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8 Nov 2004

Volume 85, Issue 19, pp. 4269-4539

Issue Cover Spotlight Figure

Appl. Phys. Lett. 85, 4343 (2004); http://dx.doi.org/10.1063/1.1814814 (3 pages)

H. Isshiki, M. J. A. de Dood, A. Polman, and T. Kimura
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Influence of the surface termination to the point imaging by a photonic crystal slab with negative refraction

Sanshui Xiao, Min Qiu, Zhichao Ruan, and Sailing He

Appl. Phys. Lett. 85, 4269 (2004); http://dx.doi.org/10.1063/1.1814430 (3 pages) | Cited 62 times

Online Publication Date: 8 November 2004

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Point imaging by a photonic crystal slab due to the negative refraction is studied theoretically. By investigating the transfer function of the imaging system, the influence of the surface termination to the imaging quality is analyzed. It is shown that an appropriate surface termination is important for obtaining an image of good quality.
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42.70.Qs Photonic bandgap materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

MgZnO∕AlGaN heterostructure light-emitting diodes

A. Osinsky, J. W. Dong, M. Z. Kauser, B. Hertog, A. M. Dabiran, P. P. Chow, S. J. Pearton, O. Lopatiuk, and L. Chernyak

Appl. Phys. Lett. 85, 4272 (2004); http://dx.doi.org/10.1063/1.1815377 (3 pages) | Cited 90 times

Online Publication Date: 8 November 2004

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We report on p–n junction light-emitting diodes fabricated from MgZnO∕ZnO∕AlGaN∕GaN triple heterostructures. Energy band diagrams of the light-emitting diode structure incorporating piezoelectric and spontaneous polarization fields were simulated, revealing a strong hole confinement near the n‐ZnO∕p‐AlGaN interface with a hole sheet density as large as 1.82×1013 cm−2 for strained structures. The measured current–voltage (IV) characteristics of the triple heterostructure p–n junctions have rectifying characteristics with a turn-on voltage of ∼3.2 V. Electron-beam-induced current measurements confirmed the presence of a p–n junction located at the n‐ZnO∕p‐AlGaN interface. Strong optical emission was observed at ∼390 nm as expected for excitonic optical transitions in these structures. Experimental spectral dependence of the photocurrent confirmed the excitonic origin of the optical transition at 390 nm. Light emission was measured up to 650 K, providing additional confirmation of the excitonic nature of the optical transitions in the devices.
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85.60.Jb Light-emitting devices
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.60.Fi Electroluminescence
77.65.Ly Strain-induced piezoelectric fields

Direct laser writing of electro-optic waveguide in chromophore-doped hybrid sol–gel

Hong Xi Zhang, Dong Lu, Tao Liu, Masud Mansuripur, and Mahmoud Fallahi

Appl. Phys. Lett. 85, 4275 (2004); http://dx.doi.org/10.1063/1.1818726 (3 pages) | Cited 3 times

Online Publication Date: 8 November 2004

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To overcome the influence of chromophore absorption and degradation in the ultraviolet spectral range for direct photopatterning of electro-optic devices, a blue laser writing technique operating at 405 nm has been used to fabricate electro-optic waveguides from side-chain disperse red-1 doped photosensitive hybrid sol–gel films. The waveguide has good optical confinement and shows an electro-optic coefficient of about 9.0±0.4 pm∕V and high temporal stability. The results indicate that the hybrid sol–gel a promising matrix for chromophores, and this technique can find applications in direct patterning of electro-optic devices from nonlinear chromophores-doped photosensitive materials including sol–gels and polymers.
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42.79.Gn Optical waveguides and couplers
42.82.Cr Fabrication techniques; lithography, pattern transfer
42.62.-b Laser applications
42.65.Wi Nonlinear waveguides
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.20.Jq Electro-optical effects
42.70.Jk Polymers and organics
78.66.Qn Polymers; organic compounds

Two-dimensional colloid-based photonic crystals for distributed feedback polymer lasers

