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Applied Physics Letters / Volume 85 / Issue 23 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 85, 5553 (2004); http://dx.doi.org/10.1063/1.1833559 (3 pages)

Near-infrared intersubband transitions in delta-doped InAs∕AlSb multi-quantum wells

S. Sasa1, Y. Nakajima1, M. Nakai1, M. Inoue1, D. C. Larrabee2, and J. Kono2

1New Materials Research Center, Osaka Institute of Technology, 5-16-1 Ohmiya Asahi-ku, Osaka 535-8585, Japan
2Department of Electrical and Computer Engineering, Rice Quantum Institute, and Center for Nanoscale Science and Technology, Rice University, Houston, Texas 77005

(Received 26 August 2004; accepted 16 October 2004)

Intersubband transitions (ISBTs) in narrow InAs∕AlSb multiple quantum wells (MQWs) were investigated for well widths, d, ranging from 5 nm down to 1.8 nm with 10, 20, or 60 periods. In order to observe a strong ISBT signal, a heavy silicon doping was made in each InAs quantum well. Delta doping was employed for the narrowest wells to prevent silicon incorporation into the AlSb barrier layers. As the well width decreased, the ISBT signal of the MQWs decreased. However, it persisted down to d=2.1 nm with a sheet doping density in each quantum well of 9×1012 cm−2 and 60 periods. The ISBT signal observed for d=2.1 nm was peaked at an energy of 650 and 670 meV at 300 and 77 K, respectively. These are the highest energy values ever observed for ISBTs in InAs∕AlSb MQWs.

© 2004 American Institute of Physics

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KEYWORDS and PACS

Keywords

silicon, indium compounds, aluminium compounds, III-V semiconductors, semiconductor quantum wells, heavily doped semiconductors, semiconductor doping, electron mobility, impurity distribution, electron density, absorption coefficients, infrared spectra

PACS

  • 78.67.De

    Quantum wells

  • 73.63.Hs

    Quantum wells

  • 78.30.Fs

    III-V and II-VI semiconductors

  • 61.72.uj

    III-V and II-VI semiconductors

  • 72.20.Fr

    Low-field transport and mobility; piezoresistance

  • 61.72.S-

    Impurities in crystals

  • 78.20.Ci

    Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.1833559

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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