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22 Nov 2004

Volume 85, Issue 21, pp. 4831-5106

Issue Cover Spotlight Figure

Appl. Phys. Lett. 85, 4845 (2004); http://dx.doi.org/10.1063/1.1823019 (3 pages)

Wounjhang Park and Jeong-Bong Lee
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Observation of a manganese acceptor level in ferromagnetic Ga1−xMnxN layers

I. T. Yoon, T. W. Kang, M. C. Jeong, M. H. Ham, and J. M. Myoung

Appl. Phys. Lett. 85, 4878 (2004); http://dx.doi.org/10.1063/1.1825635 (3 pages) | Cited 6 times

Online Publication Date: 23 November 2004

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We have observed the high-temperature (T=300 K) photoluminescence (PL) spectra from free to Mn-related acceptor pair transitions in Ga1−xMnxN layers (where x≈0.2%–0.6%) grown on sapphire (0001) substrates using the plasma-enhanced molecular-beam epitaxy technique. Luminescence from an Mn acceptor level in Ga1−xMnxN layer with a low Mn content was observed at around E=3.08 eV in the PL spectra. When compared to the PL from undoped GaN, the excitation, temperature-dependent PL at E=3.08 eV provides convincing evidence for a neutral Mn acceptor-bound hole character. The binding energy of the Mn acceptor-bound holes of E=330 meV is in good agreement with an ionization energy of E=402 meV obtained using effective mass theory of shallow impurity states for the hydrogen model. In addition, analysis of the PL intensities of an acceptor-bound hole in a Ga1−xMnxN layer with x≈0.6% gave an activation energy of E=310 meV, which indicates that the acceptor-bound hole with a binding energy of E=310 meV was dissociated due to thermal quenching.
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71.55.Ak Metals, semimetals, and alloys
75.50.Pp Magnetic semiconductors
78.55.Cr III-V semiconductors

Atomic diffusion in liquid Ni, NiP, PdNiP, and PdNiCuP alloys

S. Mavila Chathoth, A. Meyer, M. M. Koza, and F. Juranyi

Appl. Phys. Lett. 85, 4881 (2004); http://dx.doi.org/10.1063/1.1825617 (3 pages) | Cited 28 times

Online Publication Date: 23 November 2004

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We investigated the self-diffusion of Ni in liquid Ni, Ni80P20, Pd40Ni40P20, and Pd43Ni10Cu27P20 at temperatures up to 1795 K with incoherent, quasielastic neutron scattering. Values of measured self-diffusion coefficients vary over the accessible temperature ranges as a function of composition only within 10%. Although mixing has a drastic effect on the liquidus temperature and the undercooling capabilities, a relation between these properties and the atomic diffusion in the liquid is not observed. Apparently, diffusive motion is governed by the packing fraction of the atoms, that is very similar in these dense liquids.
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61.25.Mv Liquid metals and alloys
61.05.F- Neutron diffraction and scattering
66.30.Fq Self-diffusion in metals, semimetals, and alloys

Hydrogen sorption mechanism of oxidized nickel clusters

A. Borgschulte, R. J. Westerwaal, J. H. Rector, B. Dam, and R. Griessen

Appl. Phys. Lett. 85, 4884 (2004); http://dx.doi.org/10.1063/1.1828592 (3 pages) | Cited 9 times

Online Publication Date: 23 November 2004

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Using an optical technique to measure hydrogen sorption kinetics the catalytic activity of the NiOx clusters is determined. The thus measured temperature dependence reveals an activation energy of 0.58 eV. The catalytic activity of NiOx clusters is studied as a function of the oxygen concentration. The surface properties are analyzed by Auger-electron spectroscopy. It appears that the catalytic hydrogen sorption originates from the dissociative chemisorption of hydrogen on O:Ni, which is strongly suppressed by the presence of oxides.
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82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
68.43.Mn Adsorption kinetics
81.65.Mq Oxidation
79.20.Fv Electron impact: Auger emission