Rodrigue Mafouana, Jean-Luc Rehspringer, Charles Hirlimann, Claude Estournes, and Kokou D. Dorkenoo

Appl. Phys. Lett. 85, 4278 (2004); http://dx.doi.org/10.1063/1.1815392 (3 pages) | Cited 8 times

Online Publication Date: 8 November 2004

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We report on a process to design highly ordered monolayers of two-dimensional photonic crystals, made of silica nanoparticules, that can be used for the development of organic optical devices. We have used a photopolymerization process to incorporate a dye gain medium into the nanoparticle layers in order to achieve a laser cavity. The high spatial coherence of the deposits allows for single-mode laser emission in the plane of the layer when the light excitation is perpendicular to the plane. Such periodic films should help in reducing the number of layers needed for future electrically pumped distributed feedback lasers.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
82.50.-m Photochemistry
82.35.-x Polymers: properties; reactions; polymerization
42.70.Qs Photonic bandgap materials
82.70.Dd Colloids

Quantum dot emission from site-controlled InGaN∕GaN micropyramid arrays

P. R. Edwards, R. W. Martin, I. M. Watson, C. Liu, R. A. Taylor, J. H. Rice, J. H. Na, J. W. Robinson, and J. D. Smith

Appl. Phys. Lett. 85, 4281 (2004); http://dx.doi.org/10.1063/1.1815043 (3 pages) | Cited 24 times

Online Publication Date: 8 November 2004

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InxGa1−xN quantum dots have been fabricated by the selective growth of GaN micropyramid arrays topped with InGaN∕GaN quantum wells. The spatially, spectrally, and time-resolved emission properties of these structures were measured using cathodoluminescence hyperspectral imaging and low-temperature microphotoluminescence spectroscopy. The presence of InGaN quantum dots was confirmed directly by the observation of sharp peaks in the emission spectrum at the pyramid apices. These luminescence peaks exhibit decay lifetimes of approximately 0.5 ns, with linewidths down to 650 μeV (limited by the spectrometer resolution).
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81.07.Ta Quantum dots
81.05.Ea III-V semiconductors
78.67.Hc Quantum dots
78.67.De Quantum wells
78.55.Cr III-V semiconductors
78.60.Hk Cathodoluminescence, ionoluminescence
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Distributed feedback sol-gel zirconia channel waveguide lasers

Fei Chen, Jun Wang, Chao Ye, Dennis Lo, and Xiao-lei Zhu

Appl. Phys. Lett. 85, 4284 (2004); http://dx.doi.org/10.1063/1.1819511 (3 pages) | Cited 4 times

Online Publication Date: 8 November 2004

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We fabricated dye-doped zirconia channel waveguides using wet or dry etching of quartz substrates followed by sol-gel deposition of the Rhodamine 6G-doped zirconia in the channel. Distributed feedback laser action was generated in the channel waveguides by crossing two nanosecond laser beams at 532 nm. Maintaining the depth of the active zirconia layer at 3 μm, narrow linewidth lasing was achieved for rectangular channel waveguides with widths at 5, 6.5, and 10 μm. Wavelength tuning was achieved from 570 to 608 nm. The output laser mode was identified as the fundamental E11x mode. The dispersion behavior of the laser output was checked by comparing experiments with the predictions of Marcatili’s theory.
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42.79.Gn Optical waveguides and couplers
42.82.Cr Fabrication techniques; lithography, pattern transfer
42.55.Rz Doped-insulator lasers and other solid state lasers

An all-optically prepared and controlled nematic liquid crystal light valve

Y. W. Yi and T. E. Furtak

Appl. Phys. Lett. 85, 4287 (2004); http://dx.doi.org/10.1063/1.1819983 (2 pages) | Cited 3 times

