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22 Nov 2004

Volume 85, Issue 21, pp. 4831-5106

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Appl. Phys. Lett. 85, 4845 (2004); http://dx.doi.org/10.1063/1.1823019 (3 pages)

Wounjhang Park and Jeong-Bong Lee
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Thickness determination of very thin amorphous and microcrystalline silicon layers using reflection/transmission measurements

A. Gordijn, J. K. Rath, and R. E. I. Schropp

Appl. Phys. Lett. 85, 5096 (2004); http://dx.doi.org/10.1063/1.1825063 (3 pages) | Cited 1 time

Online Publication Date: 23 November 2004

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In thin-film silicon research, it is essential to have an accurate and fast method for the determination of the thickness and material properties of layers down to 20 nm thick. We report on the interpretation of optical measurements by spectroscopy of reflection and transmission in the range 400–1000 nm. A method is developed to fit these spectra based on the O’Leary–Johnson–Lim model and material properties obtained from thicker layers. These results are correlated with the results obtained from other techniques for accurate thickness measurements. We conclude that a reliable fit of the optical measurements is possible down to a layer thickness of 20 nm.
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68.55.-a Thin film structure and morphology
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.66.Db Elemental semiconductors and insulators
78.40.Fy Semiconductors
78.30.Am Elemental semiconductors and insulators

Relativistic laser plasma from micron-sized argon clusters as a debris-free x-ray source for pulse x-ray diffraction

Yuji Fukuda, Yutaka Akahane, Makoto Aoyama, Norihiro Inoue, Hideki Ueda, Yoshiki Nakai, Koichi Tsuji, Koichi Yamakawa, Yoichiro Hironaka, Hiroaki Kishimura, Hiroto Morishita, Ken-ichi Kondo, and Kazutaka G. Nakamura

Appl. Phys. Lett. 85, 5099 (2004); http://dx.doi.org/10.1063/1.1823589 (3 pages) | Cited 4 times

Online Publication Date: 23 November 2004

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We have demonstrated diffraction from Si(111) crystal using x rays from highly ionized Ar ions produced by laser irradiation with an intensity of 6×1018W∕cm2 and a pulse duration of 30 fs acting upon micron-sized Ar clusters. The measured total photon flux and linewidth in the Heα1 line (3.14 keV) were 4×107photons∕shot∕4πsr and 3.7 eV (full width at half maximum), respectively, which is sufficient to utilize as a debris-free light source for time-resolved x-ray diffraction studies.
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52.27.Ny Relativistic plasmas
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
61.05.cp X-ray diffraction

Measuring electro-optic coefficients of poled polymers using fiber-optic Mach–Zehnder interferometer

Yi-Ping Wang, Jian-Ping Chen, Xin-Wan Li, Jian-Xun Hong, Xiao-Hong Zhang, Jun-He Zhou, and Ai-Lun Ye

Appl. Phys. Lett. 85, 5102 (2004); http://dx.doi.org/10.1063/1.1826221 (2 pages) | Cited 7 times

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It is proposed and demonstrated that fiber-optic Mach–Zehnder interferometer measures accurately electro-optic coefficients of, not only poled polymer thin films, but also poled polymer waveguides. Furthermore, the tensor components, both r13 and r33, of electro-optic coefficient can be measured simultaneously.
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07.60.Ly Interferometers
07.60.Vg Fiber-optic instruments
42.81.Cn Fiber testing and measurement of fiber parameters
78.20.Jq Electro-optical effects
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