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22 Nov 2004

Volume 85, Issue 21, pp. 4831-5106

Issue Cover Spotlight Figure

Appl. Phys. Lett. 85, 4845 (2004); http://dx.doi.org/10.1063/1.1823019 (3 pages)

Wounjhang Park and Jeong-Bong Lee
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Effects of annealing temperature on electrical resistance of bonded n‐GaAs wafers

Po Chun Liu, Cheng Lun Lu, YewChung Sermon Wu, Ji-Hao Cheng, and Hao Ouyang

Appl. Phys. Lett. 85, 4831 (2004); http://dx.doi.org/10.1063/1.1823592 (3 pages) | Cited 5 times

Online Publication Date: 23 November 2004

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The electrical characteristics and microstructures of n-type (100) GaAs bonded interfaces were systematically investigated. Experimental results indicated that GaAs did not bond directly to itself, but via an amorphous oxide layer at 400 °C. When temperatures increased above 400 °C, the oxide bonded area declined and finally disappeared. Electrical resistance decreased with bonding temperature. However, the resistance increased with temperatures exceeding 850 °C.
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61.72.Cc Kinetics of defect formation and annealing
72.80.Ey III-V and II-VI semiconductors
66.30.Ny Chemical interdiffusion; diffusion barriers
72.20.Fr Low-field transport and mobility; piezoresistance
81.05.Ea III-V semiconductors
68.35.Ct Interface structure and roughness

Finite-width waveguide and waveguide intersections for self-collimated beams in photonic crystals

Zhaofeng Li, Haibo Chen, Zhitang Song, Fuhua Yang, and Songlin Feng

Appl. Phys. Lett. 85, 4834 (2004); http://dx.doi.org/10.1063/1.1828577 (3 pages) | Cited 11 times

Online Publication Date: 23 November 2004

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The effect of waveguide width on the propagation of self-collimated beams in photonic crystals is studied using the finite-difference time-domain method. It is shown that, to obtain good transmission, it would be better to keep the waveguide width above a minimum value. It is also shown that waveguide intersections based on the effect of self-collimated beams can provide high throughput and low cross talk simultaneously within a relatively wide bandwidth.
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42.70.Qs Photonic bandgap materials
42.79.Gn Optical waveguides and couplers
42.79.Ag Apertures, collimators

Phase locking in a fiber laser array with varying path lengths

Liping Liu, Yi Zhou, Fanting Kong, Y. C. Chen, and Kotik K. Lee

Appl. Phys. Lett. 85, 4837 (2004); http://dx.doi.org/10.1063/1.1826235 (3 pages) | Cited 19 times

Online Publication Date: 23 November 2004

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Phase locking has been demonstrated in fiber lasers coupled to a common resonator containing a spatial filter. The phase-locked mode is highly stable despite the phase variations in the individual elements caused by thermal and mechanical effects. The ability to maintain phase locking is attributed to a self-adjusting process, which can be found only in systems with a combination of high gain, long length, low Q, and broad gain bandwidth, all of which can be met in fiber laser arrays.
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42.55.Wd Fiber lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking

Self-pulsation and optical injection locking for multielectrode distributed feedback lasers using phase-shift-induced modes

Satoshi Nishikawa, Mitsunobu Gotoda, Tetsuya Nishimura, and Yasunori Tokuda

Appl. Phys. Lett. 85, 4840 (2004); http://dx.doi.org/10.1063/1.1828228 (2 pages) | Cited 5 times

Online Publication Date: 23 November 2004

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We present a method of lasing mode control by taking advantage of phase-shifted grating for multielectrode distributed feedback lasers. By applying this method to stabilize the dual lasing modes, we demonstrated not only self-pulsating through beating phenomena, but also optical injection locking for external signals at very high frequency regions.
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42.55.Px Semiconductor lasers; laser diodes
85.60.Bt Optoelectronic device characterization, design, and modeling

Mask pattern transferred transient grating technique for molecular-dynamics study in solutions

Koichi Okamoto, Zhaoyu Zhang, Axel Scherer, and David T. Wei

Appl. Phys. Lett. 85, 4842 (2004); http://dx.doi.org/10.1063/1.1828591 (3 pages) | Cited 6 times