Online Publication Date: 8 November 2004

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We describe an optically prepared and controlled nematic liquid crystal device, using derivatized methyl red self-assembled monolayers for surface alignment on both of its windows. This material demonstrates both reversible and irreversible photoinduced anisotropy, depending on the availability of oxygen during illumination. One window of the cell was permanently aligned prior to assembly while the other window retained its sensitivity to the orientation of the polarization of a controlling optical beam, leading to either a uniform or twisted state in the nematic cell. The entire management of the cell was thereby achieved without touching the alignment surfaces.
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42.79.Kr Display devices, liquid-crystal devices
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
68.47.Pe Langmuir-Blodgett films on solids; polymers on surfaces; biological molecules on surfaces

Fabrication of high-efficiency Fresnel-type lenses by pinhole diffraction imaging of sol-gel hybrid materials

Dong Jun Kang, Phan Viet Phong, and Byeong-Soo Bae

Appl. Phys. Lett. 85, 4289 (2004); http://dx.doi.org/10.1063/1.1815393 (3 pages) | Cited 3 times

Online Publication Date: 8 November 2004

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Sol-gel hybrid materials containing a large quantity of photoactive molecules exhibited large changes in both refractive index and volume on UV exposure. The materials were used for fabrication of Fresnel-type lenses using a simple method: pinhole diffraction imaging. With this technique, problems associated with the contact method could be overcome and Fresnel-type lenses with good focusing performance could be fabricated easily. Importantly, a high diffraction efficiency approaching 85% could be obtained.
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42.79.Bh Lenses, prisms and mirrors
42.15.Eq Optical system design
42.70.Gi Light-sensitive materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Pressure-tuned InGaAsSb∕AlGaAsSb diode laser with 700 nm tuning range

P. Adamiec, A. Salhi, R. Bohdan, A. Bercha, F. Dybala, W. Trzeciakowski, Y. Rouillard, and A. Joullié

Appl. Phys. Lett. 85, 4292 (2004); http://dx.doi.org/10.1063/1.1815069 (3 pages) | Cited 17 times

Online Publication Date: 8 November 2004

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InGaAsSb∕AlGaAsSb type-I midinfrared diode lasers emitting continuous wave at 2.4 μm at room temperature have been studied under high hydrostatic pressure. When the pressure was increased up to 19 kbar, the threshold current varied from 240 to 400 A∕cm2, showing a minimum of 200 A∕cm2 close to 8 kbar, and the emission spectra shifted to shorter wavelengths by up to 700 nm (i.e., from 2.4 μm to 1.7 μm). This exceptional tuning range could be very useful in tunable diode laser absorption spectroscopy.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
78.30.Fs III-V and II-VI semiconductors

Plasma damage-free deposition of Al cathode on organic light-emitting devices by using mirror shape target sputtering

Han-Ki Kim, D.-G. Kim, K.-S. Lee, M.-S. Huh, S. H. Jeong, K. I. Kim, H. Kim, D. W. Han, and J. H. Kwon

Appl. Phys. Lett. 85, 4295 (2004); http://dx.doi.org/10.1063/1.1815394 (3 pages) | Cited 20 times

Online Publication Date: 8 November 2004

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We report on the fabrication of plasma damage-free organic light-emitting devices (OLEDs) by using a mirror shape target sputtering (MSTS) technique. It is shown that OLEDs with Al cathode deposited by the MSTS show much lower leakage current (1×10−5 mA∕cm2) at reverse bias of −6 V, compared to that (1×10−1–∼10−2 mA∕cm2 at −6 V) of OLEDs with Al cathodes grown by conventional dc magnetron sputtering. This indicates that there is no plasma damage, which is caused by the bombardment of energetic particles. This suggests that MSTS could be a useful plasma damage-free and low-temperature deposition technique for both top- and bottom-emitting OLEDs and flexible displays.
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85.60.Jb Light-emitting devices
81.15.Cd Deposition by sputtering
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
73.61.At Metal and metallic alloys

Femtosecond coherent anti-Stokes Raman scattering spectroscopy using supercontinuum generated from a photonic crystal fiber

Hideaki Kano and Hiro-o Hamaguchi

Appl. Phys. Lett. 85, 4298 (2004); http://dx.doi.org/10.1063/1.1818741 (3 pages) | Cited 34 times

