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15 Nov 2004

Volume 85, Issue 20, pp. 4561-4807

Issue Cover Spotlight Figure

Appl. Phys. Lett. 85, 4768 (2004); http://dx.doi.org/10.1063/1.1818331 (3 pages)

G. Walter, N. Holonyak, M. Feng, and R. Chan
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Combined electron- and ion-beam imprinter and its applications

Q. Ji, L. Ji, Y. Chen, and K.-N. Leung

Appl. Phys. Lett. 85, 4618 (2004); http://dx.doi.org/10.1063/1.1812367 (3 pages) | Cited 4 times

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A combined electron- and ion-beam system employing a double-chamber plasma source and a single accelerator column has been developed to provide focused electron and positive-ion beams simultaneously, with no need for a separate electron source or accelerating column for sample neutralization. The self-aligned ion and electron beams can be used to micromachine and image a variety of materials, both conducting and insulating. Together with an ion-beam imprinting scheme, the combined electron/ion beam system is compact and provides low-cost, high-throughput, and large-area micromachining.
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52.77.-j Plasma applications
85.40.Hp Lithography, masks and pattern transfer
81.16.Nd Micro- and nanolithography
61.80.Jh Ion radiation effects
61.82.Ms Insulators
61.80.Fe Electron and positron radiation effects
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