Hydrogen adsorption in mesoporous carbons

Jiebin Pang, J. Eric Hampsey, Zhiwang Wu, Qingyuan Hu, and Yunfeng Lu

Appl. Phys. Lett. 85, 4887 (2004); http://dx.doi.org/10.1063/1.1827338 (3 pages) | Cited 29 times

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The hydrogen adsorption of mesoporous carbon materials with different mesostructures, surface areas, and pore volumes has been investigated. Experimental results indicate that the hydrogen adsorption capacities are dominantly related to their surface areas. A hydrogen adsorption capacity of 1.78 wt % was obtained at 77 K and ambient pressure of 850 mm Hg (0.11 MPa) for the mesoporous carbon with a surface area of 2314 m2∕g.
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84.60.-h Direct energy conversion and storage
68.43.Mn Adsorption kinetics
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
61.43.Gt Powders, porous materials
61.46.-w Structure of nanoscale materials

Effect of growth temperature on morphology, structure and luminescence of Eu-doped GaN thin films

Q. L. Liu, Y. Bando, F. F. Xu, and C. C. Tang

Appl. Phys. Lett. 85, 4890 (2004); http://dx.doi.org/10.1063/1.1825619 (3 pages) | Cited 13 times

Online Publication Date: 23 November 2004

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The effect of growth temperature on morphology, structure, and photoluminescence (PL) of Eu-doped GaN (GaN:Eu) films grown by magnetron sputtering, and the relationships of growth-temperature-structure-PL were investigated by x-ray diffraction, scanning electron microscopy, transmission electron microscopy, and PL. The films grown at room temperature (RT), 573 K, and 773 K are composed of random crystalline grains, c-oriented GaN nanorods with lots of stacking faults, and well-crystalline c-oriented GaN, respectively. The characteristic emission lines of the Eu3+ were observed in the PL spectra at room temperature for the 573-K-grown and 773-K-grown films, while no emission line for the RT-grown film. The PL intensity from the 773-K-grown film is much stronger than that from the 573-K-grown film.
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78.55.Cr III-V semiconductors
68.55.-a Thin film structure and morphology
81.15.Cd Deposition by sputtering
78.66.Fd III-V semiconductors

Hydrogen-induced metallization of a preoxidized 3C-SiC(100)3×2 surface

M. G. Silly, C. Radtke, H. Enriquez, P. Soukiassian, S. Gardonio, P. Moras, and P. Perfetti

Appl. Phys. Lett. 85, 4893 (2004); http://dx.doi.org/10.1063/1.1827938 (3 pages) | Cited 10 times

Online Publication Date: 23 November 2004

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We investigate atomic hydrogen interaction with a preoxidized Si-rich 3C-SiC(100)3×2 surface by synchrotron radiation-based valence band, and Si 2p and C 1s core level photoemission spectroscopies. Atomic hydrogen exposure results in (i) Fermi level built-up in the valence band, (ii) band bending, and (iii) the three Si 2p surface components shifting to lower binding energies. These features indicate H-induced surface metallization. This finding opens perspectives in the metallization at the subnanometric scale of passivated semiconductor surfaces.
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81.05.Hd Other semiconductors
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
68.47.Fg Semiconductor surfaces
73.20.At Surface states, band structure, electron density of states
71.20.Nr Semiconductor compounds
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition

Sun Jin Yun, Young-Wook Ko, and Jung Wook Lim

Appl. Phys. Lett. 85, 4896 (2004); http://dx.doi.org/10.1063/1.1826238 (3 pages) | Cited 36 times

Online Publication Date: 23 November 2004

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The passivation of organic light-emitting diodes (OLEDs) with Al2O3 films containing small amounts of N (Al2O3:N) was investigated by plasma-enhanced atomic layer deposition using a direct rf plasma with a short pulse time. Luminance—voltage and current density—voltage curves of an OLED passivated with a 300 nm Al2O3:N film at 60 °C remained unchanged compared to those of nonpassivated OLED and 96% of the initial luminance were maintained even after operating for 850 h at 14 mA∕cm2. The lifetime of an OLED with an 80 °C Al2O3:N film was 650 h, 6.2 times longer than that of a nonpassivated sample, although the luminance—voltage characteristics of the OLED were altered to a considerable extent.
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85.60.Jb Light-emitting devices
81.65.Rv Passivation
68.55.A- Nucleation and growth
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Lattice location and thermal stability of implanted Fe in ZnO