Online Publication Date: 8 November 2004

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Femtosecond time-resolved coherent anti-Stokes Raman scattering (CARS) spectroscopy is demonstrated using a Ti:Sapphire oscillator and a photonic crystal fiber. A spectrally dispersed CARS signal of cyclohexane exhibits well-defined beats with a period of 430 fs, which agrees well with a frequency difference between the symmetric and antisymmetric CH2-stretching vibrational modes.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
78.47.-p Spectroscopy of solid state dynamics
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.70.Qs Photonic bandgap materials
78.30.C- Liquids

Synchronized laser micromanipulation of multiple targets along each trajectory by single laser

Fumihito Arai, Keiichi Yoshikawa, Toshihiro Sakami, and Toshio Fukuda

Appl. Phys. Lett. 85, 4301 (2004); http://dx.doi.org/10.1063/1.1815061 (3 pages) | Cited 14 times

Online Publication Date: 8 November 2004

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A laser micromanipulation is suitable for manipulation of a microscopic object suspended in the liquid. Here we proposed the synchronized laser micromanipulation (SLM) for the trajectory control of the multiple targets with each designed trajectories independently by the single laser. SLM is different from the existing laser scanning micromanipulation in that we can manipulate multiple targets independently by the single laser by changing discrete laser scanning pattern. Here we show the condition for stable transportation of targets depends on the effect of Brownian motion. Accordingly we can manipulate multiple microbeads stably along with each designed trajectories by the proposed method.
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37.10.Vz Mechanical effects of light on atoms, molecules, and ions
42.62.Be Biological and medical applications
06.60.Sx Positioning and alignment; manipulating, remote handling
87.80.Cc Optical trapping
87.50.W- Optical/infrared radiation effects

Highly efficient yellow and white organic electroluminescent devices doped with 2,8-di(t-butyl)-5,11-di[4-(t-butyl)phenyl]-6,12-diphenylnaphthacene

Tswen-Hsin Liu, Yao-Shan Wu, Meng-Ting Lee, Hsian-Hung Chen, Chi-Hung Liao, and Chin H. Chen

Appl. Phys. Lett. 85, 4304 (2004); http://dx.doi.org/10.1063/1.1803911 (-4300 pages) | Cited 31 times

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We describe the applications of a sterically-hindered yellow dopant, 2,8-di(t-butyl)-5,11-di[4-(t-butyl)phenyl]-6,12-diphenylnaphthacene (TBRb) which, when compared to 5,6,11,12-tetraphenylnaphthacene (Rb) in either tris(8-hydroxyquinolinato)aluminum or 1,4-bis[N-(1-naphthyl)-N′-phenylamino]−4,4′ diamine (NPB) as host emitter, shows a 50%–34% increase in luminance efficiency over that of Rb device without significantly affecting its color. In addition, we have incorporated the TBRb doped yellow NPB emitter into the two-element white organic light-emitting diodes based on p-bis(p-N,N-di-phenyl-aminostyryl)benzene doped 2-methyl-9,10-di(2-naphthyl) anthracene sky-blue emitter which improved the luminance efficiency by 44% over that of Rb to 12.8 cd∕A and 4.3 lm∕W at 20 mA∕cm2 with CIEx,y=[0.31,0.38].
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence

Surfactant-assisted synthesis of Tb(III)-doped cerium phosphate single-crystalline nanorods with enhanced green emission

Wenbo Bu, Hangrong Chen, Zile Hua, Zhicheng Liu, Weimin Huang, Lingxia Zhang, and Jianlin Shi

Appl. Phys. Lett. 85, 4307 (2004); http://dx.doi.org/10.1063/1.1818346 (3 pages) | Cited 17 times