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We have developed a mask pattern transferred transient grating (MPT-TG) technique by using metal grating films. Transient thermal grating is generated by an ultraviolet light pattern transfer to nitrobenzene in 2-propanol solution, and the subsequent effect is detected through its diffraction to a probe beam. The thermal diffusion coefficient is obtained by the relationship between the grating periods and the signal decay lifetime, and is well in agreement with the calculated value. This technique has many advantages, such as a simple setting, an easy alignment, accurate phase control, and high stability for molecular-dynamics study in solutions.
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42.65.Sf Dynamics of nonlinear optical systems; optical instabilities, optical chaos and complexity, and optical spatio-temporal dynamics
42.79.Dj Gratings
66.10.C- Diffusion and thermal diffusion

Mechanically tunable photonic crystal structure

Wounjhang Park and Jeong-Bong Lee

Appl. Phys. Lett. 85, 4845 (2004); http://dx.doi.org/10.1063/1.1823019 (3 pages) | Cited 51 times

Online Publication Date: 23 November 2004

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We report a tunable nanophotonic device concept based on flexible photonic crystal, which is comprised of a periodic array of high-index dielectric material and a low-index flexible polymer. Tunability is achieved by applying mechanical force with nano-/microelectromechanical system actuators. The mechanical stress induces changes in the periodicity of the photonic crystal and consequently modifies the photonic band structure. To demonstrate the concept, we theoretically investigated the effect of mechanical stress on the anomalous refraction behavior and observed a very wide tunability in the beam propagation direction. This concept provides a means to achieve real-time, dynamic control of photonic band structure and will thus expand the utility of photonic crystal structures in advanced nanophotonic systems.
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42.70.Qs Photonic bandgap materials
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
78.66.Qn Polymers; organic compounds
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
68.60.Bs Mechanical and acoustical properties

Dramatic effects of hole transport layer on the efficiency of iridium-based organic light-emitting diodes

Ying Wang

Appl. Phys. Lett. 85, 4848 (2004); http://dx.doi.org/10.1063/1.1823031 (3 pages) | Cited 18 times

Online Publication Date: 23 November 2004

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Electroluminescent efficiency of organic light-emitting diodes with Ir-based emitter depends strongly on the nature of the hole transport layer used. The efficiency is not correlated with the oxidation potential of the hole transport material. Instead, we found that many of the hole transport materials used can quench the photoluminescence intensity of the Ir green emitter and the photoluminescent quenching efficiency correlates well with the device efficiency. Based on the pulse radiolysis energy transfer experiments, we established the origin of the photoluminescent quenching as due to energy transfer from the excited state of Ir green emitter to the triplet state of the hole transport material.
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85.60.Jb Light-emitting devices
78.55.Kz Solid organic materials
78.60.Fi Electroluminescence
72.20.Fr Low-field transport and mobility; piezoresistance

1.3 μm InGaAs vertical-cavity surface-emitting lasers with mode filter for single mode operation

R. Marcks von Würtemberg, P. Sundgren, J. Berggren, M. Hammar, M. Ghisoni, E. Ödling, V. Oscarsson, and J. Malmquist

Appl. Phys. Lett. 85, 4851 (2004); http://dx.doi.org/10.1063/1.1823012 (3 pages) | Cited 9 times

Online Publication Date: 23 November 2004

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We report on the performance and analysis of 1.3 μm range InGaAs∕GaAs vertical-cavity surface-emitting lasers (VCSELs) with an integrated mode filter consisting of a patterned silicon layer on the top distributer Bragg reflector. In this way, 1 mW of single mode power is obtained from a device with a wavelength of 1265 nm and a threshold current of 2.6 mA at room temperature. An effective index model is used to extract the internal and external losses of the VCSEL structure and to predict the modal losses with and without mode filter, thereby providing a useful design tool for single mode VCSELs.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.79.Ci Filters, zone plates, and polarizers

Nanocavity in a silicon waveguide for ultrasensitive nanoparticle detection

Bradley Schmidt, Vilson Almeida, Christina Manolatou, Stefan Preble, and Michal Lipson

Appl. Phys. Lett. 85, 4854 (2004); http://dx.doi.org/10.1063/1.1819997 (3 pages) | Cited 32 times

Online Publication Date: 23 November 2004

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We demonstrate the use of a micron-size planar silicon photonic device for the detection of ultralow concentrations of metal nanoparticles. The high detection sensitivity is achieved by using a strong light confining structure that enhances the effective extinction cross section of metal nanoparticles. We demonstrate the detection of 10 nm diameter gold particles with a density of fewer than 1.25 particles per 0.04 μm2. Using such a device one could detect the presence of single metal nanoparticles specifically bound to various analytes, enabling ultrasensitive detection of analytes including DNA, RNA, proteins, and antigens.
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42.79.Gn Optical waveguides and couplers
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
61.46.-w Structure of nanoscale materials
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
87.80.-y Biophysical techniques (research methods)
42.82.Et Waveguides, couplers, and arrays