E. Rita, U. Wahl, J. G. Correia, E. Alves, and J. C. Soares

Appl. Phys. Lett. 85, 4899 (2004); http://dx.doi.org/10.1063/1.1825611 (3 pages) | Cited 24 times

Online Publication Date: 23 November 2004

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The emission channeling technique was applied to evaluate the lattice location of implanted 59Fe in single-crystalline ZnO. The angular distribution of β− particles emitted by 59Fe was monitored with a position-sensitive electron detector, following 60 keV low dose (2.0×1013 cm−2) room-temperature implantation of the precursor isotope 59Mn. The emission patterns around the [0001], [1102],[1101], and [2113] directions revealed that following annealing at 800 °C, 95(8)% of the Fe atoms occupy ideal substitutional Zn sites with rms displacements of 0.06-0.09 Å.
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61.72.uj III-V and II-VI semiconductors
61.85.+p Channeling phenomena (blocking, energy loss, etc.)

Anomalous energetics and defect-assisted diffusion of Ga in silicon

Claudio Melis, Giorgia M. Lopez, and Vincenzo Fiorentini

Appl. Phys. Lett. 85, 4902 (2004); http://dx.doi.org/10.1063/1.1826230 (3 pages) | Cited 7 times

Online Publication Date: 23 November 2004

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We study via first-principles calculations the energetics and diffusion of Ga in c-Si. In contrast to B and In, the favored Ga/self-interstitial complex is the tetrahedral interstitial GaT. Thus in the presence of self-interstitials Ga becomes interstitial, and is electrically deactivated as an acceptor. Studying the native-defect assisted diffusion, we find a self-interstitial-assisted mechanism to be favored; vacancy-assisted diffusion has a sizably larger activation energy, in agreement with the observed transient enhanced diffusion behavior.
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81.05.Cy Elemental semiconductors
66.30.Dn Theory of diffusion and ionic conduction in solids
61.72.J- Point defects and defect clusters
66.30.J- Diffusion of impurities
61.72.Yx Interaction between different crystal defects; gettering effect
71.55.Cn Elemental semiconductors

Determination of the carrier concentration in InGaAsN∕GaAs single quantum wells using Raman scattering

Patrick A. Grandt, Aureus E. Griffith, M. O. Manasreh, D. J. Friedman, S. Doğan, and D. Johnstone

Appl. Phys. Lett. 85, 4905 (2004); http://dx.doi.org/10.1063/1.1823014 (3 pages) | Cited 4 times

Online Publication Date: 23 November 2004

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Raman scattering from longitudinal optical phonon-plasmon coupled mode was observed in a series of InGaAsN∕GaAs single quantum well samples grown by metalorganic vapor phase epitaxy. The phonon-plasmon mode spectra were fitted with the dielectric constant function based on Drude model that contains contributions from both lattice vibrations and conduction electrons. The carrier concentration is calculated directly from the plasmon frequency, which is obtained from the fitting procedure. An empirical expression for the electron concentration, [n], in InGaAsN∕GaAs samples is determined as [n]≈{2.35×1016(ωm−502)}cm−3, where ωm is the peak of the upper frequency branch, L+, of the phonon-plasmon mode measured in unit of cm−1. The phonon-plasmon coupled mode was also investigated in rapid thermally annealed samples.
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78.67.De Quantum wells
78.30.Fs III-V and II-VI semiconductors
73.21.Fg Quantum wells
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Determination of composition and strain field of a III∕V quaternary quantum dot system

R. Otto, H. Kirmse, I. Häusler, W. Neumann, A. Rosenauer, D. Bimberg, and L. Müller-Kirsch

Appl. Phys. Lett. 85, 4908 (2004); http://dx.doi.org/10.1063/1.1823602 (3 pages) | Cited 4 times

