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Applied Physics Letters / Volume 85 / Issue 21 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 85, 5031 (2004); http://dx.doi.org/10.1063/1.1823590 (3 pages)

Surface ordering of (In,Ga)As quantum dots controlled by GaAs substrate indexes

Zh. M. Wang, Sh. Seydmohamadi, J. H. Lee, and G. J. Salamo

Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701

(Received 7 June 2004; accepted 21 September 2004)

Self-organized surface ordering of (In,Ga)As quantum dots in a GaAs matrix was investigated using stacked multiple quantum dot layers prepared by molecular-beam epitaxy. While one-dimensional chain-like ordering is formed on singular and slightly misorientated GaAs(100) surfaces, we report on two-dimensional square-like ordering that appears on GaAs(n11)B, where n is 7, 5, 4, and 3. Using a technique to control surface diffusion, the different ordering patterns are found to result from the competition between anisotropic surface diffusion and anisotropic elastic matrix, a similar mechanism suggested before by Solomon [Appl. Phys. Lett. 84, 2073 (2004)].

© 2004 American Institute of Physics

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KEYWORDS and PACS

Keywords

indium compounds, gallium arsenide, III-V semiconductors, semiconductor quantum dots, semiconductor growth, surface diffusion, molecular beam epitaxial growth, surface reconstruction, surface morphology, surface topography, semiconductor epitaxial layers, atomic force microscopy

PACS

  • 81.05.Ea

    III-V semiconductors

  • 68.65.Hb

    Quantum dots (patterned in quantum wells)

  • 68.35.B-

    Structure of clean surfaces (and surface reconstruction)

  • 81.07.Ta

    Quantum dots

  • 81.15.Hi

    Molecular, atomic, ion, and chemical beam epitaxy

  • 68.35.Fx

    Diffusion; interface formation

  • 68.37.Ps

    Atomic force microscopy (AFM)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.1823590

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    H. Lee, J. A. Johnson, M. Y. He, J. S. Speck, and P. M. Petroff, Appl. Phys. Lett. 78, 105 (2001)APPLAB000084000023004681000001.

    S. C. Lee, L. R. Dawson, K. J. Malloy, and S. R. Brueck, Appl. Phys. Lett. 79, 2630 (2001)APPLAB000079000016002630000001.

    H. Heidemeyer, U. Denker, C. Muller, and O. G. Schmidt, Phys. Rev. Lett. 91, 196103 (2003).

    B. Ying, F. Liu, and M. G. Lagally, Phys. Rev. Lett. 92, 025502 (2004).

    G. S. Solomon, Appl. Phys. Lett. 84, 2073 (2004)APPLAB000084000012002073000001.

    T. Mano, R. Notzel, G. J. Hamhuis, T. J. Eijkemans, and J. H. Wolter, Appl. Phys. Lett. 81, 1705 (2002)APPLAB000081000009001705000001.

    Yu. I. Mazur, W. Q. Ma, X. Wang, Z. M. Wang, G. J. Salamo, M. Xiao, T. D. Mishima, and M. B. Johnson, Appl. Phys. Lett. 83, 987 (2003)APPLAB000083000005000987000001.

    Z. M. Wang, K. Holmes, Yu. I. Mazur, and G. J. Salamo, Appl. Phys. Lett. 84, 1931 (2004)APPLAB000084000011001931000001.

    V. Holy, G. Springholz, M. Pinczolits, and G. Bauer, Phys. Rev. Lett. 83, 356 (1999).

    Z. M. Wang, L. Daweritz, P. Schutzendube, and K. H. Ploog, Phys. Rev. B 61, R2440 (2000).

    Z. M. Wang, J. L. Shultz, and G. J. Salamo, Appl. Phys. Lett. 83, 1749 (2003)APPLAB000083000009001749000001.

    Z. M. Wang, L. Daweritz, and K. H. Ploog, Appl. Phys. Lett. 78, 712 (2001)APPLAB000078000006000712000001.

    Z. M. Wang, V. R. Yazdanpanah, J. L. Shultz, and G. J. Salamo, Appl. Phys. Lett. 81, 2965 (2002)APPLAB000081000016002965000001.


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