuous wave reached a maximum temperature of 53 K with an optical power of 11.5 mW at T=10 K. Lifetimes are extracted from the scaling of the transport and laser parameters as a function of size using a simple rate equation model.
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42.55.Px Semiconductor lasers; laser diodes

Observation of fast spontaneous emission decay in GaInAsP photonic crystal point defect nanocavity at room temperature

Toshihiko Baba, Daisuke Sano, Kengo Nozaki, Kyoji Inoshita, Yusuke Kuroki, and Fumio Koyama

Appl. Phys. Lett. 85, 3989 (2004); http://dx.doi.org/10.1063/1.1811379 (3 pages) | Cited 32 times

Online Publication Date: 3 November 2004

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The spontaneous emission decay in a photonic crystal slab nanocavity with a GaInAsP quantum well active region was measured at room temperature. Even far below lasing threshold, the decay was much faster than that for the as-grown wafer. A consideration including the enhanced spontaneous emission rate by the Purcell effect, intraband relaxation of carriers, nonradiative surface recombination, spatial hole burning, and carrier diffusion enabled us to explain different decay lifetime between on- and off-resonant conditions and between different size cavities. As a result, >16-fold shorter spontaneous emission lifetime was estimated, which strongly suggests the existence of a large Purcell effect.
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42.70.Qs Photonic bandgap materials
42.55.Sa Microcavity and microdisk lasers
78.66.Fd III-V semiconductors
42.55.Px Semiconductor lasers; laser diodes
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency

InGaAs∕AlAsSb quantum cascade lasers

D. G. Revin, L. R. Wilson, E. A. Zibik, R. P. Green, J. W. Cockburn, M. J. Steer, R. J. Airey, and M. Hopkinson

Appl. Phys. Lett. 85, 3992 (2004); http://dx.doi.org/10.1063/1.1814798 (3 pages) | Cited 30 times

Online Publication Date: 3 November 2004

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The In0.53Ga0.47As∕AlAs0.56Sb0.44 heterostructure system is of significant interest for the development of high-performance intersubband devices due to its very large conduction band offset (ΔEc∼1.6 eV) and lattice-matched compatibility with well-established InP-based waveguide technology. In this letter, we report the realization of In0.53Ga0.47As∕AlAs0.56Sb0.44 quantum cascade lasers emitting at λ∼4.3 μm. The highest-performance devices have low-temperature (20 K) threshold currents of ∼6 kA∕cm2 and display laser action up to a maximum temperature of 240 K, with a characteristic temperature of T0∼150 K.
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42.55.Px Semiconductor lasers; laser diodes
81.05.Ea III-V semiconductors
78.60.Fi Electroluminescence
78.66.Fd III-V semiconductors
73.21.Fg Quantum wells
71.20.Nr Semiconductor compounds

Scattering loss in silicon-on-insulator rib waveguides fabricated by inductively coupled plasma reactive ion etching

Yongjin Wang, Zhilang Lin, Xinli Cheng, Changsheng Zhang, Fan Gao, and Feng Zhang

Appl. Phys. Lett. 85, 3995 (2004); http://dx.doi.org/10.1063/1.1815063 (3 pages) | Cited 6 times

Online Publication Date: 3 November 2004

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Inductively coupled plasma reactive ion etching (ICPRIE) was used to etch rib the waveguide and U groove to achieve the integration of self-alignment connection between single mode fiber and rib waveguide in silicon-on-insulator (SOI) wafer. Interface roughness is one of the consequences of an ICPRIE process. Endface roughness, surface roughness, and sidewall roughness result in increasing scattering losses for waveguides. A series of atomic force microscope measurements were carried out to demonstrate the root-mean-square (rms) roughness of SOI rib waveguide etched by ICPRIE method. According to scalar scattering theory and Tien’s theory, scattering loss induced by the rms roughness was studied systematically.
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42.79.Gn Optical waveguides and couplers
42.82.Cr Fabrication techniques; lithography, pattern transfer
81.65.Cf Surface cleaning, etching, patterning
68.47.Fg Semiconductor surfaces
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Ct Interface structure and roughness
68.37.Ps Atomic force microscopy (AFM)

Minimization of out-of-plane losses in planar photonic crystals by optimizing the vertical waveguide

R. Ferrini, A. Berrier, L. A. Dunbar, R. Houdré, M. Mulot, S. Anand, S. de Rossi, and A. Talneau

Appl. Phys. Lett. 85, 3998 (2004); http://dx.doi.org/10.1063/1.1813634 (3 pages) | Cited 13 times

Online Publication Date: 3 November 2004

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A two-dimensional phenomenological approach previously developed for the modeling of out-of-plane losses in low refractive index contrast planar photonic crystals (PPhCs) is used to study the dependence of the different loss terms on the planar waveguide parameters. It is demonstrated that: (i) Losses can be minimized by designing vertical heterostructures optimized for a given technological process and/or for a given hole shape; and (ii) any small reduction of the loss value has a strong impact on the optical performances of PPhC structures.
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42.79.Gn Optical waveguides and couplers
42.70.Qs Photonic bandgap materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Optical levitation in a Bessel light beam

V. Garcés-Chávez, D. Roskey, M. D. Summers, H. Melville, D. McGloin, E. M. Wright, and K. Dholakia

Appl. Phys. Lett. 85, 4001 (2004); http://dx.doi.org/10.1063/1.1814820 (3 pages) | Cited 30 times

Online Publication Date: 3 November 2004

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A vertically oriented zero order Bessel light beam is shown to create a one-dimensional array of trapped particles over extended (millimeter) distances. The particles take up equilibrium positions over the entire length of the beam and this is a consequence of the interplay between optical scattering and the self-healing properties of the Bessel beam. This work has analogies to recent studies of optically bound matter and allows for the simple creation of one-dimensional particle chains and their subsequent spectroscopic analysis.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.25.Fx Diffraction and scattering
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