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5 Jul 2004

Volume 85, Issue 1, pp. 1-159

Issue Cover Spotlight Figure

Appl. Phys. Lett. 85, 145 (2004); http://dx.doi.org/10.1063/1.1769595 (3 pages)

J. U. Lee, P. P. Gipp, and C. M. Heller
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Frequency band gap for Rayleigh waves on coated substrates

Nico F. Declercq, Joris Degrieck, and Oswald Leroy

Appl. Phys. Lett. 85, 148 (2004); http://dx.doi.org/10.1063/1.1766406 (3 pages) | Cited 1 time

Online Publication Date: 29 June 2004

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The Rayleigh wave velocity for a coated substrate must have a value in between the ones for the substrate material and the coating material. Nevertheless, Adler and McCathern [J. Appl. Phys. 49, 2576 (1978)] have performed measurements, based on the Schoch effect, on a stainless steel substrate covered with an aluminum oxide coating that contradict this phenomenon. The current letter describes the frequency band gap effect for Rayleigh waves on coated substrates and explains how this phenomenon is related to the cited measurements. The existence of such a gap can be very important for the development of frequency filters.
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71.20.Ps Other inorganic compounds
68.35.Iv Acoustical properties

Oxidation lift-off method for layer transfer of GaAs∕AlAs-based structures

S. Oktyabrsky, A. Katsnelson, V. Tokranov, R. Todt, and M. Yakimov

Appl. Phys. Lett. 85, 151 (2004); http://dx.doi.org/10.1063/1.1769592 (3 pages) | Cited 1 time

Online Publication Date: 29 June 2004

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A method for layer transfer via attachment and release of GaAs-based components onto silicon platform in a single-step process (oxidation lift-off method) is proposed. The method involves moderate temperature (∼400°C) alloy bonding of GaAs devices with simultaneous removal of the GaAs substrate by lateral oxidation of sacrificial AlAs layer. Selectivity with respect to Al content is high enough to release the vertical cavity laser structures containing layers of AlxGa1−xAs with x=0.9. This characteristic of the oxidation process allows for the release of components and form oxide apertures during a single step. The technology can be employed for heterogeneous integration of various compound semiconductor devices with Si or other substrates.
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81.65.Mq Oxidation
42.55.Px Semiconductor lasers; laser diodes

Experimental evidence of omnidirectional elastic bandgap in finite one-dimensional phononic systems

Betsabe Manzanares-Martínez, José Sánchez-Dehesa, Andreas Håkansson, Francisco Cervera, and Felipe Ramos-Mendieta

Appl. Phys. Lett. 85, 154 (2004); http://dx.doi.org/10.1063/1.1766074 (3 pages) | Cited 11 times

Online Publication Date: 29 June 2004

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We present an experimental demonstration of the occurence of omnidirectional reflection in a finite multilayer of two elastic materials. This property is demonstrated in three different samples consisting of a few periods of Pb∕Epoxy. The effect is fullfiled thanks to the large mismatch between the elastic parameters of the two materials in the multilayer. The thicknesses of the layers were chosen in order to have the omnidirectional gap at a few hundreds of kHz. The theoretical treatment of the phononic band structure of the corresponding superlattice as well as the transmission properties through the finite structures are in good agreement with the transmission measurements.
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63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.D- Elasticity
62.65.+k Acoustical properties of solids

Drastic enhancement of nanoelectromechanical-system fabrication yield using electron-beam deposition

Daniel R. Koenig, Dominik V. Scheible, and Robert H. Blick

Appl. Phys. Lett. 85, 157 (2004); http://dx.doi.org/10.1063/1.1766080 (3 pages) | Cited 3 times

Online Publication Date: 29 June 2004

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The most common fabrication processes of nanoelectromechanical structures usually start with a silicon-on-insulator chip and incorporate several lithography and etch steps. The wet etch step, which involves hydrofluoric acid, is generally the most critical of these processing steps. In this letter, we present an enhancement of the wet etch step which relies on electron-beam deposition. The technique of electron-beam deposition utilizes a protective carbon layer which is applied by a scanning electron microscope. It allows us to resolve typical problems associated with the wet etch step and drastically increases the yield.
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
81.16.Nd Micro- and nanolithography
81.65.Cf Surface cleaning, etching, patterning
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
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