Online Publication Date: 8 November 2004

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Strong green emission has been obtained for Tb(III)-doped cerium phosphate single-crystalline nanorods synthesized via a facile, Pluronic P123 (EO20PO70EO20 Mav=5800, Aldrich)-assisted, hydrothermal method. The surfactant Pluronic P123 was found to play a crucial role in the enhanced photoluminescence emission as compared with the same material but synthesized without the surfactant. The smooth surface, well-defined facets, single crystalline feature, uniform morphologies, and especially very narrow size distributions (10–12 nm) of the Tb(III)-doped cerium phosphate single-crystalline nanorods are considered to be responsible for the strong photoluminescence emission.
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81.07.Bc Nanocrystalline materials
81.10.Dn Growth from solutions
82.70.Uv Surfactants, micellar solutions, vesicles, lamellae, amphiphilic systems, (hydrophilic and hydrophobic interactions)
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.55.Hx Other solid inorganic materials
61.46.-w Structure of nanoscale materials
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.37.Lp Transmission electron microscopy (TEM)

Analysis of the temperature performance of type-II interband cascade lasers

Mikhail V. Kisin, Sergey D. Suchalkin, Gregory Belenky, John D. Bruno, Richard Tober, and Serge Luryi

Appl. Phys. Lett. 85, 4310 (2004); http://dx.doi.org/10.1063/1.1814432 (3 pages) | Cited 4 times

Online Publication Date: 8 November 2004

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The temperature performance of type-II semiconductor lasers has been analyzed by comparing the temperature-concentration dependence for a charge-carrier subsystem at the threshold with steady-state temperature-concentration relationship implied by the carrier heating process. The low material gain characteristic of type-II heterostructures and the high resistance of the thermal link to the heat sink are primarily responsible for limiting the continuous-wave laser operation to low temperatures. We show also that the number of cascades for type-II interband cascade lasers can be optimized with respect to the highest achievable operating temperature.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Growth, optical characterization, and laser operation of epitaxial Yb:KY(WO4)2∕KY(WO4)2 composites with monoclinic structure

A. Aznar, R. Solé, M. Aguiló, F. Diaz, U. Griebner, R. Grunwald, and V. Petrov

Appl. Phys. Lett. 85, 4313 (2004); http://dx.doi.org/10.1063/1.1814426 (3 pages) | Cited 22 times

Online Publication Date: 8 November 2004

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Epitaxial monoclinic double tungstate laser crystals were grown with high crystalline quality. Based on these Yb-doped composites, laser operation was demonstrated. Continuous-wave laser emission of a Yb:KYW∕KYW crystal was achieved at 1030 nm. The 25‐μm-thin Yb:KYW layer was pumped at wavelengths near 980 nm by a Ti:sapphire laser. A maximum output power of 40 mW was obtained at room temperature.
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68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
42.55.Rz Doped-insulator lasers and other solid state lasers
77.84.Lf Composite materials
42.55.Xi Diode-pumped lasers
78.45.+h Stimulated emission

Influence of hole size on the extraordinary transmission through subwavelength hole arrays

K. L. van der Molen, F. B. Segerink, N. F. van Hulst, and L. Kuipers

Appl. Phys. Lett. 85, 4316 (2004); http://dx.doi.org/10.1063/1.1815379 (3 pages) | Cited 60 times

Online Publication Date: 8 November 2004

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We show that the extraordinary transmission of light through an array of square subwavelength holes is strongly influenced by the size of the holes. For small, square holes (air fraction below 20%), the dependence of the normalized transmission (transmissivity) on hole width greatly exceeds the expectations on the basis of conventional aperture theory. For larger holes, the transmissivity saturates. Moreover, the positions of the transmission maxima shift when the size is varied.
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42.25.Bs Wave propagation, transmission and absorption
42.79.-e Optical elements, devices, and systems

Reduction of focus size in tightly focused linearly polarized beams

M. Martínez-Corral, R. Martínez-Cuenca, I. Escobar, and G. Saavedra

Appl. Phys. Lett. 85, 4319 (2004); http://dx.doi.org/10.1063/1.1818729 (3 pages) | Cited 9 times