Online Publication Date: 23 November 2004

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A system composed of a double layer of stacked quantum dots (QDs) of (In,Ga)As and Ga(Sb,As) was investigated by quantitative high-resolution transmission electron microscopy. The layers were grown by metalorganic chemical vapor deposition on a GaAs substrate. The strain field of the lower quantum dots determines the nucleation in the subsequent layer. Investigating this effect, the strain field as well as the composition could be measured at high resolution. Local changes of lattice distances could be quantified with a precision of 0.003 nm. The error in determining the local composition inside the InxGa1−xAs resp., GaSbyAs1−y QDs amounts to ΔxIn=0.02 and ΔySb=0.03.
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68.65.Hb Quantum dots (patterned in quantum wells)
68.35.Gy Mechanical properties; surface strains
68.37.Lp Transmission electron microscopy (TEM)

Superhigh strength and good soft-magnetic properties of (Fe,Co)–B–Si–Nb bulk glassy alloys with high glass-forming ability

Baolong Shen, Akihisa Inoue, and Chuntao Chang

Appl. Phys. Lett. 85, 4911 (2004); http://dx.doi.org/10.1063/1.1827349 (3 pages) | Cited 65 times

Online Publication Date: 23 November 2004

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See Also: RETRACTION

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Fe-based bulk ferromagnetic glassy alloys with diameters up to 5 mm were formed in [(Fe1−xCox)0.75B0.2Si0.05]96Nb4 system by the copper mold casting method. The substitution of Co for Fe caused an increase of glass-forming ability as well as an improvement of mechanical and magnetic properties. The bulk glassy alloys exhibited superhigh fracture strength of 3900–4250 MPa, Young’s modulus of 190–210 GPa, elastic strain of 0.02, and plastic strain of 0.0025. The bulk glassy alloys also exhibited good soft magnetic properties, i.e., saturation magnetization of 0.84–1.13 T, low coercive force of 1.5–2.7 A∕m, high permeability exceeding 1.2×104, and Curie temperature of 600–690 K.
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75.50.Bb Fe and its alloys
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
81.40.Jj Elasticity and anelasticity, stress-strain relations
81.40.Lm Deformation, plasticity, and creep
62.20.M- Structural failure of materials
62.20.D- Elasticity
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
62.20.F- Deformation and plasticity
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.43.Fs Glasses
61.43.Dq Amorphous semiconductors, metals, and alloys

Metastable phase formation during α2(D019) to γ(L10) transformation in as-atomized γ-TiAl alloy powders

M. Karadge and P. I. Gouma

Appl. Phys. Lett. 85, 4914 (2004); http://dx.doi.org/10.1063/1.1825065 (3 pages) | Cited 3 times

Online Publication Date: 23 November 2004

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α2(D019) to γ(L10) transformation during heating of as-atomized γ-TiAl powder was investigated by differential scanning calorimetry and x-ray diffraction. The as-atomized coarse powder particles (γ-TiAl powder: Ti–45Al–2Nb–0.7Mo–0.1W–2Cr–0.27O–0.2Si) with large amounts of retained α2 are a perfect candidate to investigate this transformation. It was observed that α2 to γ transformation is a two-step process involving the formation of a disordered face-centered-cubic γ′TiAl [with a(γ′)=c(γ)] as an intermediate phase followed by ordering.
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81.05.Bx Metals, semimetals, and alloys
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
68.60.Bs Mechanical and acoustical properties
64.70.K- Solid-solid transitions
81.70.Bt Mechanical testing, impact tests, static and dynamic loads
81.70.Pg Thermal analysis, differential thermal analysis (DTA), differential thermogravimetric analysis
81.40.Gh Other heat and thermomechanical treatments
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.Qp Friction, tribology, and hardness

Electrostatic field-induced surface instability

Danxu Du and David Srolovitz

Appl. Phys. Lett. 85, 4917 (2004); http://dx.doi.org/10.1063/1.1826233 (3 pages) | Cited 16 times

