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22 Nov 2004

Volume 85, Issue 21, pp. 4831-5106

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Appl. Phys. Lett. 85, 4845 (2004); http://dx.doi.org/10.1063/1.1823019 (3 pages)

Wounjhang Park and Jeong-Bong Lee
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Effects of annealing temperature on electrical resistance of bonded n‐GaAs wafers

Po Chun Liu, Cheng Lun Lu, YewChung Sermon Wu, Ji-Hao Cheng, and Hao Ouyang

Appl. Phys. Lett. 85, 4831 (2004); http://dx.doi.org/10.1063/1.1823592 (3 pages) | Cited 5 times

Online Publication Date: 23 November 2004

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The electrical characteristics and microstructures of n-type (100) GaAs bonded interfaces were systematically investigated. Experimental results indicated that GaAs did not bond directly to itself, but via an amorphous oxide layer at 400 °C. When temperatures increased above 400 °C, the oxide bonded area declined and finally disappeared. Electrical resistance decreased with bonding temperature. However, the resistance increased with temperatures exceeding 850 °C.
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61.72.Cc Kinetics of defect formation and annealing
72.80.Ey III-V and II-VI semiconductors
66.30.Ny Chemical interdiffusion; diffusion barriers
72.20.Fr Low-field transport and mobility; piezoresistance
81.05.Ea III-V semiconductors
68.35.Ct Interface structure and roughness

Finite-width waveguide and waveguide intersections for self-collimated beams in photonic crystals

Zhaofeng Li, Haibo Chen, Zhitang Song, Fuhua Yang, and Songlin Feng

Appl. Phys. Lett. 85, 4834 (2004); http://dx.doi.org/10.1063/1.1828577 (3 pages) | Cited 11 times

Online Publication Date: 23 November 2004

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The effect of waveguide width on the propagation of self-collimated beams in photonic crystals is studied using the finite-difference time-domain method. It is shown that, to obtain good transmission, it would be better to keep the waveguide width above a minimum value. It is also shown that waveguide intersections based on the effect of self-collimated beams can provide high throughput and low cross talk simultaneously within a relatively wide bandwidth.
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42.70.Qs Photonic bandgap materials
42.79.Gn Optical waveguides and couplers
42.79.Ag Apertures, collimators

Phase locking in a fiber laser array with varying path lengths

Liping Liu, Yi Zhou, Fanting Kong, Y. C. Chen, and Kotik K. Lee

Appl. Phys. Lett. 85, 4837 (2004); http://dx.doi.org/10.1063/1.1826235 (3 pages) | Cited 19 times

Online Publication Date: 23 November 2004

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Phase locking has been demonstrated in fiber lasers coupled to a common resonator containing a spatial filter. The phase-locked mode is highly stable despite the phase variations in the individual elements caused by thermal and mechanical effects. The ability to maintain phase locking is attributed to a self-adjusting process, which can be found only in systems with a combination of high gain, long length, low Q, and broad gain bandwidth, all of which can be met in fiber laser arrays.
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42.55.Wd Fiber lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking

Self-pulsation and optical injection locking for multielectrode distributed feedback lasers using phase-shift-induced modes

Satoshi Nishikawa, Mitsunobu Gotoda, Tetsuya Nishimura, and Yasunori Tokuda

Appl. Phys. Lett. 85, 4840 (2004); http://dx.doi.org/10.1063/1.1828228 (2 pages) | Cited 5 times

Online Publication Date: 23 November 2004

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We present a method of lasing mode control by taking advantage of phase-shifted grating for multielectrode distributed feedback lasers. By applying this method to stabilize the dual lasing modes, we demonstrated not only self-pulsating through beating phenomena, but also optical injection locking for external signals at very high frequency regions.
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42.55.Px Semiconductor lasers; laser diodes
85.60.Bt Optoelectronic device characterization, design, and modeling

Mask pattern transferred transient grating technique for molecular-dynamics study in solutions

Koichi Okamoto, Zhaoyu Zhang, Axel Scherer, and David T. Wei

Appl. Phys. Lett. 85, 4842 (2004); http://dx.doi.org/10.1063/1.1828591 (3 pages) | Cited 6 times