Online Publication Date: 8 November 2004

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The electromagnetic theory predicts that when a linearly polarized collimated field is focused by a high-angle focusing system, components perpendicular to the initial polarization are generated. The use of annular masks to reduce the area of the focal spot usually increases the magnitude of this phenomenon, known as depolarization. We present a class of masks, the three-ring masks, which are important because they narrow the central lobe of the focal intensity distribution without increasing the depolarization. This can be very useful in modern optical applications, such as confocal microscopy or multiphoton scanning microscopy.
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42.25.Ja Polarization
07.60.Pb Conventional optical microscopes

Bend design for the low-group-velocity mode in photonic crystal-slab waveguides

N. Moll and G.-L. Bona

Appl. Phys. Lett. 85, 4322 (2004); http://dx.doi.org/10.1063/1.1818340 (3 pages) | Cited 10 times

Online Publication Date: 8 November 2004

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We investigated bends for photonic crystals with triangular arrays of holes theoretically by employing two-dimensional band-structure and transmission calculations. We find that the guided mode of the bend is frequency-shifted compared with that of a straight waveguide. Decreasing the size of the holes in the immediate vicinity of the bend shifts the frequency of the mode back. These optimized bends can guide light in the frequency region of very low group velocities around corners.
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42.79.Gn Optical waveguides and couplers
42.70.Qs Photonic bandgap materials

S-band Tm3+-doped tellurite glass microsphere laser via a cascade process

Kiyotaka Sasagawa, Zen-o Yonezawa, Ryuta Iwai, Jun Ohta, and Masahiro Nunoshita

Appl. Phys. Lett. 85, 4325 (2004); http://dx.doi.org/10.1063/1.1810628 (3 pages) | Cited 16 times

Online Publication Date: 8 November 2004

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We present a Tm3+-doped tellurite glass microsphere laser operating in the S band via a cascade process. The microsphere is fabricated by melting the end of a tellurite glass wire, and the microsphere laser is pumped at 800 nm using a tapered optical fiber. Laser oscillation is observed simultaneously in the S band and the 1.9 μm band. The threshold of lasing in the 1.9 μm band is lower than in the S band, and the quantum efficiency in the 1.9 μm band increases with pump power above the lasing threshold of the S band.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.70.Ce Glasses, quartz
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Transmission-electron-microscopic studies of mechanical properties of single-walled carbon nanotube bundles

P. Jaroenapibal, D. E. Luzzi, S. Evoy, and S. Arepalli

Appl. Phys. Lett. 85, 4328 (2004); http://dx.doi.org/10.1063/1.1815057 (3 pages) | Cited 11 times

Online Publication Date: 8 November 2004

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The mechanical properties of single-walled carbon nanotube bundles were studied via the observation of mechanical resonance in a transmission electron microscope. The bundles were capacitively actuated using tunable ac signals applied through a custom built specimen holder. Resonant frequencies ranging from 0.2 to 9 MHz were observed in bundles of diameters and lengths ranging from 15 to 70 nm, and from 1 to 10 μm, respectively. An effective bending modulus of Eb=76±4 GPa was extracted from the data. Onset of nonlinear frequency response was observed under large actuation amplitudes.
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61.46.-w Structure of nanoscale materials
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity
68.37.Lp Transmission electron microscopy (TEM)

Fabrication of InAs quantum dots on InP(100) by metalorganic vapor-phase epitaxy for 1.55 μm optical device applications

Kenichi Kawaguchi, Mitsuru Ekawa, Akito Kuramata, Tomoyuki Akiyama, Hiroji Ebe, Mitsuru Sugawara, and Yasuhiko Arakawa

Appl. Phys. Lett. 85, 4331 (2004); http://dx.doi.org/10.1063/1.1814442 (3 pages) | Cited 24 times