Online Publication Date: 23 November 2004

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We examine the thermodynamics and evolution of the morphology of a metal surface in the presence of a large electric field. A flat surface is unstable for all finite electric fields E with a critical wavelength proportional to E−1 or E−2 at small and large fields, respectively. The instability wavelength that grows the fastest during surface diffusion-limited evolution scales in the same manner. Such instabilities are important for scanning probe microscopies and are becoming increasingly important in microelectromechanical systems applications as device dimensions are reduced.
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77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Fx Diffusion; interface formation
68.37.-d Microscopy of surfaces, interfaces, and thin films
68.35.Md Surface thermodynamics, surface energies

Control of the growth orientation and electrical properties of polycrystalline Cu2O thin films by group-IV elements doping

Shogo Ishizuka and Katsuhiro Akimoto

Appl. Phys. Lett. 85, 4920 (2004); http://dx.doi.org/10.1063/1.1827352 (3 pages) | Cited 4 times

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The effects of group-IV element dopants on the structural and electrical properties of Cu2O thin films were studied. Similar dopant-induced behavior was found in the observed variations of the growth orientation and electrical properties of Si- and Ge-doped Cu2O thin films. Ge doping was found to induce electrically active acceptors with an activation energy of 0.18 eV, comparable to the 0.19 eV value of Si-doped Cu2O. These results suggest that locally formed silicate and germanate have the same effect on the structural and electrical properties of Cu2O. On the other hand, Sn and Pb likely act as donors when incorporated substitutionally onto Cu-lattice sites, although further study may be required to suppress self-compensation effects in Cu2O to achieve n-type conductivity.
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68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.S- Impurities in crystals
73.61.Le Other inorganic semiconductors
72.20.Fr Low-field transport and mobility; piezoresistance
78.30.Hv Other nonmetallic inorganics
81.15.Cd Deposition by sputtering

The generation of misfit dislocations in facet-controlled growth of AlGaN∕GaN films

D. Cherns, S.-L. Sahonta, R. Liu, F. A. Ponce, H. Amano, and I. Akasaki

Appl. Phys. Lett. 85, 4923 (2004); http://dx.doi.org/10.1063/1.1825051 (3 pages) | Cited 4 times

Online Publication Date: 23 November 2004

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The relaxation of tensile stresses in AlGaN layers grown on GaN∕(0001)sapphire by facet-controlled epitaxial lateral overgrowth is reported. It is shown that a-type misfit dislocations are introduced at inclined {11math2} AlGaN∕GaN interfaces, with strong evidence for a half-loop nucleation and glide mechanism driven by shear stresses present on the (0001) slip plane. In addition to relieving misfit stresses, these dislocations introduce grain rotations of up to 10−2 rad across the AlGaN∕GaN boundaries, leading to tilt boundaries at the meeting front between laterally growing wings and between regions growing in the lateral and [0001] directions. The effects of these processes on the defect density in subsequent layers are examined.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
68.35.Ct Interface structure and roughness
61.72.Lk Linear defects: dislocations, disclinations
68.60.Bs Mechanical and acoustical properties
61.72.Mm Grain and twin boundaries
81.40.Jj Elasticity and anelasticity, stress-strain relations
68.37.Lp Transmission electron microscopy (TEM)
68.55.-a Thin film structure and morphology

Structure of pentacene thin films

Ricardo Ruiz, Alex C. Mayer, George G. Malliaras, Bert Nickel, Giacinto Scoles, Alexander Kazimirov, Hyunjung Kim, Randall L. Headrick, and Zahirul Islam

Appl. Phys. Lett. 85, 4926 (2004); http://dx.doi.org/10.1063/1.1826229 (3 pages) | Cited 80 times