Electrical tunable Fabry–Perot interferometer using a poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene) terpolymer

Dae-Yong Jeong, Yong-Hong Ye, and Q. M. Zhang

Appl. Phys. Lett. 85, 4857 (2004); http://dx.doi.org/10.1063/1.1826225 (3 pages) | Cited 7 times

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Electrical tunable Fabry-Perot interferometers (FPIs) using a poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene) terpolymer were fabricated and characterized. Using pure strain tuning, which for the terpolymer films under mechanically clamped condition is 1.3% under 100 V/μm field, we show that a tunable range of 22.5 nm can be obtained at wavelengths near 1.5 μm. Due to the opposite sign of the field-induced strain and the refractive index change from the electro-optic effect, the FPI using a terpolymer film directly as the cavity of the etalon shows a smaller tunability (0.78% under 100 V/μm).
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07.60.Ly Interferometers
42.79.-e Optical elements, devices, and systems
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.20.Jq Electro-optical effects

Bragg gratings in silicon-on-insulator waveguides by focused ion beam milling

D. J. Moss, V. G. Ta’eed, B. J. Eggleton, D. Freeman, S. Madden, M. Samoc, B. Luther-Davies, S. Janz, and D.-X. Xu

Appl. Phys. Lett. 85, 4860 (2004); http://dx.doi.org/10.1063/1.1824182 (3 pages) | Cited 11 times

Online Publication Date: 23 November 2004

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We report Bragg grating structures fabricated by focused ion beam milling in optical waveguides, and demonstrate that they can be used as a powerful diagnostic of optical modes in very high index waveguides. We show that higher-order lossy modes, which can be present in large numbers even in single-moded silicon-on-insulator waveguides, can dramatically affect the optical transmission spectra of Bragg gratings in these waveguides, even though these modes are normally not observable. Our results not only illuminate challenges to realize practical gratings in high index waveguides, but raise the possibility of devices based on mode conversion to extremely high order modes.
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42.79.Dj Gratings
42.82.Et Waveguides, couplers, and arrays
42.82.Cr Fabrication techniques; lithography, pattern transfer
42.25.Bs Wave propagation, transmission and absorption

Supercontinuum growth in a highly nonlinear fiber with a low-coherence semiconductor laser diode

A. K. Abeeluck and C. Headley

Appl. Phys. Lett. 85, 4863 (2004); http://dx.doi.org/10.1063/1.1818332 (3 pages) | Cited 8 times

Online Publication Date: 23 November 2004

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A low-coherence, amplified, cw semiconductor laser diode is used as a pump to demonstrate supercontinuum (SC) generation in a highly nonlinear, dispersion-shifted fiber (HNLF). At a launch power of 1.6 W into the anomalous-dispersion regime of 5 km of HNLF, a SC extending from 1230 nm to greater than 1770 nm is achieved. The SC grows through the seeding effect of modulation instability that also converts the cw beam into short pulses so that subsequent spectral broadening becomes similar to pumping with pulsed laser sources. The experimental data show the manifestation of soliton self-frequency shift associated with a Stokes band as the launch power is increased. Amplification of the continuum noise with respect to the cw pump is also reported.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Wd Fiber lasers
42.81.Dp Propagation, scattering, and losses; solitons
42.65.Tg Optical solitons; nonlinear guided waves

Zero dispersion at small group velocities in photonic crystal waveguides

A. Yu. Petrov and M. Eich

Appl. Phys. Lett. 85, 4866 (2004); http://dx.doi.org/10.1063/1.1815066 (3 pages) | Cited 76 times

Online Publication Date: 23 November 2004

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Modes of photonic crystal (PC) line-defect waveguides can have small group velocity away from the Brillouin zone edge. This property can be explained by the strong interaction of the modes with the bulk PC. An anticrossing of “index guided” and “gap guided” modes should be taken into account. To control dispersion, the anticrossing point can be shifted by the change of the PC waveguide parameters. An example of a waveguide is presented with vanishing second- and third-order dispersion.
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42.79.Gn Optical waveguides and couplers
42.70.Qs Photonic bandgap materials
73.20.At Surface states, band structure, electron density of states
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
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Microdischarge devices with 10 or 30 μm square silicon cathode cavities: pd scaling and production of the XeO excimer