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We have developed a mask pattern transferred transient grating (MPT-TG) technique by using metal grating films. Transient thermal grating is generated by an ultraviolet light pattern transfer to nitrobenzene in 2-propanol solution, and the subsequent effect is detected through its diffraction to a probe beam. The thermal diffusion coefficient is obtained by the relationship between the grating periods and the signal decay lifetime, and is well in agreement with the calculated value. This technique has many advantages, such as a simple setting, an easy alignment, accurate phase control, and high stability for molecular-dynamics study in solutions.
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42.65.Sf Dynamics of nonlinear optical systems; optical instabilities, optical chaos and complexity, and optical spatio-temporal dynamics
42.79.Dj Gratings
66.10.C- Diffusion and thermal diffusion

Mechanically tunable photonic crystal structure

Wounjhang Park and Jeong-Bong Lee

Appl. Phys. Lett. 85, 4845 (2004); http://dx.doi.org/10.1063/1.1823019 (3 pages) | Cited 51 times

Online Publication Date: 23 November 2004

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We report a tunable nanophotonic device concept based on flexible photonic crystal, which is comprised of a periodic array of high-index dielectric material and a low-index flexible polymer. Tunability is achieved by applying mechanical force with nano-/microelectromechanical system actuators. The mechanical stress induces changes in the periodicity of the photonic crystal and consequently modifies the photonic band structure. To demonstrate the concept, we theoretically investigated the effect of mechanical stress on the anomalous refraction behavior and observed a very wide tunability in the beam propagation direction. This concept provides a means to achieve real-time, dynamic control of photonic band structure and will thus expand the utility of photonic crystal structures in advanced nanophotonic systems.
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42.70.Qs Photonic bandgap materials
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
78.66.Qn Polymers; organic compounds
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
68.60.Bs Mechanical and acoustical properties

Dramatic effects of hole transport layer on the efficiency of iridium-based organic light-emitting diodes

Ying Wang

Appl. Phys. Lett. 85, 4848 (2004); http://dx.doi.org/10.1063/1.1823031 (3 pages) | Cited 18 times

Online Publication Date: 23 November 2004

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Electroluminescent efficiency of organic light-emitting diodes with Ir-based emitter depends strongly on the nature of the hole transport layer used. The efficiency is not correlated with the oxidation potential of the hole transport material. Instead, we found that many of the hole transport materials used can quench the photoluminescence intensity of the Ir green emitter and the photoluminescent quenching efficiency correlates well with the device efficiency. Based on the pulse radiolysis energy transfer experiments, we established the origin of the photoluminescent quenching as due to energy transfer from the excited state of Ir green emitter to the triplet state of the hole transport material.
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85.60.Jb Light-emitting devices
78.55.Kz Solid organic materials
78.60.Fi Electroluminescence
72.20.Fr Low-field transport and mobility; piezoresistance

1.3 μm InGaAs vertical-cavity surface-emitting lasers with mode filter for single mode operation

R. Marcks von Würtemberg, P. Sundgren, J. Berggren, M. Hammar, M. Ghisoni, E. Ödling, V. Oscarsson, and J. Malmquist

Appl. Phys. Lett. 85, 4851 (2004); http://dx.doi.org/10.1063/1.1823012 (3 pages) | Cited 9 times

Online Publication Date: 23 November 2004

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We report on the performance and analysis of 1.3 μm range InGaAs∕GaAs vertical-cavity surface-emitting lasers (VCSELs) with an integrated mode filter consisting of a patterned silicon layer on the top distributer Bragg reflector. In this way, 1 mW of single mode power is obtained from a device with a wavelength of 1265 nm and a threshold current of 2.6 mA at room temperature. An effective index model is used to extract the internal and external losses of the VCSEL structure and to predict the modal losses with and without mode filter, thereby providing a useful design tool for single mode VCSELs.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.79.Ci Filters, zone plates, and polarizers

Nanocavity in a silicon waveguide for ultrasensitive nanoparticle detection

Bradley Schmidt, Vilson Almeida, Christina Manolatou, Stefan Preble, and Michal Lipson

Appl. Phys. Lett. 85, 4854 (2004); http://dx.doi.org/10.1063/1.1819997 (3 pages) | Cited 32 times

Online Publication Date: 23 November 2004

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We demonstrate the use of a micron-size planar silicon photonic device for the detection of ultralow concentrations of metal nanoparticles. The high detection sensitivity is achieved by using a strong light confining structure that enhances the effective extinction cross section of metal nanoparticles. We demonstrate the detection of 10 nm diameter gold particles with a density of fewer than 1.25 particles per 0.04 μm2. Using such a device one could detect the presence of single metal nanoparticles specifically bound to various analytes, enabling ultrasensitive detection of analytes including DNA, RNA, proteins, and antigens.
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42.79.Gn Optical waveguides and couplers
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
61.46.-w Structure of nanoscale materials
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
87.80.-y Biophysical techniques (research methods)
42.82.Et Waveguides, couplers, and arrays