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Grazing incidence x-ray diffraction, x-ray reflectivity and atomic force microscopy have been performed to study the structure of pentacene thin films on oxidized Si substrates from submonolayer to multilayer coverages. The volume of the unit cell in the thin film phase is almost identical to that of the bulk phase, thus the molecular packing efficiency is effectively the same in both phases. The structure forming from the first monolayer remains the same for films at least 190 math thick. The in-plane structure of the submonolayer islands also remains unchanged within a substrate temperature range of 0<Tsub<45 °C while the island size changes by more than a factor of 4.
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68.55.-a Thin film structure and morphology
68.65.Ac Multilayers
68.35.B- Structure of clean surfaces (and surface reconstruction)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.66.Qn Polymers; organic compounds
78.66.Li Other semiconductors
68.37.Ps Atomic force microscopy (AFM)

Structural properties and bandgap bowing of ZnO1−xSx thin films deposited by reactive sputtering

B. K. Meyer, A. Polity, B. Farangis, Y. He, D. Hasselkamp, Th. Krämer, and C. Wang

Appl. Phys. Lett. 85, 4929 (2004); http://dx.doi.org/10.1063/1.1825053 (3 pages) | Cited 33 times

Online Publication Date: 23 November 2004

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A series of ZnO1−xSx films with 0⩽x⩽1.0 was deposited by radio-frequency reactive sputtering on different substrates. The structural characterization by x-ray diffraction measurements revealed that the films have wurtzite symmetry and correlated investigations of the layer composition by photoelectron spectroscopy showed that the lattice constant varies linearly with x. The composition dependence of the band gap energy in the ternary system was determined by optical transmission and the optical bowing parameter was found to be about 3 eV.
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81.05.Dz II-VI semiconductors
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
81.15.Cd Deposition by sputtering
71.20.Nr Semiconductor compounds
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
79.60.Bm Clean metal, semiconductor, and insulator surfaces
79.60.Dp Adsorbed layers and thin films
78.66.Hf II-VI semiconductors

Strain hardening and large tensile elongation in ultrahigh-strength nano-twinned copper

E. Ma, Y. M. Wang, Q. H. Lu, M. L. Sui, L. Lu, and K. Lu

Appl. Phys. Lett. 85, 4932 (2004); http://dx.doi.org/10.1063/1.1814431 (3 pages) | Cited 95 times

Online Publication Date: 23 November 2004

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Show Abstract
A high density of growth twins in pure Cu imparts high yield strength while preserving the capacity for efficient dislocation storage, leading to high strain hardening rates at high flow stresses, especially at 77 K. Uniform tensile deformation is stabilized to large plastic strains, resulting in an ultrahigh tensile strength of ∼1 GPa together with an elongation to failure of ∼30%.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.46.-w Structure of nanoscale materials
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.Mm Grain and twin boundaries

Interaction between interstitials and arsenic-vacancy complexes in crystalline silicon

Scott A. Harrison, Thomas F. Edgar, and Gyeong S. Hwang

Appl. Phys. Lett. 85, 4935 (2004); http://dx.doi.org/10.1063/1.1825616 (3 pages) | Cited 11 times

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Show Abstract
Using density functional theory calculations, we have examined the interaction of interstitials with various arsenic-vacancy complexes and compared these events to interstitial-vacancy (I-V) interactions. We find that the vacancy of AsmV (m=1–4) and AsmV2 (m=2,3) complexes is easily annihilated by I-V recombination, with barriers of 0–0.08 eV and 0.16–0.21 eV, respectively, for the mono- and the di-vacancy associated complexes. The energy gain from the I-V recombination turns out to be significant (>1.3 eV), implying that As would remain more favorably as Asn (or AsmIn) complexes, rather than as AsmVn in the presence of a large amount of excess interstitials. This suggests that interstitials may play an important role in As transient enhanced diffusion and agglomeration, especially at the early stage of postimplantation thermal annealing. We present the reaction paths and bonding mechanisms for the vacancy annihilation of Vn and AsmVn clusters by I-V recombination.
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71.55.Cn Elemental semiconductors
61.72.J- Point defects and defect clusters
66.30.J- Diffusion of impurities
61.72.S- Impurities in crystals
61.72.Yx Interaction between different crystal defects; gettering effect
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