S.-J. Park, J. G. Eden, J. Chen, and C. Liu

Appl. Phys. Lett. 85, 4869 (2004); http://dx.doi.org/10.1063/1.1825061 (3 pages) | Cited 15 times

Online Publication Date: 23 November 2004

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Silicon microplasma devices with square trench cathode cavities having cross sections of (10 μm)2 or (30 μm)2 and a depth of 200 μm have been fabricated and operated successfully in the rare gases and Xe∕O2 mixtures at pressures (300 K) up to 1100 Torr. The (10 μm)2 structures exhibit electrical characteristics that contrast with the behavior of larger devices and may indicate the onset of the breakdown of pd scaling. Also, a distinct minimum in the ignition voltage of 10 μm square devices is observed for pd≃0.9 Torr cm (p and d are the Ne gas pressure and microcavity cross-sectional dimension, respectively). Strong emission on the 2 1∑+→1 1∑+ transition of XeO in the green (∼510–560 nm) is observed in mixtures of Xe (300–700 Torr) and O2 (1–10 mTorr).
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52.75.-d Plasma devices
52.80.-s Electric discharges
78.55.Ap Elemental semiconductors
72.30.+q High-frequency effects; plasma effects

Low energy electron cooling induced by a magnetic field in high pressure capacitive radio frequency discharges

S. J. You, S. S. Kim, and H. Y. Chang

Appl. Phys. Lett. 85, 4872 (2004); http://dx.doi.org/10.1063/1.1805704 (3 pages) | Cited 10 times

Online Publication Date: 23 November 2004

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A study is conducted on a magnetic field effect on electron heating in capacitive rf discharges under a collisional regime, where the electron mean collision frequency is much higher than the rf frequency. The evolution of an electron energy distribution function (EEDF) over a magnetic field range of 0–30 G in 300 mTorr Ar discharges is measured and calculated for the investigation. A significant change in the low-energy range of the EEDF is found during the evolution. The observed result reveals the application of the magnetic field to the high-pressure capacitive plasma gives rise to a cooling effect on the low-energy electrons. This is in contrast to the low-pressure case where the magnetic field enhances the low-energy electron heating. The calculated result of the EEDF is in good agreement with the experiment.
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52.20.Fs Electron collisions
52.80.Pi High-frequency and RF discharges
52.50.Qt Plasma heating by radio-frequency fields; ICR, ICP, helicons
52.70.Ds Electric and magnetic measurements

Production of high-density capacitively coupled radio-frequency discharge plasma by high-secondary-electron-emission oxide

Yasunori Ohtsu and Hiroharu Fujita

Appl. Phys. Lett. 85, 4875 (2004); http://dx.doi.org/10.1063/1.1827353 (3 pages) | Cited 2 times

Online Publication Date: 23 November 2004

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High-density capacitively coupled radio-frequency plasma with electron density ne>1010 cm−3 was produced using MgO electrodes with a high secondary-electron-emission coefficient. It was found that in the case of MgO electrodes, both plasma density and optical emission intensity were about one order of magnitude higher than those in the case of Al electrodes.
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52.50.Qt Plasma heating by radio-frequency fields; ICR, ICP, helicons
52.80.Pi High-frequency and RF discharges
52.25.-b Plasma properties
79.20.Hx Electron impact: secondary emission
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Observation of a manganese acceptor level in ferromagnetic Ga1−xMnxN layers

I. T. Yoon, T. W. Kang, M. C. Jeong, M. H. Ham, and J. M. Myoung

Appl. Phys. Lett. 85, 4878 (2004); http://dx.doi.org/10.1063/1.1825635 (3 pages) | Cited 6 times

Online Publication Date: 23 November 2004

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We have observed the high-temperature (T=300 K) photoluminescence (PL) spectra from free to Mn-related acceptor pair transitions in Ga1−xMnxN layers (where x≈0.2%–0.6%) grown on sapphire (0001) substrates using the plasma-enhanced molecular-beam epitaxy technique. Luminescence from an Mn acceptor level in Ga1−xMnxN layer with a low Mn content was observed at around E=3.08 eV in the PL spectra. When compared to the PL from undoped GaN, the excitation, temperature-dependent PL at E=3.08 eV provides convincing evidence for a neutral Mn acceptor-bound hole character. The binding energy of the Mn acceptor-bound holes of E=330 meV is in good agreement with an ionization energy of E=402 meV obtained using effective mass theory of shallow impurity states for the hydrogen model. In addition, analysis of the PL intensities of an acceptor-bound hole in a Ga1−xMnxN layer with x≈0.6% gave an activation energy of E=310 meV, which indicates that the acceptor-bound hole with a binding energy of E=310 meV was dissociated due to thermal quenching.
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71.55.Ak Metals, semimetals, and alloys
75.50.Pp Magnetic semiconductors
78.55.Cr III-V semiconductors

