APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Next Issue

5 Jul 2004

Volume 85, Issue 1, pp. 1-159

Issue Cover Spotlight Figure

Appl. Phys. Lett. 85, 145 (2004); http://dx.doi.org/10.1063/1.1769595 (3 pages)

J. U. Lee, P. P. Gipp, and C. M. Heller
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Thin HfO2 films grown on Si(100) by atomic oxygen assisted molecular beam epitaxy

Z. J. Yan, R. Xu, Y. Y. Wang, S. Chen, Y. L. Fan, and Z. M. Jiang

Appl. Phys. Lett. 85, 85 (2004); http://dx.doi.org/10.1063/1.1767604 (3 pages) | Cited 18 times

Online Publication Date: 29 June 2004

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Thin high-k dielectric HfO2 films are deposited on Si(100) substrate by molecular beam epitaxy using Hf and atomic oxygen source. The composition of the film is determined to be stoichiometric HfO2. The very flat surface of the deposited film with a root mean square roughness less than 0.16 nm without any visible pin holes down to the nanometer size can be reached. The film maintains good thermal stability after annealing at 900 °C for 15 min in N2 ambient. The refractive index of the film is 1.89 with a negligible extinction coefficient in the visible wavelength region and the dielectric constant is around 19. A low leakage current of 1.61×10−3 A∕cm2 at −2 V bias is achieved for a film with the equivalent oxide thickness of 2.4 nm after annealing.
Show PACS
77.55.-g Dielectric thin films
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
78.66.Nk Insulators
68.35.B- Structure of clean surfaces (and surface reconstruction)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
77.22.Ch Permittivity (dielectric function)
81.40.Gh Other heat and thermomechanical treatments
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
84.32.Tt Capacitors

Silicate layer formation at Pr2O3∕Si(001) interfaces

D. Schmeißer, H.-J. Müssig, and J. Dąbrowski

Appl. Phys. Lett. 85, 88 (2004); http://dx.doi.org/10.1063/1.1769582 (3 pages) | Cited 21 times

Online Publication Date: 29 June 2004

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We studied Pr2O3∕Si(001) interfaces by synchrotron radiation photoelectron spectroscopy and by ab initio calculations. We show that the interface formed during molecular-beam epitaxy under the oxygen partial pressure above 1×10−8 mbar consists of a mixed Si–Pr oxide, such as (Pr2O3)(SiO)x(SiO2)y. Neither an interfacial SiO2 nor an interfacial silicide is formed. The silicate formation is driven by a low energy of O in a PrOSi bond and by the strain in the subsurface SiOx layer. We expect that this natural interfacial Pr silicate will facilitate the integration of the high-k dielectric Pr2O3 into future complementary metal–oxide–semiconductor technologies.
Show PACS
77.55.-g Dielectric thin films
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
68.35.Fx Diffusion; interface formation
77.22.Ch Permittivity (dielectric function)
68.55.-a Thin film structure and morphology
71.15.Pd Molecular dynamics calculations (Car-Parrinello) and other numerical simulations
79.60.Jv Interfaces; heterostructures; nanostructures
68.35.Ct Interface structure and roughness

Electromechanical and ferroelectric properties of (Bi1∕2Na1∕2)TiO3–(Bi1∕2K1∕2)TiO3–BaTiO3 lead-free piezoelectric ceramics

X. X. Wang, X. G. Tang, and H. L. W. Chan

Appl. Phys. Lett. 85, 91 (2004); http://dx.doi.org/10.1063/1.1767592 (3 pages) | Cited 127 times

Online Publication Date: 29 June 2004

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Lead-free piezoelectric ceramics (0.95−x)(Bi1∕2Na1∕2)TiO3–x(Bi1∕2K1∕2)TiO3–0.05BaTiO3 (abbreviated as BNT–BKT–BT100x, with x ranged from 0 to 20 mol %) have been studied. Effects of amount of BKT on the electrical properties and crystal structure were examined. BNT–BKT–BT5 ceramics give good performances with piezoelectric constant d33=148 pC∕N, electromechanical coupling factor kp=34 %, kt=49.2 %, free permittivity ϵ33T∕ϵ0=700, and dissipation factor tanδ=2 % at 1 kHz. Accordingly, the sample shows larger remanent polarization and lower coercive field than 0.95BNT–0.05BT ceramics. X-ray diffraction analysis shows that incorporated BKT diffuses into the BNT–BT lattice to form a solid solution during sintering, but changes the crystal structure from rhombohedral to tetragonal symmetry at higher BKT amounts.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.65.Bn Piezoelectric and electrostrictive constants
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
77.22.Ej Polarization and depolarization
77.80.Dj Domain structure; hysteresis
61.66.Fn Inorganic compounds

Optical nonlinearity enhancement of graded metallic films

J. P. Huang and K. W. Yu

Appl. Phys. Lett. 85, 94 (2004); http://dx.doi.org/10.1063/1.1769086 (3 pages) | Cited 50 times

Online Publication Date: 29 June 2004

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The effective linear and third-order nonlinear susceptibility of graded metallic films with weak nonlinearity have been investigated. Due to the simple geometry, we were able to derive exactly the local field inside the graded structures having a Drude dielectric gradation profile. We calculated the effective linear dielectric constant and third-order nonlinear susceptibility. We investigated the surface plasmon resonant effect on the optical absorption, the optical nonlinearity enhancement, and the figure of merit of graded metallic films. It is found that the presence of gradation in metallic films yields a broad resonant plasmon band in the optical region, resulting in a large enhancement of the optical nonlinearity, and hence a large figure of merit. We suggest experiments be done to check our theoretical predictions, because graded metallic films can be fabricated more easily than graded particles.
Show PACS
78.66.Bz Metals and metallic alloys
77.22.Ch Permittivity (dielectric function)

Dielectric behavior and dependence of percolation threshold on the conductivity of fillers in polymer-semiconductor composites

Zhi-Min Dang, Ce-Wen Nan, Dan Xie, Yi-He Zhang, and S. C. Tjong

Appl. Phys. Lett. 85, 97 (2004); http://dx.doi.org/10.1063/1.1767951 (3 pages) | Cited 45 times

Online Publication Date: 29 June 2004

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Polymer-semiconductor PVDF∕LNO (polyvinylidene fluoride∕Li doped NiO) composites were fabricated via simple blending and hot-molding technique. The dielectric behavior of such composites was studied over broad frequency. The results revealed the dependence of percolation threshold on the conductivity of LNO filler in the composites. And the conductivity of the LNO fillers played an important role on the dielectric properties and critical exponents of the PVDF∕LNO composites. High dielectric constants and low conductivities of the composites were observed near the percolation threshold. Finally, critical exponents were also used to explain the experimental results, and provided useful information for understanding the resultant dielectric properties.
Show PACS
77.84.Lf Composite materials
77.22.Ch Permittivity (dielectric function)
72.80.Tm Composite materials
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close