Electrical tunable Fabry–Perot interferometer using a poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene) terpolymer

Dae-Yong Jeong, Yong-Hong Ye, and Q. M. Zhang

Appl. Phys. Lett. 85, 4857 (2004); http://dx.doi.org/10.1063/1.1826225 (3 pages) | Cited 7 times

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Electrical tunable Fabry-Perot interferometers (FPIs) using a poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene) terpolymer were fabricated and characterized. Using pure strain tuning, which for the terpolymer films under mechanically clamped condition is 1.3% under 100 V/μm field, we show that a tunable range of 22.5 nm can be obtained at wavelengths near 1.5 μm. Due to the opposite sign of the field-induced strain and the refractive index change from the electro-optic effect, the FPI using a terpolymer film directly as the cavity of the etalon shows a smaller tunability (0.78% under 100 V/μm).
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07.60.Ly Interferometers
42.79.-e Optical elements, devices, and systems
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.20.Jq Electro-optical effects

Bragg gratings in silicon-on-insulator waveguides by focused ion beam milling

D. J. Moss, V. G. Ta’eed, B. J. Eggleton, D. Freeman, S. Madden, M. Samoc, B. Luther-Davies, S. Janz, and D.-X. Xu

Appl. Phys. Lett. 85, 4860 (2004); http://dx.doi.org/10.1063/1.1824182 (3 pages) | Cited 11 times

Online Publication Date: 23 November 2004

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We report Bragg grating structures fabricated by focused ion beam milling in optical waveguides, and demonstrate that they can be used as a powerful diagnostic of optical modes in very high index waveguides. We show that higher-order lossy modes, which can be present in large numbers even in single-moded silicon-on-insulator waveguides, can dramatically affect the optical transmission spectra of Bragg gratings in these waveguides, even though these modes are normally not observable. Our results not only illuminate challenges to realize practical gratings in high index waveguides, but raise the possibility of devices based on mode conversion to extremely high order modes.
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42.79.Dj Gratings
42.82.Et Waveguides, couplers, and arrays
42.82.Cr Fabrication techniques; lithography, pattern transfer
42.25.Bs Wave propagation, transmission and absorption

Supercontinuum growth in a highly nonlinear fiber with a low-coherence semiconductor laser diode

A. K. Abeeluck and C. Headley

Appl. Phys. Lett. 85, 4863 (2004); http://dx.doi.org/10.1063/1.1818332 (3 pages) | Cited 8 times

Online Publication Date: 23 November 2004

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A low-coherence, amplified, cw semiconductor laser diode is used as a pump to demonstrate supercontinuum (SC) generation in a highly nonlinear, dispersion-shifted fiber (HNLF). At a launch power of 1.6 W into the anomalous-dispersion regime of 5 km of HNLF, a SC extending from 1230 nm to greater than 1770 nm is achieved. The SC grows through the seeding effect of modulation instability that also converts the cw beam into short pulses so that subsequent spectral broadening becomes similar to pumping with pulsed laser sources. The experimental data show the manifestation of soliton self-frequency shift associated with a Stokes band as the launch power is increased. Amplification of the continuum noise with respect to the cw pump is also reported.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Wd Fiber lasers
42.81.Dp Propagation, scattering, and losses; solitons
42.65.Tg Optical solitons; nonlinear guided waves

Zero dispersion at small group velocities in photonic crystal waveguides

A. Yu. Petrov and M. Eich

Appl. Phys. Lett. 85, 4866 (2004); http://dx.doi.org/10.1063/1.1815066 (3 pages) | Cited 76 times

Online Publication Date: 23 November 2004

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Modes of photonic crystal (PC) line-defect waveguides can have small group velocity away from the Brillouin zone edge. This property can be explained by the strong interaction of the modes with the bulk PC. An anticrossing of “index guided” and “gap guided” modes should be taken into account. To control dispersion, the anticrossing point can be shifted by the change of the PC waveguide parameters. An example of a waveguide is presented with vanishing second- and third-order dispersion.
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42.79.Gn Optical waveguides and couplers
42.70.Qs Photonic bandgap materials
73.20.At Surface states, band structure, electron density of states
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
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