Online Publication Date: 8 November 2004

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A change in the density and wavelength of InAs quantum dots (QDs) on InGaAsP/InP(100) substrate grown by metalorganic vapor-phase epitaxy (MOVPE) in accordance with variation in the growth conditions was studied, aiming at optical device applications in the 1.55 μm region. In the moderate V/III ratio region, the size of QDs was found to decrease while the density increased as the group-V source was reduced, but on the other hand, both of them increased monotonously with increasing InAs supply. The combination of changing the V/III ratio and InAs supply allowed us to control the density and wavelength of QDs independently so that QDs with a density as high as 5.6×1010 and a 1.6 μm emission were obtained. The letter reports the MOVPE growth technique of QDs on InGaAsP/InP(100), which connects QDs with mature 1.55 μm device technology.
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81.07.Ta Quantum dots
68.65.Hb Quantum dots (patterned in quantum wells)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.05.Ea III-V semiconductors
78.67.Hc Quantum dots
78.55.Cr III-V semiconductors

Band-edge exciton states in AlN single crystals and epitaxial layers

L. Chen, B. J. Skromme, R. F. Dalmau, R. Schlesser, Z. Sitar, C. Chen, W. Sun, J. Yang, M. A. Khan, M. L. Nakarmi, J. Y. Lin, and H.-X. Jiang

Appl. Phys. Lett. 85, 4334 (2004); http://dx.doi.org/10.1063/1.1818733 (3 pages) | Cited 30 times

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The band-edge excitonic properties of AlN are investigated using low-temperature (1.7 K) optical reflectance and transmission measurements of samples with various crystal orientations. The A, B, and C excitons are found to have energies of 6.025, 6.243, and 6.257 eV in unstrained material, which shift with strain. The results are compared to a calculation of exciton energies and oscillator strengths to yield a crystal-field splitting of −230 meV in unstrained AlN, in good agreement with previous ab initio calculations.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
71.35.-y Excitons and related phenomena
71.70.Ch Crystal and ligand fields

One-dimensional heterostructural metallodielectric photonic band gap material for the modification of emission spectrum of BaF2 scintillator

Yonggang Wu, Zhanshan Wang, Mu Gu, Li Wang, Xiaoyan Lin, Lingyan Chen, and Rongkun Xu

Appl. Phys. Lett. 85, 4337 (2004); http://dx.doi.org/10.1063/1.1814796 (3 pages) | Cited 3 times

Online Publication Date: 8 November 2004

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One-dimensional metallodielectric heterostructural photonic band gap (PBG) material is designed to reach high transmittance band in short wavelength, broad and deep forbidden band in long wavelength, especially sharp cutoff edge between the transmission and forbidden bands. The designed PBG material is applied to modify the emission spectrum of a BaF2 scintillator and is proved to be adequate to suppress the slow component of the scintillation light. The suppression ratio of the slow to the fast component reaches 28 dB with a tolerable attenuation of the fast component.
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77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
78.55.Hx Other solid inorganic materials
78.20.-e Optical properties of bulk materials and thin films

Strain-induced elastic moduli softening and associated fcc↔bcc transition in iron

W. S. Lai and X. S. Zhao

Appl. Phys. Lett. 85, 4340 (2004); http://dx.doi.org/10.1063/1.1815060 (3 pages) | Cited 8 times

Online Publication Date: 8 November 2004

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Show Abstract
Using molecular dynamics calculations we demonstrate that with decreasing the thickness of ultrathin body-centered-cubic (bcc) α‐Fe film with (001) surfaces, the biaxial strain results in first bcc(001)→face-centered-cubic (fcc) (001) transition along the inverse Bain path due to softening of C33, and then fcc(001)→bcc(011) because of shear modulus vanishing along fcc 〈110〉 directions. For the bulk fcc γ‐Fe, the tensile biaxial strain along the Bain path transforms fcc (001) into bcc (001) with fcc〈110〉∥bcc〈100〉, while compressive strain results in shear instability, in agreement with recent ab initio calculations.
Show PACS
81.05.Bx Metals, semimetals, and alloys
68.60.Bs Mechanical and acoustical properties
64.70.K- Solid-solid transitions
81.40.Jj Elasticity and anelasticity, stress-strain relations
71.15.Pd Molecular dynamics calculations (Car-Parrinello) and other numerical simulations
68.55.-a Thin film structure and morphology
62.20.D- Elasticity
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