Atomic diffusion in liquid Ni, NiP, PdNiP, and PdNiCuP alloys

S. Mavila Chathoth, A. Meyer, M. M. Koza, and F. Juranyi

Appl. Phys. Lett. 85, 4881 (2004); http://dx.doi.org/10.1063/1.1825617 (3 pages) | Cited 28 times

Online Publication Date: 23 November 2004

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We investigated the self-diffusion of Ni in liquid Ni, Ni80P20, Pd40Ni40P20, and Pd43Ni10Cu27P20 at temperatures up to 1795 K with incoherent, quasielastic neutron scattering. Values of measured self-diffusion coefficients vary over the accessible temperature ranges as a function of composition only within 10%. Although mixing has a drastic effect on the liquidus temperature and the undercooling capabilities, a relation between these properties and the atomic diffusion in the liquid is not observed. Apparently, diffusive motion is governed by the packing fraction of the atoms, that is very similar in these dense liquids.
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61.25.Mv Liquid metals and alloys
61.05.F- Neutron diffraction and scattering
66.30.Fq Self-diffusion in metals, semimetals, and alloys

Hydrogen sorption mechanism of oxidized nickel clusters

A. Borgschulte, R. J. Westerwaal, J. H. Rector, B. Dam, and R. Griessen

Appl. Phys. Lett. 85, 4884 (2004); http://dx.doi.org/10.1063/1.1828592 (3 pages) | Cited 9 times

Online Publication Date: 23 November 2004

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Using an optical technique to measure hydrogen sorption kinetics the catalytic activity of the NiOx clusters is determined. The thus measured temperature dependence reveals an activation energy of 0.58 eV. The catalytic activity of NiOx clusters is studied as a function of the oxygen concentration. The surface properties are analyzed by Auger-electron spectroscopy. It appears that the catalytic hydrogen sorption originates from the dissociative chemisorption of hydrogen on O:Ni, which is strongly suppressed by the presence of oxides.
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82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
68.43.Mn Adsorption kinetics
81.65.Mq Oxidation
79.20.Fv Electron impact: Auger emission

Hydrogen adsorption in mesoporous carbons

Jiebin Pang, J. Eric Hampsey, Zhiwang Wu, Qingyuan Hu, and Yunfeng Lu

Appl. Phys. Lett. 85, 4887 (2004); http://dx.doi.org/10.1063/1.1827338 (3 pages) | Cited 30 times

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The hydrogen adsorption of mesoporous carbon materials with different mesostructures, surface areas, and pore volumes has been investigated. Experimental results indicate that the hydrogen adsorption capacities are dominantly related to their surface areas. A hydrogen adsorption capacity of 1.78 wt % was obtained at 77 K and ambient pressure of 850 mm Hg (0.11 MPa) for the mesoporous carbon with a surface area of 2314 m2∕g.
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84.60.-h Direct energy conversion and storage
68.43.Mn Adsorption kinetics
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
61.43.Gt Powders, porous materials
61.46.-w Structure of nanoscale materials

Effect of growth temperature on morphology, structure and luminescence of Eu-doped GaN thin films

Q. L. Liu, Y. Bando, F. F. Xu, and C. C. Tang

Appl. Phys. Lett. 85, 4890 (2004); http://dx.doi.org/10.1063/1.1825619 (3 pages) | Cited 13 times

Online Publication Date: 23 November 2004

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The effect of growth temperature on morphology, structure, and photoluminescence (PL) of Eu-doped GaN (GaN:Eu) films grown by magnetron sputtering, and the relationships of growth-temperature-structure-PL were investigated by x-ray diffraction, scanning electron microscopy, transmission electron microscopy, and PL. The films grown at room temperature (RT), 573 K, and 773 K are composed of random crystalline grains, c-oriented GaN nanorods with lots of stacking faults, and well-crystalline c-oriented GaN, respectively. The characteristic emission lines of the Eu3+ were observed in the PL spectra at room temperature for the 573-K-grown and 773-K-grown films, while no emission line for the RT-grown film. The PL intensity from the 773-K-grown film is much stronger than that from the 573-K-grown film.
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78.55.Cr III-V semiconductors
68.55.-a Thin film structure and morphology
81.15.Cd Deposition by sputtering
78.66.Fd III-V semiconductors

