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15 Nov 2004

Volume 85, Issue 20, pp. 4561-4807

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Appl. Phys. Lett. 85, 4768 (2004); http://dx.doi.org/10.1063/1.1818331 (3 pages)

G. Walter, N. Holonyak, M. Feng, and R. Chan
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Publisher’s Note: “Charge decay characteristics of silicon-oxide-nitride-oxide-silicon structure at elevated temperatures and extraction of the nitride trap density distribution” [Appl. Phys. Lett. 85, 660 (2004)]

Tae Hun Kim, Jae Sung Sim, Jong Duk Lee, Hyung Cheol Shin, and Byung-Gook Park

Appl. Phys. Lett. 85, 4807 (2004); http://dx.doi.org/10.1063/1.1822924 (1 page)

Online Publication Date: 16 November 2004

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99.10.Fg Publisher's note
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