Hydrogen-induced metallization of a preoxidized 3C-SiC(100)3×2 surface

M. G. Silly, C. Radtke, H. Enriquez, P. Soukiassian, S. Gardonio, P. Moras, and P. Perfetti

Appl. Phys. Lett. 85, 4893 (2004); http://dx.doi.org/10.1063/1.1827938 (3 pages) | Cited 10 times

Online Publication Date: 23 November 2004

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We investigate atomic hydrogen interaction with a preoxidized Si-rich 3C-SiC(100)3×2 surface by synchrotron radiation-based valence band, and Si 2p and C 1s core level photoemission spectroscopies. Atomic hydrogen exposure results in (i) Fermi level built-up in the valence band, (ii) band bending, and (iii) the three Si 2p surface components shifting to lower binding energies. These features indicate H-induced surface metallization. This finding opens perspectives in the metallization at the subnanometric scale of passivated semiconductor surfaces.
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81.05.Hd Other semiconductors
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
68.47.Fg Semiconductor surfaces
73.20.At Surface states, band structure, electron density of states
71.20.Nr Semiconductor compounds
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition

Sun Jin Yun, Young-Wook Ko, and Jung Wook Lim

Appl. Phys. Lett. 85, 4896 (2004); http://dx.doi.org/10.1063/1.1826238 (3 pages) | Cited 36 times

Online Publication Date: 23 November 2004

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The passivation of organic light-emitting diodes (OLEDs) with Al2O3 films containing small amounts of N (Al2O3:N) was investigated by plasma-enhanced atomic layer deposition using a direct rf plasma with a short pulse time. Luminance—voltage and current density—voltage curves of an OLED passivated with a 300 nm Al2O3:N film at 60 °C remained unchanged compared to those of nonpassivated OLED and 96% of the initial luminance were maintained even after operating for 850 h at 14 mA∕cm2. The lifetime of an OLED with an 80 °C Al2O3:N film was 650 h, 6.2 times longer than that of a nonpassivated sample, although the luminance—voltage characteristics of the OLED were altered to a considerable extent.
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85.60.Jb Light-emitting devices
81.65.Rv Passivation
68.55.A- Nucleation and growth
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Lattice location and thermal stability of implanted Fe in ZnO

E. Rita, U. Wahl, J. G. Correia, E. Alves, and J. C. Soares

Appl. Phys. Lett. 85, 4899 (2004); http://dx.doi.org/10.1063/1.1825611 (3 pages) | Cited 25 times

Online Publication Date: 23 November 2004

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The emission channeling technique was applied to evaluate the lattice location of implanted 59Fe in single-crystalline ZnO. The angular distribution of β− particles emitted by 59Fe was monitored with a position-sensitive electron detector, following 60 keV low dose (2.0×1013 cm−2) room-temperature implantation of the precursor isotope 59Mn. The emission patterns around the [0001], [1102],[1101], and [2113] directions revealed that following annealing at 800 °C, 95(8)% of the Fe atoms occupy ideal substitutional Zn sites with rms displacements of 0.06-0.09 Å.
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61.72.uj III-V and II-VI semiconductors
61.85.+p Channeling phenomena (blocking, energy loss, etc.)

Anomalous energetics and defect-assisted diffusion of Ga in silicon

Claudio Melis, Giorgia M. Lopez, and Vincenzo Fiorentini

Appl. Phys. Lett. 85, 4902 (2004); http://dx.doi.org/10.1063/1.1826230 (3 pages) | Cited 8 times

Online Publication Date: 23 November 2004

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We study via first-principles calculations the energetics and diffusion of Ga in c-Si. In contrast to B and In, the favored Ga/self-interstitial complex is the tetrahedral interstitial GaT. Thus in the presence of self-interstitials Ga becomes interstitial, and is electrically deactivated as an acceptor. Studying the native-defect assisted diffusion, we find a self-interstitial-assisted mechanism to be favored; vacancy-assisted diffusion has a sizably larger activation energy, in agreement with the observed transient enhanced diffusion behavior.
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81.05.Cy Elemental semiconductors
66.30.Dn Theory of diffusion and ionic conduction in solids
61.72.J- Point defects and defect clusters
66.30.J- Diffusion of impurities
61.72.Yx Interaction between different crystal defects; gettering effect
71.55.Cn Elemental semiconductors
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